小型短电磁脉冲传感器

对一种短偶极子类小型短电磁脉冲传感器进行了研究,分析了传感器电容、有效面积与结构参数之间的解析关系,给出了传感器的工作原理。根据应用需求设计了不同带宽的该类传感器,并对其波形保真性和有效面积进行了数值分析,仿真结果表明:经传感器接收并还原所得场波形与激励电场波形几乎完全重合,传感器有效面积与理论分析结果偏差小于1%。对传感器的焊接、定位和对轴等制作工艺进行了研究,完成了传感器样品的制作。利用单锥TEM室对传感器的波形保真性和有效面积进行了实验测试,测试结果表明:设计制作的传感器样品可以很好地恢复待测脉冲电场的波形和幅度,两支传感器样品的有效面积实测结果与解析计算结果较为一致,偏差分别小于4%和7%。     

二元决策图和故障树相融合的无线传感器网络可靠性分析

为了提高无线传感器分析网络可靠性,提出一种基于二元决策图和故障树相融合的无线传感器网络可靠分析方法;首先根据无线传感器网络拓扑结构建立了故障树模型,然后将无线传感器网络故障树转化为二元决策图结构,最后采用仿真实验分析了不同节点冗余度、不同跳数条件下无线传感器网络的可靠性;仿真结果表明,文章方法的分析结果可以帮助无线传感器网络性能的优化,可以提高无线传感器网络的可靠性。     

基于圆弧摆线铰链的双光纤光栅加速度传感器

针对桥梁加速度传感器原位校准时标准传感器的选取问题,提出了一种基于圆弧摆线铰链的双光纤光栅加速度传感器。通过力学模型分析传感器谐振频率与灵敏度,根据桥梁原位校准要求对传感器结构进行参数优化,并进行静应力分析、模态分析和谐响应分析,最后制作传感器实物并进行标定。实验结果表明：传感器谐振频率为460 Hz,灵敏度约为43 pm/g,横向干扰能力程度5.7%,可用于桥梁上加速度监测。     

提高激光传感器用于现场校准装置精度的研究

阐述了激光传感器在位移传感器现场校准装置中的应用,对激光传感器的测量原理及校准方法进行了分析。结合现场校准的特殊性,分析现场校准过程中的误差来源,提高现场校准的精度。应用2m比长仪对激光传感器进行溯源,研究激光传感器在大长度测量应用中提高精度的方法,采用曲线拟合的方法对测量结果进行补偿。最后应用空气弹簧隔振平台的高度监控系统对溯源后的激光传感器进行验证。实验结果表明,应用激光传感器的位移传感器现场校准装置,其精度可以达到0.1%。     

用于自适应光学系统的波面传感器

本文给出了用于自适应光学系统的波面传感器的功能、要求及特性。详细分类叙述了几种典型的波面传感器。它们是:高频振动波面传感器,相位共轭波面传感器,旋转光栅剪切干涉波面传感器及S-H波面传感器。同时分析、比较了各类传感器的优缺点及适用范围。     

低频高灵敏度光纤Bragg光栅振动传感器设计

为实现对低频振动信号的准确测量,设计了一种新型的双光纤光栅振动传感器.首先,理论分析了传感器的灵敏度和谐振频率.其次,使用ANSYS数值模拟软件分析了传感器的灵敏度和谐振特性.最后,根据分析结果设计了光纤Brgg光栅振动传感器,并通过实验研究了传感器的幅频特性、线性响应、温度自补偿特性和抗横向干扰特性.实验结果表明:传感器在10~130Hz范围内加速度灵敏度为231.48pm/g,线性度为99.98%;-20~60℃范围内,具有良好的温度自补偿能力;同时,该传感器具有较强抗横向干扰能力,横向引入误差小于3.47%.     

偏置模式波前传感器光强信息提取及输出信号对比分析

 在小像差近似下,对偏置模式波前传感器进行了理论分析,明确了该传感器的适用条件,对比分析了3种信息提取方式和3种传感器信号输出方式的优劣。针对Zernike像差模式,数值模拟研究了传感器对单阶和多阶模式的响应特性。结果表明,畸变波前中与偏置模式相同或相关的模式之间有响应,但传感器对各阶Zernike模式的响应灵敏度不同,而且不相关模式的存在对传感器输出信号和灵敏度均有影响。     

