Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasers

A new technique of dual-beam laser ablation of fused silica by multiwavelength excitation process using a 248-nm KrF excimer laser (ablation beam) coupled with a 157-nm F₂ laser (excitation beam) in dry nitrogen atmosphere is reported. The dual-beam laser ablation greatly reduced debris deposition and, thus, significantly improved the ablation quality compared with single-beam ablation of the KrF laser. High-quality ablation can be achieved at the delay times of KrF excimer laser irradiation shorter than 10 ns due to a large excited-state absorption. The ablation rate can reach up to 80 nm/pulse at the fluence of 4.0 J/cm² for the 248-nm laser and 60 mJ/cm² for the F₂ laser. The ablation threshold and effective absorption coefficient of KrF excimer laser are estimated to be 1.4 J/cm² and 1.2᎒⁵ cm^-1, respectively.     

Comparative studies of absorptance behaviour of alkaline-earth fluorides at 193 nm and 157 nm

Absorptance losses in MgF₂, CaF₂ and BaF₂ during 193-nm (DUV) and 157-nm (VUV) irradiation are investigated by employing a high-resolution laser calorimetric technique which allows the determination of both single- and two-photon absorptance at energy densities up to 110 mJ/cm². A strong wavelength dependence of the DUV and VUV absorption characteristics is observed: while effective two-photon absorption takes place at 193 nm, either no similar effect at all (in the case of BaF₂) or only a very minor effect (CaF₂) is observed at 157 nm. A first explanation for this absorption behaviour is given, implying the energetic band structure of CaF₂. In addition it is shown that, due to the strong nonlinear dependency, above a critical energy density the absorptance at 193 nm can exceed the absorptance at 157 nm. Furthermore, different single- and two-photon absorption coefficients are determined for different CaF₂ samples at 193 nm, indicating a two-step absorption mechanism. In addition, laser-induced aging is found in a MgF₂ sample at 193 nm, but not at 157 nm. Received: 21 June 2001 / Revised version: 2 November 2001 / Published online: 7 February 2002     

Influence of laser fluence and irradiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation process

A collinear irradiation system of F₂ and KrF excimer lasers for high-quality and high-efficiency ablation of hard materials by the F₂ and KrF excimer lasers’ multi-wavelength excitation process has been developed. This system achieves well-defined micropatterning of fused silica with little thermal influence and little debris deposition. In addition, the dependence of ablation rate on various conditions such as laser fluence, irradiation timing of each laser beam, and pulse number is examined to investigate the role of the F₂ laser in this process. The multi-wavelength excitation effect is strongly affected by the irradiation timing, and an extremely high ablation rate of over 30 nm/pulse is obtained between -10 ns and 10 ns of the delay time of F₂ laser irradiation. The KrF excimer laser ablation threshold decreases and its effective absorption coefficient increases with increasing F₂ laser fluence. Moreover, the ablation rate shows a linear increase with the logarithm of KrF excimer laser fluence when the F₂ laser is simultaneously irradiated, while single KrF excimer laser ablation shows a nonlinear increase. The ablation mechanism is discussed based on these results. Received: 16 July 2001 / Accepted: 27 July 2001 / Published online: 2 October 2001     

Fabrication of submicron gratings in fused silica by F<Subscript>2</Subscript>-laser ablation

Submicron surface-relief gratings were fabricated on fused silica by F₂-laser ablation with nanosecond duration pulses from a high-resolution 157-nm optical processing system. A 157 nm wavelength projection mask was prepared by ArF-laser ablation to form a 20-μm period grating of equal lines and spaces. A 25-fold demagnification of the mask by a Schwarzschild objective generated gratings of an 830-nm period and a 250 nm modulation depth, as characterized by SEM, AFM and HeNe-laser beam diffraction. Received: 24 April 2002 / Accepted: 25 April 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +49-551/503 599, E-mail: jihle@llg.gwdg.de     

Excimer laser patterned dielectric masks for the fabrication of diffractive optical elements by laser ablation

