Influence of magnetic field on the interlayer interaction in (Co/Si/Gd/Si)n films

A singularity sensitive to the external magnetic field was observed in the temperature dependences of the magnetization of multilayer (Co/Si/Gd/Si)₂₀ films in the vicinity of compensation temperature. Possible mechanisms responsible for the unusual behavior of the magnetization are discussed.     

Magnetic and electric properties of (Fe,Co)/(Si,Ge) multilayers

We review selected results concerning the interlayer exchange coupling in Fe/Si _x Fe_1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.     

Enhancement of magnetic properties of Co/Pd multilayered perpendicular magnetic recording media by using Pd/Si dual seedlayer

Effects of the introduction of a Pd/Si dual seedlayer on the microcrystalline structure and magnetic properties of [Co/Pd]_n multilayered perpendicular magnetic recording media were investigated. The Pd/Si dual seedlayer was composed of a Pd upper seedlayer and a Si under seedlayer. The Pd upper seedlayer with a thickness of up to 10 nm markedly increased the coercivity of [Co/Pd]_n multilayered media in the direction perpendicular to the film surface. The highest coercivity of 7.8 kOe was obtained for the [Co/Pd]₁₀ medium with a Pd (10 nm)/Si (100 nm) dual seedlayer. The Pd upper seedlayer not only facilitated the formation of regular interfaces between the Co and Pd layers, but also reduced the thickness of the deteriorated initial layer in the [Co/Pd]_n multilayer, resulting in enhancement of the magnetic anisotropy field. The [Co/Pd]_n multilayered medium with the Pd/Si dual seedlayer exhibited weak intergranular exchange coupling between [Co/Pd]_n grains, which led to excellent read–write characteristics.     

Spin-valve magnetoresistive structures based on Co/Tb multilayer films

The effect of the layer thickness on the magnetic properties of {Co/Tb}_n, {Co/Tb}_n/Co, and {Co/Tb}_n/Co/Cu/Co multilayer films is studied. The dependence of the hysteresis and magnetoresistive properties of {Co(1 nm)/Tb(1 nm)}_n/Co(5 nm)/Cu(L _Cu)/Co(5 nm) structures on the thickness of the {Co/Tb}_n layer and copper spacing are obtained. The feasibility of spin-valve structures based on {Co/Tb}_n multilayer films with in-plane anisotropy is demonstrated.     

Magnetism of Co layers in a Co/Si multilayer film

The magnetic properties of Co/Si multilayer films produced through rf ion sputtering were studied in the temperature range 4.2–300 K. The dependences of the spontaneous magnetization and hysteresis characteristics of the films on the thicknesses of the magnetic layers and nonmagnetic spacers are established. It is shown that these dependences are determined to a large extent by interlayer interfaces, in which the effective magnetic moment of the Co atoms and the exchange interaction decrease and magnetic-anisotropy dispersion arises. A probable cause of the interface formation is interlayer mixing (which is estimated to penetrate to a depth of 15 Å) and the strong effect of Si on the Co electronic structure.     

Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

Co(0 0 0 1)_hcp/Fe(1 1 0)_bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO₃(1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0)_bcc soft magnetic layer grew epitaxially on SrTiO₃(1 1 1) substrate with two type variants, Nishiyama–Wasserman and Kurdjumov–Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1)_hcp interlayer, while hcp-Co layer formed on Au(1 1 1)_fcc or Ag(1 1 1)_fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Magnetic Properties of Fe/Ni and Fe/Co Multilayer Thin Films

In this work, the magnetic and transport properties of Fe/SiO₂/Ni and Fe/SiO₂/Co multilayers grown on Si/SiO₂ substrates have been studied. The samples have been prepared by two-stage deposition process. In the first stage, Fe layer and SiO₂ interlayer of both samples are grown by ion beam deposition technique at room temperature. Then the samples are taken out to ambient atmosphere and loaded into a pulse laser deposition (PLD) chamber. Prior to the deposition of top layer, the samples are cleaned by annealing at 150 °C. In the second stage, Ni (or Co) layer is prepared by PLD technique at room temperature. The thickness of deposited layers has been measured by Rutherford back scattering (RBS). Magnetic properties of ferromagnetic bilayers have been investigated by room-temperature ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) techniques. Standard four-point magneto-transport measurements at various temperatures have been performed. Two-step switching in the in-plane hysteresis loops of Fe/SiO₂/Ni and Fe/SiO₂/Co samples is observed. A crossing in the middle of hysteresis loops of both samples points to a weak antiferromagnetic interaction between the magnetic layers of the stacks. Saturation magnetization values have been obtained from the VSM measurements of samples with DC magnetic field perpendicular to the films surface. Magneto-transport measurements have shown the predominant contribution of anisotropic magnetic resistance both at room and low temperatures. FMR studies of Fe/SiO₂/Ni and Fe/SiO₂/Co samples have revealed additional non-uniform (surface and bulk SWR) modes, which behavior has been explained in the framework of the surface inhomogeneity model. An origin of the antiferromagnetic interaction has been discussed.     

