Crystallization kinetics of a-Ga5Se95−xSbx

The kinetics studies of a-Ga₅Se_95−xSb_x (x=0, 1, 5, 10) is analyzed by an isothermal and non-isothermal technique. By isothermal technique the analysis of crystallization kinetics is taken at temperatures between the glass transition and crystallization. The activation energy of crystallization (ΔE_c) and order parameter (n) are calculated by fitting the values of extent of crystallization (α) in the Avrami's equation. By non-isothermal technique crystallization kinetics of a-Ga₅Se_95−xSb_x (x=0, 1, 5, 10) with different heating rates of 5, 10, 15 and 20 K/min have been studied by using the Differential Scanning Calorimeter (D.S.C.). The glass transition temperature, crystallization temperature at different heating rates and structural change during glass transition has been determined from an empirical relation. From the heating rate, the dependence of the glass transition and crystallization temperatures, the activation energy for structural relation (Δe_t), the activation energy of crystallization (ΔE_c), and the order parameter (n) are calculated.     

Structural relaxation and rigidity transition in aged and rejuvenated AsxSe100−x glasses

Differential scanning calorimetry (DSC) measurements were performed to investigate the kinetics of the structural relaxation in aged and unaged (rejuvenated) As_xSe_100−x glasses with 0≤x≤40. The activation energy of the glass transition (E_a) of the aged and rejuvenated glasses was determined from the variation of the glass transition temperature (T_g) with the heating rates (β). Significant effect of prolonged aging of the glasses on the values E_a was observed. Evidence of transition from floppy to rigid phase is presented. The observed significant physical aging in samples with composition x<40 indicates the absence of the intermediate phase. The compositional dependence of T_g for aged and rejuvenated data was analyzed using the stochastic agglomeration theory.     

Observation of phase separation in some Se-Te-Sn chalcogenide glasses

Differential scanning calorimeter (DSC) and X-ray diffraction (XRD) techniques were employed here to investigate the glass transition behavior and crystallization kinetics of Se_80−x Te₂₀Sn_x (x=0.0, 2.5 and 5) alloys, which were prepared by the conventional melt quenching method. Two exothermic peaks have been observed in the DSC scans for the samples that contain Sn. Three crystalline phases (Se_7.68Te_0.32, SnSe and SnTe) were classified after heat treating the Se_77.5 Te₂₀Sn_2.5 glass at temperature corresponding to the second crystallization peaks for 3 h. All the characteristic temperatures such as glass transition temperature (T_g), crystallization temperature (T_c) and crystallization peak temperatures (T_p) were found to depend on both the heating rate and the composition. This dependence has been used to deduce the activation energy of the glass transition (E_g), the activation energy of crystallization (E_c), the Avrami exponent (n), thermal stability and the fragility index (F_i).     

Thermal characterization of Se85−xSb15Snx (10≤x≤13) chalcogenide glasses

Results of crystallization kinetics, viscosity, specific heat, thermal stability, and glass forming ability of Se_85−xSb₁₅Sn_x (x=10, 11, 12.5, and 13) chalcogenide glasses, using differential scanning calorimeter (DSC), under non-isothermal condition have been reported and discussed. The variation of the peak temperature of crystallization T_p with the heating rate β has been used to investigate the growth kinetics using Kissinger, Takhor, and Augis-Bennet models. The activation energy of crystallization E_c has been found to increase with Sn content and the crystal growth occurs in one dimension. The increasing trend of E_c is interpreted in terms of enhancement of the degree of cross-linking due to the formation of SnSe_4/2 structural units of energies higher than that of Se-Se and Se-Sb bond energies. The viscosity η against 1/T curves has also been drawn and indicated that the atoms of ternary Se-Sb-Sn glasses required more energy, with the addition of Sn, to complete the transformation from amorphous to crystalline state. The demand for thermal stability has been ensured through the calculations of the enthalpy released ΔH_c during the crystallization process and S-parameter, while the obtained values of the reduced glass transition temperature T_rg and Hurby number H_R have been used to estimate the glass forming ability (GFA). Results reveal that, both thermal stability and GFA enhanced with increasing Sn content and the studied samples were prepared from strong glass-forming liquids. The obtained values for the specific heat difference ΔC_p, between the equilibrium liquid and the glass, have been found to decrease with increasing Sn content and are in support of the results of thermal stability and GFA.     

