High-Temperature Dielectric Response and Multiscale Mechanism of SiO2/Si3N4 Nanocomposites

The high-temperature dielectric properties of SiO₂/Si₃N₄ nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0GHz are measured by the resonant cavity method. The SiO_2/Si₃N₄ nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO₂/Si₃N₄ on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

Optical activation of patterned Si nanowires grown from sol-gel prepared gold/Er-doped aluminous film

Optical activation of patterned Si nanowires grown from sol-gel prepared gold/Er-doped aluminous film is investigated. The growth of patterned Si nanowires (SiNWs), the doping of Er ions and the sintered process are completed by one step. Si nanowires were grown from a sol-gel solution containing both Au catalysts and Er ions by the vapor-liquid-solid method. Such Er-activated Si nanowires achieve both high carrier-mediated excitation efficiency and high Er luminescence efficiency while at the same time providing high areal density of Er and easy current injection, indicating the possibility of activated patterned Si nanowires grown from sol-gel film as a material platform for Si-based photonics.     

Nanoparticle-Coated Silicon Nanowires

The synthesis of silicon nanowires that are densely coated with silicon nanoparticles is reported. These structures were produced in a two-step process, using a method known as hypersonic plasma particle deposition. In the first step, a Ti–Si nanoparticle film was deposited. In the second step the Ti-source was switched off, and nanoparticle-coated nanowires grew under the simultaneous action of Si vapor deposition and bombardment by Si nanoparticles. Total process time, including both steps, equaled 5 min, and resulted in formation of a dense network of randomly oriented nanowires covering1.5 cm² of substrate area. The nanowires are composed of single-crystal Si. The diameters of the nanowires vary over the range 100–800 nm. Each nanowire has a crystalline TiSi₂ catalyst particle, believed to have been solid during nanowire growth, at its tip.     

LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

We investigated the structural properties of LaNiO₃ thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO₃ thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb_0.4Zr_0.6)TiO₃ thin film was successfully grown on such a LaNiO₃/Si(001) substrate at a substrate temperature of 350 °C by using the same pulsed laser deposition. Our results show that the LaNiO₃ film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb_0.4Zr_0.6)TiO₃ thin film on Si substrates.     

Impurity doping in silicon nanowires synthesized by laser ablation

Boron (B) or phosphorus (P) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B were observed in B-doped SiNWs by micro-Raman scattering measurements at room temperature. Fano broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak for B-doped SiNWs. An electron spin resonance signal due to conduction electrons was observed only for P-doped SiNWs. These results prove that B and P atoms were doped in substitutional sites of the crystalline Si core of SiNWs during laser ablation and electrically activated in the sites.     

Fabrication and characterization of CuO-core/TiO2-shell one-dimensional nanostructures

We have fabricated CuO-core/TiO₂-shell one-dimensional nanostructures by coating the CuO nanowires with MOCVD-TiO₂. The structure of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction analysis techniques. The CuO-cores and the TiO₂-shells of the as-synthesized nanowires have been found to have crystalline monoclinic CuO and crystalline tetragonal anatase TiO₂ structures, respectively. The CuO-core/TiO₂-shell nanowires are winding and has rougher surface, whereas the CuO nanowires are straight and have smoother surface.Influence of the substrate temperature and the growth time on the structure such as the morphology, size, and crystallographic orientation of CuO nanowires synthesized by thermal oxidation of Cu foils have also been investigated. All the nanowires have only the CuO phase synthesized at 600 °C, whereas those synthesized at 400 °C have both CuO and Cu₂O phases. The highest density of CuO nanowires with long thin straight morphologies can be obtained at 600 °C. In addition, the growth mechanism of the CuO nanowires has been discussed.     

Superconductivity in Hole-Doped （S1-xKx）Fe2As2

A series of layered （Sr1-xKx）Fe2As2 compounds with nominal x = 0-0.40 are synthesized by solid state reaction method. Similar to other parent compounds of iron-based pnictide superconductors, pure SrFe2As2 shows a strong resistivity anomaly near 210 K, which was ascribed to the spin-density-wave instability. The anomaly temperature is much higher than those observed in LaOFeAs and BaFe2As2, the two prototype parent compounds with ZrCuSiAs- and ThCr2Si2-type structures. K-doping strongly suppresses this anomaly and induces superconductivity. Like in the case of K-doped BaFe2As2, sharp superconducting transitions at Tc ～ 38 K is observed. We perform the Hall coefficient measurement, and confirm that the dominant carriers are hole-type. The carrier density is enhanced by a factor of 3 in comparison to F-doped LaOFeAs superconductor.     

Fabrication and Characterization of SmCo5/Fe65Co35 and SmCo5/Fe Composite Spring Exchange Magnets

SmCo5/Fe65Co35 and SmCo5/Fe spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates and 100-nm-thick Si3N4 membranes, respectively. The base pressure of sputtering chamber is kept below 10^-7 Tort, and Ar pressure is 3 to 8mTorr. The samples are characterized by an x-ray diffractometer, a superconducting quantum interference magnetometer, and high resolution magnetic soft x-ray microscopy. We obtain the complete exchange coupling and single phase behaviour of composite magnets. The （BH）max value achieved is 28.8 MGOe.     