Effect of Ni interlayer on stress level of CoSi2 films in Co/Ni/Si(1 0 0) bi-layered system

The effect of Ni interlayer on stress level of cobalt silicides was investigated. The X-ray diffraction patterns (XRD) show that low temperature formation of Co_1−xNi_xSi₂ solid solution was obtained while Ni interlayer was present in Co/Si system, which was confirmed by Auger electron spectrum (AES) and sheet resistance measurement. XRD was also used to measure the internal stress in CoSi₂ films by a 2θ_ψ − sin²ψ method. The result shows that the tensile stress in CoSi₂ films evidently decreased in Co/Ni/Si(1 0 0) system. The reduction of lattice mismatch, due to the presence of Ni in Co_xNi_1−xSi₂ solid solution, is proposed to explain this phenomenon.     

XMCD studies of magnetic polarization at Mo atoms in CoMo alloy and magnetically coupled Co/Mo multilayers

Magnetic polarization of Mo atoms in Co₉₆Mo₄ alloy film and Co/Mo multilayered structures has been studied by X‐ray magnetic circular dichroism. Samples with Mo spacers of two different thicknesses (0.9 nm and 1.8 nm) were investigated. Mo atoms receive a magnetic moment of ?0.21μ_B in the alloy. In the multilayer with the thinner Mo spacer (d_Mo = 0.9 nm) the magnetic moment is much smaller (?0.03μ_B). In both cases the measured induced moment at the Mo site is oriented antiparallel to the moment at the Co atoms. The presence of the induced moment in the Mo spacer coincides with antiferromagnetic coupling between the Co component slabs. In contrast, neither measurable induced moment at the Mo site nor interlayer coupling between the Co layers has been found for the multilayer with the thicker Mo spacer. Possible mechanisms of the coupling associated with the induced moment are discussed in detail.     

Grain size reduction and recording performance improvement by using NiW as a partial interlayer in CoCrPt/SiO2 recording medium

We report the effect of NiW, as an interlayer to partially replace Ru, on the microstructure, magnetic properties, and recording performance of CoCrPt/SiO₂ perpendicular recording media. It was found that the full width at half maximum of the rocking curves of the Co (0002) peak changed little with NiW thickness up to 10 nm. However, further increase of NiW thickness caused a larger c-axis dispersion. The grain size of the CoCrPt/SiO₂ recording layer was reduced from 10.9±1.8 nm for the films without NiW to 7.7±1.5 nm for films with 10-nm NiW as a partial interlayer. The coercivity, H _c, nucleation field, H _n, and the reverse overwrite, Rev_OV, of the CoCrPt/SiO₂ layer did not change much (less than 15%) with increased NiW thickness. However, it did affect the switching field distribution of the CoCrPt/SiO₂ layer (more than double). The recording performance was improved by using NiW as a partial interlayer, which was mainly attributed to the reduced grain size.     

Magnetic anisotropy of Co/Cu/Co films with indirect exchange coupling

The effect of isothermal annealing on the magnetic anisotropy, bilinear and biquadratic exchange coupling energies, and domain structure of Co/Cu/Co trilayer fiilms with d_Co=6 nm and d_Cu=1.0 and 2.1 nm prepared by magnetron sputtering has been studied. It is shown that, under isothermal annealing, the biquadratic coupling energy decreases by more than an order of magnitude in films with d_Cu=1.0 nm and increases in films with d_Cu=2.1 nm. The fourth-order magnetic anisotropy is shown to be related to the existence of biquadratic exchange energy.     

The influence of Co doping on the dielectric, ferroelectric and ferromagnetic properties of Ba0.70Sr0.30TiO3 thin films

Ba_0.70Sr_0.30TiO₃ (BST) thin films doped by Co (BSTC) are fabricated by sol-gel method on a Pt/Ti/SiO₂/Si substrate. A strong correlation is observed among the microstructure, dielectric, ferroelectric, ferromagnetic properties and Co concentration. The dielectric constant of BST thin films can be tailored from 343 to 119 by manipulating the Co concentration. The dielectric loss of BSTC thin films are still kept below 0.020 and the tunability is above 30% at a dc-applied electric field of 500 kV/cm. With increasing Co doping up to 10 mol%, the coexistence of ferromagnetism and ferroelectrics is found. Suitable dielectric constant, low-dielectric loss, and high tunability of this kind of thin films can be useful for potential tunable applications.     