Short-range order analysis and some physical properties of InxSe1−x glasses

Bulk In_xSe_1−x (with x=5-25 at%) glasses were prepared using the melt-quench technique. Short range order(SRO) was examined by the X-ray diffraction using Cu(k_α) radiation in the wave vector interval 0.28≤k≤6.5 A⁰⁻¹.The SRO parameters have been obtained from the radial distribution function. The inter-atomic distance obtained from the first and second peak are r₁=0.263 and r₂=0.460 nm, which is equivalent In-Se and Se-Se bond length. The fundamental structural unit for the studied glasses is In₂Se₃ pyramid. Using the differential scanning calorimetry (DSC), the crystallization mechanism of In_xSe_1−x chalcogenide glass has been studied. The glass transition activation energy (E_g) is 289±0.3 kj/mol.There is a correlation amongst the glass forming ability, bond strength and the number of lone pair electrons. The utility of the Gibbs-Di Marzio relation was achieved by estimating T_g theoretically.     

Model fitted and model free approaches for crystallization kinetics in Se85Te15-xBix glasses

In this research work, we have described the model-fitted and model free approaches for the study of crystallization kinetics in Se₈₅Te_15-xBi_x chalcogenide glasses. Se₈₅Te_15-xBi_x bulk alloys were synthesized by melt quenching technique. High Resolution X- Ray diffraction (HRXRD) was used to confirm the amorphous nature of prepared alloys. Non-isothermal Differential Scanning Calorimetry (DSC) measurements were done at heating rates of 5, 10, 15, 20 and 25 K/min for crystallization kinetics studies in Se₈₅Te_15-xBi_x glasses. The various characteristic temperatures, such as glass transition (T_g), on-set crystallization (T_c) temperature, peak crystallization temperature (T_p) and melting temperatures (T_m) have been obtained from various DSC thermograms. The activation energies of glass transition (ΔE_t) were calculated by using Kissinger and Moynihan approaches and found to be minimum for Se₈₅Te₁₂Bi₃ chalcogenide glass which indicates that this alloy has maximum probability to jump into a less configurational energy state and has larger stability. The model-free approaches; Kissinger–Akahira–Sunose (KAS), Flynn-Wall-Ozawa (FWO), Tang and Straink (TS) reveal that the activation energy of crystallization varies with crystallization degree and temperature both. This variation shows that amorphous to crystalline phase transformation in Se₈₅Te_15-xBi_x chalcogenide glasses is a complex process with various nucleation and growth mechanisms.     

Glass transition behavior of binary GaxSe100−x (0?x?10) glass systems

The glass transition behavior of glassy Ga_xSe_100−x (x=0, 2.5, 5, 7.5 and 10) systems were investigated using differential scanning calorimetry (DSC). The variation of glass transition temperature, T_g, with Ga concentration has been studied. The value of activation energy of glass transition, E_g, has been found to increase with increase in Ga content. This increase in E_g has been explained in terms of the average heat of atomization for these glasses.     

Kinetic study of non-isothermal crystallization of BixSe100−x chalcogenide glasses

Results of differential thermal analysis (DTA) under non-isothermal conditions on four glasses of Bi_xSe_100−x (x=5, 10, 15 and 25 at%) are reported and discussed. The glass transition temperatures (T_g), the onset crystallization temperatures (T_c) and the peak temperatures of crystallization (T_p) were found to be dependent on the compositions and the heating rates. From the dependence on the heating rates of (T_g) and (T_p), the activation energy for glass transition, E_g, and the activation energy for crystallization, E_c, are calculated and their composition dependence is discussed. The crystalline phases resulting from DTA and scanning electron microscopy (SEM) have been identified using X-ray diffraction. According to the Avrami exponent (n), the results show a one-dimensional growth for the composition Bi₅Se₉₅ and two-dimensional growth for the compositions Bi₁₀Se₉₀, Bi₁₅Se₈₅ and Bi₂₅Se₇₅. The kinetic parameters determined have made it possible to discuss the glass-forming ability.     

Crystallization kinetics and thermal stability in Se85-xTe15Sbx chalcogenide glasses

Crystallization process of Se_85-xTe₁₅Sb_x (x = 2.7, 7.5, 10 and 15 at %) chalcogenide glasses has been studied by using differential scanning calorimetry (DSC) with different heating rates. These glasses are found to have a double glasses transition and overlapped crystalline phases for Se₇₀Te₁₅Sb₁₅ glass while single glasses transition and single crystallization stage for other glasses. Glass transition temperature, T_g, onset crystallization temperature, T_c, and peak crystallization temperature, T_p, are found to be dependent on composition and heating rates. Values of various kinetic parameters such as activation energy of glass transition, E_g, activation energy of crystallization, E_c, Hurby number, H_r, thermal stability, S_p, rate constant, K_p, and Avrami exponent, n, are determined for the present systems. Results indicate that rate of crystallization is dependent on thermal stability and glass-forming ability. Crystallization mechanism occurs in two dimensions for studied compositions. Crystalline phases resulting from DSC and scanning electron microscopy have been identified by using X-ray diffraction.     

