Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

Magneto transport on the surface of a topological insulator spin valve

The effects of the magnetization on the transport properties of a ferromagnet/barrier/ferromagnet spin valve fabricated with a topological insulator are studied. We consider two types of junctions, (i) an F₁/normal barrier (NB)/F₂ junction and (ii) an F₁/magnetic barrier (FB)/F₂ junction. The junctions in both cases lie in the xy-plane with the magnetizations in both ferromagnetic regions, F₁ and F₂ aligned in the z-direction. The charge carriers in the topological insulator have a Dirac like energy spectrum of a massive relativistic particle with the magnetization M playing the role of the mass. The gap opening is a special magneto feature of topological insulators. In an anti parallel alignment of the two magnetizations, the mass of the carriers is negative in the region where M is in the negative direction. The negative mass leads the behaviors of the magneto transport properties and the tunneling magneto resistance of these junctions to be quite different from those of graphene-based spin values.     

Magnetically confined states and transport property on the surface of a topological insulator

We study the electronic structure and transport for a quasi-one-dimensional channel constructed via two ferromagnetic (FM) stripes on the surface of a three-dimensional (3D) topological insulator (TI) in parallel (P) or antiparallel (AP) magnetization configuration along the vertical z$z$-direction. We demonstrate that the confined states which are localized inside the channel always exist due to the magnetic potential confinement. Interestingly, the channel is metallic because of the existence of a topologically protected gapless chiral edge mode in the case of AP configuration. The asymmetric spatial-distribution of both electron probability density and in-plane spin polarization for the confined states implies that in the case of P configuration there exists a chiral state near the channel edge owing to the Hamiltonian inversion symmetry broken in real space, while the distributions in AP case are always symmetry since the inversion symmetry is still kept. Furthermore, the transmission probability and the spatial-dependent distributions of charge and spin along a narrow–wide–narrow channel on the surface with P configuration confinement are also calculated, from which a fully in-plane spin-polarized electron output is achieved. Along with the mathematical analysis we provide an intuitive, topological understanding of these effects.     

Superconducting proximity effect and majorana fermions at the surface of a topological insulator

We study the proximity effect between an s-wave superconductor and the surface states of a strong topological insulator. The resulting two-dimensional state resembles a spinless px+ipy superconductor, but does not break time reversal symmetry. This state supports Majorana bound states at vortices. We show that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.     

Charge transport and shot noise on the surface of a topological insulator with a magnetic modulation

In this paper, we investigate the transport features and the Fano factor of Dirac electrons on the surface of a three-dimensional topological insulator with a magnetic modulation. We consider a hard wall bounding condition on the edge of the topological insulator, which implies that a surface state of the topological insulator is insulating. We find that a valley of conductivity at the Dirac point is associated with a Fano factor peak, and more interestingly, this topological metal changes from insulating to metallic by controlling the effective exchange field.     

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.     

Thin-film magnetization dynamics on the surface of a topological insulator

We theoretically study the magnetization dynamics of a thin ferromagnetic film exchange coupled with a surface of a strong three-dimensional topological insulator. We focus on the role of electronic zero modes imprinted by domain walls (DWs) or other topological textures in the magnetic film. Thermodynamically reciprocal hydrodynamic equations of motion are derived for the DW responding to electronic spin torques, on the one hand, and fictitious electromotive forces in the electronic chiral mode fomented by the DW, on the other. An experimental realization illustrating this physics is proposed based on a ferromagnetic strip, which cuts the topological insulator surface into two gapless regions. In the presence of a ferromagnetic DW, a chiral mode transverse to the magnetic strip acts as a dissipative interconnect, which is itself a dynamic object that controls (and, inversely, responds to) the magnetization dynamics.     

Carrier mediated ferromagnetism on the surface of a topological insulator

We study the effect of magnetic doping at the surface of a three dimensional topological insulator (TI) on emergence of ferromagnetic ordering at the TI-surface assuming the exchange coupling between the Dirac fermions and the dilute magnetic ions. We show that this coupling results in an uniaxial magnetic anisotropy with out-of-plane magnetization direction. It is found that the system under consideration is unstable with respect to a spontaneous uniform magnetization along the easy axis, which is accompanied by opening a gap in a spectrum of the Dirac surface states. In the framework of a mean-field approach, we study the possibility of ferromagnetic order on the magnetically doped surface of TI at different temperatures and positions of the chemical potential.     

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.     

