外加条件对量子点红外探测器暗电流特性的影响

考虑微米尺度和纳米尺度下电子传输对激发能的共同影响,基于电子漂移速度对外加电场的依赖,研究外加电场和外加温度对量子点红外探测器暗电流特性的影响.结果表明:外加电场在0~25kV/cm范围内时,暗电流模型和实验数据变化相吻合.暗电流随着外加电场的增加而增加,并且当外加电场小于6kV/cm时暗电流增加迅速,而当外加电场大于6kV/cm时暗电流增加缓慢.暗电流随着外加温度的增加迅速增加.该研究为量子点红外探测器的优化设计和性能提高提供了理论参考.     

聚合物材料空间电荷陷阱模型及参数

采用电声脉冲测量技术研究了直流电场下低密度聚乙烯材料的电荷入陷和脱陷特征. 发现在不同电场周期下样品的电荷衰减呈现不同的特征, 为此提出了一个简单的基于两陷阱水平的入陷和脱陷模型, 并计算了相应的参数, 如陷阱能级和密度. 确定了不含任何添加剂的低密度聚乙烯样品中存在的两种水平的陷阱能级分别为: 较浅陷阱能级0.77–0.81 eV 对应的浅陷阱电荷密度为(1.168–1.553)× 10¹⁹ m^-3; 较深陷阱能级0.96–1.01 eV 对应的深陷阱电荷密度为(1.194–4.615)× 10¹⁸ m^-3. 最后初步验证了材料的深陷阱能级和对应的深陷阱电荷密度随老化而增加, 可考虑将模型中的两能级陷阱参数作为老化诊断特征参量. 关键词： 聚合物 空间电荷 陷阱 老化     

SiOxNy薄膜的微观结构与新的电流传输机理模型

本文研究了SiO_xN_y薄膜的微观结构和电流传输行为,并提出一个新的,用于解释SiO_xN_y薄膜的电流传输,特别对于外加高场直到介质膜发生本征击穿前的电流传输行为的模型。理论与实验符合较好。采用新模型满意地解释了膜的l-V特性中出现的电流增加和陷阱台阶现象,并对外加电场和电子陷阱对电流传输行为的影响进行了讨论。 关键词：     

外加条件及两种电子传输对量子点红外探测器噪声的影响

基于外加电场对电子漂移速度的影响,考虑激发能对微米尺度和纳米尺度电子传输的依赖,通过计算仿真研究了外加条件及两种电子传输对量子点红外探测器噪声的影响.结果表明:在2545kV/cm外加电场下,噪声模型和实验数据吻合;噪声随着外加电场和温度的增加而增加,当温度小于80K时噪声增加迅速,而当温度大于80K时噪声增加缓慢,并且温度越低噪声随外加电场变化越明显;噪声不随微米尺度电子传输激发能的变化而变化,随着纳米尺度电子传输激发能的增加而减小,随着纳米尺度电子传输激发能变化速度的增加而增加.该研究可为量子点红外探测器的优化设计和性能提高提供理论参考.     

外电场下应变量子阱中电子与空穴的本征态

考虑自发与压电极化引起的内建电场,自由电子-空穴气屏蔽效应和外加电场,基于常微分数值计算,自洽求解电子与空穴的薛定谔方程和泊松方程以获得基态能级。以典型的GaN/A lxGa1-xN纤锌矿氮化物应变量子阱为例,通过数值求解,得到电子与空穴的本征基态能和相应本征波函数。计算结果表明:沿量子阱生长方向所施加的外加电场将抵消阱中内建电场的作用,阱结构的弯曲程度略显平缓,使电子(空穴)本征波函数逆(顺)着外电场方向移动,且均向阱中心移动,波峰峰值增加,隧穿几率减小;在固定外电场情况下,电子与空穴基态能级随阱宽的增加而减小,随掺杂组分的增加而增加,表明外加电场对内建电场有所削弱以及量子限制作用对电子(空穴)基态能有显著的影响。     