Si3N4/Si表面Si生长过程的扫描隧道显微镜研究

利用原位扫描隧道显微镜和低能电子衍射分析了Si的纳米颗粒在Si₃N₄/Si(111)和Si₃N₄/Si(100)表面生长过程的结构演变.在生长早期T为350—1075K范围内,Si在两种衬底表面上都形成高密度的三维纳米团簇,这些团簇的大小均在几个纳米范围内,并且在高温退火时保持相当稳定的形状而不相互融合.当生长继续时,Si的晶体小面开始显现.在晶态的Si₃N₄(0001)/S 关键词： 氮化硅 扫描隧道显微镜 纳米颗粒     

Catalyst-free synthesis of GeO2 nanowires using the thermal heating of Ge powders

Germanium dioxide (GeO₂) nanowires have been synthesized by means of the simple evaporation of solid Ge powders, without using metal catalysts. The nanowires, with a diameter of about 90–200 nm, were characterized using scanning electron microscopy (SEM), X-ray diffractometry (XRD), and transmission electron microscopy (TEM). The obtained GeO₂ nanowires were crystalline with a hexagonal structure. The growth mechanism was discussed with respect to the vapor–solid process. The photoluminescence measurement revealed two emission peaks at about 2.45 eV and 2.91 eV at room temperature, opening up a route to potential applications in future optoelectronic nanodevices. Raman measurement of as-synthesized GeO₂ nanowires was made at room temperature.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

氧化硅（Si3N4）—稀土氧化物陶瓷的超高压烧结研究

 在5~7 GPa，600~1 800 ℃的压力-温度范围内对组份为氧化硅-稀土氧化物微粉混合物（3α-Si₃N₄+0.5La₂O₃+0.5Pr₆O₁₁（mol.%））的烧结产物进行了研究。所得结果表明其成相规律与Sialon体系在高温高压下烧结时不同。在直到5 GPa的高压下，α-Si₃N₄表现出相当高的稳定性，并不转变成β相。当烧结温度低于1 600 ℃时，烧结体仍然由以α-Si₃N₄为基础的固溶体及稀土氧化物组成，而后者则表现出一系列相变化。当压力超过6 GPa、温度高于1 600 ℃时，物料烧结成一个新的单相高压结构ReSi₃O₂N₄。其衍射数据可以用一个正交点阵来拟合。其晶格参数为：a=1.298 3 nm，b=0.814 0 nm，c=0.428 5 nm。     

Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail.     

Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering

SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg＇s work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter the target-poisoning mode when the preset gas flow （N2 in this work） is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to I and N2 supply fixed at I sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.     

Structural study of the Lu2Si2O7-Sc2Si2O7 system

Different compositions in the Lu₂Si₂O₇-Sc₂Si₂O₇ system have been synthesized following the ceramic method. All XRD patterns are compatible with the thortveitite structure (β-RE₂Si₂O₇ polymorph). Unit cell parameters change linearly with composition, which indicates a complete solid solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇. ²⁹Si MAS NMR spectra show a decrease of the ²⁹Si chemical shift with increasing Sc content. A correlation reported in the literature to predict ²⁹Si chemical shifts in silicates is applied here to obtain the theoretical variation in ²⁹Si chemical shift values in the system Lu₂Si₂O₇-Sc₂Si₂O₇ and the results compare favourably with the values obtained experimentally. The FWHM values of the ²⁹Si MAS NMR curves indicate a random distribution of Lu and Sc in the structure of the intermediate members. Finally, the IR study of the system confirms the solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇, showing the splitting of several modes in the intermediate members and a linear shift of the frequency on going from one end-member to the other.     

Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

A multilayered Si nanocrystal-doped SiO₂/Si (or Si-nc:SiO₂/Si) sample structure is studied to acquire strong photoluminescence (PL) emission of Si via modulating excess Si concentration. The Si-nc:SiO₂ results from SiO thin film after thermal annealing. The total thickness of SiO layer remains 150 nm, and is partitioned equally into a number of sublayers (N = 3, 5, 10, or 30) by Si interlayers. For each N-layered sample, a maximal PL intensity of Si can be obtained via optimizing the thickness of Si interlayer (or d_Si). This maximal PL intensity varies with N, but the ratio of Si to O is nearly a constant. The brightest sample is found to be that of N = 10 and d_Si = 1 nm, whose PL intensity is ∼5 times that of N = 1 without additional Si doping, and ∼2.5 times that of Si-nc:SiO₂ prepared by co-evaporating of SiO and Si at the same optimized ratio of Si to O. Discussions are made based on PL, TEM, EDX and reflectance measurements.     

Chemical Synthesis of C3N and BC2N Compounds

A chemical reaction for the preparation of B-C-N compounds by using carbon tetrachloride （CC14）, boron tribromide （BBr3）, lithium nitride （Li3N） and sodium as reactants has been carried out at the temperature of 400℃. Measurements of FTIR, XRD, TEM and EELS show that two kinds of compounds have been formed in the prepared sample. One is hollow sphere-like C-N with an amorphous, structure; the other is piece-like polycrystalline B-C-N with the hexagonal structure. Their determined compositions are close to C3N and BC2N, respectively.     

落管中Pd77.5Au6Si16.5合金的固化动力学亚稳相的形成

研究了落管中Pd_77.5Au₆Si_16.5合金的过冷、生核及亚稳相的形成。在小于400μm的金属小球中发现Pd的固溶体相;在较大的金属小球中则观察到Pd₃Si金属间化合物相。本文还在经典生核理论的基础上,计算了不同相的固液自由能差、成核功、生核速率及晶体生长速度随温度的变化关系,并由此得到时间-温度-转变曲线(t-T-t),计算与实验结果较为一致。 关键词：