Nanoscale domain switching mechanism in Pb(Zr,Ti)O<Subscript>3</Subscript> thin film

Pb(Zr,Ti)O₃ (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net     

Acoustic emission and thermal expansion of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> and Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> crystals

The temperature dependence of the elongation per unit length for Pb(Mg_1/3Nb_2/3)O₃ crystals unannealed after growth and mechanical treatment is investigated in the course of thermocycling. It is revealed that this dependence deviates from linear behavior at temperatures below 350°C. The observed deviation is characteristic of relaxors, is very small in the first cycle, increases with increasing number n of thermocycles, and reaches saturation at n≥3. In the first cycle, a narrow maximum of the acoustic emission activity is observed in the vicinity of 350°C. In the course of thermocycling, the intensity of this maximum decreases and becomes zero at n>3. For (1?x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ crystals, the dependence of the temperature of this acoustic emission maximum on x exhibits a minimum. It is assumed that the phenomena observed are associated with the phase strain hardening due to local phase transitions occurring in compositionally ordered and polar nanoregions.     

Dielectric and optical properties of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.8</Subscript>Ti<Subscript>0.2</Subscript>O<Subscript>3</Subscript> (PMNT-0.2) ferroelectric relaxor single crystals

The dielectric and optical (optical transmission, small-angle light scattering, birefringence) properties of PMNT-0.2 single crystals and their variation induced by a dc electric field have been studied. The birefringence was found to increase anomalously at the transition from the rhombohedral ferroelectric to the inhomogeneous relaxor phase (the spontaneous ferroelectric transition temperature T_sp). Below T_sp, the dielectric and optical properties were observed to exhibit anomalies originating from reorientation and growth of domains in size. Unlike ferroelectric relaxors of the type of PbB′_1/3B′_2/3O₃ and PbB′_1/2B′_1/2O₃, in PMNT-0.2 neither induction of the ferroelectric phase by an electric field nor thermally stimulated destruction of the ferroelectric state occurs through the percolation mechanism (i.e., they are not accompanied by anomalously narrow maxima in small-angle light scattering). This is attributed to the inhomogeneous structure of the relaxor phase, as a result of which the phase transition does not take place simultaneously in various regions of the crystal.     

Gas sensor based on nanosize In<Subscript>2</Subscript>O<Subscript>3</Subscript>:Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> film

Nanosize films of In₂O₃:Ga₂O₃ (96:4 weight %) have been deposited on a glassceramic substrate by the method of rf magnetron sputtering. The surfaces of fabricated films were studied with use of a scanning electron microscope; sizes of grains were determined and the thicknesses of films were measured. In order to prepare a gas-sensitive structure, a thin catalytic palladium layer and ohmic comb contacts were deposited on the In₂O₃:Ga₂O₃ film surface by the method of ion-plasma sputtering. The sensitivity of sensors based on the glassceramic/In₂O₃:Ga₂O₃ (96:4 weight %)/Pd structure to different concentrations of propane and butane gas mixture, as well as to methane was investigated at temperatures of working substance from 250 to 300°C.     

Roles of Al-doped ZnO (AZO) modification layer on improving electrochemical performance of LiNi<Subscript>1/3</Subscript>Co<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>O<Subscript>2</Subscript> thin film cathode

Al-doped ZnO (AZO) was sputtered on the surface of LiNi_1/3Co_1/3Mn_1/3O₂ (NCM) thin film electrode via radio frequency magnetron sputtering, which was demonstrated to be a useful approach to enhance electrochemical performance of thin film electrode. The structure and morphology of the prepared electrodes were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectrometer, and transmission electron microscopy techniques. The results clearly demonstrated that NCM thin film showed a strong (104) preferred orientation and AZO was uniformly covered on the surface of NCM electrode. After 200 cycles at 50 μA μm^?1 cm^?2, the NCM/AZO-60s electrode delivered highest discharge capacity (78.1 μAh μm^?1 cm^?2) compared with that of the NCM/AZO-120s electrode (62.4 μAh μm^?1 cm^?2) and the bare NCM electrode (22.3 μAh μm^?1 cm^?2). In addition, the rate capability of the NCM/AZO-60s electrode was superior to the NCM/AZO-120s and bare NCM electrodes. The improved electrochemical performance can be ascribed to the appropriate thickness of the AZO coating layer, which not only acted as HF scavenger to keep a stable electrode/electrolyte interface but also reduced the charge transfer resistance during cycling.     

A comparative Raman study of 0.65(PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>) -0.35(PbTiO<Subscript>3</Subscript>) single crystal and thin film

We report a comparative Raman study of 0.65(PbMg_1/3Nb_2/3O₃)-0.35(PbTiO₃) (PMN-0.35PT) single crystal and thin film. Raman spectra investigation indicates a change in bulk from the high temperature cubic to the tetragonal phase and then to the low temperature Mc monoclinic phase. The transition temperatures are in good agreement with the ones previously observed by dielectric measurements on the same sample. In contrast, we observe no phase transition to the monoclinic phase in the PMN-0.35PT 4000 Å thick film and only a cubic to tetragonal diffuse transition has been determined at high temperature. The enhanced stability of the tetragonal phase and the absence of low temperature monoclinic phase have been attributed to the in plane strain.     

