Quantum-well states in bilayers of Ag and Au on W(1 1 0)

sp-Like quantum-well states (QWS) in thin monocrystalline bilayer films of Ag and Au on W(1 1 0) and of single Ag films were studied by angle-resolved photoemission. We find that the propagation of the electronic states in the bilayer films along [1 1 1] depends on the energy relative to the band edge of Au metal at the L point of the Brillouin zone. In particular, QWS with binding energies less than this band-edge energy (1.1 eV) are strongly confined to the Ag layer, while for higher binding energies the QWS extend across the whole bilayer film. This clearly demonstrates the weakness of the potential barrier at the Ag/Au interface in the context of QWS formation at energies where electronic states exist in both metals.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

Quantum-size effects in photoemission from ultra-thin films:: Theory and application to Cu-films on fcc-Co(001)

We report on detailed calculations of quantum-size effects on the electronic structure of the valence-band regime and their manifestation in photoemission. Model calculations reveal the basic features of photoemission from quantum-well states (QWS). First, emission from QWS shows intensity variations with photon energy which is similar to that of semi-infinite systems, despite the discrete binding energies of the QWS. Second, conservation of the wave-vector component normal to the surface is directly related to the film thickness. Numerical calculations within the relativistic one-step model of photoemission show that these effects should be observable in ‘real’ systems. This is demonstrated to be the case for Cu films on fcc-Co(001).     

Temperature dependent quantum well state on Cu(1 1 0)(2 × 1) striped surface studied by angle resolved photoelectron spectroscopy

We have investigated the temperature dependence of angle resolved photoelectron spectroscopy for the lateral quantum well states (QWS) on the striped Cu(1 1 0)(2 × 1)O surface. For the striped surface with oxygen coverage of 0.25 ML, we have successfully observed two discrete levels along a perpendicular direction to the stripes in the surface Brillouin zone, which is generated by quantization of the Shockley surface state. We have found that the relative photoelectron intensity of the two discrete levels depends on the temperature. The photoelectron intensity tends to concentrate on the ground level of the QWS with decreasing temperature. Our investigation indicates that the electron population of each quantum well level depends on the temperature.     

Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1 1 1)

The interaction between the metallic film/island and the semiconductor substrate is important to the electronic properties of metallic nanostructure grown on semiconductor substrate. Here, we report a series of comparison experiments to investigate the effect of doping concentration of Si substrates on the quantum well state (QWS). Using scanning tunneling microscopy, we observed that the apparent QWS energy positions show a strong dependence on the substrate used and on the sample temperature. Further experimental results by varying the height of scanning tunneling microscope tip over the Pb island uncovered that the observed apparent QWS energy position changes mainly come from the partial bias voltage drop on the combined resistance of the Pb wetting layer and the substrate, which is comparable with the vacuum tunneling resistance at low temperatures.     

Quantum oscillations in Pb/Si (111) heterostructure system

This paper summarizes our recent work on the study of quantum size effects (QSE) and novel physical properties of the Pb/Si (111) heterostructure. Two different types of samples were investigated. One is wedge-shaped Pb islands, and the other is atomically flat Pb thin films. With scanning tunneling microscopy (STM) manipulation, we observed an intriguing morphology dynamics of the islands that swings between two extreme energy states, like that in a classical pendulum. We show that the dynamics is a result of the competition between the QSE and the classical step free energy minimizing effect. For the second type of the samples, the QSE is studied in terms of thickness-dependent film stability, electronic structure and physical properties by using STM, angle-resolved photoemission spectroscopy (ARPES) and transport measurement. The results consistently reveal the formation of quantum well states (QWS) due to electron confinement in the films. This size effect could greatly modify the electronic structure near the Fermi level and lead to quantum oscillations in superconductivity, electron-phonon coupling and thermal expansion. The work unambiguously demonstrates the possibility of quantum engineering of physical properties of thin films by exploiting well-controlled and thickness-dependent QSE.     

