Nitrogen defect levels in InN: XANES study

The local and electronic structure of nitrogen-related defects in thin film of InN (0 0 0 1) has been studied using synchrotron-based X-ray absorption near edge structure (XANES) spectroscopy. Several defect levels within the band gap and the conduction band of InN were clearly resolved in XANES spectra around the nitrogen K-edge. Theoretical analysis of XANES data includes advanced “ab initio” simulations: self-consistent full multiple scattering calculations using muffin-tin approximation, non-muffin-tin finite difference approach to study the influence of non-muffin-tin effects on XANES shape as well as advanced local density approximation scheme for optimization of initial geometry around nitrogen defects. Theoretical analysis of XANES data allows to attribute the level observed at 1.7 eV above the conduction band mimimum to antisite nitrogen and a sharp resonance at 3.2 eV above the conduction band minimum to molecular nitrogen.     

Formation of indium nitride nanorods within mesoporous silica SBA-15

We report the first formation of arrays of InN nanorods inside the nanoscale channels of mesoporous silica SBA-15. In(NO3)3 dissolved in methanol was incorporated into SBA-15 powder without prior pore surface functionalization. Formation of InN nanorod arrays was carried out by ammonolysis at 700 degrees C for 8 h. The final products have been characterized by FT-IR spectra, (29)Si MAS NMR spectra, Raman spectra, XRD patterns, TEM images, nitrogen adsorption-desorption isotherm measurements, and optical spectroscopy. The freestanding InN nanorods observed after silica framework removal with HF solution show diameters of 6-7.5 nm and lengths of 25-50 nm. Formation of a trace amount of In2O3 was also verified. The InN nanorods exhibit a broad band centered at around 550-600 nm, and a band gap energy of 1.5 eV was determined. No light absorption in the near-IR region was measured. The nanorods give a weak emission band centered at around 600 nm. These optical properties are believed to be related to the possible incorporation of oxygen during InN nanorod synthesis.     

N掺杂TiO_2光催化剂的微结构与吸光特性研究

以紫外可见漫反射光谱(UV-VIS-DRS)和X射线光电子能谱(XPS)分析和研究了四种方法制备的N掺杂TiO2光催化剂的结构,即水解法(N/TiO2-H)、氨热还原法(N/TiO2-A)、机械化学法(N/TiO2-M)和尿素热处理法(N/TiO2-T)等.结果表明,N/TiO2-H和N/TiO2-T两种催化剂在490 nm处有吸收带边,可见光激发途径是掺杂的N以填隙方式形成的杂质能级吸收电子发生的跃迁引起的;而N/TiO2-A和N/TiO2-M两种催化剂在整个可见光区域内具有可见光吸收,其对可见光的激发途径是掺杂N和氧空缺共同作用的结果.理论计算的N杂质能级位于价带上0.75 eV,与实验观察到的吸收带边结果十分吻合.XPS结果表明,几种催化剂的N1 s结合能位置都在399 eV附近,显示为填隙掺杂的N原子.填隙掺杂的N/TiO2,其Ti原子的2p结合能与未掺杂的TiO2相比增加了+0.3-+0.6 eV,而O1s电子的结合能增加了+0.2-+0.5eV,这是因为填隙的N原子夺取Ti和O的电子,Ti和O原子周围的电子密度降低了.电子能谱和吸光特性的研究都表明,掺杂的机理是在TiO2晶格内形成N原子的填隙.     

Density functional study of the interfacial electron transfer pathway for monolayer-adsorbed InN on the TiO(2) anatase (101) surface

