Some photoelectric properties of the nucleic acid bases in thin layers

The current-voltage characteristics of dark-conductivity and photoconductivity, the lux-ampere characteristics, the spectral dependence of photoconductivity and the relative quantum efficiency of vacuum deposited layers of adenine, thymine, uracil and cytosine were investigated at room temperature. The following values of photoconductivity thresholdE _th were obtained: 3·81 ±± 0·1 eV for adenine; 3·69±0·1 eV for thymine; 3·80±0·1 eV for uracil; 3·77 ± 0·1 eV for cytosine.It may be shown thatE _th is most probably the threshold value for intrinsic photoconductivity of NA bases and, consequently, corresponds to the first electron conductivity levelE _c or at leastE _c >E_th. The possible energy diagram of the NA bases is evaluated.     

Annealing behavior ot trap-centers in silicon containing A-swirl defects

The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE _c }-0.07 eV, _n=4.6×10^–16 cm², andE _c–0.49eV, _n=6.6×10^–16cm² are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE _c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE _c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE _c–0.49 eV, _n=2.9×10^–16cm² only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.     

Optical,photoelectric and electric properties of single-crystalline Sb2Se3

Measurements of absorption coefficient in the region of the absorption edge, of spectral distribution of photoconductivity and dependence of electrical conductivity upon temperature on Sb₂Se₃ single crystals are given. The absorption of light was proved to correspond to indirect forbidden transitions. The value of optical gapE _g ^opt =(1·11±0·02) eV forE a andE c was determined. From photoconductivity and conductivity measurements the values of the gaps areE _g ^opt =1·11 eV andE _g ^el =1·04 eV. The anisotropy of the electrical conductivity parallel and perpendicular to the cleavage plane is 2·2.     

Influence of deformation on the conductivity and photoconductivity of p-Type CdTe

Samples of p-type CdTe were subjected to deformation. Studies were performed of the influence of 60°-dislocations on the electrical conductivity, on the lifetime of minority carriers and on the relative change of the conductivity due to illumination. Dislocations were produced by bending the sample that was cut at suitable orientation. In this way, one obtained the 60°-dislocations, either of α- or β-type, according to the kind of bending involved. From the measurement of the temperature dependence of the conductivity it was ascertained that an increase in acceptor concentration occurs on the level with activation energy of 0.3 eV (identical to that of V^cd or a complex with V^cd), regardless of the type of dislocations. The concentration of acceptors on the level with activation energy 0.3 eV increases on increasing the dislocation density. The most probable explanation is that the deformation and, especially, annealinginduced migration of the dislocations produced give rise also to V^cd and/or V^Te (both types simultaneously). V^cd acts as an acceptor and V^Te as a donor. It follows that the increase in V^Te can not be established from this measurement. The lifetime of the minority carriers is almost unaffected by introducing the dislocations into the samples. From the temperature dependence of the relative change in conductivity due to illumination one can determine the activation energy of a dislocation level provided that one assumes the dislocations acting as recombination centers. Under this assumption one obtainsE _d =0.21–0.24 eV (for type α) andE _d =0.55–0.59 eV (for type β), measured from the top of the valence band.     

Electrical and optical properties of electron-irradiated ZnGeP2

Conclusions and summary The following conclusions are drawn from the reported study:The electrophysical properties of ZnGeP₂ crystals and their optical transparency in the range hG are attributable to the presence of a density-dominant (10¹⁷–10¹⁹ cm^–3) deep [E_v+(0.5–0.6) eV] growth defect associated predominantly with Zn vacancy clusters.Irradiation by high-energy electrons induces a shift of the Fermi level in the direction of E_G/2 and increases the resistivity of ZnGeP₂ to values of approximately 10¹² ·cm at 300 K. Irradiation with high-energy electrons is an effective technique for the optical bleaching of p-ZnGeP₂. The reversible modification of the optical absorption spectra of p-ZnGeP₂ in connection with irradiation and subsequent annealing indicates that the absorption step in the vicinity of h 0.6 eV is not attributable to light absorption by germanium inclusions, but to optical transition from the valence band to the growth-defect level E_v+(0.5–0.6) eV.Enhancement of the optical transmissivity of p-ZnGeP₂ in the range hG can be achieved in two wayss 1) as the result of a decrease in the density of centers with the level E_v+0.6 eV by variation of the growth conditions or subsequent annealing; 2) by shifting the Fermi level above the energy position E_v+0.6 eV through the irradiation-induced injection of compensating donor centers.The injection of radiation defects is an effective technique for controlling the electrical and optical parameters of the compound ZnGeP₂.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 122–130, August, 1986.     