The role of the secondary pyroelectric effect in a ferroelectric relaxor 0.72Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-0.28PbTiO<Subscript>3</Subscript>

The depth profile of the pyroelectric coefficient effective values of a 0.72Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ (PMN-0.28PT) single crystal is studied. It was shown that owing to high pyroelectric coefficients the secondary pyroelectric effect significally contributes (∼40%) to the total pyroelectric coefficient.     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

Impedance analysis of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric ceramic

AC impedance spectroscopy technique has been used to study electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ceramic. Complex impedance plots were fitted with three depressed semicircles, which are attributed to crystalline layer, plate boundary and grain boundary and all three were found to comprise of universal capacitance nature [C = C0w ⁿ⁻¹]. Grain boundary resistance and capacitance evaluated from complex impedance plots have larger values than that of plate boundary and crystalline layer. The activation energies (E _a) for DC-conductance in grain boundary, plate boundary and crystalline layer are 0.68 eV, 0.89 eV and 0.89 eV, respectively. Relaxation activation energies calculated from impedance plots showed similar values, 0.81 eV and 0.80 eV for crystalline layer and plate boundary, respectively. These activation energy values are found to be consistent with the E _a value of oxygen vacancies in perovskite materials. A mechanism is offered to explain the generation of oxygen vacancies in BLT ceramic and its role in temperature dependence of DC-conductance study.      

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Structural and optical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films prepared by chemical solution methods

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films have been grown on Pt/Ti/SiO₂/Si substrates by chemical solution methods. X-ray diffraction analysis shows that BLT thin films are polycrystalline with (171)-preferential orientation. Atomic force microscopy investigation shows that they have large grains about 120 nm in size. A Pt/BLT/Pt capacitor has been fabricated and showed excellent ferroelectricity, with a remnant polarization and coercive field of 24 μC/cm² and 116 kV/cm, respectively. The capacitor shows no polarization fatigue up to 10⁹ switching cycles. The optical constants (n,k) of the BLT thin films in the wavelength range 0.35–1.7 μm were obtained by spectroscopic ellipsometry measurements, and the band-gap energy was found to be about 3.25 eV. Received: 16 October 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/65830-734, E-mail: gswang@mail.sitp.ac.cn     

Polar nanoregions in Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> (PMN): insights from a supercell approach

We report construction of a model of polar nanoregions in the PMN relaxor ferroelectric based on first-principles lattice dynamics for chemically ordered supercells [S.A. Prosandeev et al., Phys. Rev. B 70, 134110 (2004)], combined with invariance under permutations and dipole-dipole interaction as a source supporting randomly oriented residual polarization. Representative analytical estimates of polar nanore-gion — supercell mapping reproduce both nonzero local and zero macroscopic polarization of the structure, as well as the temperature change of the supercell anisotropy at cooling and field cooling.     

Piezoelectric coefficients of multilayer Pb(Zr,Ti)O<Subscript>3</Subscript> thin films

Sol–gel techniques were used to prepare thin films of Pb(Zr _x ,Ti_1−x )O₃ (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d ₃₃ piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.     

Heterophase states in 0.10PbTiO<Subscript>3</Subscript>-0.90Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> crystals

A new model of the elastic matching of phases is proposed, and heterophase structures near the morphotropic phase boundary in 0.10PbTiO₃-0.90Pb(Zn_1/3Nb_2/3)O₃ crystals are studied. Unique behavior of the unit cell parameters is found to favor the elastic matching of the ferroelectric tetragonal and orthorhombic phases under the conditions of complete or partial relaxation of internal mechanical stresses at a volume concentration ratio of these phases of about 20/80% and temperatures of T=20–300 K. Interrelations between the volume concentrations of different domain (twin) types and of the coexisting phases are analyzed.     

Highly (100) oriented Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> films grown on amorphous substrates by pulsed laser deposition

Pb(Zr_0.52Ti_0.48)O₃ (PZT)/LaNiO₃ (LNO) thin films with highly (100) out of plane orientation were produced on SiO₂/Si(100) and alkaline earth aluminosilicate glass substrates by pulsed laser deposition (PLD). Orientations of both PZT and LNO films were evaluated using X-ray diffraction. The pure (100)-oriented PZT/LNO films were obtained under optimized deposition conditions. Time of flight-secondary ion mass spectrometry analysis showed that LNO could effectively block interdiffusion between the PZT films and the substrates. Fairly smooth surfaces of the PZT films with roughness of about 4 nm were observed using an atomic force microscope. Cross sectional examination revealed that the films grew in columnar grains. The PZT films grown on both SiO₂/Si and glass substrates demonstrated very good ferroelectric characteristic at room temperature with remnant polarization of up to 26 μC/cm². PACS 79.20.DS; 77.84.DY; 78.70.Ck     