Quantum Hall superfluids in topological insulator thin films

Three-dimensional topological insulators have protected Dirac-cone surface states. In this Letter we argue that gapped excitonic superfluids with spontaneous coherence between top and bottom surfaces can occur in the topological insulator (TI)-thin-film quantum Hall regime. We find that the large dielectric constants of TI materials increase the layer separation range over which coherence survives and decrease the superfluid sound velocity, but have little influence on the superfluid density or on the charge gap. The coherent state at total Landau-level filling factor νT=0 is predicted to be free of edge modes, qualitatively altering its transport phenomenology compared to the widely studied case of νT=1 in GaAs double-quantum wells.     

Interface-induced states at the boundary between a 3D topological insulator and a normal insulator

We show that, when a three-dimensional (3D) narrow-gap semiconductor with inverted band gap (“topological insulator,” TI) is attached to a 3D wide-gap semiconductor with non-inverted band gap (“normal insulator,” NI), two types of bound electron states having different spatial distributions and spin textures arise at the TI/NI interface. Namely, the gapless (“topological”) bound state can be accompanied by the emergence of the gapped (“ordinary”) bound state. We describe these states in the framework of the envelope function method using a variational approach for the energy functional; their existence hinges on the ambivalent character of the constraint for the envelope functions that correspond to the “open” or “natural” boundary conditions at the interface. The properties of the ordinary state strongly depend on the effective interface potential, while the topological state is insensitive to the interface potential variation.     

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

The electronic structure of Bi(2)Se(3) is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultrahigh-vacuum conditions, can be overcome via in situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab initio slab calculations reveal that these Rashba states are derived from 5-quintuple-layer quantum-well states. While the K-induced potential gradient enhances the spin splitting, this may be present on pristine surfaces due to the symmetry breaking of the vacuum-solid interface.     

Local density of states in a vortex at the surface of a topological insulator in a magnetic field

The European Physical Journal B - We analyse Lieb–kagomé model, a three-band model with contact points showing particular examples of the merging of Dirac contact points. We prove that...     

Surface waves at the interface between a dielectric and a topological insulator

Surface waves that propagate along the interface between an isotropic linear or nonlinear (of the Kerr type) dielectric and a topological insulator have been studied theoretically. A dispersion relation for surface waves, which are represented by superpositions of TE and TM waves, has been obtained. This hybridization occurs because, upon passage through the interface, the polarization of a surface wave changes, which is caused by an induced surface current (which is transverse to the electric field vector of the wave). The surface current of this kind is characteristic of topological insulators. Expressions for the energy flux transferred by a surface wave have been given.     

Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures

We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k ? p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.     

Momentum and spin filtering of electrons on the surface of a topological insulator

We study theoretically electron tunneling through planar magnetic barrier arrays on the surface of a three-dimensional topological insulator. Interestingly, the transmission displays a collimation behavior at some specific incident angles. This feature provides us a new way to construct a momentum and spin filter in topological insulators.     

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat（ is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrie the transport processes can be divided into three kinds： the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the currenl voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltag and then a large peak-to-valley current ratio can be obtained.     

Electric and thermal transport properties of topological insulator candidate LiMgBi

We report the transport properties of a topological insulator candidate, LiMgBi. The electric resistivity of the title compound exhibits a metal-to-semiconductor-like transition at around 160 K and tends to saturation below 50 K. At low temperatures, the magnetoresistance is up to ~260% at 9 T and a clear weak antilocalization effect is observed in the low magnetic-field region. The Hall measurement reveals that LiMgBi is a multiband system, where hole-type carriers (n_h~10¹⁸ cm^-3) play a major role in the transport process. Remarkably, LiMgBi possess a large Seebeck coefficient (~440 μV/K) and a moderate thermal conductivity at room temperature, which indicate that LiMgBi is a promising candidate in thermoelectric applications.     

Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

Multi-channel Bi₂Se₃ thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi₂Se₃ grew on amorphous Al₂O₃ even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi₂Se₃ channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films.     

Nonlinear optical probe of tunable surface electrons on a topological insulator

We use ultrafast laser pulses to experimentally demonstrate that the second-order optical response of bulk single crystals of the topological insulator Bi(2)Se(3) is sensitive to its surface electrons. By performing surface doping dependence measurements as a function of photon polarization and sample orientation we show that second harmonic generation can simultaneously probe both the surface crystalline structure and the surface charge of Bi(2)Se(3). Furthermore, we find that second harmonic generation using circularly polarized photons reveals the time-reversal symmetry properties of the system and is surprisingly robust against surface charging, which makes it a promising tool for spectroscopic studies of topological surfaces and buried interfaces.