High efficiency antireflection coating in MWIR region (3.6–4.9 μm) simultaneously effective for Germanium and Silicon optics

Antireflection coatings have critical importance in thermal imaging system working in MWIR region (3–5 μm) since optics of high refractive index materials are used. Germanium (Ge) and Silicon (Si) optics are used extensively in the MWIR thermal systems. In this paper a study has been carried out on the design and fabrication of multi-substrate antireflection coating effective for Germanium and Silicon optics in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because detector system used in MWIR region has a band selection filter effective in the same wavelength region and atmospheric transmission window in MWIR region is effective in 3–5 μm spectral band. Comprehensive search method was used to design the multilayer stack on the substrate. The coating materials used in the design were Germanium (Ge), Hafnium oxide (HfO₂) and Y-Ba-Fluoride (IR-F625). The fabrication of coating was made in a coating plant fitted with Cryo pump system and residual gas analyzer (RGA). The evaporation was carried out at high vacuum (2–6 × 10^?6 mbar) with the help of electron beam gun system and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 98.5% average transmission in 3.6–4.9 μm band for Germanium and Silicon optics. This work will be helpful in reducing the plant operation time, material and power consumption, as two different kinds of optics are simultaneously coated in a single coating cycle.     

Thorium free antireflection coating in MWIR region on Silicon optics

Most infrared transmitting optics have high refractive indices which in turn have high per surface reflection loss. So antireflection coating has very important role in increasing the transmission in the desired wavelength region. In this paper a study has been carried out on the design and fabrication of Thorium free antireflection coating effective for Silicon substrate in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because the detected system used in MWIR region has a band selection filter effective in the same wavelength region. Comprehensive search method was used to design the multilayer stack on Silicon substrate. The coating materials used in the design were Germanium (Ge) and Silicon dioxide (SiO₂). The fabrication of coating was made in a coating plant fitted with Cryo pump system and Residual Gas Analyzer. The evaporation was carried out at high vacuum (2–6 × 10–6 mbar) using Electron Beam Gun and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 96% average transmission in 3.6–4.9 μm band which withstood MIL-F-48616 environmental testing. This work provides an alternate antireflection coating on Silicon by replacing radioactive Thorium Fluoride, used as a coating material in most IR antireflection coating designs.     

Marine environment compatible antireflection coating with nanotop layer on silicon optics

Antireflection coating on silicon optics have crucial importance in thermal device working in 3.6–4.9 μm wavelength region. When the thermal device is used in marine environment, the optics face harsh saline weather condition compared to normal field environment. This deteriorates coated optics and to improve mechanical strength of the coating, a nanotop layer on the antireflection coating has been developed. In this paper a study has been carried out to improve marine environment compatibility by employing a nanolayer on the top of antireflection coating on silicon optics. Optimac synthesis method was used to design the multilayer stack on the substrate with germanium and IR-F625 as high/low refractive index respectively and the layer number was restricted to four layers. The top nanolayer was 60 ± 2 nm thick hafnium dioxide layer developed with ion assisted deposition (End–Hall) on the optics during coating process. The deposition of multilayer coating was carried out inside the coating plant fitted with cryo pump and residual gas analyzer. The evaporation was carried out at high vacuum (2–6 × 10⁻⁶ mbar) using electron beam gun and layer thicknesses were measured with crystal monitor. The average transmission achieved was 97% in the spectral band of 3.6–4.9 μm with a hardness of 9.7 GPa on the coated optics.     

Crystal growth,spectral and NMR studies of nonlinear optical crystal: L-valinium picrate

Organic nonlinear optical material, L-valinium picrate (LVP) was synthesized by slow evaporation solution growth method. The synthesized material was purified by repeated recrystallization. Single crystals of LVP were grown by slow evaporation method using water as solvent. The cell dimensions were obtained by X-ray diffraction study and crystal system was confirmed as monoclinic. The transmission spectrum of LVP was recorded by UV–Vis-NIR spectrometer in the range between 190 nm and 1100 nm which addressed the high percentage of transmission of the sample in the entire visible region. The presence of functional groups was studied by FT-IR analysis. The chemical environment of carbon and hydrogen in the proposed structure of LVP crystal was confirmed by FT NMR studies. The Kurtz-Perry powder SHG measurement was confirmed the frequency doubling of the crystal.     

Realization of periodic transmission filter based on a pair of cascaded long-period fibre gratings of different strength/wavelength position

Using high-intensity (560–650 GW/cm²) 264 nm 220 femtosecond laser pulses, we inscribed a periodic (comb) transmission filter in a photosensitive Ge/B-codoped fibre, based on a pair of long-period gratings of different strength/wavelength position. The irradiation conditions and grating parameters for the successful realization of the 24–28-nm-wide transmission filter in the region 1480–1580 nm with the fringe period of 1.7–3.1 nm and the fringe bandwidth of 0.8–1.3 nm were established.     

