纳米碳管阴极的场致发射显示研究

以热化学气相沉积法制备的多壁纳米碳管为场发射材料 ,采用一种简易的喷涂法将其制备为场发射阴极 .首先 ,将纯化后的纳米碳管与乙醇和丙酮溶液 (体积比为 9∶1 )进行混合 ;然后用喷枪将经过超声处理的悬浊液喷涂在具有ITO薄膜的玻璃基底上 ,制备了 30mm× 2 0mm大小的纳米碳管阴极 ,并进行了场致发射特性实验 ,制作了场发射显示板 .该二极结构的场发射开启场强为 3 2V/ μm ,发射电流密度可达 3A/m2 .此显示板具有稳定的发射电流和很高的亮度 ,可望应用于大屏幕显示     

定向多壁碳纳米管薄膜及其场致发射距离敏感特性

研究了定向生长的多壁碳纳米管薄膜场致发射的距离敏感特性,以改进现有场发射传感器中硅及金属针尖的性能。化学气相沉积方法制备的多壁碳纳米管薄膜表现出良好的尖端放电特性,其开启电场可至1.42 V/μm,阈值电场可至2.22 V/μm,通过计算得到的尖端电场增强因子可至4 034以上。随着发射间距的增加,场致发射电流非线性地降低,发射电流对发射间距的最大变化率为0.018 8μA/μm。通过拟合分析发现,场致发射电流随发射间距的变化基本符合Fow ler-N ordhe im关系,该特性可作为碳纳米管场致发射传感器的基本原理用于位移的检测。     

六角排列碳纳米管阵列的场增强因子的计算

通过求解Laplace方程得到六角排列的碳纳米管(CNTs)阵列的管尖端电场强度和场增强因子,具体研究CNTs的自身线度、阵列密度及阵列形状对CNTs的场增强因子的影响.研究结果表明,场增强因子随CNTs长径比的增加而增加,对于长径比一定的CNTs阵列,对应着一个最佳阵列密度,如管长为 6 μm、管径分别为5 nm、13 nm、20 nm的CNTs阵列对应的最佳阵列密度为3.05×1011 cm-2、4.83×1010 cm-2、2.12×1010 cm-2.在相同的阵列密度下,六角排列CNTs阵列的场发射性能要优于四方排列的CNTs阵列.计算得到六角排列CNTs阵列上端面的电势分布曲线.     

场致发射三极管的结构模拟

以场致发射原理为基础，对场致发射三极管器件结构进行有限差分的模拟计算．在保持其它参数不变的条件下，改变尖锥曲率半径、栅孔半径，分析对电场强度、发射电流密度及电子轨迹的影响．针对电子注的发散问题，讨论双聚焦情况．     

First-principles study of the effects of Si doping on geometric and electronic structure of closed carbon nanotube

The effects of Si doping on geometric and electronic structure of closed carbon nanotube （CNT） are studied by, a first-principles method, DMol. It is found that the local density of states at the Fermi level （Er） increases due to the Si-doping and the non-occupied states above the Er go down toward the lower energy range under an external electronic field. In addition, due to the doping of Si, a sub-tip on the CNT cap is formed, which consisted of the Si atom and its neighbor C atoms. From these results it is concluded that Si-doping is beneficial to the CNT field emission properties.     

Field emission study of CNTs on metal tips

The field emission characteristics of multiwalled carbon nanotubes grown on metal tips are studied at various temperatures. It is found that emission current at a given applied electric field increased with the temperature, and the stability of the current did not change. The dependence upon temperature varies quite differently with the metal substrates. This may result from the asymmetry of the CNTs and the interface effect between CNT and underlay.     