Optical coherent transient effects in semiconductor quantum wells exhibiting a two-hole species valence band

The paper deals with the detailed theoretical investigation of optical coherent transient processes in a narrow direct gap semiconductor quantum well structure (QWS), duly irradiated by a near band gap resonant ultrashort pulsed laser with moderate excitation intensity. The photoinduced band-to-band electronic transitions are considered from both the heavy-hole (hh) and light-hole (lh) valence bands to the lowest (1s) exciton state below the fundamental absorption edge. Since the hole populations in both hh and lh bands are nontrivial in the case of the transverse plane in a QWS, we have recognized that the hh and lh excitons participate in photoinduced transitions. The photoinduced electron density is chosen to be less than the Mott density such that various many-body processes, otherwise significant, can be neglected. The well-established time-dependent perturbation treatment of the semiconductor Bloch equations has been followed to calculate the induced polarization as well as the differential transmission spectra. We find from the numerical estimates made for a GaAs/AlGaAs single QWS shined by a femtosecond pulsed Ti : Sapphire laser that the transmission characteristics of the coherent transient processes are dominated by the lh species in the QWS. Rabi oscillation and Stark splitting as calculated for the two-hole species QWS agree qualitatively very well with recent experimental observations.     

Thermal stability of atomically flat metal nanofilms on metallic substrates

By means of variable temperature scanning tunneling microscope we studied the morphology and electronic structure of Pb films grown on Cu(1 1 1). Due to the spatial confinement of electrons, the islands display quantized energy levels. At 300 K, Pb forms 3D nanostructures with magic heights, that correspond to islands having a quantum well state (QWS) far from the Fermi energy. Below 100 K Pb grows in a quasi-layer-by-layer fashion. The QWS that develop in the films determine their total energy and, accordingly, their thermal stability. Films of particularly magic thickness are stable upon heating to 300 K.     

InAs/GaSb量子阱中太赫兹光电导特性

太赫兹技术由于具有重大的科学价值及应用前景而引起了广泛关注,其核心问题是性能优异的室温太赫兹辐射源和探测器研究.本文用半经典的玻尔兹曼方程方法研究了In As/Ga Sb量子阱系统中载流子对电磁场的响应,运用平衡方程方法求解玻尔兹曼方程得到了量子阱系统中的光电导,系统地研究了量子阱结构对光电导的影响,揭示了在该量子阱系统中光电导产生的物理机制.研究发现,量子阱结构主要通过调节载流子的能级、浓度和波函数的耦合影响光电导,对称性较好的量子阱结构(8 nm-8 nm)的光电导信号更强,其峰值落在太赫兹区(0.2 THz),并且在低温下器件的性能较好,温度升高则吸收峰略有降低,且光电导峰值发生红移.研究结果表明该量子阱系统可以用作室温太赫兹光电器件.     

Morphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state

Epitaxial ultra-thin Ag films grown on Cu(111) have been investigated by angle-resolved photoemission spectroscopy. The thickness dependence of the binding energy for the Shockley surface state at 300 K could be determined accurately in films up to 5 ML thick. Furthermore, we observe drastic changes in the film morphology after annealing to 450 K. Spectral modifications in the shape of the quantum-well states (QWS), characteristic for these ultra-thin silver films, prove that the surface morphology is homogeneous. The photoemission spectra also indicate that the silver film bifurcates to form a film exhibiting two distinct film thicknesses. For all levels of silver coverage, we identify surface regions that are 2 ML thick, while the thickness of the remaining surface depends on the amount of deposited silver. The almost purely Lorentzian line-shape of the spectral features corresponding to the two different surface regions show that both surface areas are atomically flat. PACS 68.55.Jk; 73.20.At; 73.21.Fg; 79.60.Dp     

量子相干态的二维电子光谱测量的原理、应用和发展

二维电子光谱是一种同时具有高的时间分辨率和光谱分辨率的非线性光谱学方法.它不仅可以对凝聚相分子复杂动力学过程进行直接测量,还可以测量不同电子态、电子态-振动态之间的量子相干过程.2007年,Flemming课题组利用二维电子光谱于低温77 K的条件下在捕光天线蛋白Fenna-Matthews-Olson中发现了能量传递过程存在量子相干现象.尽管后续的实验研究表明,该体系中实验观测到的量子相干现象不可能是由单纯的电子态相干引起的,然而这一实验现象的报道极大地激发了人们对天然或人工模拟光合系统中存在量子相干传能途径的探索,目前还是一个相当活跃的研究领域.本文旨在通过介绍二维电子光谱学原理、装置及其在光合作用体系能量传递中量子相干现象的应用,使二维电子光谱这种实验方法能够在更多的研究领域得以普及与推广.     