Performance improvement of ZnO/P3HT hybrid UV photo-detector by interfacial Au nanolayer

In this study, a hybrid ultraviolet (UV) photo detector comprising of hydrothermally grown highly oriented Zinc Oxide nanorod arrays (ZnO NRAs) and Poly(3-hexylthiophene-2,5-diyl) (P3HT) as an active layer was fabricated and characterized. These hybrid photo detectors demonstrated a high rectification ratio (∼117) and responsivity of 10.7 A/W at −2  V under incident light of wavelength 325 nm. Further to investigate the effect of surface plasmon property of metal nanoparticles on the performance of hybrid UV photo detectors, ZnO NRAs were capped with dc sputtered gold (Au) metal nanolayer (∼5 nm) at the ZnO-P3HT interface, prior to coating P3HT layer on top of it. It was found out that upon Au coating the absorption of the ZnO was enhanced partly in the ultraviolet and visible region. In consequence the rectification ratio and responsivity of the hybrid photo detector was enhanced drastically from 117 to 1167 and 10.7 to 17.7 A/W respectively. Interestingly the reduction in dark current was observed on Au coating and it was revealed that Au nanoparticles play a key role in enhancing the performance of the hybrid photo detectors.     

Color filters featuring high transmission efficiency and broad bandwidth based on resonant waveguide-metallic grating

A one-dimensional transmission color filter based on a resonant waveguide-metallic subwavelength grating was numerically investigated by employing rigorous coupled-wave analysis (RCWA) and genetic algorithm (GA). The hybrid numerical method is used to determine the optimal parameters (the grating period, filling factor, grating thickness, and waveguide thickness) of two waveguide-grating structures, namely a double-layer resonant waveguide-metallic grating and a triple-layer resonant waveguide-metallic grating. The optical responses of these structures are evaluated and compared in terms of the ideal transmission efficiency aiming at the central wavelengths of 645 nm, 546 nm, and 455 nm of red (R), green (G), and blue (B) lights, respectively, over the visible region (380–780 nm). The results show that the optical performance of the double-layer with silver grating achieves the highest transmission efficiency of 82% (R), 81% (G), and 66% (B); and the largest bandwidth of about 125 nm (R), 118 nm (G), and 85 nm (B). Compared with existing color filters, the proposed device not only obtains a higher transmission and broader bandwidth, but it also suppresses redundant spectral peaks and transmission sidebands.     

Physical properties of ZnSe thin films: Air and vacuum annealing evolution to buffer layer applications

In order to develop high efficiency solar cell device by replacing conventional hazardous CdS window layer by environmental friendly Zn-based buffer layer, ZnSe thin films of thickness 100 nm were grown on glass and ITO substrates employing electron beam evaporation technique followed by air and vacuum annealing at temperature 100 °C, 200 °C and 300 °C. As-grown and annealed films were subjected to characterization tools like XRD, UV-Vis spectrophotometer, SEM, EDS and source meter. Structural results reveal the amorphous phase, SEM images indicate uniform deposition without pin holes and EDS patterns confirm the deposition. Transmittance is observed to be high in visible region and band gap is found to change with temperature of the treatment and I-V measurements demonstrate ohmic nature. On the basis of optimized results, the films annealed at 200 °C in vacuum may be used as buffer layer to develop high efficiency Cd-based and CIGS thin film solar cells.     

Structural,optical and mechanical property analysis of magnesium sulphate admixtured l-Threonine: A novel optoelectronic material

l-Threonine is an important amino acid and famous due to their property of frequency conversion and electro optic modulation. Single crystals of magnesium sulphate admixtured l-Threonine was grown by slow evaporation technique. Good quality single crystal with dimension 58 × 5 × 10 mm³ was harvested after 60 days. The powder X-ray diffraction pattern of the grown crystal has been indexed. The optical transmission spectrum shows that the magnesium sulphate admixtured l-Threonine possess good optical transparency in the entire visible region with Ultra Violet cut-off wavelength at 250 nm. The presence of fundamental functional groups was identified by Fourier Transform Infra Red spectral analysis. The structure of the grown crystal was established using Fourier Transform-Nuclear Magnetic Resonance spectral analysis. The thermal behaviour of the crystal has been discussed by Thermal Gravimetric Analysis and Differential Thermal Analysis. Magnesium sulphate admixtured l-Threonine was characterized by Energy dispersive analysis of X-ray. The second harmonic generation efficiency of magnesium sulphate admixtured l-Threonine crystal is found to be same as that of potassium dihydrogen phosphate crystal.     

Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application

The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Δλ/ΔT = 1.6 nm/K. Quantum efficiency of 0.6–0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 μm.     

Room temperature photoluminescence property of Mo-doped In2O3 thin films

Mo-doped In₂O₃ thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10⁻⁴ Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm.     

Multi-wavelength metal-dielectric nonpolarizing beam splitters in the near-infrared range

A 21-layer multi-wavelength metal-dielectric nonpolarizing cube beam splitter was designed by use of an optimization method and theoretically investigated in the near-infrared range. The angular dependence of the reflectance and differential phases induced by reflection and transmission were presented. The simulation results revealed that the non-polarizing effect could be achieved for both the amplitude and phase characteristics at 1310 and 1550 nm. The differences between the simulated and the target reflectance of 50% are less than 2% and differential phases are less than 5°in the range 1300–1320 nm and 1540–1550 nm for both p- and s-components.     

Advanced multifunctional optical switch for multimode optical fiber networks

In this work, an advanced multifunctional optical switch based on multimode fibers is proposed. It can work as a 3 × 1 optical multiplexer/combiner, a 2 × 2 optical switch, a variable optical attenuator and a variable optical power splitter. All these functionalities can be developed in the same device without any hardware modification, only by using the proper ports and control electronics.The proposed switch has been developed for being used in the visible and near infrared wavelength range: 450–650 nm for optical fiber automobile applications, 650–850 nm for home broadband applications; and 850–1300 nm for multimode fiber access networks. Up to three different types of twisted nematic liquid crystal cells have been designed and fabricated for fulfilling these different wavelength ranges as part of the proposed device.The multifunctional switch has been implemented and experimentally tested. Crosstalk usually better than ? 15 dB at 532 nm, 660 nm and 850 nm, in any state has been measured. Switching is achieved at voltage levels of 4 Vrms. Fiber to fiber insertion losses when operating as a 2 × 2 optical switch, range from 10 to 15 dB within 200 nm wavelength range; with a non-optimized optics for collimation and coupling.     

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of ～30–90 nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-Å electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at ～8.3 eV (～150 nm) and surface guided modes at 3.88 eV (～320 nm), which are in visible/ultra-violet spectral regime above GaN bandgap of ～3.3 eV (～375 nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below ～3.5 eV to the spectral regime further beyond.     

A proposed organic Schottky barrier photodetector for application in the visible region

The fabrication and characterization of an organic photodetector (OPD) in the form of ITO coated glass/polycarbazole (PCz)/Al Schottky contact is reported. The device has been fabricated in our laboratory for the first time using the polymer synthesized by us. The device has been subsequently characterized in respect of electrical and optical properties in order to explore its potential for possible use as a detector in the visible region at 650 nm. It is observed that the detector exhibits a reasonably high value of peak detectivity (∼6 × 10⁶ cm Hz^1/2 W⁻¹) near zero bias voltage at V = 0.2 V.     

Design of the chirped Mo/Si multilayer mirror with SiC capping layer in extreme ultraviolet region

The design procedures were discussed in detail for a normal incident chirped Mo/Si multilayer mirror with Group Delay Dispersion (GDD) of ?3600 as² in the wavelength region of 13–17 nm. The GDD was calculated using an analytical approach by fitting the optical constants of the coating materials in the wavelength range of 12.8–17.2 nm, respectively. The final structure of the chirped mirror was obtained by using the simplex algorithm from the initial structure obtained by the genetic algorithm based on structure generated by a random generator. After considering the interfacial roughness and layers thickness deviation, the effects on the reflectivity and the GDD were discussed. It was found that the average reflectivity decreases from 5.98% to 4.22% and the average GDD decreases from ?3561.86 as² to ?3462.03 as², the vibration of GDD were larger than that of the reflectivity. The reflectivity was affected greatly by the 9th layer and the GDD was affected greatly by the 25th layer when each layer thickness changes ±0.2 nm. Compared with the GDD, the reflectivity was affected greatly by the layer thickness error.     

QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

Dual-wavelength investigation of laser-induced damage in multilayer mirrors at 532 and 1064 nm

Thin film beam splitters with high reflectivity at 532 nm and high transmittance at 1064 nm were deposited via reactive electron-beam evaporation with optimized parameters. The damage performance of the samples was investigated under irradiations of 532 nm laser only, 1064 nm laser only, and various combined laser fluences. The damages induced by the 1064 nm laser were primarily attributed to the initiators at the interface between the coatings and substrate. Under 532 nm laser irradiation only, two distinctive damage pits initiated by the submicron absorptive defects located at different coating depths and correlated to interfaces were observed. The damage effect under simultaneous irradiation in multilayer films was also investigated. The respective sensitive defects of the two lasers remained the precursors for causing damage. However, the dominant damage factors in simultaneous irradiation changed with the 1064 nm laser fluence, which also determined the coupling effect between the two lasers in terms of causing damage. Finally, correlative analysis methods were used to discuss the different coupling effects.     

Experimental study using optoacoustic spectroscopy (OAS) on spherical gold nanoparticles

In this paper a spectroscopic characterisation method based on the optoacoustic technique has been used to investigate the optical properties of two separate spherical gold nanoparticle (SGNP) solutions where an absorption peak located at 520 nm has been observed. This analysis has been carried out over the visible wavelength range from 410 to 650 nm using a Q-switched Nd:YAG pumped optical parametric oscillator (OPO). To verify the reliability of optoacoustic spectroscopy (OAS), the results obtained have been compared to those from more standard and limited spectrophotometer and reference collimated optical transmission schemes, where good agreement is shown. The experimental procedure presented here demonstrates the potential of this technique for integration along with optoacoustic imaging methods to identify physiological information for non-destructive in-vivo applications.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.