Masks for laser processing are generated by laser ablation patterning of dielectric layer systems. The application of these masks for the rapid fabrication of diffractive optical elements (DOEs) is presented. The diffractive optical elements are designed as phase-only elements, assuming an illumination with a plane wave. A continuous phase function is calculated using an iterative Fourier transform algorithm (IFTA). This continuous phase function is reduced to two or four levels by an iterative Fourier quantisation algorithm (IFQA) that is able to include focal power. The fabrication of the DOE is performed in a two-step process. First, a binary amplitude mask (or a set of masks for multi-level DOEs) is made by structured ablation of a highly reflective dielectric coating (HR 248 nm) from a fused silica substrate. This is accomplished by using an ArF excimer laser emitting at 193 nm, a wavelength that is sufficiently absorbed in the HfO₂/SiO₂-dielectric layer system, leading to precisely ablated mask structures. In the second step, this mask is used in a 4:1 projection configuration to generate a surface profile in a polymer substrate by ablation at 248 nm. The depth modulation can be defined by adjusting laser fluence and pulse number. Examples of DOEs ablated in polycarbonate are shown and their performance is characterised.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

F2-laser ablation patterning of dielectric layers

Spatially defined patterning of multi-layer dielectric optical systems by laser-induced ablation is demonstrated. A 49-layer high-reflectivity mirror for 193-nm light was irradiated with F₂-laser light through the CaF₂-substrate to cleanly remove the whole dielectric stack by rear-sided ablation. The 157-nm light is absorbed efficiently by dielectric layers such as SiO₂ and Al₂O₃ that are typically used for ultraviolet (UV) transmission at 193-nm and longer wavelengths. Thus it is possible to ablate highly reflective UV-laser mirrors (HR 193 nm) and to create dielectric masks that withstand high power levels at 193 nm. A single 157-nm pulse with a fluence of less than 500 mJ/cm² is sufficient to cleanly ablate the whole layer stack with sharp edges and without debris deposition. Received: 31 October 2000 / Accepted: 14 November 2000 / Published online: 10 January 2001     

Laser-induced positive ion and neutral atom/molecule emission from single-crystal CaHPO4·2 H2O: The role of electron-beam-induced defects

We examine laser-induced ion and neutral emissions from single-crystal CaHPO₄·2 H₂O (brushite), a wide-band-gap, hydrated inorganic single crystal, with 248-nm excimer laser radiation. Both laser-induced ion and neutral emissions are several orders of magnitude higher following exposure to 2 keV electrons at current densities of 200 7A/cm² and doses of 1 C/cm². In addition to intense Ca⁺ signals, electron-irradiated surfaces yield substantial CaO⁺, PO⁺, and P⁺ signals. As-grown and as-cleaved brushite show only weak neutral O₂ and Ca emissions, whereas electron-irradiated surfaces yield enhanced O₂, Ca, PO, PO₂, and P emissions. Electron irradiation (i) significantly heats the sample, leading to thermal dehydration (CaHPO₄ formation) and pyrolysis (Ca₂P₂O₇ formation) and (ii) chemically reduces the surface via electron stimulated desorption. The thermal effects are accompanied by morphological changes, including recrystallization. Although complex, these changes lead to high defect densities, which are responsible for the dramatic enhancements in the observed laser desorption.     

Pulsed laser deposition of tantalum pentoxide film

We report thin tantalum pentoxide (Ta₂O₅) films grown on quartz and silicon substrates by the pulsed laser deposition (PLD) technique employing a Nd:YAG laser (wavelength 5=532 nm) in various O₂ gas environments. The effect of oxygen pressure, substrate temperature, and annealing under UV irradiation using a 172-nm excimer lamp on the properties of the grown films has been studied. The optical properties determined by UV spectrophotometry were also found to be a sensitive function of oxygen pressure in the chamber. At an O₂ pressure of 0.2 mbar and deposition temperatures between 400 and 500 °C, the refractive index of the films was around 2.18 which is very close to the bulk Ta₂O₅ value of 2.2, and an optical transmittance around 90% in the visible region of the spectrum was obtained. X-ray diffraction measurements showed that the as-deposited films were amorphous at temperatures below 500 °C and possessed an orthorhombic (#-Ta₂O₅) crystal structure at temperatures above 600 °C. The most significant result of the present study was that oxygen pressure could be used to control the composition and modulate optical band gap of the films. It was also found that UV annealing can significantly improve the optical and electrical properties of the films deposited at low oxygen pressures (<0.1 mbar).     

High Power Continuous-Wave and Acousto-Optic Q-Switched Nd：GdVO4 Laser Operated at 912 nm

We present a high power and efficient operation of the ^4F3/2 → ^4I9/2 transition in Nd：GdVO4 at 912nm. In the cw mode, the maximum output power of 8.6 W is achieved when the incident pump power is 40.3 W, leading to a slope efficiency of 33.3% and an optical-optical efficiency of 21.3%. To the best of our knowledge, this is the highest cw laser power at 912nm obtained with the conventional Nd：GdVO4 crystal. Pulsed operation of 912nm laser has also been realized by inserting a small aeousto-optie （A-O） Q-Switch inside the resonator. As a result, the minimal pulse width of 20ns and the average laser power 1.43 W at the repetition rate of lOkHz are obtained, corresponding to 7.1 kW peak power. We believe that this is the highest laser peak power at 912nm. Furthermore, duration of 65ns has also been acquired when the repetition rate is 100 kHz.     