Polarized neutron reflectometry from the interface of the heterostructures SiO2(Co)/Si and SiO2(Co)/GaAs

Polarized neutron reflectometry is used to investigate SiO₂(Co) granular films (70 at% of Co nanoparticles in SiO₂ matrix) deposited on Si and GaAs substrates. The aim of the study is to compare magnetization depth profiles in two systems: in SiO₂(Co)/GaAs heterostructure which shows at room temperature giant injection magnetoresistance (IMR) with the system SiO₂(Co)/Si which reveals almost no IMR effect. We found that at room temperature and at the same value of external magnetic field mean magnetization in the SiO₂(Co)/GaAs sample is much higher than in the case of SiO₂(Co)/Si. We also demonstrate that magnetic scattering length density, and hence, magnetization profile strongly depends on the substrate. We show that SiO₂(Co)/Si heterostructure is ferromagnetically ordered within the temperature range between 120 and 460 K what could explain a weak IMR.     

Effect of the layer thickness on the magnetic properties and structure of terbium in (Tb/Ti)n and (Tb/Si)n multilayer films

The bulk and surface structures and the magnetic properties of Tb layers in (Tb/Ti)_n and (Tb/Si)_n multilayer films are studied experimentally. As the magnetic layer thickness decreases, Tb becomes amorphous. Along with the amorphization, the magnetic ordering temperature declines and the temperature range of magnetic hysteresis shifts. In terms of the ZFC-FC approach, this shift means crystalline magnetic anisotropy breaking. The material of nonmagnetic spacings between the Tb layers plays a certain role in these changes.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Silicide formation in bilayer ultrathin iron and cobalt films on silicon

The processes that occur in ultrathin (up to 1 nm) Fe and Co layers during deposition onto the Si(100)2 × 1 surface in various sequences and during annealing of the formed structures to a temperature of 400°C are studied. The elemental and chemical compositions of the films are analyzed by in situ high-resolution X-ray photoelectron spectroscopy using synchrotron radiation, and their magnetic properties are determined using the magnetic linear dichroism effect in the angular distribution of Fe 3p and Co 3p electrons. It is shown that, when iron is first deposited, the formed structure consists of the layers of FeSi, Fe₃Si, Co-Si solid solution, and metallic cobalt with segregated silicon. The structure formed in the alternative case consists of the layers of CoSi, Co-Si solid solution, Co, Fe-Si solid solution, and Fe partly covered by silicon. All layers (apart from FeSi, CoSi) form general magnetic systems characterized by ferromagnetic ordering. Annealing of the structures at temperatures above 130dgC (for the Co/Fe/Si system) and ～200°C (for Fe/Co/Si) leads to the formation of nonmagnetic binary and ternary silicides (Fe _x Co_{1 ? x} Si, Fe _x Co_{2 ? x} Si).     

溅射制备的Co/V多层膜微观结构特征与铁磁共振研究

研究了用射频磁控溅射方法制备的［Co(1.5nm)/V(d_V)］₂₀(0.5nm≤d_V≤4nm)多层膜的结构和磁性.用X射线衍射、透射电子显微镜、高分辨率透射电子显微镜等手段对其结构的分析,表明它们层状周期结构良好,沿膜的生长方向具有fcc Co(111)和bcc V(110)织构,且是由小的柱状晶粒构成的多晶薄膜.界面一定程度的合金化,使其成为成分调制周期结构,也是它们的一个结构特征.由其铁磁共振谱计算得到较小的g因子和4πM_{e 关键词：}     

Si-Al2O3复合薄膜的室温铁磁性

在Si-Al₂O₃复合薄膜中观察到室温铁磁性.Si的体积百分比为15 %的Si-Al₂O₃复合薄膜的磁性最强.Si的含量影响样品的磁有序,在样品中观察到了明显的磁畴.在不同气氛下,对样品进行快速热退火.退火样品的磁性测试结果的差别表明氧空位不是样品铁磁性的主要来源.我们认为铁磁性来源于Si与Al₂O₃基质界面之间的缺陷的磁耦合.改变Si的含量可以改变缺陷密度,从而控制铁磁耦合强度. 关键词： 2O₃薄膜')" href="#">Al₂O₃薄膜 室温铁磁性 掺杂 交换相互作用     

Gd2Co2Al电子结构和磁性的第一性原理研究

从第一性原理出发，在局域自旋密度近似(LSDA)和LSDA+U(在位库仑能)近似下，采用FPLAPW密度泛函能带计算方法研究了Gd₂Co₂Al的电子结构和磁性. 从平均场近似出发，估算了体系的居里温度，并分析了导致体系居里温度偏低的原因.研究结果显示Gd₂Co₂Al为金属导体，其强的铁磁性的提供者主要是Gd，且Co的局域铁磁性是不稳定的. 基于LSDA近似的计算表明Gd₂Co₂关键词： 稀土过渡族金属间化合物 密度泛函理论 电子结构 磁性性质