基于Ni电极和ZrO_2/SiO_2/ZrO_2介质的MIM电容的导电机理研究

研究了基于Ni电极和原子层淀积的ZrO_2/SiO_2/ZrO_2对称叠层介质金属-绝缘体-金属(MIM)电容的电学性能.当叠层介质的厚度固定在14nm时,随着SiO_2层厚度从0增加到2nm,所得电容密度从13.1 fF/μm~2逐渐减小到9.3fF/μm~2,耗散因子从0.025逐渐减小到0.02.比较MIM电容的电流-电压(I-V)曲线,发现在高压下电流密度随着SiO_2厚度的增加而减小,在低压下电流密度的变化不明显,还观察到电容在正、负偏压下表现出完全不同的导电特性,在正偏压下表现出不同的高、低场I-V特性,而在负偏压下则以单一的I-V特性为主导.进一步对该电容在高、低场下以及电子顶部和底部注入时的导电机理进行了研究.结果表明,当电子从底部注入时,在高场和低场下分别表现出普尔-法兰克(PF)发射和陷阱辅助隧穿(TAT)的导电机理;当电子从顶部注入时,在高、低场下均表现出TAT导电机理.主要原因在于底电极Ni与ZrO_2之间存在镍的氧化层(NiO_x),且ZrO_2介质层中含有深浅两种能级陷阱(分别为0.9和2.3 eV),当电子注入的模式和外电场不同时,不同能级的陷阱对电子的传导产生作用.     

薄SixOyNz膜击穿机理的研究

本文在研究极薄Si_xO_yN_x膜击穿特性的基础上,探讨了氮化SiO₂膜的击穿机构,讨论了氮化影响击穿性能的因素。实验结果与理论分析表明,氮化后的SiO₂膜击穿性能的改善主要决定于膜中及表界面的微观结构的改善及成分的改变。虽然,氮化引起介质膜带隙宽度的变窄将导致击穿电场的下降,但致密的材料结构、变得平整的表界面及陷阱的影响将大大推迟击穿的发生。实验结果表明,氮化SiO₂膜的本征型 关键词：     

Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N量子阱中的Rashba自旋劈裂

正如人们所知, 可以通过电场或者设计非对称的半导体异质结构来调控体系的结构反演不对称性(SIA)和Rashba自旋劈裂. 本文研究了Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中第一子带的Rashba 系数和Rashba自旋劈裂随Al_0.3Ga_0.7N插入层(右阱)的厚度w_s以及外加电场的变化关系, 其中GaN层(左阱)的厚度为40-w_s Å. 发现随着w_s的增加, 第一子带的Rashba系数和Rashba自旋劈裂首先增加, 然后在w_s>20 Å 时它们迅速减小, 但是w_s>30 Å时Rashba自旋劈裂减小得更快, 因为此时k_f也迅速减小. 阱层对Rashba系数的贡献最大, 界面的贡献次之且随w_s变化不是太明显, 垒层的贡献相对比较小. 然后, 我们假w_s=20 Å, 发现外加电场可以很大程度上调制该体系的Rashba系数和Rashba自旋劈裂, 当外加电场的方向同极化电场方向相同(相反)时, 它们随着外加电场的增加而增加(减小). 当外加电场从-1.5×10⁸ V·m^-1到1.5×10⁸ V· m^-1变化时, Rashba系数随着外加电场的改变而近似线性变化, Rashba自旋劈裂先增加得很快, 然后近似线性增加, 最后缓慢增加. 研究结果表明可以通过改变GaN层和Al_0.3Ga_0.7N层的相对厚度以及外加电场来调节Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中的Rashba 系数和Rashba自旋劈裂, 这对于设计自旋电子学器件有些启示.     

LT-GaAs飞秒光电导之电场响应特性

利用飞秒光电导自相关技术研究了LT GaAs飞秒光电导开关时间随外加偏置电场的变化规律 .实验结果显示当外加偏置电场从0.5×10⁴ V/cm 上升到9.5×10⁴ V/cm 时，光电导 开关时间开始在200fs附近缓慢变化再迅速增加到750fs.这是由于随着外加电场增加，Fren kel-Poole效应导致的EL2缺陷中心库仑吸引势垒降低和电场增强的碰撞电离效应显著增强 ，导致载流子俘获截面减小，载流子寿命增加之故. 关键词： 光电导自相关技术 载流子俘获时间 Frenkel-Poole效应 电子碰撞电离效应     

