Surface photovoltage and photoelectron spectra of GaP

Surface photovoltage (SPV) and photoelectron spectra (PES) of crystalline n-GaP wafers have been studied at 300 K. The magnitude of the surface potential (V_s) decreases in the presence of photons with energy more than the band gap, however the magnitude of V_s increases in the presence of photons with sub band gap energy. The SPV spectrum is helpful in understanding the rigid shift of PES spectra of n-GaP wafers towards higher kinetic energy in the presence of secondary white light from a tungsten lamp.     

二氧化铬阴离子光电子能谱的理论研究

凭借密度泛函理论,采用不同基组对中性分子CrO2的基态((X)3B1)以及阴离子CrO1-的基态((X)4B1)进行几何优化和振动频率分析;应用量化计算得到的力常数及结构和光谱参数,基于推得的两维四模Franck-Condon重叠积分的代数表示,对CrO2((X)3B1)-CrO2-((X)4B1)的光脱附过程进行Franck-Condon分析和光谱模拟,理论上得到光电子能谱的谱线相对强度及振动结构分布,理论谱与实验测得的二氧化铬阴离子光电子能谱达到一致,并对光电子能谱的振动结构进行归属及热带分析;另外,在光谱模拟过程中通过迭代Franck-Condon分析过程,推得CrO2-((X)4B1)与CrO2((X)3B1)平衡几何结构之差:△R(Cr-O)=0.05A,△∠(O-Cr-O)=12°.     

Examination of two new low-lying electronic states of SiS observed in chemiluminescent flame spectra

Diatomic silicon sulfide molecules have been produced in the chemiluminescent reaction of silicon atoms with OCS. Spectra of the resulting flame consist mainly of two new band systems in the region 350–400 and 385–600 nm. These systems have been assigned as b ³Π_r-X ¹Σ⁺ and a ³Σ⁺-X ¹Σ⁺ on the basis of band structure, spin-orbit splitting, molecular constants, and comparison with chemiluminescent spectra of isovalent molecules. Vibrational assignments were made with the help of the isotope effect and vibrational constants were obtained. Rotational structure was observed in some a-X bands and a partial analysis yielded an approximate rotational constant, B 0.247 ± 0.007 cm⁻¹, for the a ³Σ⁺ state. Franck-Condon factors, calculated for the a-X system, are shown to fit the general trend of the intensity distribution. Irregularities in spin-orbit splitting and in relative intensities of the spin-orbit components of the b ³Π-X ¹Σ⁺ system were observed and an attempt is made to explain them in terms of interactions with neighboring states. Addition of active nitrogen to the flame was shown to greatly increase the intensity of the b-X system relative to the a-X system. Constants (in cm⁻¹) obtained for the new state are: a³σ⁺: T_e=24 582.1 ± 1.3, ω_e=503.8±1.0, ω_ex_e=1.86±0.21b³σ⁺: T_e=27 314.5 ± 2.2, ω_e=619.4±2.0, ω_ex_e=5.75±0.52b³σ⁺: T_e=27 407.9 ± 1.1, ω_e=524.3±1.2, ω_ex_e=3.97±0.28     

Resolved fluorescence spectra of NiH. Electronic structure,electronic energy transfer,and the Zeeman effect in low-lying states

Fourier transform spectra of collisionally induced fluorescence following isotopically selective laser excitation of NiH at ～550?nm have located an excited Ω?=?1/2 state of NiH lying 17900?cm^?1 above the electronic ground state. This is identified as v?=?0 of a ²Π_1/2 state originating from an Ni⁺ 3d⁸4s^{1 2}F configuration. Emission from this Ω′?=?1/2 state occurs predominantly to v″?=?0 and 1 of the ²Σ⁺ and W₂ ²Π_1/2 ligand field states, locating elusive f parity levels of W₂ ²Π_1/2 up to 5600?cm^?1 above the first rotational level of the electronic ground state, X ₁ ²Δ_5/2. Collisionally induced fluorescence following laser excitation at lower energies has also been recorded in the presence of a magnetic field (0.7–1?T), at Doppler limited resolution. Effective Landé factors g _J for rotational levels of the v?=?0 and 1 levels of the low-lying Ω″?=?5/2 and 3/2 components of the ²Δ and ²Π states of NiH have been derived from partially resolved Zeeman patterns. About 1600 transitions recorded in field-free conditions have been reduced to term energies relative to the lowest level of the ground state. They confirm strong spin-orbit mixing between the low-lying ligand-field states.     

NaCCH自由基低能电子态的理论研究

采用CASSCF/CASPT2方法研究了NaCCH自由基的低能电子态,在C2v对称性下给出了NaCCH自由基9个低能激发态的几何、组态、CI系数、振子强度、垂直激发能和绝热激发能.研究结果表明,NaCCH自由基的基态X1Σ+几何和转动系数与实验值是一致的;谐振频率与其他理论方法得到的值也符合的很好;HOMO和LUMO轨道的能量间隔为3.80eV,对应着13Σ+的绝热激发能;除13Π外,其它低能激发态均是稳定状态;基态到三重态是自旋禁阻的.     

