Glass formation and properties of GeTe4-Ga2Te3-AgX (X = I/Br/Cl) far infrared transmitting chalcohalide glasses

A new family of Tellurium-based glasses GeTe₄-Ga₂Te₃-AgX (X = I/Br/Cl) has been investigated and the glass-forming region was determined. Properties measurements include XRD, DTA, vis-NIR, and IR transmission spectra. The amorphous nature of the glasses has been proved by X-ray diffraction. Among the three systems, the GeTe₄-Ga₂Te₃-AgI glass system shows superior glass-forming ability and thermal stability. The maximum value of ΔT (= T_x − T_g) lies at about 110 °C for the glass composition 60GeTe₄-2-20Ga₂Te₃-20AgI, while for 60GeTe₄-20Ga₂Te₃-20AgBr and 60GeTe₄-20Ga₂Te₃-20AgCl, the ΔT values are both only 88 °C. Most of the studied glasses have a wide optical transmission window from 1.8 to 25 μm.     

Inversion of conductivity type in Bi2Te3−xSx crystals

Transport parameters and optical properties of Bi₂Te_3?xS_x single-crystals with x=0–0.18 were studied. With increasing sulphur content the concentration of free current carriers decreases up to x=0.12, due to the interaction of S^x_Te defects with antisite defects Bi^′_Te, and then the p-type conductivity changes to the n-type. The optical gap of Bi₂Te_3?xS_x crystals increases with increasing S content. The obtained results led to the preparation of Bi₂Te₃-Bi₂Te_3?xS_xp–n junction by the heat treatment of p-type Bi₂Te₃ in S vapours.     

Glass formation in the As2Se3-As2Te3-Sb2Te3 system

Chalcogenide glasses from the As₂Se₃-As₂Te₃-Sb₂Te₃ system were synthesized for the first time. The glass-forming region was determined by X-ray diffraction and electron microscopic analyses.The basic physicochemical parameters such as density (d), microhardness (HV) and temperatures of phase transformations (glass transition T_g, crystallization T_cr and melting T_m) were measured. Compactness and some thermomechanical characteristics such as volume (V_h) and formation energy (E_h) of micro-voids in the glassy network as well as the elasticity module (E) were calculated. The glass-forming ability was evaluated according to Hruby's criteria (K_G). The correlation between composition and properties of the (As₂Se₃)_x(As₂Te₃)_y(Sb₂Te₃)_z glasses was established and comprehensively discussed.     

Co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature in nanocrystalline La0.7Te0.3MnO3

Sol-gel prepared nanocrystalline La_0.7Te_0.3MnO₃ has rhombohedral crystal structure (space group R3¯C) at room temperature and orders ferromagnetically at ∼280 K (T_C). A large magnetic entropy change of ∼12.5 J kg⁻¹ K⁻¹ is obtained near T_C for a field change of 50 kOe. This magnetocaloric effect could be explained in terms of Landau theory. The temperature dependence of electrical resistivity shows metal-insulator transition at T_C and a giant magnetoresistance of ∼52% in 50 kOe. The co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature makes nanocrystalline La_0.7Te_0.3MnO₃ a promising material for magnetic refrigeration and spintronic device applications.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

Electrical transport properties of a quasi-one-dimensional Nb3Te4 single crystal

The electrical resistance of a linear chain metal Nb₃Te₄ were measured from 1.3 to 320 K. The residual resistance ratio $\text{R(300}\text{K}\text{)}\text{R(4.2}\text{K}\text{)}$ is about 3. Nb₃Te₄ shows an anomaly in the resistivity vs temperature at about 80 K, suggesting an occurrence of a charge-density-wave transition. The transverse and longitudinal magnetoresistance at 4.2 K are proportional to the magnetic field in the range of 2–58 kOe. In the superconducting region close to the transition temperature T_c, the critical magnetic field H_c2 is proportional to δT=T_c?T. The angular dependence of H_c2 fits well with the fluxoid model of the Ginzburg-Landau theory. The ratio of the critical fields parallel and perpendicular to the chain direction is 4.8.     

Electrical transport and high thermoelectric properties of PbTe doped with Bi2Te3 prepared by HPHT

In this paper, n-type lead telluride (PbTe) compounds doped with Bi₂Te₃ have been successfully prepared by high pressure and high temperature (HPHT) technique. The composition-dependent thermoelectric properties of PbTe doped with Bi₂Te₃ have been studied at room temperature. The figure-of-merit, Z, for PbTe is very sentivite to the dopants, which could be improved largely although the doped content of Bi₂Te₃ is very small (<0.08 mol%). In addition, the maximum value reaches to 9.3×10⁻⁴ K⁻¹, which is about 20% higher than that of PbTe alloyed with Bi₂Te₃ sintered at ambient pressure (7.6×10⁻⁴ K⁻¹) and several times higher than that of small grain size PbTe containing other dopants. The improved thermoelectric performance in this study may be due to the effect of high pressure and the low lattice thermal conductivity resulting from Bi₂Te₃ as source of dopants.     

