Strengthening effects of various grain boundaries with nano-spacing as barriers of dislocation motion from molecular dynamics simulations

Strengthening in metals is traditionally achieved through the controlled creation of various grain boundaries (GBs), such as low-angle GBs, high-angle GBs, and twin boundaries (TBs). In the present study, a series of large-scale molecular dynamics simulations with spherical nanoindentation and carefully designed model were conducted to investigate and compare the strengthening effects of various GBs with nano-spacing as barriers of dislocation motion. Simulation results showed that high-angle twist GBs and TBs are similar barriers and low-angle twist GBs are less effective in obstructing dislocation motion. Corresponding atomistic mechanisms were also given. At a certain indentation depth, dislocation transmission and dislocation nucleation from the other side of boundaries were observed for low-angle twist GBs, whereas dislocations were completely blocked by high-angle twist GBs and TBs at the same indentation depth. The current findings should provide insights for comprehensive understanding of the strengthening effects of various GBs at nanoscale.     

Grain boundary structure of nanocrystalline Cu processed by cryomilling

The microstructures of cryogenically ball-milled Cu were investigated by high-resolution electron microscopy. It was found that the grain-size reduction is a dislocation-controlled continuous process which consists of the formation of small-angle grain boundaries (GBs), a gradual increase in misorientations as a result of accumulation of more dislocations and, finally, the formation of large-angle GBs. The GBs were generally curved, wavy or faceted, and heavily strained, which are typical characteristics of nanostructured materials. In addition, extrinsic dislocations were found in many GBs, indicating that most are in a high-energy non-equilibrium configuration, which is consistent with observations in equal-channel angular pressing processed Cu, Ni, and Al-Mg, repetitive corrugation and straightening processed Cu and room-temperature ball-milled Cu. These results support a still-disputed concept that GBs in nanostructured metals processed by severe plastic deformation are mostly in non-equilibrium states.     

Microstructure and composition analysis of nanostructured materials using HREM and FEG-TEM

The microstructure in nanostructured (NS) materials synthesized by different methods have been characterized by electron microscopy methods. NS-Pd was prepared by inert-gas condensation and in situ compacting method (IGCC), NS-alloys by amorphous crystallization method (ACM) and NS-Cu and Cu100-xFe(x) alloy by mechanical alloying (MA) methods. The experimental results have revealed that different preparation techniques lead to different microstructures. The grain boundaries have ordered and disordered structures and high density of defects were frequently detected in NS-materials synthesized by IGCC and MA. For the NS-alloys produced by ACM, however, the structures of GBs are similar to those in coarse-grained materials and the grains have nearly perfect crystal structure. For immiscible systems, a supersaturated Fe-Cu solid solution can be obtained by MA, but it is difficult using IGCC.     

Structure and stability of Σ3 grain boundaries in face centered cubic metals

Σ3 grain boundaries form as a result of either growth twinning or deformation twinning in face centered cubic (fcc) metals and play a crucial role in determining the mechanical and electrical properties and microstructural stability. We studied the structure and stability of Σ3 grain boundaries (GBs) in fcc metals by using topological analysis and atomistic simulations. Atomistic simulations were performed for Cu and Al with empirical interatomic potentials to reveal the influence of stacking fault energy on the morphology of the twinned grains. Three sets of tilt Σ3 GBs were studied with respect to the tilt axis parallel to ?111?, ?112?, and ?110?, respectively. We showed that Σ3{111} and Σ3{112} GBs are thermodynamically stable and the others will dissociate into terraced interfaces regardless of the stacking fault energy. The morphology of the nano-twinned grains in Cu is predicted from the above analysis and found to match with experiments.     

Effect of copassivation of Cl and Cu on CdTe grain boundaries

Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (GBs) in polycrystalline CdTe and the effects of copassivation of elements with far distinct electronegativities. Of the two types of GBs studied in this Letter, we find that the Cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as Cl and Cu, whereas the Te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of Cl and Cu. Our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the GBs.     

Interaction of Point Defects with Grain Boundaries in fcc Metals

Structures of several symmetrical tilt grain boundaries (GBs) with different tilt axes in Cu and Al and their interaction with vacancies and interstitials are studied using atomistic computer simulations with embedded-atom potentials. The lowest defect formation energy in a GB is found to correlate with the GB energy in both Cu and Al. Importantly, vacancies and self-interstitials in GBs have comparable formation energies, suggesting that both defects are equally important for GB diffusion and other properties. Vacancies in GBs can be either localized at certain sites or be delocalized over several sites. Some GB sites do not support a stable vacancy at all. Self-interstitial atoms can occupy relatively open interatomic positions, form split dumbbell configurations, or give rise to highly delocalized displacement zones. These structural forms of point defects have been observed across the whole set of twelve GBs in Cu and six GBs in Al studied in this paper as well as in our previous work [Interface Science 11, 131–148 (2003)]. It is suggested that these structural forms are general to all GBs in fcc metals. They can be explained by the existence of internal stresses and alternating tension and compression regions in the GB core.     

