少周期激光脉冲与气体作用产生的离化电流和THz波辐射

本文通过理论和数值模拟,研究少周期激光脉冲电离气体原子产生的离化电流 以及相应的THz波辐射.研究表明,少周期激光脉冲离化气体后能产生较大的离化电流, 因而可以产生较强的THz辐射.不同的少周期激光脉冲相位导致电离出的 电子初始速度和电离起始时刻不同,从而产生的离化电流有所不同, 辐射的THz波随激光脉冲的相位成周期性变化.该理论得到一维PIC数值模拟的验证. 对于给定的激光脉冲相位,离化电流和THz辐射振幅并没有随入射激光振幅的增加而单调增加, 而是存在一些极值点.与均匀分布气体相比,当气体分布具有一定梯度时, 辐射表现相似的规律,但频谱会发生一定的变化.     

激光器型全光波长转换器的小信号分析

当外部光子注入到激光器有源腔中时 ,载流子把被注入光子消耗的一部分放大 ,进而激光器自身的输出功率将降低。基于此 ,可以实现全光波长转换。理论上基于载流子消耗机制 ,对激光器型波长转换器进行了小信号分析 ,给出了频率响应函数。理论分析表明 ,激光器型全光波长转换器的转换速度取决于激光器光子寿命以及激光器腔内的光子密度。     

Enhancement of chaotic carrier bandwidth in laser diode transmitter utilizing external light injection

Semiconductor laser with optical feedback emitting chaotic optical signal can be treated as chaotic carrier transmitter. Based on laser rate equations, we numerically study the effect of external injection light on the bandwidth of chaotic carrier transmitter. Our numerical simulation shows that the bandwidth of the chaotic carrier transmitter can be enhanced significantly by external photons injection. Compared with the 2 GHz relaxation oscillation frequency of a solitary laser diode without optical injection, the bandwidth of a chaotic carrier transmitter is expanded to 14.5 GHz with injection parameter at k_inj = 0.39. Simulation results also demonstrate that the enhanced bandwidth depends obviously on the frequency detuning between the external injection laser diode and the chaotic carrier transmitter. The maximum bandwidth of the chaotic transmitter can be obtained when the frequency of the injected light is higher than the central frequency of the carrier transmitter between 2 GHz and 4 GHz.     

Combined continuum-atomistic modeling of ultrashort-pulsed laser irradiation of silicon

Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm², the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.     

激光对半导体材料损伤的机理研究

研究了半导体材料对激光的吸收机制。运用一维热传导方程以及载流子耦合扩散方程研究了激光与半导体材料相互作用的热输运、自由载流子输运过程。分析了半导体材料的热学损伤、力学损伤,以及光电探测器的击穿损伤机制。应用数值模拟的方法对Nd:YAG脉冲激光(1.06μm)辐照下感兴趣的半导体材料PbS内部瞬时温度场分布进行了模拟。     

Plasma model of carrier transportation in photoelectric semiconductor detectors

A new model, called the plasma model, describing carrier transportation in photoelectric semiconductor detectors is proposed. Semiconductor material under laser irradiation is regarded as a plasma of low temperature with high carrier density, and it is considered that the carrier temperature is different from the lattice temperature when the irradiating laser power is high but lower than the damage threshold of the detectors. Equations for the carrier density, velocity and temperature are established. According to the model, numerical simulations of a photoconductive semiconductor detector were carried out by programming. The instantaneous change behaviors of the photoconductive detector are obtained. The results of the numerical calculation match well with the experimental results. PACS 42.65.Sf; 85.60.Gz     

脉宽对中红外激光带内损伤HgCdTe材料的影响

研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85 μm,脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中,300 ps～3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。     

Image transfer by modulation of short light pulses

This paper shows that the Fourier-processing based modulation of short laser pulses can be successfully used for all-optical image transfer. The system under consideration consists of a transmitter, where the transferred image modulates the frequency profile of a carrier pulse, and a receiver, where after the reverse processing an original image is restored. The main limitations are discussed and the information capacity of a single pulse is obtained. The results from preliminary experiments using a CPM-ring dye laser as a source of carrier pulses are presented.     

The effects of carrier degeneracy on transport properties of the double heterostructure injection laser

It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.     

All-optical active mode locking with a nonlinear semiconductor modulator

All-optical active mode locking of a picosecond Nd:YVO(4) laser is demonstrated by use of an intracavity semiconductor nonlinear Fabry-Perot mirror. The reflectivity of the Fabry-Perot mirror is modulated by optical carrier injection. Depending on the carrier recombination time, the width of the Nd:YVO(4) laser pulses varies from 6 to 20 ps, as is typical for passively mode-locked Nd:YVO(4) lasers.     

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.     

Turn-on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers

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Performance investigation on harmonic distortion and inter-modulation distortion induced degradation for a single- and two-tone IM-DD SCM optical link

Subcarrier multiplexing (SCM) has been utilized for data transmission in high performance broadband in access networks which requires high transport capacity and throughput with guaranteed quality of service. In a transmitter employing SCM technique in an Intensity Modulation Direct Detection (IM-DD) system, laser source nonlinearity is an important issue of concern. This work investigates the sensitivity of resulting harmonic distortion (HD) and inter-modulation distortion (IMD) to changes in subcarrier amplitude, laser bias current operational parameters and laser quantum efficiency, laser active layer volume and laser carrier life time design parameters. Results show that IMD impairment mechanism is more dominant than HD mechanism. The spectrum analyser shows distinct difference in the frequency domain display of HD and IMD dominated systems. HD and IMD mechanisms show high sensitivity to carrier amplitude and active layer volume with a positively increasing slope gradient and high sensitivity to bias current and carrier life time with negatively decreasing slope gradients. Also these impairments are moderately sensitive to laser quantum efficiency. The investigations will help in identification of the most influencing operational and design parameters and their suitable values to be used to effectively reduce the influence of the source nonlinearity of SCM links.     

