TbDyFe薄膜对三明治膜巨磁阻抗效应的影响

将600℃退火后的超磁致伸缩材料(Tb0.27Dy_0.73)_0.3Fe_0.7薄膜作为Ni_80.2Fe_14.1Si_0.2Mn_0.4Mo_5.1三明治膜的基底,制备出四层膜.结果表明：附加的磁致伸缩并没有减小材料的巨磁阻抗(GMI)效应,而由于磁场下磁致伸缩材料的应力效应影响了三明治膜中的各向异性场,使三明治膜的GMI效应增大了4倍.再将制备态的四层膜在280℃下真空退火,退火态四层膜也增大了三明治膜的GMI效应,但可能由于磁致伸缩向磁性层中的扩散,其GMI效应相对于制备态四层膜则有所降低.关键词：巨磁阻抗(GMI)效应三明治膜TbDyFe薄膜各向异性场     

缺陷对铁单质薄膜磁致伸缩与磁矩演化的影响

磁致伸缩材料在传感、控制及能量与信息转换等领域应用前景广阔,此类材料的性能提升及工程应用已成为研究热点,但材料在制备与使用中不可避免会出现缺陷.本文以常用的铁磁性材料铁单质为研究对象,采用分子动力学方法分别建立无缺陷、孔洞缺陷与裂纹缺陷的铁单质磁致伸缩结构模型,分析了缺陷形式对铁单质薄膜磁致伸缩行为的影响,并从微观原子磁矩角度解释缺陷对磁致伸缩行为的影响机理.结果表明:缺陷会对其周围的原子磁矩产生影响,从而影响铁单质薄膜磁致伸缩,其中孔洞形缺陷对磁致伸缩的影响较小,裂纹形缺陷对磁致伸缩的影响较大.裂纹的方向会影响铁单质薄膜的磁致伸缩,与磁化方向平行的裂纹会降低材料在磁化方向上由初始状态至磁化达到饱和的最大磁致伸缩量;与磁化方向垂直的裂纹会提高材料在磁化方向上由初始状态至磁化达到饱和的最大磁致伸缩量.     

非晶金刚石薄膜的场致电子发射性能研究

利用真空磁过滤弧沉积技术制备出一种高sp³含量的非晶碳膜———非晶金刚石薄膜,并对这种非晶金刚石薄膜的场电子发射特性及其发射机理进行了研究．实验结果表明,在阈值电场低于20V/μm情况下,得到的场发射电流达20—40μA,薄膜的电子发射行为符合Fowler-Nordheim场发射理论．研究表明,这种非晶金刚石薄膜具有负的电子亲合势和较小的有效功函数以及相对较低的禁带宽度关键词：     

离轴磁场退火后Tb0.3Dy0.7Fe1.95〈110〉取向晶体的磁致伸缩\"跳跃\"效应

将〈110〉取向Tb_0.3Dy_0.7Fe_1.95合金棒放在与轴向成35°夹角的外磁场中退火处理,研究其在0—30 MPa预压应力σpre作用下的磁致伸缩效应.结果表明,σpre=0条件下的饱和磁致伸缩值λs由退火前的1023×10^-6提高到1650×10^-6;σpre关键词：磁致伸缩磁场退火磁致伸缩\"跳跃\"效应     

双层纳米磁电薄膜模型及分析

以层状磁电复合材料弹性力学模型为基础,建立了自由状态下双层纳米磁电薄膜的弹性力学模型,并以此为基础简单介绍了推导其磁电电压系数表达式的方法.计算了CoFe₂Ｏ₄/Pb（Zr_0．52Ti_0．48）Ｏ₃双层纳米复合薄膜的磁电电压系数理论值,分析结果表明基片对薄膜存在强烈的夹持效应,而且基片对压电与磁致伸缩两相材料间最佳体积比有一定的影响.关键词：磁电理论磁电薄膜铁电材料磁致伸缩     

1-3型纳米多铁复合薄膜中电场诱导的磁化研究

运用Landau-Devonshire热力学唯像理论,考虑铁电相和铁磁相的电致伸缩、磁致伸缩效应以及产生于铁电/铁磁和薄膜/基底界面的弹性应力作用,两次重整介电和磁作用系数得到了这种多铁系统在Landau自由能函数下的本征二次方磁电耦合形式,从而研究了外延1-3型纳米多铁复合薄膜中极化、磁化随薄膜厚度、温度的变化以及该薄膜中外加电场诱导的磁化变化.结果表明薄膜平面内的应压力的弛豫使得磁化强度和极化强度随薄膜厚度的增加而减少,外加电场不仅能诱导铁电相极化场翻转,而且由于铁电和铁磁相界面竖直方向的弹性耦合导致关键词：多铁磁电效应磁致伸缩薄膜     

超磁致伸缩材料性能测量实验

采用比较法和电桥法测量了Terfenol-D样品的磁致伸缩系数,并采用共振法测量了Terfenol-D样品的磁机械耦合系数.将超磁致伸缩材料特性测量实验引入本科实验教学,可以使学生在近代物理实验课程的学习中接触到材料科学研究前沿领域的技术与知识,有助于提高学生的创新意识和创新能力,激发学生的学习兴趣.     

