The key role of dislocation dissociation in the plastic behaviour of single crystal nickel-based superalloy with low stacking fault energy: Three-dimensional discrete dislocation dynamics modelling

To model the deformation of single crystal nickel based superalloys (SCNBS) with low stacking fault energy (SFE), three-dimensional discrete dislocation dynamics (3D-DDD) is extended by incorporating dislocation dissociation mechanism. The present 3D-DDD simulations show that, consistent with the existing TEM observation, the leading partial can enter the matrix channel efficiently while the trailing partial can hardly glide into it when the dislocation dissociation is taken into account. To determine whether the dislocation dissociation can occur or not, a critical percolation stress (CPS) based criterion is suggested. According to this CPS criterion, for SCNBS there exists a critical matrix channel width. When the channel width is lower than this critical value, the dislocation tends to dissociate into an extended configuration and vice versa. To clarify the influence of dislocation dissociation on CPS, the classical Orowan formula is improved by incorporating the SFE. Moreover, the present 3D-DDD simulations also show that the yielding stress of SCNBSs with low SFE may be overestimated up to 30% if the dislocation dissociation is ignored. With dislocation dissociation being considered, the size effect due to the width of γ matrix channel and the length of γ′ precipitates on the stress–strain responses of SCNBS can be enhanced remarkably. In addition, due to the strong constraint effect by the two-phase microstructure in SCNBS, the configuration of formed junctions is quite different from that in single phase crystals such as Cu. The present results not only provide clear understanding of the two-phase microstructure levelled microplastic mechanisms in SCNBSs with low SFE, but also help to develop new continuum-levelled constitutive laws for SCNBSs.     

Analysis of heterogeneous deformation and dislocation dynamics in single crystal micropillars under compression

The size dependent deformation of Cu single crystal micropillars with thickness ranging from 0.2 to 2.5 μm subjected to uniaxial compression is investigated using a Multi-scale Dislocation Dynamics Plasticity (MDDP) approach. MDDP is a hybrid elasto-viscoplastic simulation model which couples discrete dislocation dynamics at the micro-scale (software micro3d) with the macroscopic plastic deformation. Our results show that the deformation field in these micropillars is heterogeneous from the onset of plastic flow and is confined to few deformation bands, leading to the formation of ledges and stress concentrations at the surface of the specimen. Furthermore, the simulation yields a serrated stress–strain behavior consisting of discrete strain bursts that correlates well with experimental observations. The intermittent operation and stagnation of discrete dislocation arms is identified as the prominent mechanism that causes heterogeneous deformation and results in the observed macroscopic strain bursts. We show that the critical stress to bow an average maximum dislocation arm, whose length changes during deformation due to pinning events, is responsible for the observed size dependent response of the single crystals. We also reveal that hardening rates, similar to that shown experimentally, occur under relatively constant dislocation densities and are linked to dislocation stagnation due to the formation of entangled dislocation configuration and pinning sites.     

Influence of misfit stresses on dislocation glide in single crystal superalloys: A three-dimensional discrete dislocation dynamics study

In the characteristic $\gamma /\gamma \prime$ microstructure of single crystal superalloys, misfit stresses occur due to a significant lattice mismatch of those two phases. The magnitude of this lattice mismatch depends on the chemical composition of both phases as well as on temperature. Furthermore, the lattice mismatch of γ and $\gamma \prime$ phases can be either positive or negative in sign. The internal stresses caused by such lattice mismatch play a decisive role for the micromechanical processes that lead to the observed macroscopic athermal deformation behavior of these high-temperature alloys. Three-dimensional discrete dislocation dynamics (DDD) simulations are applied to investigate dislocation glide in γ matrix channels and shearing of $\gamma \prime$ precipitates by superdislocations under externally applied uniaxial stresses, by fully taking into account internal misfit stresses. Misfit stress fields are calculated by the fast Fourier transformation (FFT) method and hybridized with DDD simulations. For external loading along the crystallographic [001] direction of the single crystal, it was found that the different internal stress states for negative and positive lattice mismatch result in non-uniform dislocation movement and different dislocation patterns in horizontal and vertical γ matrix channels. Furthermore, positive lattice mismatch produces a lower deformation rate than negative lattice mismatch under the same tensile loading, but for an increasing magnitude of lattice mismatch, the deformation resistance always diminishes. Hence, the best deformation performance is expected to result from alloys with either small positive, or even better, vanishing lattice mismatch between γ and $\gamma \prime$ phase.     