The impact of nonequilibrium gain in a spectral laser diode model

We describe the inclusion of nonequilibrium gain into a self-consistent 2.5D CW spectral laser diode model and report on the use of this model to investigate the origin of gain compression in a 975 nm high-brightness tapered QW laser diode. Nonequilibrium gain is calculated using a dynamic gain model, which simulates the dynamic relaxation of the quantum well carrier energy distributions under the influence of steady-state electrical and optical excitation. Calculated gain and spontaneous emission spectra are included in the laser model via parameterised look up tables. Both simulated and experimentally measured intracavity spontaneous emission spectra show an increased carrier density and a blue-shift of the gain maximum with increasing bias caused by carrier heating and spectral hole burning. The accurate incorporation of nonequilibrium gain compression is therefore vital for the accurate prediction of the operating characteristics of these devices and for the experimental determination of the active region temperature.     

EFFECTS OF BANDGAP SHRINKAGE IN FEMTOSECOND ABSORPTION SATURATION MEASUREMENTS OF GaAs FILM

Using CPM dye laser and self-mode-locked Ti sapphire laser as pump-probe optical sources, the effects of bandfilling and bandgap shrinkage on the femtosecond absorption saturation spectra of GaAs film have been studied, For exciting photon energy of 1.97eV and carrier density of 1×10¹⁸cm^-3, an optical-induced absorption increase is observed and is attributed to bandgap shrinkage, The dependence of the absorption coefficient change on the carrier temperature and the carrier densities is discussed.     

Hole capture rate of GaInAs/InP strained quantum-well lasers

The property of hole capture of quantum wells is important in the static properties of lasers above threshold, such as the differential efficiency and light output power. We investigate experimentally the hole capture rate and its influence on the carrier overflow in the optical confinement layers for compressive-strained, tensile-strained and unstrained GaInAs/GaInAsP/InP quantum-well lasers emitting at 1.5 m by measuring the spontaneous emission from the optical confinement layers above threshold. The carrier density in the optical confinement layers increases with current owing to finite hole capture rates. This increase is dependent on well thickness and barrier height determined by the strain. This increase is comparable in the tensile-strained and unstrained lasers with relatively low threshold, while in the compressive-strained laser it is about double that in the other two types. The dependence of this increase on threshold carrier density is also observed, that is the carrier density in the optical confinement layers increases rapidly in high-threshold samples, in particular, in the tensile-strained laser with large hole barrier height. From these results, laser operation with high output power and high efficiency is expected by reducing threshold carrier density in the tensile-strained laser and by increasing well numbers in the compressive-strained laser as long as the inhomogeneous injection between wells is not severe. By fitting measurements with theory, the hole capture time is estimated as 0.1 to 0.25 ps in these strained and unstrained lasers.     

基于双光反馈半导体激光器的单向开环混沌同步通信

利用双光反馈半导体激光器作为混沌发射源, 构建了一个单向开环混沌通信系统, 并对系统的通信性能进行了相关仿真研究. 研究表明: 通过合理选取系统参量, 双光反馈半导体激光器所产生的混沌载波能很好地抑制外腔延时特征; 发射激光器和接收激光器在强注入锁定下能实现很好的混沌同步, 并且同步性能对频率失谐具有很好的容忍性; 采用附加混沌调制加密方式, 500 Mbits/s的信号能够很好地隐藏于混沌载波中, 并可在接收端成功解调. 关键词： 半导体激光器 单向耦合 混沌通信     

Injection-locking technique for heterodyne optical phase locking of a diode laser

A novel technique is demonstrated for heterodyne optical phase locking of a diode laser to a single-frequency source by injection seeding. By modulation of the drive current of the diode laser at as much as several gigahertz, FM sidebands are imposed upon the output. We demonstrate that it is possible to phase lock either sideband to an injected beam. The carrier of the diode laser output is therefore locked in phase with the injected light but with a frequency difference given by the modulation of the drive current. The phase fluctuations between the lasers are analyzed, and the variance is found to be (4.4( degrees ))(2) , corresponding to 99.4% of the diode carrier light locked to the injected beam.     

Optical carrier-suppression technique with a Brillouin-erbium fiber laser

We demonstrate a new concept in optical carrier control that uses a simple arrangement based on a hybrid Brillouin-erbium fiber laser. The system offers precise tunable control of the optical carrier amplitude independently of the characteristics of the transmitter or the optical modulation format. As much as 55 dB of carrier attenuation is demonstrated, which to our knowledge is the highest reported attenuation for a carrier-suppression system.     

多量子势垒双阻挡层结构对AlGaN 基深紫外激光二极管的性能优化

为提高AlGaN基深紫外激光二极管(Deep Ultraviolet Laser Diodes,DUV-LD)有源区内载流子浓度,减少载流子泄露,提出一种DUV-LD双阻挡层结构,相对于传统的单一电子阻挡层(Electron Blocking Layer, EBL)结构,又引入一空穴阻挡层(Hole Blocking Layer, HBL),仿真结果证明空穴阻挡层的应用能很好地减少空穴泄漏.同时又对双阻挡层改用五周期Al_0.98Ga_0.02N/Al_0.9Ga_0.1N多量子势垒层结构,结果显示与矩形EBL和HBL激光二极管相比,多量子势垒EBL和HBL激光二极管有更好的斜率效率,并且有源区内电子和空穴载流子浓度以及辐射复合速率都有效提高,其中多量子势垒EBL在阻挡电子泄露方面效果更显著.