铁单质薄膜磁致伸缩行为与磁矩演化研究

磁致伸缩材料在传感器、位移器件等领域应用前景广阔,对此类材料的制备与实验已成为研究热点,但使用分子动力学方法模拟其磁致伸缩过程中内部磁矩的演化仍缺乏相关研究.本研究以磁致伸缩材料铁单质为研究对象,采用分子动力学方法建立单畴铁单质磁致伸缩模型.分析了铁单质薄膜磁致伸缩行为随初始磁矩的变化,以及在磁场作用下微观原子磁矩的变化与宏观磁致伸缩之间的关系.结果表明:模型磁化构型的演化与磁致伸缩行为有着密切联系,随着外加磁场强度增大,原子磁矩与外加磁场方向相同的区域面积逐渐增大,宏观表现为模型的磁致伸缩随磁场强度增大而伸长,并最终达到饱和,而边界处的原子磁矩是模型是否达到饱和磁致伸缩的关键.     

高温退火对非晶CNx薄膜场发射特性的影响

采用射频磁控溅射方法在纯N2气氛中沉积了非晶CNx薄膜样品,并在真空中退火至900 ℃.对高温退火引起的CNx薄膜化学成分、键合结构及其场发射特性方面的变化进行研究.用傅里叶变换红外光谱和x射线光电子能谱分析样品的内部成分及键合结构的变化,其中sp2键及薄膜中N的含量与薄膜的场发射特性密切相关.退火实验的结果表明高温退火可以导致CNx薄膜中N含量大量损失,并在薄膜中形成大量sp2键,这些化学成分及键合结构上的变化将直接影响CNx薄膜的场发射特性.与其他温度退火样品相比,750 ℃退火的样品具有最低的阈值电场,显示出较好的场发射特性.     

Aluminium phthalocyanine chloride thin films for temperature sensing

This study presents the fabrication and temperature sensing properties of sensors based on aluminium phthalocyanine chloride(AlPcCl)thin films.To fabricate the sensors,50-nm-thick electrodes with 50-μm gaps between them are deposited on glass substrates.AlPcCl thin films with thickness of 50–100 nm are deposited in the gap between electrodes by thermal evaporation.The resistance of the sensors decreases with increasing thickness and the annealing at 100℃ results in an increase in the initial resistance of sensors up to 24%.The sensing mechanism is based on the change in resistance with temperature.For temperature varying from 25℃ to 80℃,the change in resistance is up to 60%.Simulation is carried out and results obtained coincide with experimental data with an error of±1%.     

The investigation of carbon nitride films annealed at different temperatures

The effects of thermal annealing on the component and microstructure of carbon nitride films deposited by vacuum cathodic arc method are reported. The bonding structure of the films is investigated by Raman spectroscopy, FTIR, XPS and valence band XPS. Upon annealing, the N content of the film drops gradually from original 31.0 to 17.0 at.% at 600 °C. The results of Raman spectroscopy, FTIR and valence XPS demonstrate that the films below 500 °C mainly consist of aromatic cluster component and polymeric component, which is rather stable upon the increasing of anealing temperatures. With the further increasing of the annealing temperatures from 400 to 600 °C, the fraction of polymeric component decreases and the aromatic component develops greatly. Meanwhile the films tend to transform towards the fullerene-like microstructure, which can be seen from the large separation of the N 1s peaks (>2.0 eV). As a result the N sp³ C bonds increase due to the rising of cross-linking between the graphite plane.     

Photoluminescence studies on nanostructured cadmium sulfide thin films prepared by chemical bath deposition method and annealed at different temperatures

Nanostructured cadmium sulfide (CdS) thin films have been prepared by chemical bath deposition (CBD) method and after post deposition annealing of the thin films at different temperatures, photoluminescence (PL) property has been studied. The effects of various photoexcitation wavelengths on the PL behaviour of different annealed films of CdS were studied by recording the PL spectra. The intensity of PL, the profile of the PL spectra and the effects of photoexcitation wavelength depend drastically on the temperature of the post deposition annealing of the thin films. The XRD patterns of the films show the presence of both the hexagonal and cubic phases (mixed phases). The emission peak arises from the surface defects of the CdS nanocrystalline thin films. Significant modification in the surface morphology of the CdS films upon annealing has been observed from the FESEM images. The morphology of the thin films is expected to influence the PL behaviour of the CdS thin films. The quantum size effect and size dependant PL have been observed.     