镀银空芯光纤表面等离子体共振传感器的研究

提出了一种新型的基于镀银空芯光纤结构的表面等离子体共振(SPR)传感器。建立了光学模型对传感器内的光传播进行分析,在理论上推导出了传输光谱公式。制作了不同银膜厚度的空芯光纤SPR传感器,搭建了实验系统对内芯充入不同折射率的液体介质的传感器传输光谱进行了测量,获得了相应的SPR光谱。通过理论计算和实验测量对传感器的灵敏度特性和测量准确性进行了分析讨论。结果表明该传感器是一种灵敏度较高的、能实时检测待测高折射率液体介质的SPR传感器,它在一定范围内能够很好地弥补传统光纤表面等离子体共振传感器的不足,并且开拓了空芯光纤的一个新的应用领域。     

基于偏芯结构的光纤传感器的振动传感特性研究

提出了一种基于偏芯熔接结构的光纤振动传感器,该传感器具有较好的梳状滤波特性和较高的消光比。通过对该结构的传感器的弯曲响应特性进行分析,实验结果表明该传感器对弯曲变化表现出了近似线性响应的特性。在此基础上进一步研究了传感器的振动响应特性,对传感器工作在线性响应区域和非线性响应区域的振动响应特性进行了分析和对比。实验结果表明,该传感器在线性工作区域表现出了极好的振动响应特性,其振动响应谱线与马赫曾德尔型光纤干涉仪相类似。此外,该传感器在无振动情况下的噪声极低,具有较好的实际应用价值。     

微热板的热测试和热分析

随着近代高新技术的发展,要求各种探测器微型化。微加工技术的进步,使得微器件制造有了可能,于是微传感器就应运而生了。微热板作为一种微型加热器在微传感器中有着极为重要的作用。它的温度分布和热特性直接影响微传感器的工作性能,为此微热板的热测试和热分析成为微传感器的研制、使用和评价所必不可少的工作。 本文件对研制中的气体传感器的微热板,用红外热成像技术进行热测试和分析,获得气体传感器微热板的微小区域的温度分布,为传感器的研制提供了可靠的依据。     

Experimental mode coupling analysis in optical waveguides for sensor and component optimization

A computer controlled mode coupling analyser is conceived and described in detail to characterize and to analyse mode coupling in all known kinds of cylindrical, multimode, step index, optical waveguides (CMSIOWs) by experimental measurement. These waveguides can be present in many ways like simple fibres, multimode fibre-optic sensors (MFOS) or other optical components like couplers or modulators. The computer processed results of measurements lead to transfer matrices and modulation transfer matrices. The transfer matrices describe the light distribution in the far field of these waveguides depending on the direction and power of the light that is injected into it. By visualizing the modulation transfer matrices in the form of mesh diagrams, the influence of external physical parameters, like a measured variable, on the mode coupling mechanisms inside CMSIOWs can be shown directly. The computer controlled mode coupling analyser will make the optimization of MFOS more efficient and, moreover, it will ease modelling of CMSIOWs and define their properties. The potential field of applications for the mode coupling analyser will be in engineering and optimization of intrinsic multimode fibre-optic sensors and their components.     

Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal–ferroelectric–nitride–oxide–semiconductor structure

Preferentially (105)-oriented Sr_xBi_2+yTa₂O₉ (SBT) thin films on SiN/SiO₂/p-Si(100) prepared by the pulsed laser deposition (PLD) method at a temperature as low as 400 °C, which is the lowest process temperature for growing SBT ferroelectric thin films on a silicon nitride film. Excess Bi promotes crystallization of the SBT film. A metal-ferroelectric-nitride-oxide-semiconductor (MFNOS) structure, which is very important in ferroelectric gate memory FET, has been fabricated by depositing the SBT film on silicon nitride-oxide-silicon. The MFNOS structures show capacitance-voltage (C-V) hysteresis corresponding to ferroelectric hysteresis. A memory window of the C-V hysteresis is improved, to be as high as 3.5 V in the SBT(400 nm)/SiN_x(7 nm)/SiO₂(18 nm)/Si compared with the window of 2.7 V in the SBT(400 nm)/SiO₂(27 nm)/Si (MFOS), where the thicknesses of their insulator layers are nearly the same. Little degradation is induced in the C-V characteristics of the SiN_x/SiO₂/p-Si structure when depositing the SBT film by PLD at low temperature. It is also found that the SiN_x layer acts as a diffusion barrier against component atoms in the SBT film during its deposition. Finally, the MFNOS structure prepared at the low temperature is very promising for a next-generation ferroelectric gate memory FET.     