Local fluctuation of the spectrum of a multidimensional Anderson tight binding model

We consider the Anderson tight binding modelH=–+V acting inl ²(Z ^d ) and its restrictionH to finite hypercubes Z ^d . HereV={V _x ;xZ ^d } is a random potential consisting of independent identically distributed random variables. Let {E _j ()} _j be the eigenvalues ofH , and let _j (,E)=||(E _j ()–E),j1, be its rescaled eigenvalues. Then assuming that the exponential decay of the fractional moment of the Green function holds for complex energies nearE and that the density of statesn(E) exists atE, we shall prove that the random sequence { _j (,E)} _j , considered as a point process onR ¹, converges weakly to the stationary Poisson point process with intensity measuren(E)dx as gets large, thus extending the result of Molchanov proved for a one-dimensional continuum random Schrödinger operator. On the other hand, the exponential decay of the fractional moment of the Green function was established recently by Aizenman, Molchanov and Graf as a technical lemma for proving Anderson localization at large disorder or at extreme energy. Thus our result in this paper can be summarized as follows: near the energyE where Anderson localization is expected, there is no correlation between eigenvalues ofH if is large.     

Behavior of copper in gallium arsenide with high tin concentration

Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·10¹⁸ cm^–3, 1.5·10¹⁷ cm^–3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAsSnCu is associated with radiative transitions of electrons to centers with _a =E_v + 0.175 eV. The hole lifetime in GaAsSnCu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 58–63, September, 1980.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

An investigation was made into the electrical and photoelectric properties of gallium arsenide with an initial electron density 5×10¹⁵–4×10¹⁷ cm^–3 doped with Mn in different thermodynamic diffusion regimes characterized by diffusion temperatures of 900 and 1000°C and arsenic vapor pressure 10^–2 and 10^–3 atm. The ionization energy and defect concentration were determined by a computer analysis of the equilibrium hole density determined from the Hall effect. Centers with ionization energy 0.08–0.10 eV were found, their concentration varying from 2×10¹⁹ to 2×10²⁰ cm^–3 depending on the diffusion temperature and the doping level of the original crystals. Data obtained by investigating the stationary intrinsic photoconductivity were used to determine a hole lifetime of t_p 10^–9 sec. The photoconductivity spectra were investigated in the range 0.5–2 eV at 77°K, and defects with ionization energy E_v + 0.6 eV were found in all samples. The impurity photoconductivity at wavelength 10.6 m was investigated. It was shown that GaAsMn can be used as a material for impurity photoresistors.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 15–19, March, 1981.     

Image-potential surface states on Ag(100): A reinvestigation

Employing inverse photoemission we have remeasured the energy dispersionE(k) of the lowest-lying image state on Ag(100) with improved energy resolution (electrons and photons, E=0.35 eV) andk-resolution (k<0.1 Å^–1). In a least-square fit with the binding energyE _B atk=0 and the effective massm ^* as parameters we obtainE _B =E _vac –0.67 eV andm ^*=1.5 m in agreement with our earlier findings but differing from the two-photon photoemission values (0.53 eV and 1.15 m).     

Ground state energies of doubly even nuclei

Ground state energies of doubly even nuclei which are assumed to be composed of rigid and structureless alpha-particles are calculated. The alpha-particles are assumed to be interacting through a potential composed of a hard core followed by a square well potential in one set of calculations and a Gaussian potential in another set of calculations. Our calculations support the existence of the hard core in the alpha-alpha potential, and suggest the existence of the alphaclustering in doubly even light nuclei.From the graph betweenE ₀/N and we find thatE ₀/N is minimum at =2·57×10³⁷ particles cm^–3. This means that in the surface region an assembly of alpha-particles with = = 2·57×10³⁷ particles cm^–3 is the most stable one.We are greatly indebted to Professors R. Tamagaki, M. Harada and F. Iwamote for making very useful suggestions and for making a few points clear to us. Thanks are also due to Professors P. C. Sood, S. Duttamazumdar and M. K. Pal for many helpful discussinos, and to the Indian National Science Academy, New Delhi for giving financial assistance. Thanks are also due to Shri A. N. Phukan for drawing the graphs.     