Sixth Harmonic of A Nd：YVO4 Laser Generation In KBBF for ARPES

We report that a deep ultraviolet （DUV） laser from the sixth harmonic of a 1064nm laser has been firstly used as light source in an ultrahigh energy-resolution angle-resolved photoemission spectroscopy （ARPES）. The wavelength is 177.3nm obtained by using the second harmonic KBe2BO3F2 crystal with a frequency tripled 1064nm Nd：YVO4 laser. The large flux （10^14 - 10^15 photons/s） and narrow line width （0.26 meV） are suitable for the ultrahigh-energy resolution ARPES. The laser-ARPES can be a powerful tool to study the electronic structure at and near the Fermi level of the superconductor and correlated materials. The laser-ARPES has worked more than 500 h already.     

Optical characterisation of the photolytic decomposition of ferrocene into nanoparticles

Optical emission from the photolytic dissociation of ferrocene Fe(C₅H₅)₂, often abbreviated as FeCp₂, in argon atmosphere was studied. The dissociation was performed by using an ArF excimer laser, operating at a wavelength of 193 nm. Two pressure regions were examined. At low (0.1 mbar) pressure, several emission lines of Fe could be identified, however no C, C₂, or CH emission lines/bands were found. At a higher (20 mbar) pressure of the FeCp₂/Ar gas mixture, a broadband emission identified as blackbody radiation was observed. This blackbody radiation originates from nanoparticles with a mean size of 30 nm, which consist of both metallic iron and amorphous carbon. The initial colour temperature of the particles was 2600 K.     

Preventing biological activity of Ulocladium sp spores in artifacts using 157-nm laser

High resolution atomic force microscopy images of immobilized Ulocladium sp cultures on silicon wafers reveal the cessation of biological activity after laser illumination at 157 nm. Laser light dissociates the external multilayered proteinaceous membrane of the spores, reducing their thickness to a critical value prior to cell explosion due to the high internal pressure of the nucleus. The population of a monolayer culture was successfully destroyed following illumination with 150 laser pulses at the fluence of 1 mJ/cm² per pulse. A thin layer of 0.3 nm was removed on the average from the external membrane per pulse, and a thin layer of 45 nm had to be removed from the external membrane before cell explosion. Thus, the use of a 157-nm laser is an effective and controllable method for stopping biological activity of Ulocladium sp spores in artifacts. This finding supports previous results of using 157-nm lasers against foxing in historic paper preservation. PACS 87.50.Gi; 87.50.Hj; 87.64.-t; 87.16.Gj     

Efficient continuous-wave 908 nm Nd:YLF laser emission under direct 880 nm pumping

The quasi-three-level 908-nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level ⁴ F _3/2 of Nd:YLF have been demonstrated. An end-pumped Nd:YLF crystal yielded 4.7 W of output power for 11.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 43.3%. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880-nm wavelength pumping.     

Mass spectroscopy and ablation characteristics of nylon 6.6 in the ultraviolet

We report on the mass spectroscopic and the laser ablative characteristics of nylon 6.6 [-NH-(CH₂)₆-NH-CO-(-CH₂)₄-CO-] at 193 and 248 nm, using the ArF and KrF excimer lasers. The characteristic parameters of the laser ablative process, such as etch rate at different fluences, the threshold fluence, and the absorption coefficient for both wavelengths were determined. Even at low laser energy, there was a complete breaking of the polymeric chain bonds. The following photofragments were observed at 248 nm: H, H₂, C, CH, CH₂, N, NH, O, OH, H₂O, C₂H, C₂H₂, CN, C₂H₃, HCN, N₂, CO, C₂H₄, COH, C₂H₅, N₂H, NO, C₂H₆, H₂CO, N₂H₂, C₂, CH₂NH, O₂, C₃H₃, C₃H₄, C₃H₅, C₃H₆, CNO, HCNO, and H₂CNO. At 193 nm no photofragments were observed for m/e larger than 30 amu. The photofragments with two carbon atoms have a relatively higher probability to be dissociated from the parent monomer, than heavier photofragments with four carbon atoms. The mass spectroscopic studies and the absorption spectrum of nylon 6.6 in the ultraviolet, suggest photochemical bond-breaking at 248 and 193 nm. The monomer dissociates into fragments with the predominant mass at 28 amu for both laser wavelengths. Therefore the amide group is mainly involved in the photodissociation process of nylon 6.6 in the ultraviolet. The experimental results suggest that the photochemical dissociation of the polymeric chain is the dominant mechanism of the laser ablation of nylon 6.6 at 193 and 248 nm.     