主客体掺杂型非线性光学聚合物驻极体DR1/PMMA膜中空间和偶极电荷的相互作用特性

运用热刺激放电、表面电位衰减和电光效应的检测等手段,对主客体掺杂型非线性光学聚合物驻极体DR1/PMMA膜中空间和偶极电荷的相互作用特性进行了研究．结果表明,在极化后的样品中,被样品表面或体内的各类陷阱捕获的大部分空间电荷所处的陷阱能级高于极性生色团分子的定向排列产生的偶极电荷的束缚能级,空间电荷对偶极电荷有强烈的束缚作用．空间电荷衰减将导致材料内的电场分布发生变化,并引起极性生色团分子的松弛．空间电荷稳定性决定着偶极电荷的寿命. 关键词：     

动态应力下超薄栅氧化层经时击穿的可靠性评价

实验发现动态电压应力条件下,由于栅氧化层很薄,高电平应力时间内隧穿入氧化层的电子与陷落在氧化层中的空穴复合产生中性电子陷阱,中性电子陷阱辅助电子隧穿.由于每个周期的高电平时间较短(远远低于电荷的复合时间),隧穿到氧化层的电子很少,同时低电平应力时间内一部分电荷退陷,形成的中性电子陷阱更少.随着应力时间的累积,中性电子陷阱达到某个临界值,栅氧化层突然击穿.高电平时形成的陷阱较少和低电平时一部分电荷退陷,使得器件的寿命提高. 关键词： 超薄栅氧化层 斜坡电压 经时击穿     

Persistent mechanoluminescence induced by elastic deformation of ZrO2:Ti phosphors

ZrO₂:Ti phosphors show such a strong mechanoluminescence (ML) that it can be seen in day light with naked eye. When a pellet of ZrO₂:Ti phosphor mixed in epoxy resin is deformed in the elastic region at a fixed strain rate using a testing machine, ML intensity increases linearly with time, and when the deformation is stopped, ML intensity decreases exponentially with time. For a given strain rate, ML intensity increases linearly with pressure, and for a given pressure, ML intensity increases linearly with the strain rate. The total ML intensity, in the deformation region, increases quadratically with pressure; however, the total ML intensity in the post-deformation region increases linearly with pressure. ML intensity decreases with successive number of pressings, whereby the reduced ML intensity can be recovered by UV-irradiation of the sample. ML intensity increases linearly with density of filled electron traps and it is optimum for a particular concentration of Ti in ZrO₂. ML intensity should change with increasing temperature of the phosphors. Although ZrO₂ is non-piezoelectric as a whole, it seems that the local structures near the Ti ions in ZrO₂ crystals are in the piezoelectric phase. The elastico ML in ZrO₂ phosphors can be understood on the basis of the localized piezoelectrification-induced detrapping model. According to this model, the localized piezoelectric field near Ti ions causes detrapping of electrons and subsequently the detrapped electrons moving in the conduction band are captured by the energy state of excited Ti⁴⁺ ions, whereby excited Ti⁴⁺ ions are produced and consequently the decay of excited Ti⁴⁺ ions gives rise to the light emission. The expressions derived on the basis of this model are able to explain satisfactorily the characteristics of ML. The relaxation time of localized piezoelectric charges and the threshold pressure for the ML emission can be determined from ML measurements. The long decay of elastico ML indicates the possibility of exploring persistent elastico ML, which may be useful for the fabrication of dim light sources capable of operating without any external power.     

Effect of heating treatment on trap level distribution in polyamide 66 film electrets

The effect of heating treatment on the trap level distribution in polyamide 66 film electret is studied by thermally stimulated depolarization current （TSDC） technique. For annealed polyamide 66, there are three trap levels that respectively originate from space charge trapped in amorphous phase, interphase and crystalline phase. There is one peak that originates from space charge trapped in amorphous phase for quenched one. Using multi-point method to fit the experimental curves, the detrapping current peaks can be separated and the trap depth is obtained. The shallower trap levels trapped in amorphous phase and interphase are obviously close to the deeper trap level trapped in crystalline phase for annealed polyamide 66 as the polarization temperature increases, while the trap level distribution remains unaffected by polarization temperature for quenched one.     