Compliant interfaces: A mechanism for relaxation of dislocation pile-ups in a sheared single crystal

Discrete dislocation plasticity models and strain-gradient plasticity theories are used to investigate the role of interfaces in the elastic–plastic response of a sheared single crystal. The upper and lower faces of a single crystal are bonded to rigid adherends via interfaces of finite thickness. The sandwich system is subjected to simple shear, and the effect of thickness of crystal layer and of interfaces upon the overall response are explored. When the interface has a modulus less than that of the bulk material, both the predicted plastic size effect and the Bauschinger effect are considerably reduced. This is due to the relaxation of the dislocation stress field by the relatively compliant surface layer. On the other hand, when the interface has a modulus equal to that of the bulk material a strong size effect in hardening as well as a significant reverse plasticity are observed in small specimens. These effects are attributed to the energy stored in the elastic fields of the geometrically necessary dislocations (GNDs).     

Size effects under homogeneous deformation of single crystals: A discrete dislocation analysis

Mechanism-based discrete dislocation plasticity is used to investigate the effect of size on micron scale crystal plasticity under conditions of macroscopically homogeneous deformation. Long-range interactions among dislocations are naturally incorporated through elasticity. Constitutive rules are used which account for key short-range dislocation interactions. These include junction formation and dynamic source and obstacle creation. Two-dimensional calculations are carried out which can handle high dislocation densities and large strains up to 0.1. The focus is laid on the effect of dimensional constraints on plastic flow and hardening processes. Specimen dimensions ranging from hundreds of nanometers to tens of microns are considered. Our findings show a strong size-dependence of flow strength and work-hardening rate at the micron scale. Taylor-like hardening is shown to be insufficient as a rationale for the flow stress scaling with specimen dimensions. The predicted size effect is associated with the emergence, at sufficient resolution, of a signed dislocation density. Heuristic correlations between macroscopic flow stress and macroscopic measures of dislocation density are sought. Most accurate among those is a correlation based on two state variables: the total dislocation density and an effective, scale-dependent measure of signed density.     

Discrete dislocation plasticity analysis of the wedge indentation of films

The plane strain indentation of single crystal films on a rigid substrate by a rigid wedge indenter is analyzed using discrete dislocation plasticity. The crystals have three slip systems at ±35.3^° and 90^° with respect to the indentation direction. The analyses are carried out for three values of the film thickness, 2, 10 and , and with the dislocations all of edge character modeled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated through a set of constitutive rules. Over the range of indentation depths considered, the indentation pressure for the 10 and thick films decreases with increasing contact size and attains a contact size-independent value for contact lengths . On the other hand, for the films, the indentation pressure first decreases with increasing contact size and subsequently increases as the plastic zone reaches the rigid substrate. For the 10 and thick films sink-in occurs around the indenter, while pile-up occurs in the film when the plastic zone reaches the substrate. Comparisons are made with predictions obtained from other formulations: (i) the contact size-independent indentation pressure is compared with that given by continuum crystal plasticity; (ii) the scaling of the indentation pressure with indentation depth is compared with the relation proposed by Nix and Gao [1998. Indentation size effects in crystalline materials: a law for strain gradient plasticity. J. Mech. Phys. Solids 43, 411-423]; and (iii) the computed contact area is compared with that obtained from the estimation procedure of Oliver and Pharr [1992. An improved technique for determining hardness and elastic-modulus using load and displacement sensing indentation experiments, J. Mater. Res. 7, 1564-1583].     

