巨磁电阻特性的研究及其在物理实验教学上的应用

阐述了巨磁电阻效应的机理,利用AA002系列巨磁电阻(GMR)器件测量了单个巨磁电阻的阻值与磁场磁感应强度的关系以及AA002系列巨磁电阻(GMR)器件的输出电压与外磁场的关系,研究了巨磁电阻效应的特性,并设计了巨磁电阻器件在物理实验教学中的实用性比较广泛的系列实验.     

磁场诱导Gd5Ge4体系的低温输运跳跃和相分离研究

报告了作者对Gd_5Ge_4合金样品进行了磁化和电输运测量的研究结果,实验表明,磁化强度随外磁场的增加而出现台阶式跳跃,磁转变的可逆性与温度存在有密切的关联.在由磁场导致的磁转变附近电阻率随着磁场的增加亦表现出台阶式磁电阻现象,并在不同温区表现出正负不同的磁电阻效应,4.2K时呈现正磁电阻效应,而在16和20K时呈现出负磁阻效应,即铁磁相的阻值小于反铁磁相的阻值.结果证明了在Gd_5Ge_4中存在的典型相分离特征,从而在磁场诱导下发生了反铁磁到铁磁的转变,并对这种奇异磁电阻效应的物理机制进行了讨论.     

在不同压力下研究巨磁电阻氧化物的响应特性

本文主要介绍利用自主设计的拉压实验平台对巨磁电阻阻值随外界压力的变化情况进行研究。通过在不同的压力下测量巨磁电阻的伏安特性,得到一些结论,为以后进一步的研究开辟新方法新理念。     

高度取向石墨的巨磁电阻效应

石墨是准二维半金属材料，然而在通常细晶粒、无取向的石墨中并没有发现很大的磁电阻效应.在高度取向的石墨中发现了巨大的正磁电阻效应，在8.15 T的外磁场中，4.2，300 K温度下的磁电阻分别高达85300%和4950%.生产这一巨磁电阻效应的机制除正常磁电阻效应外，可能源于磁场诱导的类金属-绝缘体的转变 关键词： 磁电阻效应 石墨     

In替代(La2/3Ca1/3)(Mn(3-2x)/3In2x/3)O3体系巨磁电阻效应的研究

采用固态反应法制备了In替代的(La_2/3Ca_1/3)(Mn_(3-2x)/3In_2x/3)O₃(x=0.00，0.10，0.15)体系.通过测量其零场和1.6T磁场下样品的电阻-温度关系以及一定温度下磁电阻率与磁场的关系.发现随In³⁺替代量的增加其磁电阻峰和电阻峰均向低温方向移动，同时巨磁电阻效应减弱，磁电阻峰也展宽.这是由于In³⁺替代量的变化，引起 关键词：     

自旋阀与多层膜巨磁电阻的特性测量及比较

介绍磁性多层膜中自旋极化输运和巨磁电阻效应,简述自旋阀巨磁电阻与多层膜巨磁电阻在材料组成结构和工作原理方面的区别,利用和改造现有的高校物理实验室中的实验仪器并设计简易的实验电路测量这两种类型的巨磁电阻的磁敏特性,并根据实验测量的结果将这两种传感器在其灵敏度和测量范围上进行比较和研究.     

以高温超导体为基础的颗粒复合磁电阻器件

外加磁场对超导电性有强烈抑制作用，等效于一个显的正磁电阻．将高温超导体与具有不同磁电阻特性的其它材料复合，构成纳米颗粒复合体，可改变其磁场响应，调节成分配比还可使总磁电阻在特定的温度和外磁场下改变符号，即可调谐磁电阻．根据这一原理，我们制备了以La1.85Sr0.15CuO4和YBa2Cu3O7-δ为基础的颗粒复合磁电阻器件，并在其中观测到了以可调谐磁电阻为代表的丰富的磁电现象．这些器件在磁探测、磁记录和磁场标定等方面具有重要应用价值．     

用自组合仪器测量巨磁电阻材料的电阻

介绍了利用ZDY型自动磁场成型机、电脑化X-Y记录仪、计算机、HSZ-1数字磁强计等仪器测量巨磁电阻材料磁电阻的方法，同时对低温的测量装置进行了研究。     

巨磁电阻效应实验仪的研制与应用

阐述了巨磁电阻效应实验原理、实验内容和实验方法,该仪器可测量巨磁电阻阻值与磁感应强度关系,并与正常磁电阻、坡莫合金磁电阻特性进行比较,仪器还提供巨磁电阻传感器特性测量及系列应用实验供教学使用.     