Dielectric parameters in Se70Te30 and Se70Te28Zn2 chalcogenide glasses

Temperature and frequency dependence of dielectric constant (ε′) and dielectric loss (ε″) are studied in glassy Se₇₀Te₃₀ and Se₇₀Te₂₈Zn₂. The measurements have been made in the frequency range (8-500 kHz) and in the temperature range 300 to 350 K. An analysis of the dielectric loss data shows that the Guintini's theory of dielectric dispersion based on two-electron hopping over a potential barrier is applicable in the present case.No dielectric loss peak is observed in glassy Se₇₀Te₃₀. However, such loss peaks exist in the glassy Se₇₀Te₂₈Zn₂ in the above frequency and temperature range. The Cole-Cole diagrams have been used to determine some parameters such as the distribution parameter (α), the macroscopic relaxation time (τ₀), the molecular relaxation time (τ) and the Gibb's free energy for relaxation (ΔF).     

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Ion beam sputtering process was used to deposit n-type fine-grained Bi₂Te₃ thin films on BK7 glass substrates at room temperature. In order to enhance the thermoelectric properties, thin films are annealed at the temperatures ranging from 100 to 400 °C. X-ray diffraction (XRD) shows that the films have preferred orientations in the c-axis direction. It is confirmed that grain growth and crystallization along the c-axis are enhanced as the annealing temperature increased. However, broad impurity peaks related to some oxygen traces increase when the annealing temperature reached 400 °C. Thermoelectric properties of Bi₂Te₃ thin films were investigated at room temperature. The Bi₂Te₃ thin films, including as-deposited, exhibit the Seebeck coefficients of −90 to −168 μV K⁻¹ and the electrical conductivities of 3.92×10²-7.20×10² S cm⁻¹ after annealing. The Bi₂Te₃ film with a maximum power factor of 1.10×10⁻³ Wm⁻¹ K⁻² is achieved when annealed at 300 °C. As a result, both structural and transport properties have been found to be strongly affected by annealing treatment. It was considered that the annealing conditions reduce the number of potential scattering sites at grain boundaries and defects, thus improving the thermoelectric properties.     

Effects of double filling of Pb and Ba on thermoelectric properties of PbxBayCo4Sb11.5Te0.5 compounds by HPHT

Skutterudite compounds Pb_xBa_yCo₄Sb_11.5Te_0.5 (x≤0.23,y≤0.27) with bcc crystal structure have been prepared by the high pressure and high temperature (HPHT) method. The study explored a chemical method for filling Pb and Ba atoms into the voids of CoSb₃ to optimize the thermoelectric figure of merit ZT in the system of Pb_yBa_xCo₄Sb_11.5Te_0.5. The structure of Pb_xBa_yCo₄Sb_11.5Te_0.5 skutterudites was evaluated by means of X-ray diffraction. The Seebeck coefficient, electrical resistivity and power factor were performed from room temperature to 710 K. Compared with Co₄Sb_11.5Te_0.5, the thermal conductivity of Pb and Ba double-filled samples was reduced evidently. Among all filled samples, Pb_0.03Ba_0.27Co₄Sb_11.5Te_0.5 showed the highest power factor of 31.64 μW cm⁻¹ K⁻² at 663 K. Pb_0.05Ba_0.25Co₄Sb_11.5Te_0.5 showed the lowest thermal conductivity of 2.73 W m⁻¹ K⁻¹ at 663 K, and its maximum ZT value reached 0.63 at 673 K.     

Preparation and properties of co-evaporated bismuth telluride [Bi2Te3] thin films

Thin films of bismuth telluride have been prepared by the reactive evaporation method. Film properties, such as conductivity, Hall effect, and thermoelectric power were studied in the temperature range from liquid nitrogen to 350 K. The films prepared were of n-type with a carrier concentration of 1.25 x 10²⁰ at room temperature. The temperature dependence of the Hall mobility is found to be T^?1.8 indicating lattice scattering.     