Multiscale dislocation dynamics simulations of shock compression in copper single crystal

Ultra short pulse shock wave propagation, plastic deformation and evolution of dislocations in copper single crystals with (0 0 1), (0 1 1) and (1 1 1) orientations are investigated using multiscale dislocation dynamics plasticity analyses. The effects of peak pressure, pulse duration, crystal anisotropy and the nonlinear elastic properties on the interaction between shock wave and dislocations are investigated. The results of our calculations show that the dislocation density has a power law dependence on pressure with a power of 1.70 and that the dislocation density is proportional to pulse duration and sensitive to crystal orientation. These results are in very good agreement with the analytical predications of Meyers et al. [Meyers, M.A., Gregori, F., Kad, B.K., Schneider, M.S., Kalantar, D.H., Remington, B.A., Ravichandran G., Boehly, T., Wark, J., 2003. Laser-induced shock compression of monocrystalline copper: characterization and analysis. Acta Materialia 51, 1211–1228] and the experimental results of Murr [Murr, L.E., 1981. Residual microstructure-mechanical property relationships in shock loaded metals and alloys. In: Meyers, M.A., Murr, L.E. (Eds.), Shock Waves and High Strain Rate Phenomena in Metals. Plenum, New York, pp. 607–673]. It is shown also that incorporating the effect of crystal anisotropy in the elastic properties results in orientation dependent wave speed and peak pressure. The relaxed configurations of dislocation microstructures show the formation of microbands coincident with the slip planes.     

Multiscale dislocation dynamics analyses of laser shock peening in silicon single crystals

Although laser shock peening (LSP) has been applied in metals for property enhancement for a long time, its application on brittle materials has not been investigated so far. The present work is the first computational attempt to show that strong dislocation activity can be generated in silicon crystal by a modified LSP process. Multiscale dislocation dynamics plasticity (MDDP) simulations are conducted to predict the dislocation structure and stress/strain distribution in silicon crystal during LSP. In the modified LSP process, dislocation mobility of silicon and shock pressure is sufficiently high to generate and transport dislocation. The relationships between dislocation activities, the laser processing conditions and ablative coating material are systematically investigated. It is found that dislocation density, dislocation multiplication rate, and dislocation microstructure strongly depend on LSP processing conditions. This LSP process can also be applied in other brittle materials.     

Discrete dislocation plasticity analysis of the grain size dependence of the flow strength of polycrystals

The grain size dependence of the flow strength of polycrystals is analyzed using plane strain, discrete dislocation plasticity. Dislocations are modeled as line singularities in a linear elastic solid and plasticity occurs through the collective motion of large numbers of dislocations. Constitutive rules are used to model lattice resistance to dislocation motion, as well as dislocation nucleation, dislocation annihilation and the interaction with obstacles. The materials analyzed consist of micron scale grains having either one or three slip systems and two types of grain arrangements: either a checker-board pattern or randomly dispersed with a specified volume fraction. Calculations are carried out for materials with either a high density of dislocation sources or a low density of dislocation sources. In all cases, the grain boundaries are taken to be impenetrable to dislocations. A Hall–Petch type relation is predicted with Hall–Petch exponents ranging from ≈0.3 to ≈1.6 depending on the number of slip systems, the grain arrangement, the dislocation source density and the range of grain sizes to which a Hall–Petch expression is fit. The grain size dependence of the flow strength is obtained even when no slip incompatibility exists between grains suggesting that slip blocking/transmission governs the Hall–Petch effect in the simulations.     

Crystallographic failure analysis of film near cooling hole under temperature gradient of nickel-based single crystal superalloys

In this paper, a unit cell model with a film cooling hole has been set up to analyze the crystallographic stress characterization and failure behavior under temperature gradient of nickel-base single crystallographic superalloys (SC). The aim of this work is to study the failure behavior of SC blades with film cooling. The distribution of cooling air pressure on the hole side surface and the distribution of the temperature around the hole are obtained from the fluid analysis. The result of the temperature distribution is then transferred to the finite element model (cell model) by the interpolation method. The cell model is analyzed by the crystallographic rate dependent finite element method (FEM). Special attention is put on the influence of temperature gradient. The influence of the loading boundaries, i.e. displacement loading and stress loading, on the stress characterization around hole is also taken into consideration. The results show that temperature gradient hole has much influence on the stress characterization. Different types of loading boundaries result in different types of stress and strain distributions. There is clear stress concentration near the hole under displacement loading, while there is clear strain concentration under stress loading. The failure characterization has been studied by the strain energy density criterion. It is shown that the temperature gradient has influence on the failure behavior.     