Twin Boundaries in Zinc Oxide with Additions of Gallium Oxide

Twin boundaries (TBs) in ZnO sintered with small additions of Ga₂O₃ have been characterized with advanced methods of transmission electron microscopy (TEM). The TBs and accompanying inversion domain boundaries are on {011¯3} planes of ZnO. The Ga content of the TB corresponds to an effectively half occupied {011¯3} plane determined from compositional maps calculated from electron spectroscopic images using electron filtering TEM. The structure of the TBs were investigated by high-resolution TEM, and images of focus series were used to reconstruct the complex electron wave. Simulated electron waves based on structure models of the TB were quantitatively compared with the reconstructed wave to identify and to refine atom positions. The twins can be considered to be created by a mirror operation on a {011¯3} plane of ZnO, and two alternating closed-packed polyhedral clusters of oxygen ions can be identified as building units of the TB structure. Unit 1 is occupied with Zn²⁺ by simply continuing ZnO₄ tetrahedra of the same type from both crystals to the TB. Using arguments of local charge balance unit 2 can only be occupied with the trivalent Ga³⁺ ion. The Ga³⁺ position was refined with high precision (±5 pm), and the resulting polyhedron is a GaO₅ square pyramid. The pyramids form densely occupied columns parallel to the twin axis [21¯1¯0]. The analysis of the TB structure yields a fractional occupancy of the boundary plane by Ga of 0.5, which is in good agreement with the result of the chemical composition measurement with energy filtered TEM.     

Direct method for determining the segregation in silver-copper solid solutions not prone to brittle breakage of grain boundaries

A new method is proposed for measuring the chemical composition of grain boundaries (GBs) in copper-based alloys not prone to embrittlement of boundaries. This method is based on embrittlement of copper GBs by bismuth penetrating from the gas phase of bismuth telluride (Bi₂Te₃). Chemical analysis of the GB surface is performed via Auger-electron spectroscopy. The GB composition is measured in a solid solution of silver (its volume concentration is 1.4 at %) and copper. The segregation annealing temperature is 570°C. The silver concentration across the broken surface of the GB (its thickness is five to ten atomic layers) is 4.7 at %. Therefore, the ratio between silver concentrations within the GB and the grain volume (the enrichment coefficient) is approximately 3.5.     

Investigation of local electronic transport and surface potential distribution of Cu(In,Ga)Se2 thin-films

Local current mapping and surface potential distributions on polycrystalline Cu(In,Ga)Se₂ (CIGS) films are investigated by conductive atomic force microscopy and Kelvin probe force microscopy. The two kinds of samples fabricated by co-evaporation had extremely different conversion efficiencies of 10% and 0.2% for stoichiometric and Cu- and Se-deficient compositions, respectively. We examined the microscopic reasons for the differences in the local electrical properties. Current mapping and current–voltage behaviors were measured at intragrain regions (IGs) and grain boundaries (GBs). Electronic transport between a Pt scanning probe and the CIGS layer is explained by the Schottky conduction mechanism. The surface potential distribution shows an intriguing relation with topological variation, inferring that a local built-in potential is possibly formed on positively charged GBs. The surface potential is about 100 mV, which shows energy band bending near GBs in the films. Exciton separation near GBs is explained by the bending of the conduction and valence bands, which is sensitive to compositional and structural inhomogeneities.     

Crossover between channeling and pinning at twin boundaries in YBa2Cu3O7 thin films

The critical current (Jc) of highly twinned YBa2Cu3O7 films has been measured as a function of temperature, magnetic field, and angle. For much of the parameter space we observe a strong suppression of Jc for fields in the twin boundary (TB) directions; this is quantitatively modeled as flux-cutting-mediated vortex channeling. For certain temperatures and fields a crossover occurs to a regime in which channeling is blocked and the TBs act as planar pinning centers so that TB pinning enhances the overall Jc. In this regime, intrinsic pinning along the TBs is comparable to that between the twins.     