The heat capacity of the layer compounds (CH3CH2CH2NH3)2MnCl4 and (CH3CH2CH2NH3)2CdCl4 from 10 K TO 300 K

The heat capacity of the layer compounds tetrachlorobis (n-propylammonium) manganese II and tetrachlorobis (n-propylammonium) cadmium II, (CH₃CH₂CH₂NH₃)₂MnCl₄ and (CH₃CH₂CH₂NH₃)₂CdCl₄ respectively, has been measured over the temperature range 10 K ?T ? 300 K.Two known structural phase transitions were observed for the Mn compound in this temperature region: at T = 112.8 ± 0.1 K (ΔH_t= 586 ± 2 J mol^?1; ΔS_t = 5.47 ± 0.02 J K^?1mol^?1) and at T =164.3 ± (ΔH_t = 496 ± 7 J mol^?1; ΔS_t =3.29 ± 0.05 J K^?1mol^?1). The lower transition is known to be from a monoclinic structure to a tetragonal structure, while the upper is from the tetragonal phase to an orthorhombic one. From comparison with the results for the corresponding methyl Mn compound it is deduced that the lower transition primarily involves changes in H-bonding while the upper transition involves motion in the propyl chain.A new structural phase transition was observed in the Cd compound at T= 105.5 ± 0.1 K (ΔH_t= 1472.3 ± 0.1 J mol^?1; ΔS_t = 13.956 ± 0.001 J K^?1mol^?1), in addition to two transitions that have been observed previously by other techniques. The higher of these transitions(T = 178.7 ± 0.3 K; ΔH_t = 982 ± 4 J mol^?1 ΔS_t = 6.16 ± 0.02 J K^? mol^?1) is known to be between two orthorhombic structures, while the structural changes at the lower transition (T= 156.8 ± 0.2 K; ΔH_t = 598 ± 5 J mol^?1, ΔS_t = 3.85 ± 0.03 J K^?1 mol^?1) and at the new transition are not known. It is proposed that these two transitions correspond respectively to the tetragonal to orthorhombic and monoclinic to tetragonal transitions in the propyl Mn compounds.In addition to the structural phase transitions (CH₃CH₂CH₂NH₃)₂MnCl₄ magnetically orders at t? 130 K. The magnetic contribution to the heat capacity is deduced from the heat capacity of the corresponding diamagnetic Cd compound and is of the form expected for a quasi 2-dimensional Heisenberg antiferromagnet.     

Third-order nonlinear optical properties of GeSe2-Ga2Se3-PbI2 glasses

The third-order nonlinear optical (NLO) properties of new selenium-based GeSe₂-Ga₂Se₃-PbI₂ glasses have been measured using the optical Kerr effect (OKE) technique, with picosecond and femtosecond laser pulses. The 0.70GeSe₂-0.15Ga₂Se₃-0.15PbI₂ glass has the largest third-order optical nonlinear susceptibility in GeSe₂-Ga₂Se₃-PbI₂ glass system with χ⁽³⁾ of 5.28×10¹² esu. In addition, the response time of glasses is sub-picosecond, which is predominantly associated with electron cloud. Local structure of the glasses has been identified by using Raman studies, while the origins of the observed nonlinear optical response are discussed. The [Ge(Ga)Se₄] tetrahedral and lone-pair electrons from highly polarizable Pb atom in glasses play an important role in enhanced NLO response. These results as well as their good chemical stability indicate that GeSe₂-Ga₂Se₃-PbI₂ glasses are promising materials for photonic applications of third-order nonlinear optical signal processing.     

Thermoelectric power and phase transition of polycrystalline As2Te3 under pressure

The pressure dependence of the thermoelectric power of monoclinic As₂Te₃ is measured up to 10 GPa using a Mao-Bell diamond anvil cell. The thermoelectric power never reaches an absolute value greater than the ambient pressure value of 242 μV/K. Evidence of a phase transition is present between 6 and 8 GPa where the thermoelectric power reaches an absolute value of 225 μV/K after passing through a minimum of S≈75 μV/K. X-ray diffraction experiments confirm that the resulting structure is β-As₂Te₃, which is isostructural with Bi₂Te₃ and Sb₂Te₃.     

Ferroelastic phase transition and anomalous elastic and thermal properties of betaine borate (CH3)3NCH2COO·H3BO3

The temperature and pressure derivatives of the elastic constants of orthorhombic betaine borate, (CH₃)₃NCH₂COO·H₃BO₃, have been determined by measuring temperature and stress induced shifts of resonance frequencies of thick plates at ca. 15 MHz in the range between 140 and 300 K and 0 and 3 kbar. The elastic ‘shear’ resistance c₄₄ exhibits a value as low as 0.0492×10¹⁰Nm^-2at 293 K. With decreasing temperature c₄₄ approaches zero at ca. 142.5 K, indicating an acoustic soft mode behaviour connected with a ferroelastic phase transition. The softening of c₄₄ is described in a good approximation by c₄₄(T)_p=0 =alogT/T₀ with a=0.0663×10¹⁰Nm^-2 and T₀ = 139.5 K. Further, c₄₄ decreases with increasing pressure according to the linear relation c₄₄(p)_{T=293 K} = 0.0492?0.184×10^-4p (p in bar, c₄₄ in 10¹⁰ Nm^-2). All other elastic constants show a quite normal temperature and pressure dependence. At 293 K the transition is induced by a pressure of 2.65 kbar. The transition temperature T_c depends linearly on pressure according to T_c = 142.5+0.0568 p (pinbar, T_cinK). Passing through the transition no discontinuous change of the lattice constants is observed. The three principal coefficients of thermal expansion and the pressure derivatives of the dielectric constants exhibit discontinuities at the transition. The transition is of strongly second order.     