Photoactive lead ions in ferroelectric Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> and paramagnetic resonance

The recharging of lead matrix ions upon exposure to light in pure, doped, and nonstoichiometric lead germanate crystals has been studied using electron paramagnetic resonance. It has been shown that the maximum concentration of metastable Pb³⁺ ions is achieved in crystals doped with chlorine, fluorine, titanium, and in samples with excess lead oxide. The annealing activation energy and the parameters of the superhyperfine interaction of Pb³⁺ paramagnetic centers have been determined.     

La<Subscript>9.33</Subscript>Si<Subscript>6</Subscript>O<Subscript>26</Subscript> electrolyte thin films for IT-SOFC application deposited by a HIPIMS/DC hybrid magnetron sputtering process

Apatite-type La_9.33Si₆O₂₆ thin films were elaborated by co-sputtering of two metallic La and Si targets powered, respectively, by high power impulse magnetron sputtering and direct current sources, in pure Ar atmosphere, followed by a subsequent high temperature oxidation treatment in air. The structural and chemical features of these films have been assessed by X-ray diffraction and scanning electron microscopy (SEM). The film with near lanthanum silicate La/Si atomic ratio deposited on a porous Ni-YSZ cermet substrates was initially amorphous. After thermal oxidation at 1,173 K in air, the coating crystallised under the expected apatite structure. SEM observation revealed that both film compactness and thickness increased after thermal oxidation. The conductivity evolution with temperature of the pure apatite-like lanthanum silicate coatings, as measured by complex impedance spectroscopy, showed that the activation energy of is quite low compared to the literature data.     

Magnetic and ferroelectric ordering in BiMn<Subscript>2</Subscript>O<Subscript>5</Subscript> oxide

A group-theoretical analysis of the magnetic phase of BiMn₂O₅ oxide is performed using the space symmetry group of the compound. Using the projection operator method, we determine the basis functions of the irreducible representation of the space group, which are expressed in terms of the magnetic vector components. This representation can govern two phase transitions from the paramagnetic state to the antiferromagnetic phase with close temperatures and ordering of the spins of manganese ions in two crystallographic positions. It is found from renorm group analysis of these transitions that when these transitions occur as second- order transitions, the electric polarization does not appear in the system because spin fluctuations in this case elevate the symmetry of the system. Polarization appears when at least one of these transitions becomes a first-order transition as a result of spin fluctuations.     

DFT study of BaTiO<Subscript>3</Subscript> (001) surface with O and O<Subscript>2</Subscript> adsorption

Progress of scanning tunneling microscopy (STM) allowed to handle various molecules adsorbed on a given surface. New concepts emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale is thus particularly invaluable. In this work, within the framework of density functional theory (DFT), we present an electronic and structural ab initio study of a BaTiO₃ (001) surface (perovskite structure) in its paraelectric phase. As far as we know the atomic and molecular adsorption of oxygen at surface is then analyzed for the first time in the literature. Relaxation is taken into account for several layers. Its analysis for a depth of at least four layers enables us to conclude that a reasonable approximation for a BaTiO₃ (001) surface is provided with a slab made up of nine plans. The relative stability of two possible terminations is considered. By using a kinetic energy cut off of 400 eV, we found that a surface with BaO termination is more stable than with TiO₂ termination. Consequently, a surface with BaO termination was chosen to adsorb either O atom or O₂ molecule and the corresponding calculations were performed with a coverage 1 on a (1×1) cell. A series of cases with O₂ molecule adsorbed in various geometrical configurations are also analyzed. For O₂, the most favorable adsorption is obtained when the molecule is placed horizontally, with its axis, directed along the Ba-Ba axis and with its centre of gravity located above a Ba atom. The corresponding value of the adsorption energy is -9.70 eV per molecule (-4.85 eV per O atom). The molecule is then rather extended since the O–O distance measures 1.829 ?. By comparison, the adsorption energy of an O atom directly located above a Ba atom is only -3.50 eV. Therefore we are allowed to conclude that the O–O interaction stabilizes atomic adsorption. Also the local densities of states (LDOS) corresponding to various situations are discussed in the present paper. Up to now, we are not aware of experimental data to be compared to our calculated results.     

Dielectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)(Nb<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript>)O<Subscript>3</Subscript> ferroelectric ceramics modified with BaTiO<Subscript>3</Subscript>

Processes of the polarization and repolarization of ferroelectric ceramics based on potassium sodium niobate in the region of infralow frequencies are discussed. The effect aging and subsequent annealing in a strong alternating electric field have on the nonlinearity of the dielectric response of a sample at different temperatures is determined.