碳纳米管场发射显示屏栅极工艺的研究

利用优质云母板作为栅极结构基底材料，结合简单的丝网印刷工艺将导电银浆制作成条状栅极，制作了新型的栅极结构；采用高温分解方法制备了碳纳米管薄膜阴极，制作了三极结构碳纳米管阴极平板显示屏样品。该样品具有良好的场致发射特性以及栅极控制能力。利用这种新型的栅极结构，能够克服整体器件高温封装所带来的技术困难，避免碳纳米管阴极和阳极荧光粉的损伤，实现了稳定可靠的高温封装，具备了制作大面积场致发射器件的潜力。     

场致发射显示驱动时序优化设计

为了优化场致发射显示驱动时序、提高图像显示质量,分析了不同驱动时序对场致发射显示可能出现的运动伪像和大面积闪烁的影响.在分析运动伪像和大面积闪烁视觉感知机理的基础上,利用计算机程序仿真人眼的平滑跟随运动和对光信号的积分过程,估计并比较了不同驱动时序下的运动伪像;通过对光信号随时间变化函数的傅立叶分析计算得到不同驱动时序时的临界闪烁频率.进而提出了一种称作子段的驱动方法,这种驱动方法避免了运动模糊和动态伪轮廓的出现,而且通过提高帧频可以消除大面积闪烁.并分别在分辨率为96×72和96×3×72的场致发射显示屏上实现了该驱动时序.     

镍掺杂单壁碳纳米管阵列储氢的理论研究

采用巨正则蒙特卡罗方法研究常温和中等压强下镍掺杂对单壁碳纳米管阵列物理吸附储氢的影响.计算结果表明,同碱金属掺杂相比,过渡金属原子的d轨道与碳原子的p轨道之间发生的轨道杂化,能更有效地提高镍掺杂SWCNTA的储氢效果.     

Well-aligned carbon nanotube array membrane synthesized in porous alumina template by chemical vapor deposition

A new simple approach was devetoped for preparing wetl-aligned and monodispersed carbon nanotube (CNT) array membrane within the cylindrical pores of anodic aluminum oxide (AAO) template by chemical vapor deposition (CVD). Acetylene and hydrogen were used in the CVD process with Fe-catalyzer at 700°C under 250 Pa. Scanning etectron microscope (SEM) and transmission etectron microscope (TEM) were employed to characterize the resulting highly-oriented uniform hollow tube array which had a diameter of about 250 nm, a tube density of 5.3x10⁸ cm² and a length of about 60 μm. The length and diameter of the tubes depend on the thickness and pore diameter of the template. The growth properties of the CNT array film can be achieved by controlling the structure of the template, the particle size of Fe-catalyzer, the temperature in the reactor, the flow ratio and the deposition time. The highly-oriented and uniform CNT array membrane fabricated by this simple method is very much useful in a variety of applications.     

Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

A corona discharge phasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array ,The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom.The characterization results by the scanning electron microscopy,transmission electron microscopy,energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 μm, and the carbon anotubes are mainly restrained within the channels of templates.     

高亮度碳纳米管背光源的制备及特性研究

利用酸化及球磨工艺对碳纳米管(Carbon Nanotubes,CNTs)进行表面改性及分散处理,通过丝网印刷技术制备碳纳米管阴极并真空封装碳纳米管背光源原型器件.透射电镜(TEM)及扫描电镜(SEM)分析表明,酸化及球磨处理后的碳纳米管表面产生管壁缺陷并分散均匀,有利于改善碳纳米管场发射性能.通过器件性能测试,亮度高达到5 000 cd·m-2,稳定发射35 h,发射电流无明显衰减.     

Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

Carbon nanotube array plays an important role in the area of nanomaterials due to its potential applications, e.g. as field emitter in flat panel display[1,2] and as template for synthesizing arrays of other important nanomaterials[3]. Anodic aluminum oxide (AAO) template possesses an ordered porous structure that is formed through self-or- ganization during anodization[4,5], and is widely used to synthesize one-dimensional nanomaterial arrays[6]. Carbon nanotubes are usually assembled into t…     

活性碳/碳纳米管掺杂材料的制备及其有机双层电容器电极性能

中温煤沥青添加乙酸钴后进行热缩聚反应,取热缩聚产物中的吡啶不溶物为原料,添加不同比例的含硼化合物,以 KOH为活化剂进行化学活化,制备出四种不同结构的活性碳/碳纳米管掺杂材料(AC/CNT),并考察了所制备材料的结构性能及有机电容器电极性能.结果表明,AC/CNT材料中含有结晶度较高的类石墨微晶结构碳,随着硼化合物添加量的增加,产物中碳纳米管的含量呈增多的趋势,石墨层间距d(002)呈减小趋势.所制备材料具有良好的有机电容器电极性能,其中AC/CNT-1样品的质量比电容最大,为125 F/g; AC/CNT-4的质量比电容最小,为89.9 F/g,但具有最高的体积比电容,52.9 F/cm3.     

一种基于纳米碳管的常开型后栅极场致发射显示板

提出了一种常开型后栅极场致发射显示板及其工作原理．该显示板直接利用阳极使阴极产生场致电子发射,而通过埋在阴极之下的栅极上施加低于阴极电压的电压来阻止阴极产生场致电子发射,从而来调制显示所需图像．文中采用有限元法对该场致发射器件的电场强度分布进行了模拟计算,并研究了该器件中阴极的发射特性．计算结果表明在该场致发射显示板中,阴极发射均匀性好,发射面积大,从理论上证明了该常开型后栅极场致发射显示板工作原理的可行性．     

碳分子线（C2-C4）在单壁碳纳米管中结构的第一性原理研究

采用第一性原理的密度泛函理论,对碳分子线团簇（C2～C4）及其在单壁碳纳米管（SWCNT）（4,4）,（5,5）中的几何结构性质进行了计算模拟．发现碳分子线（C2-C4）在不同直径的单壁碳纳米管中的键长是不同的,结果将对碳纳米管内部的力学性质研究提供帮助．     

单根碳纳米管的低温电输运性质

报道了单根碳纳米管的低温电输运测量结果,特别关注了由于碳纳米管在长度方向的尺寸较小时产生的库仑阻塞性质,碳纳米管的低温电输运出现了零偏置反常和库仑振荡。因此碳纳米管在小的尺寸和低温时不仅出现能量量子化而且可以出现电荷量子化-量子点的行为。     

Voltammetric Response of Epinephrine at Carbon Nanotube Modified Glassy Carbon Electrode and Activated Glassy Carbon Electrode

0Introduction Epinephrine(EP)isanimportantcate cholamineneurotransmitterinthemammaliancentralnervoussystem,whichissecretedbythesu prarenalglandalongwithnorepinephrine.Itisgen erallyusedtotreathypertension,bronchialasthma,organicheartdisease,andincardiacsurgeryand myocardialinfarction[1].VariousmethodshavebeendevelopedforEPstudy,suchascapillaryelectro phoresis(CE)[2],highperformanceliquidchroma tography(HPLC)andflowinjectionanalysis(FIA)[3].Numerousobservationsontheelectro chemicalbehavio…     

二维、三维模型碳纳米管场发射场强计算的比较研究

在计算碳纳米管场发射显示器中电场强度时,为了提高计算效率,许多资料将三维空间的场发射简化为二维模型进行计算,为了比较分析使用二维模型和三维模型计算结果的差异,建立了二维模型单根碳纳米管、三维模型单根碳纳米管和单碳纳米墙3个模型,应用Ansoft Maxwell有限元数值仿真软件进行了仿真,计算结果表明:二维碳纳米管场发射模型的仿真结果代表的三维空间实际情况为碳纳米墙场发射,而不是真正的三维空间碳纳米管场发射。对于单根碳纳米管,用二维模型计算的碳纳米管尖端电场强度仅为三维空间碳纳米管尖端电场强度的1／4。