Observation of extrinsic surface states on (112̄0) CdS

Surface states have been detected by surface photovoltage spectroscopy on (112̄0) CdS surfaces subjected to various treatments in UHV and studied by Auger electron spectroscopy and LEED. All surface electronic features can be related to chemical contamination or lattice nonstoichiometry. Energy level spectra of air-exposed CdS exhibit a set of discrete states due to adsorption of C, O, and Cl. Ion bombardment generates a pair of states 2.35 eV and ~0.8 eV above the valence band edge due to S interstitials and vacancies, respectively. Oxygen adsorption produces a broad continuum of states. Changes in surface atomic order show no direct effect on these electronic features. No intrinsic surface states, filled or empty, are observed by surface photovoltage spectroscopy on clean, stoichiometric (112̄0) faces of CdS.     

Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)

The electronic structure of thin films of the organic semiconductor copper tetraphenylporphyrin (CuTPP) has been studied using synchrotron radiation-excited resonant soft X-ray emission spectroscopy (RSXE), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray photoemission spectroscopy (XPS). The C and N partial density of states for both the valence and conduction band electronic structure has been determined, while XPS was used to provide information on the chemical composition and the oxidation states of the copper. Good agreement was found between the experimental measurements of the valence and conduction bands and the results of density functional theory calculations.     

Dopant-induced nanoscale electronic inhomogeneities in Ca(2-x)Sr(x)RuO4

Ca(2-x)Sr(x)RuO4 single crystals with 0.1 < or = x < or = 2.0 have been studied systematically using scanning tunneling microscopy (STM) and spectroscopy, low-energy electron diffraction, and angle resolved photoelectron spectroscopy (ARPES). In contrast with the well-ordered lattice structure, the local density of states at the surface clearly shows a strong doping dependent nanoscale electronic inhomogeneity, regardless of the fact of isovalent substitution. Remarkably, the surface electronic roughness measured by STM and the inverse spectral weight of quasiparticle states determined by ARPES are found to vary with x in the same manner as the bulk in-plane residual resistivity, following the Nordheim rule. For the first time, the surface measurements--especially those with STM--are shown to be in good agreement with the bulk transport results, all clearly indicating a doping-induced electronic disorder in the system.     

Optical spectroscopy of electronic surface states

In this paper a number of optical spectroscopic methods for investigating surface electronic structure are discussed, including reflectance techniques, ellipsometry, surface photoconductivity and surface photovoltage spectroscopy. In addition to electron scattering techniques and UV-photoemission, optical spectroscopic methods have contributed much in recent times to the understanding of electronic surface states on solids. A discussion and comparison is given of the nature and significance of information obtained by these methods and exemplary experimental results are presented to illustrate the contribution of the optical techniques to the present knowledge about surface states. The relation between information obtained from optical measurements and electron spectroscopy is considered.     

Temperature dependence of photo-hole decay in 4d derived Quantum Well States in monolayer Ag(111) films on Pd(111), Ni(111), Mo(110) and Cu(100)

We present experimental data on the temperature dependence of photo-hole decay obtained by Angle Resolved Photoemission (ARPES) measurements from 4d derived Quantum Well States (QWS) on Ag(111) monolayer films deposited on Pd(111), Ni(111), Mo(110) and Cu(100). We have found a significant increase of the Ag 4d electron–phonon (e-ph) coupling strength with respect to the bulk values. The increase is attributed to different mechanisms that are associated with the interaction of the Ag film with under laying substrate. It is proposed that the main channels that contribute to the increased e-ph coupling originate from the inter-band transitions that involve bulk states of the substrates.     

软X射线辐照引起的InP表面电子态变化

采用X光电子能谱(XPS)和紫外光电子能谱(UPS)研究了软X射线辐照InP所产生的表面电子态的变化．实验结果表明,软X射线的照射,对In原子影响不大,而对P原子影响很大．分析了InP的辐照效应机理,解释了产生上述影响的原因. 关键词：     

Photoemission from 2D metallic quantum wells

In this paper we briefly review electronic properties of quantum well states in metallic films deposited on metallic substrates. We discuss the photoemission spectroscopy from QW states by addressing the questions of their energy, in-plane dispersion, dependence on supporting structure, hybridization with substrate bands, and many-body effects with accent on electron–phonon coupling.     

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS.