中子辐照对Pd_(80)Si_(20)与Pd_(77.5)Cu_6Si_(16.5)非晶态合金结构的影响

本工作用X射线衍射技术示差扫描量热法(DSC)和内耗测量等手段研究金属-类金属非晶态合金Pd_(80)Si_(20)和Pd_(77.5)Cu_6Si_(16.5)中子辐照前后的微观结构变化。结果表明,辐照在两种样品的对关联函数g(r)以及径向分布函数RDF(r)上都引起明显的变化;辐照后样品的晶化温度和晶化热有所提高,结构变得更加无序,Pd_(80)Si_(20)非晶态合金的内耗在T相似文献   

落管中Pd77.5Au6Si16.5合金的固化动力学亚稳相的形成

研究了落管中Pd_77.5Au₆Si_16.5合金的过冷、生核及亚稳相的形成。在小于400μm的金属小球中发现Pd的固溶体相;在较大的金属小球中则观察到Pd₃Si金属间化合物相。本文还在经典生核理论的基础上,计算了不同相的固液自由能差、成核功、生核速率及晶体生长速度随温度的变化关系,并由此得到时间-温度-转变曲线(t-T-t),计算与实验结果较为一致。 关键词：     

非晶Fe73.5Cu1Nb3Si13.5B9合金激光纳米化的超精细结构研究

在CO₂激光功率为50—300W、扫描速度为20mm/s、激光散光斑为20mm照射条件下 ，诱导非 晶Fe_735Cu₁Nb₃Si_135B9带中发生结构重组，产生定量纳米α-F e(Si)晶相形成双相组织结构材料. 利用穆斯堡尔谱研究了非晶Fe_735C u₁Nb₃Si_135B₉合金激光纳米化的 超精细结构. 实验结果表明，激光诱导非晶 Fe_735Cu₁Nb₃Si_135B ₉纳米化后，其超精细磁场的分布随 着激光功率变 化由单峰向双峰变化，在高功率辐照时， 出现了双峰分布，并且峰位向高场移动. 高激光 功率辐照非晶Fe_735Cu₁Nb₃Si_{135B9合金纳米晶化相有四种超精细结 构，即2个超精细磁场较小的初晶相和2个超精细磁场较大的纳米晶化相. 其中超精细磁场较 大(17—25MA/m)的α-Fe(Si)相为DO3结构. 关键词： 激光 纳米晶α-Fe（Si) 735}Cu₁Nb< sub>3Si_135B₉')" href="#">非晶Fe_735Cu₁Nb< sub>3Si_135B₉ 超精细结构 超精细磁场     

Fe73.5Cu1Nb3B9Si13.5非晶态合金的激波纳米晶化研究

实验表明,非晶态合金在激波影响下会转变为纳米晶.最近的实验进一步发现,Fe_73.5Cu₁Nb₃B₉Si_13.5非晶态合金中的Cu,Nb在激波晶化中的细化作用被抑制,且样品在这种转变之后作进一步的退火处理,其晶粒度变大而晶格常数变小.在激波晶化机理分析中提出了“激波流体晶化”构想. 关键词：     

非晶态合金La72Si28晶化过程中生成的新亚稳超导相

本文报道了在非晶态合金La₇₂Si₂₈晶化过程中生成新亚稳超导相的实验结果。非晶态合金La₇₂Si₂₈是用液态急冷法制备的,该合金经250℃,30min热处理后,得到了一个新的亚稳超导相,该相具有正交结构,其晶格参数为a=9.121?,b=6.821?,c=3.833?,超导临界温度T_c为3.02K,高于目前已知的La-Si系超导相的T_c值。 关键词：     

非晶态超导合金Zr87.7Si12.3中结构弛豫和结晶化对超导

对非易态超导合金Zr_87.7Si_12.3,在适当的温度下进行了lh等时退火处理.测量了其结构、超导临界参量T_c,H_(C2)及其转变宽度ΔT_c,ΔH_c2等的变化.发现些与金属-金属型非晶态合金不同的变化规律,并结合在结构弛豫过程中所发生的拓扑短程有序化和化学短程有序化,以及相应的结晶化机制,对实验结果作了讨论. 关键词：     

Cu50Ti50非晶态合金的中子辐照效应

本文叙述了用X射线衍射和differential scanning calorimetry(缩写为DSC)测量两种方法对Cu₅₀Ti₅₀非晶态合金进行的快中子辐照效应研究。辐照不仅改变了该合金晶化峰的温度,而且还改变了晶化峰的形貌。在X射线衍射研究中还观察到辐照对结构所产生的影响恰与低温退火的影响相反。在这两种实验结果的基础上,讨论了Cu₅₀Ti₅₀非晶态合金的快中子辐照与原子短程结构变化的关系。 关键词：     

二元非晶态合金结构模型化的Rt判据

类金属原子的相对分布是过渡金属-类金属(TM-M)型非晶态合金结构中化学短程序的一个重要特征。本文根据这一思想定义了一个新的制作此类非晶态合金结构模型的判据,并使用此判据制作了几个组分和成分都各不相同的结构模型,分别模拟Ni₆₄B₃₆,Fe₈₀B₂₀,Ni₈₁B₁₉和Co₈₁P₁₉非晶态合金的结构。所得的各部分径向分布函数G_ij(r)都与实验相符。将这些结果与前人的工作作了比较,并进行了讨论。 关键词：     

几种金属玻璃结构的X射线研究

本工作用X射线散射技术研究了金属一类金属玻璃合金Pd₇₇Si_16.5Ag_6.59,Co_42.9Ni_27.3Fe_7.8Si₈B₁₄和Co_50.7Ni_19.5Fe_7.8Si₆B₁₆的结构。求出了它们的干涉函数I(s)和原子径向分布函数RDF(r),并由此获得了有关结构信息的原子平均距离、最近邻配位数和短程有序畴半径。此外,对这些合金的RDF(r)第一峰作了高斯分布拟合,求得了比较好的拟合方程,并用近似方法估算了其中金属-金属原子间的配位数。 关键词：     

R13Fe74Si13三元合金的结构与磁性

本文对R₁₃Fe₇₄Si₁₃(R=Ce,Pr,Nd,Gd,Tb,Dy,Ho,Er,Y)三元合金的结构和磁性进行了研究。结果表明,R₁₃Fe₇₄Si₁₃的主相为R₂(Fe_0.85Si_0.1517赝二元金属间化合物,而不出现类似于R₂Fe₁₄B的三元 关键词：     

Radiation-induced defects in amorphous Pd80Si20

Irradiation of the metallic glass Pd₈₀Si₂₀ with high energy Ar-ions at low temperatures resulted in electrical resistance increases of about 5% at a measuring temperature of 10 K after fluences of 3·10¹⁵ Ar/cm² indicating that defects were created by radiation damage. Annealing experiments were performed up to 150°C showing a smooth recovery throughout the whole temperature range.     

Electrical resistance and magnetoresistance of amorphous alloys Gd67Co33 and Pd80Si20

In search for structural contributions to the low temperature anomaly we report high resolution resistance and magnetoresistance measurements ($\text{0.02}\text{K}\text{? T ? 20}\text{K}$) of amorphous splats of Gd₆₇Co₃₃ and Pd₈₀Si₂₀. For both alloys, the resistivity ?(H = 0, T) has a minimum at T ～ 10 K and increases with decreasing T. The ferromagnetic Gd₆₇Co₃₃ shows a strong negative field dependence of $\text{Δ?}\text{?(0)}$, saturating at H ～ 2T for T = 4.2 K but no measurable change in $\text{??}\text{?}\text{T}$ below 10 K is observed.The diamagnetic Pd₈₀Si₂₀ exhibits a positive field dependent magnetoresistance $\text{[Δ?}\text{?(0)]}\text{(}\text{H}\text{)}$ at low temperatures. Additionally, a field dependent part in $\text{??}\text{?}\text{T}$ is found which is probably due to paramagnetic impurities (～ 1 ppm Fe). However, there is also a field independent contribution in the amorphous state of Pd₈₀Si₂₀, which vanishes after crystallization. We attribute this to non-magnetic scattering induced by the disordered structure.     

Influence of stress and temperature on damping behavior of amorphous Pd77.5Cu6.0Si16.5 below Tg

In this work we analyzed the mechanical damping behavior of amorphous Pd_77.5Cu_6.0Si_16.5 below the glass transition temperature (T _g) with creep/recovery measurements. Here a correlation between temperature stimulation and external stress is found in an exponential, multiplicative way. This demonstrates that not only is the yield stress of the material influenced by temperature variation (mechanical melting) but also the secondary relaxation is modified under stress and temperature.     

非晶合金Pd80Si20晶化过程中的亚稳相

利用电子显微镜中的倾转晶体法确定了三个晶化相。亚稳相P₁具有简单正交点阵,点阵常数a=0.46,b=1.37,c=1.69nm,可能的空间群为P_nmm:或P_(nm21)。P₁相可用来解释Masumoto等人及Duhaj等人的电子衍射图。另一亚稳相F具有面心正交点阵,其a,b值与P₁相同,c=1.46nm。高温晶化相P₂具有简单正交点阵,点阵常数a=0.3 关键词：     

Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature

Low temperature irradiation of thin films of Nb₇₅Ge₂₅ (T_c = 3.2 K) and Nb₈₀Si₂₀ (T_c = 4.7 K) with 20 MeV sulfur ions leads to an increase of T_c of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.     

A simultaneous voltammetric and dilatometric study of hydrogen absorption in Pd and amorphous Pd80Si20

By simultaneously measuring the length change of a palladium electrode and the current through the electrolytical cell when a triangular voltage is applied across the cell, it is possible to distinguish between surface and bulk processes during hydrogen uptake in Pd. From a comparison of corresponding dilatograms and voltammograms of polycrystalline Pd with those of crystalline Pd and amorphous Pd₈₀Si₂₀, one concludes that the diffusion of hydrogen into the bulk of the samples takes place to a large extent along dislocation lines. Dilatometric and voltammetric measurements in magnetic fields up to 10T show that the absorption of well annealed Pd electrodes is increasing up to 1T and saturates at higher fields.     

Recovery of electrical resistivity in amorphous pdsi alloys after low temperature neutron irradiation

Measurements of electrical resistivity after low temperature fast neutron irradiation are made for amorphous Pd₈₀Si₂₀ and Pd₈₀Ni₂Sl₁₈ and then Pd₈₀Si₂₀ annealed at 230°C and 360°C, and the isochronal annealing curves are obtained. The resistivity increase of Pd₈₀Si₂₀ annealed at 360°C is about 10 times larger than that of amorphous alloys and no defined annealing stage is observed in amorphous alloys and Pd₈₀Si₂₀ annealed at 360°C. For amorphous Pd₈₀Si₂₀, about 60% of the resistivity increase by irradiation remains after annealing up to room temperature and these are discussed by the structural relaxation.     

Superconductivity in CeCu2Si2

Resistivity measurements of CeCu₂Si₂ are carried out under pressures p up to 12 kbars. Unlike polycrystalline samples, no traces of superconductivity have been observed in CeCu₂Si₂ at ambient pressure. When pressure is applied, CeCu₂Si₂ monocrystals become superconducting with anomalously large ratio H_c2(0)/T_c (0) = 34 K0e/K and with the derivative dH_c2/dT(T=T_c) = 140 K0e/K     

Crystal structure and magnetic properties of HoPt2Si2

The crystal structure of HoPt₂Si₂ was determined using powder neutron diffraction data. It is tetragonal, CaBe₂Ge₂ type (space group P4/_n mm). Neutron diffraction and magnetometric measurements indicate that HoPt₂Si₂ remains paramagnetic at the temperature of 2.0 K.