Distribution of dislocation source length and the size dependent yield strength in freestanding thin films

A method is proposed to estimate the size-dependent yield strength of columnar-grained freestanding thin films. The estimate relies on assuming a distribution of the size of Frank-Read sources, which is then translated into a log-normal distribution of the source strength, depending on film thickness, grain size and theoretical strength of the material, augmented with a single fit parameter. Two-dimensional discrete dislocation plasticity (DDP) simulations are carried out for two sets of Cu films and the fit parameter is determined from independent experiments. Subsequent DDP predictions of the stress-strain curves in comparison with the corresponding experimental data show excellent agreement of initial yield strength and hardening rate for films of varying film thickness and grain size. Having thus demonstrated the power of the proposed strength distribution, it is shown that the mode of this distribution governs the most effective source strength. This is then used to suggest a method to estimate the yield strength of thin films as a function of film thickness and grain size. Simple maps are presented that are in very good agreement with recent experimental results for Cu thin films.     

Surface versus bulk nucleation of dislocations during contact

The indentation of single crystals by a periodic array of flat rigid contacts is analyzed using discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modeled as line singularities in a linear elastic solid. The limiting cases of frictionless and perfectly sticking contacts are considered. The effects of contact size, dislocation source density, and dislocation obstacle density and strength on the evolution of the mean indentation pressure are explored, but the main focus is on contrasting the response of crystals having dislocation sources on the surface with that of crystals having dislocation sources in the bulk. When there are only bulk sources, the mean contact pressure for sufficiently large contacts is independent of the friction condition, whereas for sufficiently small contact sizes, there is a significant dependence on the friction condition. When there are only surface dislocation sources the mean contact pressure increases much more rapidly with indentation depth than when bulk sources are present and the mean contact pressure is very sensitive to the strength of the obstacles to dislocation glide. Also, on unloading a layer of tensile residual stress develops when surface dislocation sources dominate.     

Yield stress strengthening in ultrafine-grained metals: A two-dimensional simulation of dislocation dynamics

The effect of grain size on the tensile plastic deformation of ultrafine-grained copper polycrystals is investigated using a two-dimensional simulation of dislocation dynamics. Emphasis is put on the elementary mechanisms governing the yield stress in multislip conditions. Whatever the grain size, the yield stress is found to follow a Hall-Petch law. However, the elementary mechanism controlling slip transmission through the grain boundaries at yield is observed to change with the grain size. For the larger grain sizes, the stress concentrations due to dislocations piled-up at grain boundaries are responsible for the activation of plastic activity in the poorly stressed grains. For the smaller grain sizes, the pile-ups contain less dislocations and are less numerous, but the strain incompatibilities between grains become significant. They induce high internal stresses and favor multislip conditions in all grains. Based on these results, simple interpretations are proposed for the strengthening of the yield stress in ultrafine grained metals.     

Analysis of grain size effects on transformation-induced plasticity based on a discrete dislocation-transformation model

There is much interest recently in the possibility of combining two strengthening effects, namely the reduction of grain size (Hall-Petch effect) and the transformation-induced plasticity effect (strengthening due to a martensitic transformation). The present work is concerned with the analysis of the combination of these two effects using a discrete dislocation-transformation model. The transformation-induced plasticity mechanism is studied for aggregates of grains of ferrite and austenite of different sizes. The discrete model allows to simulate the behavior at sub-grain length scales, capturing the complex interaction between pile-ups at grain boundaries and the evolution of the microstructure due to transformation. The simulations indicate that, as the average grain size decreases, the relative strengthening due to the formation of martensite is significantly reduced and that the overall strengthening is mostly due to a Hall-Petch effect. This finding suggests that strengthening by the transformation-induced plasticity mechanism is ineffective in the presence of fine-grained microstructures.     