Performance of optical fibers for transmission of high-peak-power XeCl excimer laser pulses

The simple and efficient fiber delivery of 5-ns pulses from a XeCl excimer laser operating at a wavelength of 308 nm is demonstrated. The coupling scheme uses all of the output energy of the XeCl excimer laser and benefits from a simple and easy-to-adjust fiber coupling. Experiments on the 308-nm fiber delivery for more than 2.5 million laser pulses of 8-ns pulse width (FWHM) and up to 8-mJ stabilized pulse energy are performed. The long-time pulsed UV laser transmission is found to be different for individual samples of optical fibers that perform very similarly in low-intensity UV light applications. For applications with strict demands on the long-time stability, a critical evaluation of the fiber performance with the 308-nm laser under operating conditions is necessary. Measurements between 1 and 200 Hz show a negligible dependence of the fiber delivery performance on the repetition rate of the transmitted laser pulses. PACS 42.55.Lt; 42.81.Cn; 07.69.Vg     

用157 nm激光制作的光子晶体光纤法布里-珀罗传感器

157nm准分子激光用于微加工具有单光子能量高,峰值功率高,材料吸收系数高,分辨率高等优点。利用157nm激光微加工的方法,在光子晶体光纤上融切出微小矩形孔,从而构成腔长为45.6μm的微光纤法布里-珀罗干涉腔,得到的干涉条纹平滑,衬比度约为26dB,并从激光与石英材料的相互作用上分析了形成较好干涉条纹的原因。把这种微腔应用于应变测量,在550μm范围内,腔长增量相对于应变的灵敏度为0.32nm/μm,线形度达0.9994。实验证明该微腔对温度不敏感,800℃范围内腔长变化仅20nm。157nm准分子激光加工光纤法布里-珀罗腔方法简单,一次成型,具有较高的加工效率和精度,有望实现光纤法布里-珀罗腔的规模化批量制造,具有较好的应用前景。     

Determining the properties of pulsed laser deposited thin films by controlling the kinetic energy of the film-forming particles

The deposition of Al₂O₃ thin films by pulsed KrF excimer laser radiation (248 nm) on fused silica substrates is investigated as a function of the processing variables: laser fluence, processing gas pressure and target-to-substrate distance. The kinetic energy of the Al species in the laser-generated plasma, as measured by time-of-flight optical emission spectroscopy and time-of-flight quadrupole mass spectrometry, is described as a function of the type and pressure of the processing gas, the distance from target, and the laser fluence. The influence of the kinetic energy of the film-forming particles on the density and the refractive index of the resulting films, determined by ellipsometry, is investigated. The densification of the Al₂O₃ thin films to 94% of the bulk value is achieved by film-forming Al particles impinging on the growing surface with mean kinetic energies of about 25 eV.     

Excimer ArF laser with an output energy of 1.3 J at 2.0% efficiency on the He:Ar:F2 mixture

In this paper it is shown that to achieve a maximum efficiency and high output energy of an ArF (193 nm) excimer laser, one should use optimal pump intensity. It has been shown experimentally that the optimal pump intensity for an ArF excimer laser with the mixture of He:Ar:F₂ has a value of 4.5–5.0 MW/cm³. The results of an experimental study of the pump and active medium parameters effect on the efficiency and output energy of the ArF excimer laser on the mixture of He:Ar:F₂ are presented. To provide high pump intensity of an active medium, the excitation scheme of the LC-inverter type has been used where the current return conductor inductance had been increased from 30 to 80 nH. This allows the pump to achieve levels of intensity above 5.0 MW/cm³. By using the pump intensity of 5.0 MW/cm³ in an active medium of He:Ar:F₂–79.7:20:0.3 at total pressure of 2.4 atm, we are the first to obtain the output energy of 1.3 J at the total efficiency of 2.0%. The pulse duration (FWHM) was 15±1 ns and the peak pulse power was 85 MW. PACS 42.55.Lt; 42.60.Lh     

F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F₂ laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm² to an optimized single pulse fluence of 4.5 J/cm² for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F₂ laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. PACS 79.20.Ds; 42.62.Cf; 42.55.Lc