Paramagnetic resonance study of Gd(CoxNi1−x)2 compounds

The results of paramagnetic measurements and EPR study on Gd(Co_xNi_1?x)₂ compounds are presented. The data are discussed in the molecular field model. The reciprocal susceptibility follows a Néel-type variation. The thermal variation of g_ef values is analysed considering the Vangsness' relation for temperatures T >T_c. Finally, the EPR data are discussed in the correlation with those obtained from magnetic measurements.     

Phase transition in V1+xTe2 (0.04⩽x⩽0.11)

1T-V_1+xTe₂ was synthesized in a composition range of 0.04?x?0.11. The reversible first order transition was observed by DTA (DSC), powder X-ray diffraction, magnetic susceptibility (χ), and d.c. electrical resistivity (?) measurements. Transition temperature (T_t is 474 K for V_1.04Te₂, and decreases with increasing x. Heat of transition, ΔH was estimated to be as high as 500 cal mol^?1 from the endothermical peak in DSC. The expansion of the c-axis is observed at T_t. χ exhibits a jump at T_t, showing the paramagnetic temperature dependence both below and above T_t. ? measurements show the metallic-like behavior with a slight decrease at T_t. Preliminary electron diffraction examination suggests the formation of a super-structure below T_t.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.     

Magnetic susceptibility anomaly connected with a displacive phase transition in MnAs1−xPx and CrxMn1−xas compounds

With the second order B31 [rlhar2] B8₁ phase transition T_t in MnAs_1-xP_x and Cr_xMn_1-xAs compounds a high-spi low-spin transition occurs simultaneously with a drastic change in the magnetic coupling. An interpolation scheme is proposed which yields C and T_c for each temperature below T_t separately.     

Structure and properties of rare-earth-doped glassy systems

Glasses of composition 90Na₂B₄O₇-(10−x) V₂O₅-xPr₆O₁₁ [x=0, 0.5, 1, 2, 4, 6, 8 and 10 mol%] were prepared by the melt-quenching technique. The density (ρ) and molar volume (V_M) were obtained and were found to increase with increase in Pr₆O₁₁ content. Such behaviour was accounted for by the difference between atomic weight and the atomic radii of the V and Pr ions. The rare-earth ion concentration (N) and ionic radius (r_p) were calculated. The differential thermal analysis (DTA) thermographs were used to determine the glass transition temperature (T_g) and crystallization temperature (T_c), for the examined compositions. Both T_g and T_c values were observed to increase with increased Pr₆O₁₁ content. The glass-forming ability (GFA) was estimated and it was found to increase with increase in the Pr₆O₁₁ content.     

The effect of addition of gallium on the thermal stability and crystallization kinetic parameters of GaxSe100−x glass system

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation for Ga_xSe_100−x glass system (x=0, 2.5 and 5 at%). The kinetic parameters of Ga_xSe_100−x glass system under non-isothermal conditions are analyzed by the model-free and model-fitting models at different constant heating rates (5-50 K/min). A strong heating rate dependence of the effective activation energy of crystallization was observed. The analysis of the present data shows that the effective activation energy of crystallization is not constant but varies with the degree of crystallization and with temperature as well. The crystallization mechanisms examined using the local Avrami exponents indicate that one mechanism (volume nucleation with one-dimensional growth) is responsible for the crystallization process for heating rates 5-50 K/min for Se glass and two mechanisms (volume nucleation with two- and one-dimensional growth) are working simultaneously during the amorphous-crystalline transformation of the Ga_2.5Se_97.5 and Ga₅Se₉₅ glasses (5-50 K/min). The reaction model that may describe crystallization process of all the compositions of Ga_xSe_100−x glass system is Avrami-Erofeev model (g(α)=[−ln(1−α)]^1/n) with n=2 for Se glass. While for Ga_2.5Se_97.5 and Ga₅Se₉₅ glasses, the values of n are equal to 3 and 2 for the heating rates 5-20 and 35-50 K/min, respectively. A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ga_xSe_100−x glass system demonstrates complex multi-step involving several processes.     

Kinetics of glass transition and thermal stability of?Se58Ge42?xPbx?(9≤x≤20) glasses

Se₅₈Ge_42−x Pb _x (9≤x≤20) glasses have been prepared using conventional melt quenching technique. Differential Scanning Calorimetric (DSC) measurements show single glass transition and double crystallization, which indicate the occurrence of phase separation in the samples. The phases present in the samples were identified using XRD. The kinetics of the glass transition has been studied in terms of the variation of glass transition temperature with composition and heating rate. In addition to this, activation energy of the glass transition (E _t ) has also been evaluated and its composition dependence is also investigated. The thermal stability of these glasses has been investigated using various stability criteria: Deiztal first glass criterion, ΔT, Saad and Poulain weighted thermal stability, H′ and the S-parameter. The values of these parameters were obtained using various characteristic temperatures such as the glass transition temperature, T _g , the onset temperature of crystallization, T _c , and the peak crystallization temperature, T _p . The values of stability parameters show that the phase corresponding to second crystallization is more stable than the phase corresponding to first one. The stability in terms of the lead (Pb) content has been determined considering the values of stability parameters of the phase corresponding to second peak. It was found that the stability increases with the lead content.     