Density functional theory (DFT) in connection with ultrasoft pseudopotential (USP) and generalized gradient spin-polarized approximations (GGSA) is applied to calculate the adsorption energies and structures of monolayer-adsorbed InN on the TiO(2) anatase (101) surface and the corresponding electronic properties, that is, partial density of states (PDOS) for surface and bulk layers of the TiO(2) anatase (101) surface and monolayer-adsorbed InN, to shed light on the possible structural modes for initial photoexcitation within the UV/vis adsorption region followed by fast electron injection through the InN/TiO(2) interface for an InN/TiO(2)-based solar cell design. Our calculated adsorption energies found that the two most probable stable structural modes of monolayer-adsorbed InN on the TiO(2) anatase (101) surface are (1) an end-on structure with an adsorption energy of 2.52 eV through N binding to surface 2-fold coordinated O (O(cn2)), that is, InN-O(cn2), and (2) a side-on structure with an adsorption energy of 3.05 eV through both N binding to surface 5-fold coordinated Ti (Ti(cn5)) and In bridging two surface O(cn2), that is, (O(cn2))(2)-InN-Ti(cn5). Our calculated band gaps for both InN-O(cn2) and (O(cn2))2-InN-Ti(cn5) (including a 1.0-eV correction using a scissor operator) of monolayer-adsorbed InN on the TiO(2) anatase (101) surface are red-shifted to 1.7 eV (730 nm) and 2.3 eV (540 nm), respectively, which are within the UV/vis adsorption region similar to Gratzel's black dye solar cell. Our analyses of calculated PDOS for both surface and bulk layers of the TiO(2) anatase (101) surface and monolayer-adsorbed InN on the TiO(2) anatase (101) surface suggest that the (O(cn2))(2)-InN-Ti(n5) configuration of monolayer-adsorbed InN on the TiO(2) anatase (101) surface would provide a more feasible structural mode for the electron injection through the InN/TiO(2) interface. This is due to the presence of both occupied and unoccupied electronic states for monolayer-adsorbed InN within the band gap TiO(2) anatase (101) surface, which will allow the photoexcitation within the UV/vis adsorption region to take place effectively, and subsequently the photoexcited electronic states will overlap with the unoccupied electronic states around the lowest conduction band of the TiO(2) anatase (101) surface, which will ensure the electron injection through the InN/TiO(2) interface. Finally, another thing worth our attention is our preliminary study of double-layer-adsorbed InN on the TiO(2) anatase (101) surface, that is, (O(cn2))(2)-(InN)(2)-Ti(cn5), with a calculated band gap red-shifted to 2.6 eV (477 nm) and a different overlap of electronic states between double-layer-adsorbed InN and the TiO(2) anatase (101) surface qualitatively indicated that there is an effect of the thickness of adsorbed InN on the TiO(2) anatase (101) surface on both photoexcitation and electron injection processes involved in the photoinduced interfacial electron transfer through InN/TiO(2). A more thorough and comprehensive study of different layers of InN adsorbed in all possible different orientations on the TiO(2) anatase (101) surface is presently in progress.     

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory with the with the Heyd-Scuseria-Ernzerhof {HSE06 [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 134, 8207 (2003); 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In content is calculated and a strong bowing at low In content is found, described by bowing parameters 2.29 eV at 6.25% and 1.79 eV at 12.5%, indicating the band gap cannot be described by a single composition-independent bowing parameter. Valence-band maxima (VBM) and conduction-band minima (CBM) are aligned by combining bulk calculations with surface calculations for nonpolar surfaces. The influence of surface termination [(1100) m-plane or (1120) a-plane] is thoroughly investigated. We find that for the relaxed surfaces of the binary nitrides the difference in electron affinities between m- and a-plane is less than 0.1 eV. The absolute electron affinities are found to strongly depend on the choice of XC functional. However, we find that relative alignments are less sensitive to the choice of XC functional. In particular, we find that relative alignments may be calculated based on Perdew-Becke-Ernzerhof [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 134, 3865 (1996)] surface calculations with the HSE06 lattice parameters. For InGaN we find that the VBM is a linear function of In content and that the majority of the band-gap bowing is located in the CBM. Based on the calculated electron affinities we predict that InGaN will be suited for water splitting up to 50% In content.     