Synthesis of GaP nanowires with Ga2O3 coating

Zinc-blende-type face centred cubic structure GaP nanowires with Ga₂O₃ coating were synthesized by heating Ga₂O₃ and red phosphorus powder with the assistance of NH₃ and Ar at 1323 K. The GaP/Ga₂O₃ nanowires have a uniform size distribution with diameters ranging from tens of nm to hundreds of nm and lengths up to several micrometres. The inner GaP nanowires have almost a single-crystal structure with twin defects and have the 111 direction as preferential growth direction. Outer Ga₂O₃ layers were polycrystalline and acted as a protection layer for the inner GaP nanowires to permit their use at high temperature. The GaP/Ga₂O₃ structure may have potential applications in future nanodevice design. PACS 81.07.Bc; 81.16.Pr     

The electronic structure,x-ray photoelectron and emission spectra of YOF

The results of electronic structure calculations for YOF are presented, making use of Xα-DVM together with experimental X-ray photoelectron and emission spectra for this compound. Three versions of calculations have been performed, depending on the relation between oxygen and fluorine charges in the [YO₄F₄] cluster. The interpretation of experimental spectra is carried out on the basis of these calculations.     

Further investigations of the low-lying electronic states of AsO~+ radical

The high level quantum chemistry ab inito multi-reference configuration interaction （MRCI） method with large V5Z basis set is used to calculate the spectroscopic properties of the 15 A-S electronic states （X1∑＋, A I П, 1 △, 1 ∑, 3∑＋, 3П, 3△, 3△ , 5∑＋, 5П, 5△, 1П （II）, ofAsO＋ radical correlated to the dissociation limit As＋（3pg） ＋ O（3pg） and As＋（IDg） ＋ O（1Dg）. In order to obtain better potential curves and more accurate spectroscopic properties, the Davidson modification is taken into account. With the potential energy curves （PECs） determined here, vibrational levels G（v） and inertial rotation constants Bu are computed for all the bound electronic states when the rotational quantum number J equals zero （J = 0）. Except for the states X1∑＋, A1П , it is the first time that the multi-reference configuration calculation has been used on the 13 A-S electronic states of the AsO＋ radical. The potential energy curves of all the A-S electronic states are depicted according to the avoided crossing rule of the same symmetry. Spin-orbit coupling effect （SOC） is introduced into the states X1 ∑＋, A1 П, 3П to consider its effects on the spectroscopic properties. Transition dipole moments （TDMs） from A1П 1, 3 П1 states to the ground state X1∑0＋ are predicted as well.     

Theoretical study of the electronic ground states and low-lying singlet excited states of thiophene-based spirofluorenes

The electronic structures and optical properties of oligothiophene substituted spirofluorenes are investigated theoretically with semi-empirical quantum chemical calculations. A theoretical investigation of the interaction between two perpendicular π-systems of various oligothiophene substituted spirofluorenes is conducted. The results demonstrate that the interaction between two perpendicular branches is reduced by oligothiophene substitutions. Photoexcitation induced relaxation is mainly located on one of...     

An ab initio investigation of the low-lying electronic states of Bell

Potential energy curves （PECs） for the ground state （X2∑＋） and the four excited electronic states （A2∏, B2∏, C2∑＋, 4∏） of a Bell molecule are calculated using the multi-configuration reference single and double excited configuration interaction （MRCI） approach in combination with the aug-cc-pVTZ basis sets. The calculation covers the internuclear distance ranging from 0.07 nm to 0.70 nm, and the equilibrium bond length Re and the vertical excited energy Te are determined directly. It is evident that the X2∑＋, A2∏, B2∏, C2∑＋ states are bound and 4∏ is a repulsive excited state. With the potentials, all of the vibrational levels and inertial rotation constants are predicted when the rotational quantum number J is set to be equal to zero （J = 0） by numerically solving the radial SchrSdinger equation of nuclear motion. Then the spectroscopic data are obtained including the rotation coupling constant w e, the anharmonic constant WeXe, the equilibrium rotation constant Be, and the vibration-rotation coupling constant ae. These values are compared with the theoretical and experimental results currently available, showing that they are in agreement with each other.     

UV angle resolved photoelectron spectra of fluoro and chloromethane using synchrotron radiation

Photoelectron asymmetry parameters (β) and partial photoionization cross-sections have been measured for ionization from the molecular orbitals of CH₃F and CH₃Cl using synchrotron radiation in the photon energy range 19 to 115 eV. Cooper minima are observed in the β spectra of CH₃C1 for ionization from orbitals with Cl 3p character. Several shake-up bands observed in the F 2s and Cl 38 ionization energy region indicate a breakdown of the one-electron picture of ionization. The position and relative intensities of the satellite bands are compared with the results of Green's function calculations.     

Highly resolved electronic spectra and electronic structure of benzo[f]quinoxaline

Vibrational analysis of highly resolved phosphorescence (P), flourescence (F) and absorption spectra of benzo[f]quinoxaline (BQ) in Shpolskii matrices, at 77 K, was carried out. The spectra were dominated by phenanthrene-type fundamental vibrations. The appearance of several out-of-plane (op) modes in the P spectrum as well as the P lifetime, much shortened relative to that of the parent hydrocarbon, point to the proximity of the lowest n, π¹ and π, π¹ states of the BQ molecule. High activity of op modes in the F spectrum and complex structure of the absorption spectrum onset have been explained in terms of the pseudo-Jahn-Teller interaction between close-lying S₁ (π, π¹)and S₂(n, π¹) states.According to calculations of the BQ electronic structure, performed using a modified INDO CI method, the T₁(π, π¹)-T₂(n, π¹) and S₁(π, π¹-S₂(n, π¹) energy gaps are about 1200 and 700 cm^-1, respectively.     

Reflected electron-energy-loss spectra,differential inverse inelastic mean free paths,and angular resolved X-ray photoelectron spectra of a niobium sample

A technique for recovering the differential inverse inelastic mean free paths (DIIMFP) of electrons in Nb from the reflected electron energy loss spectra (REELS) at initial energies of 5 to 40 keV using a threelayer model of the sample surface is presented. The recovered DIIMFP are used for analyzing X-ray photoelectron spectra measured at different viewing angles. Comparison with experimental data is carried out.