A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoretical analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kröner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.     

金属Mo中韧位错运动特性的分子动力学研究

通过分子动力学方法(MDM), 采用镶嵌原子势法(EAM), 沿[111]方向插入两层(211)半原 子面形成位错,模拟了低温不同冲击载荷下和相同载荷不同温度下金属Mo中韧位错的动力 学特性. 结果表明：在低温冲击载荷下,Mo中的韧位错可以由静止加速到超过波速. 随着 载荷的增加,在位错运动的[111]方向将会出现3个波速;在相同载荷不同温度下,位错的 速度随着温度的升高而减小,即影响位错速度的拖动系数$B(T)$随温度升高而增大. 随着冲 击载荷的增大,拖动系数随温度的变化趋势减缓,即外加载荷对B(T)也有影响.     

A two-dimensional dislocation dynamics model of the plastic deformation of polycrystalline metals

Two-dimensional dislocation dynamics (2D-DD) simulations under fully periodic boundary conditions are employed to study the relation between microstructure and strength of a material. The material is modeled as an elastic continuum that contains a defect microstructure consisting of a preexisting dislocation population, dislocation sources, and grain boundaries. The mechanical response of such a material is tested by uniaxially loading it up to a certain stress and allowing it to relax until the strain rate falls below a threshold. The total plastic strain obtained for a certain stress level yields the quasi-static stress-strain curve of the material. Besides assuming Frank-Read-like dislocation sources, we also investigate the influence of a pre-existing dislocation density on the flow stress of the model material. Our results show that - despite its inherent simplifications - the 2D-DD model yields material behavior that is consistent with the classical theories of Taylor and Hall-Petch. Consequently, if set up in a proper way, these models are suited to study plastic deformation of polycrystalline materials.     

Influence of single crystal orientation on homogeneous dislocation nucleation under uniaxial loading

Atomistic simulations are used to investigate how the stress required for homogeneous nucleation of partial dislocations in single crystal copper under uniaxial loading changes as a function of crystallographic orientation. Molecular dynamics is employed based on an embedded-atom method potential for Cu at 10 and 300 K. Results indicate that non-Schmid parameters are important for describing the calculated dislocation nucleation behavior for single crystal orientations under tension and compression. A continuum relationship is presented that incorporates Schmid and non-Schmid terms to correlate the nucleation stress over all tensile axis orientations within the stereographic triangle. Simulations investigating the temperature dependence of homogeneous dislocation nucleation yield activation volumes of ≈0.5- and activation energies of . For uniaxial compression, full dislocation loop nucleation is observed, in contrast to uniaxial tension. One of the main differences between uniaxial tension and compression is how the applied stress is resolved normal to the slip plane on which dislocations nucleate—in tension, this normal stress is tensile, and in compression, it is compressive. Last, the tension-compression asymmetry is examined as a function of loading axis orientation. Orientations with a high resolved stress normal to the slip plane on which dislocations nucleate have a larger tension-compression asymmetry with respect to dislocation nucleation than those orientations with a low resolved normal stress. The significance of this research is that the resolved stress normal to the slip plane on which dislocations nucleate plays an important role in partial (and full) dislocation loop nucleation in FCC Cu single crystals.     

Analytical solution of plane constrained shear problem for single crystals within continuum dislocation theory

Berdichevsky and Le have recently found the analytical solution of the anti-plane constrained shear problem within the continuum dislocation theory (CMT, Contin. Mech. Thermodyn. 18:455–467, 2007). Interesting features of this solution are the energetic and dissipative thresholds for dislocation nucleation, the Bauschinger translational work hardening, and the size effect. In this paper an analytical solution of the plane constrained shear problem for single crystals exhibiting similar features is obtained and the comparison with the discrete dislocation simulation is provided. Dedicated to the memory of George Herrmann