Local hydration environments of amino acids and dipeptides studied by X-ray spectroscopy of liquid microjets

The nitrogen K-edge spectra of aqueous proline and diglycine solutions have been measured by total electron yield near-edge X-ray absorption fine structure (NEXAFS) spectroscopy at neutral and high pH. All observed spectral features have been assigned by comparison to the recently reported spectrum of aqueous glycine and calculated spectra of isolated amino acids and hydrated amino acid clusters. The sharp preedge resonances at 401.3 and 402.6 eV observed in the spectrum of anionic glycine indicate that the nitrogen terminus is in an "acceptor-only" configuration, wherein neither amine proton is involved in hydrogen bonding to the solvent, at high pH. The analogous 1s --> sigma(NH) preedge transitions are absent in the NEXAFS spectrum of anionic proline, implying that the acceptor-only conformation observed in anionic glycine arises from steric shielding induced by free rotation of the amine terminus about the glycine CN bond. Anionic diglycine solutions exhibit a broadened 1s --> pi(CN) resonance at 401.2 eV and a broad shoulder resonance at 403 eV, also suggesting the presence of an acceptor-only species. Although this assignment is not as unambiguous as for glycine, it implies that the nitrogen terminus of most proteins is capable of existing in an acceptor-only conformation at high pH. The NEXAFS spectrum of zwitterionic lysine solution was also measured, exhibiting features similar to those of both anionic and zwitterionic glycine, and leading us to conclude that the alpha amine group is present in an acceptor-only configuration, while the end of the butylammonium side chain is fully solvated.     

A Probe of Valence and Conduction Band Electronic Structure of Lead Oxide Films for Photodetectors

We investigate how the electronic structure of amorphous lead oxide (a-PbO) films deposited on ITO substrate is changed after annealing at various temperatures. Both experimental soft X-ray spectroscopic and density functional theory (DFT) based computational techniques are used to explore the electronic structure of this material. X-ray emission, resonant X-ray inelastic scattering, and X-ray absorption spectroscopic techniques are employed to directly probe the valence and conduction bands. We discover that the films are very stable and remain amorphous when exposed to temperatures below 300 °C. An amorphous-to-polycrystalline (α-PbO phase) transformation occurs during annealing at 400 °C. At 500 °C, an alpha to beta phase change is observed. These structural modifications are accompanied by the band gap value changing from 1.4±0.2 eV to 2.0±0.2 eV upon annealing at 400 °C and to 2.6±0.2 eV upon annealing at 500 °C. A difference between surface and bulk structural properties is found for all samples annealed at 500 °C and above; these samples also exhibit an unexpected suppression of O : 2p density of states (DOS) near the bottom of the conduction band, whereas additional electronic states appear well within the valence band. This study provides a significant step forward to understanding the electronic properties of two polymorphic forms of PbO needed for optimization of this material for use in X-ray sensors.     

Functional K-doping of eumelanin thin films: density functional theory theory and soft x-ray spectroscopy experiments in the frame of the macrocyclic protomolecule model

We demonstrate the possibility to achieve the doping of eumelanin thin films through K(+) incorporation during the electrodeposition of the film. K-doping changes the optical properties of the eumelanin thin films, reducing the energy gap from 1.0 to 0.6 eV, with possible implications for the photophysical properties. We have identified the doping-related occupied and unoccupied electronic states and their spectral weight using resonant photoemission spectroscopy (ResPES) and x-ray absorption at the C and N K-edges (near edge x-ray absorption fine spectroscopy, NEXAFS). All data are consistently interpreted by ab initio calculations of the electronic structure within the frame of the macrocycle model developed for the eumelanin protomolecule. Our analysis puts in evidence the intercalation of K with one specific oligomer (a tetramer composed of one indolequinone and 3 hydroquinone monomers) in correspondence of the nitrogen macrocycle. The predicted variation of the tetramer spacing is also in agreement with the recent x-ray diffraction experiments. The charge donation from K to N and C atoms gives rise to new electronic states at the top of the valence band and in NEXAFS resonances of the unoccupied orbitals. The saturation of the tetramer macrocycles leaves an excess of K that bind to N and C atoms in alternative configurations, as witnessed by the occurrence of additional spectral features in the carbon-related ResPES measurements.     

Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source

Epitaxial InN films have been successfully grown on c-plane GaN template by gas-source molecular-beam epitaxy with hydrazoic acid (HN3) as an efficient nitrogen source. Results in residual-gas analyzer show that the HN3 is highly dissociated to produce nitrogen radicals and can be controlled in the amounts of active nitrogen species by tuning HN3 pressure. A flat and high-purity InN epifilm has been realized at the temperature near 550 degrees C, and a growth rate of 200 nm/hr is also achieved. Moreover, the epitaxial relationship of the InN(002) on the GaN(002) is reflected in the X-ray diffraction, and the full-width at half-maximum of the InN(002) peak as narrow as 0.05 degrees is related to a high-quality crystallinity. An infrared photoluminescence (PL) emission peak at 0.705 eV and the integrated intensity increasing linearly with excitation power suggest that the observed PL can be attributed to a free-to-bound recombination.     

Photoemission studies of polythiophene and polyphenyl films produced via surface polymerization by ion-assisted deposition

Conducting polymer films are grown by mass-selected, hyperthermal thiophene ions coincident on a surface with a thermal beam of organic monomers of either alpha-terthiophene (3T) or p-terphenyl (3P) neutrals. Mass spectrometry and X-ray photoelectron spectroscopy previously verified polymerization of both 3T and 3P by 200 eV C(4)H(4)S(+) during surface polymerization by ion-assisted deposition (SPIAD). The electronic structure of these films are probed here by ultraviolet photoelectron spectroscopy (UPS) and polarized near-edge X-ray absorption fine structure spectroscopy (NEXAFS) and compared with similar spectra of evaporated films. The conducting polymer films formed by SPIAD display new valence band features resulting from a reduction in both their band gap and barrier to hole injection, which are calculated from the occupied and unoccupied valence band states measured by UPS and NEXAFS. These changes in film electronic structure result from an increase in the electron conjugation length and other changes in film structure induced by SPIAD.     

Probing the electronic structures of ternary perovskite and pyrochlore oxides containing Sn(4+) or Sb(5+)

Experimental and computational studies were performed to understand the electronic structure of ternary perovskites (ASnO(3), A = Ca, Sr, Ba, Cd), pyrochlores (RE(2)Sn(2)O(7), RE = Y, La, Lu; Cd(2)Sb(2)O(7)), and defect pyrochlore oxides (Ag(2)Sb(2)O(6)) containing the main group ions Sn(4+) and Sb(5+). In all compounds, the lowest energy states in the conduction band arise primarily from the antibonding Sn/Sb 5s-O 2p interaction. In the alkaline-earth stannate perovskites (BaSnO(3), SrSnO(3), and CaSnO(3)) the conduction bandwidth decreases strongly in response to the octahedral tilting distortion triggered by the decreasing size of the alkaline-earth cation. This in turn leads to a corresponding increase in the band gap from 3.1 eV in BaSnO(3) to 4.4 eV in CaSnO(3). The band gap of CdSnO(3) is relatively small (3.0 eV) considering the large octahedral tilting distortion. The origin of this apparent anomaly is the mixing between the empty Cd 5s orbitals and the antibonding Sn 5s-O 2p states. This mixing leads to a widening of the conduction band and a corresponding decrease in the band gap. The participation of the normally inert A-site cation in the electronic structure near the Fermi level can be considered an inductive effect, as it utilizes substitution on the A-site to directly modify the electronic structure of the SnO(3)(2)(-) framework. While the pyrochlore structure is more complicated, the energy level and width of the lowest energy conduction band can be analyzed in a manner similar to that utilized on the perovskite structure. The Sn-O-Sn and Sb-O-Sb bonds are highly distorted from linear geometry in pyrochlore, leading to a relatively narrow conduction band and a wide band gap. In Cd(2)Sb(2)O(7) and Ag(2)Sb(2)O(6) the Cd(2+) and Ag(+) ions exhibit a strong inductive effect that widens the conduction band and lowers the band gap significantly, very similar to the effect observed in the perovskite form of CdSnO(3).     