Cyclic deformation and fatigue cracking behaviour of polycrystalline Cu,Cu–10 wt% Zn and Cu–32 wt% Zn

The cyclic deformation behaviour of polycrystalline Cu, Cu–10 wt% Zn and Cu–32 wt% Zn was systematically investigated in the plastic strain amplitude range of 1 × 10^?4–4 × 10^?3. The differences in the cyclic stress–strain (CSS) responses and fatigue cracking behaviour between Cu, Cu–10 wt% Zn and Cu–32 wt% Zn were compared. It was found that the occurrence of a cyclic saturation for Cu–10 wt% Zn and Cu–32 wt% Zn strongly depends on the applied strain amplitude, whereas polycrystalline Cu always displays cyclic saturation. Surface deformation morphologies were analyzed by scanning electron microscopy (SEM). One of the major features observed is that the slip bands become increasingly homogenous with Zn addition. The fatigue cracks were found to frequently nucleate along the annealing twin boundaries (TBs) in Cu–10 wt% Zn and Cu–32 wt% Zn, but not in polycrystalline Cu. Based on these experimental results, the cyclic deformation response and fatigue cracking behaviour are discussed, and a developed TB cracking mechanism is proposed to explain the difference in fatigue cracking mechanisms in Cu, Cu–10 wt% Zn and Cu–32 wt% Zn.     

Atomistic simulation study on twin orientation and spacing distribution effects on nanotwinned Cu films

Affected by twin orientation and spacing distribution, different deformation and failure mechanisms of nanotwinned (NT) Cu films are discovered. For films with the same twin spacing, transition from brittle to ductile and ductile to localized necking with the increase of the slanted angle of twin boundary (TB) from 0° to 90° is examined. Two dominant slip mechanisms: (1) slip intersecting with the TBs; (2) slip parallel to the TBs can uncover the transition mechanisms with consideration of twin orientation. To maintain both relatively high strength and good ductility, the slanted angle can be set close to the ductile to localized necking transition border. Besides, the stress–strain curves obtained in this article show that the mechanical responses on both sides of the turning point 45° are asymmetric. On the other hand, the twin spacing distributions affect the ductility of NT Cu films and have almost no contribution to strengthening. The strength of the NT Cu films mainly depends on the twin density. NT Cu films with different twin spacing have worse ductility than equal twin spacing films due to the local twin spacing asymmetry. The failures can be predicted appearing at TBs adjacent to large twin spacing regions, and the failure propagation direction can also be predicted by knowing the obtuse angle decided by stacking faults and TBs.     

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Mass transport and solid-state reactions in nanocrystalline thin films are reviewed. It is illustrated that diffusion along different grain boundaries (GBs) can have important effects on the overall intermixing process between two pure films. These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities. First the atoms migrate along fast GBs and accumulate at the film surface. These accumulated atoms form a secondary diffusion source for back diffusion along slow boundaries. Thus the different GBs of the thin films can be gradually filled up with the diffusing atoms and composition depth profiles reflect the result of these processes. Similar processes can be observed in binary systems with intermetallic layers: instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase grows by the motion of its interfaces perpendicular to the GBs. Thus, the entire layer of the pure parent films can be consumed by this GB diffusion-induced solid-state reaction (GBDIREAC), and a fully homogeneous product layer can be obtained.     

Grain growth and collective migration of grain boundaries during plastic deformation of nanocrystalline materials

A theoretical model is proposed for the collective migration of two neighboring grain boundaries (GBs) in a nanocrystalline material under applied elastic stress. By analyzing the change in the energy of the system, it is shown that GBs can remain immobile or migrate toward each other depending on the values of the applied shear stress and misorientation angles. The process of GB migration can proceed either in a stable regime, wherein the GBs occupy equilibrium positions corresponding to a minimum of the energy of the system under relatively small applied stress, or in an unstable regime, wherein the motion of GBs under relatively high stress is accompanied by a continuous decrease in the system energy and becomes uncontrollable. The stable migration of GBs leads to a decrease of the grain bounded by them at the cost of growth of the neighbor grains and can result in complete or partial annihilation of the GBs and the collapse of this grain. Unstable migration leads either to annihilation of GBs or to passage of them through each other, which can be considered as the disappearance of the grain and nucleation and growth of a new grain.     