Optical time-domain reflectometry for distributed sensing of the structural strain and deformation

A unique structure of microbend optical fiber sensor (MOFS) for measuring tensile and compressive strain is described in this paper. The average measuring sensitivity for tensile strain is 35μ using 3 MOFS arrays. The repeatability and stability of MFOS are better than 18μ. The loss sensitivity of single-mode (SM) fiber and multi-mode (MM) fiber used in MOFS, as well as the relationship between the pulse width of diode laser and loss sensitivity are also studied in this paper. From these studies, some conclusions have been obtained. They are (1) the loss sensitivity and repeatability of SM fiber are better when compared to MM fiber in MOFS, and (2) the variation of pulse width of laser would only influent the signal-to-noise ratio and dynamic range, but has no contribution to loss sensitivity. Experimental results also show that loss of SM fiber highly depends on the wavelength of laser, but MM fiber has no such property. The loss of SM fiber between the wavelength of 1550 and 1310 nm is about the ratio of 6.5. Therefore, the experiments reported in this paper used a wavelength of 1310 nm to measure tensile strain and 1550 nm to measure compressive strain based on the above property of SM fiber, without changing the configuration of MOFS.     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究

为了优化InGaN太阳能电池结构并有效地指导实际电池的制备,研究了n-i-p(p层在下)In组分梯度渐变结构的InGaN太阳能电池的性能特征。通过APSYS软件模拟计算,对比采用p-i-n渐变结构(p层在上)和n-i-p渐变结构(p层在下)的InGaN太阳能电池的器件性能。结果表明,采用n-i-p渐变结构的InGaN电池,i-InGaN层在低In组分下没有明显的优势,而在高In组分下的器件性能较好。在In组分为0.62时,转换效率最高达到8.48%。分析表明,p层在下的n-i-p渐变结构使得InGaN电池的极化电场与耗尽区的内建电场方向一致,有利于载流子的输运。采用n-i-p渐变结构有利于制备高性能的InGaN太阳能电池。     

Design study of a L-band photocathode RF injector

In the proposal of the Beijing Advanced Light Source, a compact combination of XERL and XFEL using a common SC linac is being considered. In the meantime, an ERL-FEL test facility is being proposed and will be used for THz radiation. In this test facility, a L-band photocathode RF injector is needed. In this paper, we give the physical design of the L-band photocathode RF injector for the test facility.     

Is the percolation transition of hard spheres a thermodynamic phase transition?

In hard-sphere systems, there is a fluid-solid transition, but no gas-liquid transition. In the fluid region, however, one can find a purely geometric percolation transition, which is studied in detail. The van der Waals model of hard spheres is treated. In this model, a uniform negative background potential is added. This modification does not change the structure, but induces a gas-liquid transition. In fact, percolation and the gas-liquid transition can be related to each other.     

Design study of a L-band photocathode RF injector

In the proposal of the Beijing Advanced Light Source, a compact combination of XERL and XFEL using a common SC linac is being considered. In the meantime, an ERL-FEL test facility is being proposed and will be used for THz radiation. In this test facility, a L-band photocathode RF injector is needed. In this paper, we give the physical design of the L-band photocathode RF injector for the test facility.     

Lagrangian for the t–J Model Constructed from the Generators of the Supersymmetric Hubbard Algebra

In order to describe the dynamics of the t–J model, two different families of first-order Lagrangians in terms of the generators of the Hubbard algebra are found. Such families correspond to different dynamical second-class constrained systems. The quantization is carried out by using the path-integral formalism. In this context the introduction of proper ghost fields is needed to render the model renormalizable. In each case the standard Feynman diagrammatics is obtained and the renormalized physical quantities are computed and analyzed. In the first case a nonperturbative large-N expansion is considered with the purpose of studying the generalized Hubbard model describing N-fold-degenerate correlated bands. In this case the 1/N correction to the renormalized boson propagator is computed. In the second case the perturbative Lagrangian formalism is developed and it is shown how propagators and vertices can be renormalized to each order. In particular, the renormalized ferromagnetic magnon propagator coming from our formalism is studied in details. As an example the thermal softening of the magnon frequency is computed. The antiferromagnetic case is also analyzed, and the results are confronted with previous one obtained by means of the spin-polaron theories.     

InGaAsSb/GaSb量子阱能带结构及自发发射谱

讨论了不同In组分对InGaAsSb/GaSb量子阱能带结构,即带隙及带边不连续性(带阶)的影响。给出了较为精准的InGaAsSb禁带宽度与In组分的关系。分析了In组分对InGaAsSb/GaSb导带、价带带阶的作用。研究表明,随In组分的增加,InGaAsSb禁带宽度减小,应力加大,能带漂移增大,InGaAsSb/GaSb导带、价带的带阶减小。同时,利用上述研究结果合理地解释了InGaAsSb/GaSb自发发射谱的增益、发射峰位及半峰宽与In组分关系。研究In组分对InGaAsSb/GaSb量子阱能带结构及自发发射谱的影响,可以定性地解释已有的实验报道。