pH dependence of the electronic structure of glycine

The carbon, nitrogen, and oxygen K-edge spectra were measured for aqueous solutions of glycine by total electron yield near-edge X-ray absorption fine structure (TEY NEXAFS) spectroscopy. The bulk solution pH was systematically varied while maintaining a constant amino acid concentration. Spectra were assigned through comparisons with both previous studies and ab initio computed spectra of isolated glycine molecules and hydrated glycine clusters. Nitrogen K-edge solution spectra recorded at low and moderate pH are nearly identical to those of solid glycine, whereas basic solution spectra strongly resemble those of the gas phase. The carbon 1s --> pi*(C=O) transition exhibits a 0.2 eV red shift at high pH due to the deprotonation of the amine terminus. This deprotonation also effects a 1.4 eV red shift in the nitrogen K-edge at high pH. Two sharp preedge features at 401.3 and 402.5 eV are also observed at high pH. These resonances, previously observed in the vapor-phase ISEELS spectrum of glycine, have been reassigned as transitions to sigma* bound states. The observation of these peaks indicates that the amine moiety is in an acceptor-only hydrogen bond configuration at high pH. At low pH, the oxygen 1s --> pi*(C=O) transition exhibits a 0.25-eV red shift due to the protonation of the carboxylic acid terminus. These spectral differences indicate that the variations in electronic structure observed in the NEXAFS spectra are determined by the internal charge state and hydration environment of the molecule in solution.     

The electronic structure and adsorption geometry of L-histidine on Cu(110)

The adsorption of L-histidine on clean and oxygen-covered Cu(110) surfaces has been studied by soft X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The valence band spectra, carbon, nitrogen and oxygen 1 s XPS and N K edge absorption spectra were measured for submonolayer, monolayer, and multilayer films. The spectra provide a detailed picture of the electronic structure and adsorption geometry at each coverage. In the monolayer, the histidine molecules are randomly oriented, in contrast to the submonolayer regime, where the molecules are coordinated to the copper surface with the imidazole functional group nearly parallel to, and strongly interacting with, the surface. The pi*/sigma* intensity ratio in NEXAFS spectra at the nitrogen edge varies strongly with angle, showing the imidazole ring is oriented. Adsorption models are proposed.     

DFT study on the structural and electronic properties of Pt-doped boron nitride nanotubes

First-principles calculations based on density functional theory were carried out to investigate the structural and electronic properties of Pt substitution-doped boron nitride (BN) nanotubes. The electronic and structural properties were studied for substituted Pt in the boron and the nitrogen sites of the (BN) nanotube. The band gap significantly diminishes to 2.095 eV for Pt doping at the B site while the band gap diminishes to 2.231 eV for Pt doping at the N site. The band density increases in both the valence band and the conduction band after doping. The effects of the hardness and softness group 17 (halogen elements) were calculated by density functional theory (DFT).     

Core level study of alanine and threonine

Core level X-ray photoemission spectra (XPS) and near edge X-ray absorption fine structure (NEXAFS) spectra of alanine and threonine in the gas phase have been measured at the carbon, nitrogen, and oxygen K edges and interpreted in the light of theoretical calculations. For the computations, a set of approximations is made which allows sufficiently accurate calculations of several conformers to be performed in reasonable computing time. The accuracy has been checked by comparing results obtained for proline to our previous, higher level calculations. The photoemission spectra at the carbon and oxygen edges are assigned and compared. The nitrogen 1s photoemission peaks show anomalous broadening which we relate to the populations and types of conformers. The carbon K-edge NEXAFS spectra of alanine and threonine are compared with our previous data on glycine and resonances assigned accordingly. The nitrogen K-edge NEXAFS spectra of alanine and threonine do not show measurable effects due to the population of conformers, in contrast to the photoemission results. At the oxygen K edge, the spectra of these amino acids are similar with two prominent peaks assigned to transitions of O 1s electrons from the oxo and hydroxyl groups to vacant pi* and sigma* orbitals and additional intensity for threonine due to the second OH group. Conformer effects are observable in photoemission but appear to be more difficult to resolve in photoabsorption. We explain this by energetic shifts of opposite sign for the core hole states and unoccupied orbitals, which causes partial cancelation in NEXAFS but not in photoemission.     