Calorimetric studies of the crystallization process in a-Se75S25−xAgx chalcogenide glasses

Calorimetric studies of amorphous Se₇₅S_25−xAg_x (x = 2, 4, 6 and 8) chalcogenide glasses are made at different heating rates (5, 10, 15 and 20 K/min) under non-isothermal condition using Differential scanning calorimetry. The values of glass transition temperature and crystallization temperature are observed to be composition and heating rate dependence. From the heating rate dependence of glass transition temperature and crystallization temperature, the activation energy for structural relaxation (ΔE_t), the activation energy of crystallization (ΔE_c) and the order parameter (n) have been calculated. It is observed that Se₇₅S₁₉Ag₆ has a minimum value of activation energy for structural relaxation (ΔE_t), which indicates that this particular glass has a larger probability to jump to a state of lower configurational energy and higher stability in the glassy region. On the basis of the obtained experimental data the temperature difference (T_c − T_g) is found to be maximum for Se₇₅S₁₉Ag₆, which further indicate that this glass is the thermally most stable in the entire composition range of investigation.     

The effect of indium additive on crystallization kinetics and thermal stability of Se-Te-Sn chalcogenide glasses

The crystallization kinetics of bulk Se_90−xTe₅Sn₅In_x (x=0, 3, 6 and 9) multi-component chalcogenide glasses have been studied using differential scanning calorimetry (DSC) with heating rates 5, 10, 15 and 20 K/min under non-isothermal conditions. Values of various kinetic parameters of crystallization, such as onset crystallization temperature (T_c), peak crystallization temperature (T_p), activation energy of crystallization (E_c), rate constant (K_p), Hruby number (K_gl) and the order parameter (n) have been determined. It was found that activation energy of crystallization and rate constant (K_p) are minimum at 9 at% In. On the basis of the obtained experimental data the temperature difference (T_c−T_g) and K_gl increase with In concentration, which further indicates that 9 at% In glass is most thermally stable in the entire composition range of investigation.     

Dielectric properties and phase transitions of (Pb0.87La0.02Ba0.1)(Zr0.6Sn0.4−xTix)O3 ceramics with compositions near AFE/RFE phase boundary

The electrical properties and phase transition behavior of (Pb_0.87La_0.02Ba_0.1)(Zr_0.6Sn_0.4−xTi_x)O₃ solid solutions (PLBZST, 0.04≤x0.2) were investigated by the X-ray diffraction, permittivity, pyroelectric current, and P-E electric hysterisis loops. As the composition x increased from 0.04 to 0.2, the antiferroelectric ceramics (x≤0.07, AFE) with tetragonal phase changed to the ferroelectric relaxors (RFE, 0.09≤x). AFE ceramics showed a peculiar diffuse phase transition and dielectric relaxation at the low temperature (down to −100 °C) due to a frustration between AFE and FE state. With an increase in composition x, electrically field-induced AFE-FE switching field (E_AFE-FE) and AFE-paraelectric (PE) phase transition temperature (T_c) are depressed in the temperature (T)-Ti composition (x) phase diagram, a FE-AFE-PE triple phase point (T_tr) with the lowest transition temperature occurred at x=0.09. The pyroelectric currents under an application of various external electric field (E) were measured to identify a T-E phase diagram of the PLBZST compound.     

Studying the crystallization behavior of the Se85S10Sb5 chalcogenide semiconducting glass by DSC and X-ray diffraction

Crystallization kinetics of the Se₈₅S₁₀Sb₅ chalcogenide glassy alloy is studied by differential scanning calorimeter (DSC) non-isothermally. The glassy state of the as-prepared sample and the crystalline phases of the heat treated sample are characterized using X-ray diffraction. The glass transition activation energy E_g is found to be 65.2±0.8 kJ/mol and the crystallization activation energies for the first and the second crystallization peaks (E_c1 and E_c2) are found to be 70±0.8 and 85.2±0.8 kJ/mol, respectively. The determined kinetic parameters have made it possible to postulate the type of crystal growth exhibited in the crystallization process. The phases at which the alloy crystallizes after the thermal process have been identified by X-ray diffraction. The diffractogram of the transformed material indicates the presence of nanocrystallites of Sb₂Se₃, Se-S and Se, with a remaining additional amorphous matrix.