Hall mobility of amorphous Ge2Sb2Te5

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge₂Sb₂Te₅ have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm²/V s at room temperature).     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

Magnetic properties of stuffed copper chromium tellurides Cu1+xCr2+yTe4 (x=0-1, y<0.3)

We present a detail study of the effect of excess metal atoms on the magnetic properties of Cu_1+xCr_2+yTe₄ at 2-400 K. With the increase in x=0-1 and y<0.3, these compounds retain metallic behavior, while ferromagnetic ordering temperature reduces from 325 to 160 K. Our low field susceptibility χ_ac measurements reveal a second transition on cooling below the ferromagnetic ordering; the transition at around 160-180 K intensifies with the excess amount of copper and chromium atoms. The value of spontaneous magnetization at 2 K remains between 2.6 and 2.9μ_B across all the compositions and it reduces with temperature as M(T)∼A₀T^3/2+A₁T^5/2, as expected for the excitation of Bloch's spin waves in a model of the Heisenberg ferromagnet. Our terminal composition Cu_1.9Cr_2.25Te₄ showed only second transition at 160 K with short range magnetic order much above the transition temperature and in the absence of the specific heat jump at this temperature. The magnetic properties are explained as a result of random magnetic anisotropy in the excess-metal compositions induced by the interstitial atomic defects in their parent spinel structure. The large stuffing of cations has been made possible in the telluride compounds because of the large size of tellurium and also by the covalent bonding that stabilizes the defect structure.     

Antiferromagnetic phase transition in garnet-type AgCa2Co2V3O12 and AgCa2Ni2V3O12

Antiferromagnetic phase transition in two vanadium garnets AgCa₂Co₂V₃O₁₂ and AgCa₂Ni₂V₃O₁₂ has been found and investigated extensively. The heat capacity exhibits sharp peak due to the antiferromagnetic order with the Néel temperature T_N=6.39 K for AgCa₂Co₂V₃O₁₂ and 7.21 K for AgCa₂Ni₂V₃O₁₂, respectively. The magnetic susceptibilities exhibit broad maximum, and these T_N correspond to the inflection points of the magnetic susceptibility χ a little lower than T(χ_max). The magnetic entropy changes from zero to 20 K per mol Co²⁺ and Ni²⁺ ions are 5.31 J K⁻¹ mol-Co²⁺-ion⁻¹ and 6.85 J K⁻¹ mol-Ni²⁺-ion⁻¹, indicating S=1/2 for Co²⁺ ion and S=1 for Ni²⁺ ion. The magnetic susceptibility of AgCa₂Ni₂V₃O₁₂ shows the Curie-Weiss behavior between 20 and 350 K with the effective magnetic moment μ_eff=3.23 μ_B Ni²⁺-ion⁻¹ and the Weiss constant θ=−16.4 K (antiferromagnetic sign). Nevertheless, the simple Curie-Weiss law cannot be applicable for AgCa₂Co₂V₃O₁₂. The complex temperature dependence of magnetic susceptibility has been interpreted within the framework of Tanabe-Sugano energy diagram, which is analyzed on the basis of crystalline electric field. The ground state is the spin doublet state ²E(t₂⁶e) and the first excited state is spin quartet state ⁴T₁(t₂⁵e²) which locates extremely close to the ground state. The low spin state S=1/2 for Co²⁺ ion is verified experimentally at least below 20 K which is in agreement with the result of the heat capacity.     

Magnetoelectric and Mössbauer studies of Fe2 TeO6

The magnetic symmetry of antiferromagnetic Fe₂TeO₆ indicates that this material should exhibit magnetoelectricity. This prediction has been confirmed by the observation of the electrically induced magnetoelectric (ME) effect in powder samples. Both parallel and perpendicular ME susceptibilities were measured as a function of increasing temperature. The ME effect vanishes at 209°K which is identified as the Néel point of the compound. The single crystal ME susceptibilities are derived from the powder results. The maximum value of the axial ME susceptibility α₃₃ = M₃/E₃ is (in Gaussian units) 3 × 10⁻⁵ at T = 175°K. In addition to magnetoelectricity the magnetic symmetry of Fe₂ TeO₆ indicates that no hyperfine field should exist at the Te⁶⁺ sites. This prediction was confirmed by Mössbauer studies on I¹²⁹ produced in Te⁶⁺ sites by irradiating samples of Fe₂ TeO₆ in a reactor.