LiNbO3表面势抗屏蔽措施研究

铁电单晶体自发极化引起的强周期性表面电场可能用来代替Wiggler磁铁产生自由电子激光。但落在铁电晶体表面上的自由电子将逐渐把表面势屏蔽掉。本文提出一个抗屏蔽措施:在LiNbO₃极化晶面上每一个正极化畴区铺上一层绝缘膜,在上面再覆盖一层接地导体膜,可以防止电子对极化晶面的屏蔽。本文证明了在导体膜每部分两表面应电荷之和为零,落在上面的自由电子将立刻逃逸入地。 关键词：     

New physical model to explain logarithmic time dependence of data retention in flash EEPROM

Data retention after program/erase (P/E) cycles is one of the most important reliability issues in a flash EEPROM. Electron detrapping is the main cause of data leakage in the state-of-the-art flash EEPROM. The log(t) dependence of ΔV_th is a unique aspect of the electron detrapping. To explain log(t) dependence, we have assumed that after electron detrapping, the positive-ionized trap reduces the probability of electrons in the influence area being emitted from their site. Based on this assumption, we have proposed a model of detrapping which is consistent with the experimental results.     

Manipulation of localized charge states in n-MOSFETs with microwave irradiation

We demonstrate how the charge state of a trap at the Si/SiO₂ interface in a MOSFET can be controlled by microwave irradiation. The device is immersed in a static magnetic field at 300 mK and operates at small bias. Under such experimental conditions the electron spins are almost fully polarized. The electron occupancy of the trap is reversibily raised from one to two electrons by turning on a microwave field of less than 10 μW. Such contactless method controls the charge bound to defects close to the channel and it enables the fast initialization of the charge and spin state of the trapped electrons. This is particularly important in those spin resonance quantum computation schemes where a channel current senses the charge state, to improve the switching clock and to eliminate the related noise.     

Annealing Effect on Chain Segment Motion and Charge Trapping and Detrapping in Nylon 1010

The chain segment motion and charge trapping and detrapping in nylon 1010 films were investigated by means of thermally stimulated depolarization current (TSDC). There were three current peaks (named α, ρ1, and ρ2 peaks, respectively) in the experimental TSDC spectra above room temperature. The α peak is attributed to a background dipole relaxation by the motion of chain segments and space charge contribution, the ρ1 peak is originated from a space charge trapped in the bulk amorphous regions and the interphase between crystalline and amorphous regions, the ρ2 peak is originated from space charge trapped in crystalline regions. By analyzing the characteristic parameters of these peaks, it was found that with in increase of the degree of crystallinity the activation energy of the a peak increased from 1.12 to 1.22 eV and the trap depth of the ρ2 peak increased from 2.70 to 2.82 eV, while the trap depth of the ρ1 peak decreased from 1.50 to 1.29 eV. Annealing induced a decrease of the chain segment mobility and promoted the creation of traps in nylon 1010. Annealing also decreased the stability of the trapped charges in the bulk amorphous and the interphase regions and increased the stability of the trapped charges in the crystalline regions.     

激光脉冲的横向波形对弓形波电子俘获的影响

用粒子模拟研究了在激光尾波场电子弓形波注入过程中激光脉冲的横向波形对尾波场俘获电子数目的影响, 发现与高斯激光相比, 超高斯形激光更有利于拉动空泡闭合前侧边的电子团向空泡尾部汇聚形成高能量局域化的弓形波, 从而导致更多的电子注入到空泡的加速相, 使得被俘获的电子数目提高近5倍, 且电子束品质得到改善.该研究对于进一步理解尾波场加速中电子注入等有参考价值. 关键词： 尾波场 电子俘获 横向波形 粒子模拟     

Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress

The kink effect is studied in an AlGaN/GaN high electron mobility transistor by measuring DC performance during fresh, short-term stress and recovery cycle with negligible degradation. Vdg plays an assistant role in detrapping electrons and short-term stress results in no creation of new category traps but an increase in number of active traps. A possible mechanism is proposed that electrical stress supplies traps with the electric field for activation and when device is under test field-assisted hot-electrons result in electrons detrapping from traps, thus deteriorating the kink effect. In addition, experiments show that the impact ionization is at a relatively low level, which is not the dominant mechanism compared with trapping effect. We analyse the complicated link between the kink effect and stress bias through groups of electrical stress states: Vds = 0-state, off-state, on-state (on-state with low voltage, high-power state, high field state). Finlly, a conclusion is drawn that electric field brings about more severe kink effect than hot electrons. With the assistance of electric field, hot electrons tend to be possible to modulate the charges in deep-level trap.