Atomic structure and electronic properties of the ∑37(610) and ∑29(520) [001] tilt grain boundaries in Ge

400 kV high resolution electron microscopy (HREM), deep level transient spectroscopy (DLTS) and steady state electrical measurements have been applied to 37(610) and 29(520) [001] tilt grain boundaries (GBs) in germanium bicrystals. The atomic boundary structures were revealed by experimental HREM images taken under different defocus conditions. Later, structure models were refined by means of a trial-and-error method applying alternatively the image simulation and the molecular static calculation of relaxed structures. The structures were shown to be consistent with the modified structural unit model. Although the structures are different for the two GBs studied, DLTS data and steady state measurements were found to be quite similar for both GBs. Thus, the results point to the extrinsic origin of localized deep states at the GBs. The analysis of DLTS spectra indicates the impurity segregation at the boundary, e.g., the formation of vacancy-type oxygen complexes of a donor-like state at E _c-0.21 eV, which results in the fluctuation of the potential barrier. Defects in the GBs—like facets, atomic steps and secondary grain boundary dislocations—which are characteristic of both boundaries can act as nuclei to the impurity segregation.Presented at the Workshop on High-Voltage and High-Resolution Electron Microscopy, February 21–24, 1994, Stuttgart, Germany.     

Shear-strain induced structural relaxation of Cu Σ3 [110](112) symmetric tilt grain boundary: The role of foreign atoms and temperature

Grain boundaries (GBs) relaxation is a promising and effective strategy to improving GB stability or stabilizing nanocrystalline metals. However, previous studies mainly focused on nanocrystalline pure metals and GB behaviors therein, without considering the role of foreign atoms such as impurity or alloying atoms in GB relaxation. In this work, the shear-strain induced structural relaxation of pure Cu Σ3 [110](112) symmetric tilt GBs (STGBs), and the effects of foreign elements (Fe and Ni) and temperature on the GB relaxation were investigated in detail by molecular dynamics method. The results show that shear strain can trigger the structural relaxation of pure, Fe- and Ni-containing Cu GBs by the emission of Shockley partial dislocations from Cu GBs. Both Fe and Ni have impediment effects on the shear-strain induced GB relaxation, though the content of Fe or Ni atom (0.00165 at.%) is quite low in the GB model. The temperature cannot trigger GB relaxation independently within the considered temperature range, but play a positive role in the shear-strain induced structural relaxations of pure, Fe- and Ni-containing Cu Σ3 [110](112) STGBs. Our work might gain new insights into the mechanically induced GB relaxation in nanocrystalline copper and could be beneficial for improving the stability of Cu GBs.     

Preferential penetration path of gallium into grain boundary in practical aluminium alloy

The preferential penetration of a liquid metal along grain boundaries (GBs) in polycrystalline metals is a well-known phenomenon. Gallium-decorated GB networks in rolled aluminium alloys have been visualized three-dimensionally using the high-resolution synchrotron radiation computer tomography (SRCT). The distribution of gallium concentration along GBs was measured using X-ray absorption. Statistical correction for blurring was performed to raise accuracy of the measurement, and then compared with orientation mapping by the SEM/EBSP method on the surface of a tomographic specimen. The pancake-like grain microstructure formed by a rolling process causes the anisotropy of penetration direction. Although the gallium penetrated into high-angle GBs, all of the high-angle GBs are not necessarily decorated by the gallium. The reason for this may be explained by considering geometrically possible penetration paths that seem to be dependent on local grain arrangement and GB structure through each path. The dependence of the gallium concentration on the rotation axis of misorientation has been found along the high-angle GBs. Especially, GBs with a specific misorientation (〈221〉 as a misorientation axis) showed high gallium concentration.     

铜（001）扭转晶界能的原子级计算

采用改进分析型嵌入原子法（MAEAM）计算了铜（001）未松弛扭转晶界的晶界能。结果表明，除扭转角为（完整晶体）时的能量为零外，对应和扭转角为36.87°时的晶界能为最小，和实验结果一致；对于其它扭转角，包括很小的扭转角1.94°，晶界能几乎为一常数；均匀膨胀和垂直于晶界面的膨胀都会使晶界能明显降低，尤其是后者。     

Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy

P-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyanina-tocopper (F₁₆CuPc) polycrystalline films were investigated by Kelvin probe force microscopy (KPFM). Topographic and corresponding surface potential images are obtained simultaneously. Surface potential images are related with the local work function of crystalline facets and potential barriers at the grain boundaries (GBs) in organic semiconductors. Based on the spatial distribution of surface potential at GBs, donor- and acceptor-like trapping states in the grain boundaries (GBs) of p-CuPc and n-F₁₆CuPc films are confirmed respectively. In view of spatial energy spectrum in micro-scale provided by KPFM, it is going to be a powerful tool to characterize the local electronic properties of organic semiconductors.