Wet chemical etching method for BST thin films annealed at high temperature

As a traditional etchant, pure buffered hydrofluoric acid (BHF), does not possess the ability to etch BST thin films annealed at high temperature, even though it works greatly on as-deposited Ba_0.5Sr_0.5TiO₃ (BST) films. In this paper, we developed an etchant by mixing BHF and strong acid (HNO₃, HCl, H₂SO₄ and H₃PO₄) and use it successfully on BST films annealed with high temperature. The experimental results show that a 1-8 wt% of strong acid acts as an efficient catalyst and the etching speed is significantly improved. The etched BST films show little distortions and smooth etching edges were recorded.     

The role of nickel addition and annealing temperature on ion storage performance of nanostructured nickel ferrite thin films

The sol–gel spin-coated nickel ferrite (NF), NiFe₂O₄, thin films were synthesised and the effect of annealing temperature and compositional ratio on different properties of samples were investigated. Electrochemical performance of the films was measured in the presence of KOH and LiClO₄/PC electrolyte. Generally, addition of nickel increases the current density. The NF thin films with molar ratio of 0.5 and annealed at 400 °C have the highest charge density value and the highest capacitance in both electrolytes. Annealing temperature had significant effect on electrochemical properties of NF thin films and the diffusion coefficient enhanced by increasing the annealing temperature. X-ray diffraction patterns of prepared samples showed the rhombohedral structure, hematite phase (α-Fe₂O₃), of iron oxide sample and the presence of inverse spinel structure confirms the formation of NF. Field emission scanning electron microscopy images revealed that the morphology of films changes from larvae shape to granular structure by nickel incorporation and the grain size increased by raising the annealing temperature. The absorption edge of the hematite shift to higher wavelength by annealing and nickel incorporation and band gap narrowing has been occurred.     

Excimer laser deposition of thin amorphous carbon films

A new carbon film deposition technique, based upon excimer laser vaporization of graphite in a flowing gas system has been developed. The low temperature vapor (LTV) technique alleviates high temperatures occurring in most other deposition methods. In this technique the UV laser ablation occurs in an inert flowing gas atmosphere. Atoms and molecules evaporated from graphite are cooled by gas entrainment before condensing on a substrate. The resulting films of amorphous carbon or hydrogenated amorphous carbon are free from strain. Measurement of the optical band gap of these films shows that E_g can be controlled by the hydrogen content of the carrier gas.     

Investigation of optical properties of annealed aluminum phthalocyanine derivatives thin films

Semiconducting molecular materials based on aluminum phthalocyanine chloride (AlPcCl) and bidentate amines have been successfully used to prepare thin films by using a thermal evaporation technique. The morphology of the deposited films was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Studies of the optical properties were carried out on films deposited onto quartz and (1 0 0) monocrystalline silicon wafers and films annealed after deposition. The absorption spectra recorded in the UV–vis region for the as-deposited and annealed samples showed two absorption bands, namely the Q- and B-bands. In addition, an energy doublet in the absorption spectra of the monoclinic form at 1.81 and 1.99 eV was observed. A band-model theory was employed in order to determine the optical parameters. The fundamental energy gap (direct transitions) was determined to be within the 2.47–2.59 and 2.24–2.44 eV ranges, respectively, for the as-deposited and annealed thin films.     

Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni₄₇Mn₂₄Ga₂₉ films grown by sputtering on (0?0?1) MgO using a stoichiometric Ni₂MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni₂MnGa bulk reference change their chemical composition to Ni₄₉Mn₂₆Ga₂₅. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni–Mn–Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.     

Residual stress and Curie temperature of Fe-N thin films prepared by dc magnetron sputtering at elevated temperature

Fe-N thin films were prepared by dc magnetron sputtering at elevated temperature of 80 °C. The residual stress of the thin film was characterized by means of grazing incidence X-ray diffraction method. The effect of magnetron sputtering parameter on residual stress was investigated. The results indicate that the nitrogen content in working gas has great effects on the residual stress in the Fe-N thin film, and the residual stress increases firstly and then decreases with the increasing of nitrogen content in working gas. Curie temperature measurement shows that tensile residual stress enhances the ferromagnetic-paramagnetic transition temperature of Fe-N thin films under the condition of same phase composition.     

Investigation of solid-state reaction in Ag/Sn nanostructured thin films at room temperature

Diffusion intermixing processes in nanostructured Ag/Sn thin-film system at room temperature were investigated by means of secondary neutral mass Spectrometry depth profiling technique. As it was confirmed by X-ray diffraction too, the reaction started already in the as-deposited sample. Since the bulk diffusion was frozen at room temperature, the Ag₃Sn phase was formed along the grain boundaries (GBs), gradually consuming the interior of grains, and was grown perpendicular to the GBs. At the same time, formation and growth of a small compact reaction layer near the interface were observed and the shift of the bordering parallel interfaces was controlled by GB diffusion. From the kinetics of the diffusion process in the above two mechanisms, both the interface velocity in the diffusion-induced grain boundary motion regime as well as the coefficient of parabolic growth in the planar growth regime were determined.