磁电阻效应的研究进展

介绍了磁电阻效应的研究状况和进展,总结了铁磁金属的磁电阻效应、磁性多层膜和颗粒膜的巨磁阻效应、磁隧道电阻效应及氧化物铁磁体的超大磁阻效应的理论模型,并简要分析了磁电阻效应的物理机制。     

磁性材料新近进展

磁性材料是应用广泛、品种繁多的一类重要的功能材料，20世纪90年代以后发展十分迅速．稀土-3d过渡族磁性合金材料，如稀土水磁、巨磁致收缩材料、巨磁热效应材料，磁光效应材料等，以及非晶，纳米微晶磁性材料相继问世．1988年巨磁电阻效应的发现已获广泛应用，如读出磁头、传感器以及磁随机存储器等，并发展成为自旋电子学的新学科．文章简要介绍了近年来磁性材料的一些新进展。     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.     

磁电子学讲座 第九讲 金属磁性多层膜的结构及其对巨磁电阻效应的影响

介绍了金属磁性多层膜的微结构和磁结构的研究进展,简要综述了磁性多层膜的结构与巨磁电阻（ＧＭＲ）之间的关系     

Giant magnetoresistance and hysteretic effects in hybrid semiconductor/ferromagnet devices

We have investigated ballistic magnetoresistance effects in a two dimensional electron gas subjected to a periodic magnetic field that alternates in sign. The magnetic field was produced by a submicron ferromagnetic grating, made of either nickel or cobalt stripes, which was fabricated at the surface of the heterostructure. We observe giant magnetoresistance effects due to the channelling of electrons along lines of zero magnetic field orientated perpendicular to the current. Our semiclassical model accounts in great detail for all features in the magnetoresistance.     

Peculiarities of the giant injection magnetoresistance in the Ni-polymer-Cu system

The contribution of spin-polarized electrons, injected from a ferromagnet to a polymer, to the giant magnetoresistance has been investigated for the ferromagnet-polymer-nonmagnetic metal system. It is established that, at complete depolarization of injected electrons, magnetic field does not affect the conductivity of the system. The electric field effect (significant decrease in the threshold magnetic field) on the parameters of giant injection magnetoresistance is established.     

Normal spinel CuCr1.6Sb0.4S4, a new material with a giant magnetoresistance

A giant magnetoresistance, reaching 74% in a magnetic field of 38 T at 3 K, was observed in the CuCr_1.6Sb_0.4S₄ semiconductor spinel. The magnetic properties point to the existence of a magnetic two-phase state in this compound. The giant magnetoresistance was explained by the existence of the magnetic two-phase state due to strong s-d exchange.     

Magnetoresistance of an asymmetric quantum-size structure in a parallel magnetic field: Field asymmetry independent of the current direction

A new phenomenon, viz., field-asymmetric transverse magnetoresistance of a doped asymmetric quantum-size structure discovered in a magnetic field parallel to the heteroboundary planes, is studied experimentally and theoretically. The magnetoresistance asymmetry relative to the field direction, which is independent of the direction of transport current, is observed when a lateral electric field is embedded in the structure with the help of alloyed metallic contacts. In the theoretical part of the paper, it is shown that the contribution to current, which is asymmetric in the magnetic field, can be consistently described in the framework of the theory of spontaneous current states and photovoltaic effect in systems without an inversion center; the reason behind the emergence of this current is associated with the asymmetry of the energy spectrum of charge carriers relative to the quasimomentum. It is shown that the change in the size and shape of Fermi contours in a magnetic field determines the magnitude of the strong negative magnetoresistance associated with the intersubband scattering under investigation and is found to be responsible for the emergence of a qualitatively new effect mentioned in the title of this paper.     

Magnetotransport properties and magnetocaloric effects of Mn1.95Cr0.05Sb0.95Ga0.05 compound

The magnetotransport properties and magnetocaloric effects of the compound Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} have been studied. With decreasing temperature, a spontaneous first-order magnetic phase transition from ferrimagnetic (FI) to antiferromagnetic (AF) state takes place at T_s=200K. A metamagnetic transition from the AF to FI state can be induced by an external field, accompanied by a giant magnetoresistance effect of 57%. The magnetic entropy changes are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation. Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} exhibits a negative magnetocaloric effect, and the absolute values of ΔS_M^{max}(T,ΔH) are 4.4, 4.1, 3.6, 2.8 and 1.5 J/(kg·K) for magnetic field changes of 0－5T, 0－4T, 0－3T, 0－2T and 0－1T, respectively.     

Validity and Limitation of Semi-Classical Approaches to Giant Magnetoresistance in Magnetic Multilayers

The validity and limitation of semi-classical theories on giant magnetoresistance in magnetic multilayers are discussed on the basis of fundamental quantum statistical mechanics.