Observation of negative charge trapping and investigation of its physicochemical origin in newly synthesized poly(tetraphenyl)silole siloxane thin films

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane, was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings were responsible for negative charge trapping, while the Si-O-Si inorganic linkages provided the intrachain energy barrier for controlling electron transport. The polysilole siloxane dielectric thin films were fabricated by spin-coating and curing of the polymers, followed by characterization with spectroscopic ellipsometry (SE), near edge X-ray absorption fine structure spectroscopy (NEXAFS), and photoemission spectroscopy (PES). The abrupt increase in density and decrease in thickness of the thin film at a curing temperature of 100 °C was attributed to a thermodynamically preferred state in the nanoscopic arrangement of the polymer chains; this was due to cofacial π-π interactions in a skewed manner between peripheral phenyl groups of the (tetraphenyl)silole rings of the adjacent polymer chains. Using the NEXAFS spectrum to assess high electron affinity, the LUMO energy level of the dielectric thin film cured at 150 °C was positioned 1 eV above the Fermi energy level (E(F)). The electron trapping of the dielectric thin films was confirmed from the positive flat band shift (ΔV(FB)) in the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure, which strongly verified the polymer design concept. From the simple kinetics model of the electron transport, it was proposed that the flat band shift (ΔV(FB)) or trap density of the negative charges (|ρ|) was logarithmically proportional to the decay constant (β) for the electron-tunneling process. When a phenyl group of a silole ring in a polymer chain was inserted into the two available phenyl groups of another silole ring in another polymer chain, the electron transfer between the groups was enhanced, decreasing the trap density of the negative charges (|ρ|). For the thermodynamically preferred state generating the high refractive index, the distance between the two phenyl groups of the adjacent polymer chains was estimated to be in the range of 0.27-0.36 nm.     

Manipulating the electronic structures of silicon carbide nanotubes by selected hydrogenation

We show that the electronic and atomic structures of silicon carbide nanotubes (SiCNTs) undergo dramatic changes with hydrogenation from first-principles calculations based on density-functional theory. The exo-hydrogenation of a single C atom results in acceptor states close to the highest occupied valence band of pristine SiCNT, whereas donor states close to the lowest unoccupied conduction band appear as a Si atom being hydrogenated. Upon fully hydrogenating Si atoms, (8,0) and (6,6) SiCNTs become metallic with very high density of states at the Fermi level. The full hydrogenation of C atoms, on the other hand, increases the band gap to 2.6 eV for (8,0) SiCNT and decreases the band gap to 1.47 eV for (6,6) SiCNT, respectively. The band gap of SiCNTs can also be greatly increased through the hydrogenation of all the atoms.     

Se掺杂对单层MoS2电子能带结构和光吸收性质的影响

基于密度泛函理论的第一性原理方法,计算了Se掺杂单层MoS₂能带结构和光吸特性,并分析了对其光解水性质的影响。结果表明：本征单层MoS₂为直接带隙结构,禁带宽度为1.740 eV,导带底电位在H⁺/H₂还原势之上0.430 eV,价带顶电位在O₂/H₂O的氧化势之下0.080 eV,具有可见光催化分解水的能力,但氧化和还原能力不均衡,导致单层MoS₂作为光催化剂分解水的效率不高。通过Se掺杂计算发现,单层MoS₂的禁带宽度变为1.727 eV,相应的光吸收谱变化幅度几乎不变,且体系的形成能较低,表明其热力学稳定性良好。然而,导带底电位调整到H⁺/H₂还原势之上0.253 eV,价带顶电位处于O₂/H₂O的氧化势之下0.244 eV,平衡了氧化与还原能力,单层MoS₂可见光催化分解水的效率得到提高。     

Mechanisms of photoluminescence at cds polycrystalline electrodes in contact with aqueous electrolytes

The red and infrared emissions in the photoluminescence spectra of polycrystalline CdS electrodes have been studied as a function of the atmosphere and temperature of annealing, excitation light intensity, applied bias and electrolyte composition. The experimental results suggest that the red luminescence is associated with a recombination mechanism involving valence band holes and electrons trapped at sulfur vacancies at about 0.7 eV below the conduction band edge. Infrared emission seems to involve, besides sulfur vacancies, cadmium vacancies (hole traps) at about 0.3 eV above the valence band edge. Both hole injection rate and concentration of S and Cd vacancies are the parameters determining the shape of the luminescence spectra.