Ideals and solutions of nonlinear field equations

Families of horizontal ideals of contact manifolds of finite order are studied. Each horizontal ideal is shown to admit ann-dimensional module of Cauchy characteristic vectors that is also a module of annihilators (in the sense of Cartan) of the contact ideal. Since horizontal ideals are generated by 1-forms, any completely integrable horizontal ideal in the family leads to a foliation of the contact manifold by submanifolds of dimensionn on which the horizontal ideal vanishes. Explicit conditions are obtained under which an open subset of a leaf of this foliation is the graph of a solution map of the fundamental ideal that characterizes a given system of partial differential equations of finite order withn independent variables. The solution maps are obtained by sequential integration of systems of autonomous ordinary differential equations that are determined by the Cauchy characteristic vector fields for the problem. We show that every smooth solution map can be obtained in this manner. Let {_Vi¦1in} be a basis for the module of Cauchy characteristic vector fields that are in Jacobi normal form. If a subsidiary balance ideal admits each of then vector fieldsV _i as a smooth isovector field, then certain leaves of the foliation generated by the corresponding closed horizontal ideal are shown to be graphs of solution maps of the fundamental ideal. A subclass of these constructions agree with those of the Cartan-Kähler theorem. Conditions are also obtained under which every leaf of the foliation is the graph of a solution map. Solving a given system ofr partial differential equations withn independent variables on a first-order contact manifold is shown to be equivalent to the problem of constructing a complete system of independent first integrals. Properties of systems of first integrals are analyzed by studying the collection ISO[A _ij ] of all isovectors of the horizontal ideal. We show that ISO[A _ij ] admits the direct sum decomposition ^*[A _ij ]W[A _ij ] as a vector space, where ^*[A _ij ] is the module of Cauchy characteristics of the horizontal ideal. ISO[A _ij ] also forms a Lie algebra under the standard Lie product,^*[A _ij ] andW[A _ij ] are Lie subalgebras of ISO[A _ij ], and [A _ij ] is an ideal. A change of coordinates that resolves (straightens out) the canonical basis for ^*[A _ij ] is constructed. This change of coordinates is used to reduce the problem of solving the given system of PDE to the problem of root extraction of a system ofr functions ofn variables, and to establish the existence of solutions to a second-order system of overdetermined PDE that generate the subspaceW[A _ij ]. Similar results are obtained for second-order contact manifolds. Extended canonical transformations are studied. They are shown to provide algorithms for calculating large classes of closed horizontal ideals and a partial analog of classical Hamilton-Jacobi theory.     

Frequency Dependence of the Components of Dielectric Permeability and Characteristic Losses of Fluorite

The ₁(E), –Im^–1, and Re^–1 spectra of the fluorite crystal are calculated on the basis of the experimental (10–35 eV) and theoretical spectra ₂(E) (10–27 and 8–20 eV). They were employed to decompose the ₂(E) and –Im^–1 spectra into elementary components. The most intense transverse and longitudinal components of transitions and their parameters have been determined. The correlation between two types of components of transitions and their distinguishing features have been established.     

Spectral properties of Kirkwood-Salsburg and Kirkwood-Ruelle operators

A method for solving Kirkwood-type equations in Banach spacesE () andE ^S () is applied to derive spectral properties of Kirkwood-Salsburg and Kirkwood-Ruelle operators in these spaces. For stable interactions these operators are shown to have, besides the point spectrum, a residual one. We establish also that the residual spectrum may disappear if a superstable (singular) interaction between particles is switched on. In this case the bounded Kirkwood-Salsburg operator is proved to have a zero Fredholm radius.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Optical and photoelectric properties of GeSe in the energy range 0·5–1·5 eV

It is possible to deduce from the optical and photoelectric measurements of a GeSe single crystal that the absorption of light near the absorption edge corresponds to the indirect forbidden transitions as may be proved by the dependenceK (E-E _i )³. The energy gap isE _g= =(1·10±0·02) eV at room temperature and does not depend on the crystal orientation. The photoconductivity of a GeSe single crystal is relatively high. The interpretation of the photoconductivity measurements confirms the conclusions drawn from optical measurements. The paper is dedicated to the memory of Dr. A. Vaíek, Professor of the J. E. Purkyn University in Brno, who died on November 16, 1966.In conclusion the author would like to express his gratitude to Dr. F. Kosek from the Technical University in Pardubice for the GeSe single crystals and to Dr. J. Kubna from the Department of Solid State Physics, Faculty of Science, Purkyn University in Brno, for the X-ray analysis of the crystals.     

A study of the photoluminescence of crystals of the hexagonal modification of Β-Ga2As3

The excitation and radiation spectra of-Ga₂As₃ crystals have been studied. The radiation spectrum consists of two overlapping bands (1.44 and 1.61 eV) and a very weak band in the 2.8–2.9 eV region. The temperature dependence of the halfwidth of the luminescence bands was studied and the position of the levels responsible for the luminescence were determined: E_1,v = 0.84 eV and E_2,v = 0.59 eV. These luminescence bands in -Ga₂As₃ crystals undergo thermal quenching. The kinetics of the photoconductivity and the photoluminescence were studied and it was shown that the recombination of nonequilibrium carriers occurs by two channels: via fast s levels and slow r levels, the trapping cross section of the latter being .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 72–75, September, 1972.     

High power splitting of the cyclotron resonance induced photoconductivity in n-GaAs

Conclusion In summary our results show that photoconductivity and optical absorption under cyclotron resonance conditions in high purity n-GaAs are more complex than it has been assumed previously. As cyclotron resonance can only be measured with non zero free electron concentration, and because the 2p _– shallow donor level remains below the N=0 Landau level for all magnetic field strengths, a certain population of 2p _– states must be present and thus the interference between both absorption processes is unavoidable as long as 2p _–2p ₊ electric dipole transitions are activated by ionized impuritics. This interference gets most drastically manifest at high intensities causing an apparent splitting of the photoconductivity line. Even at lower intensities however when the dip in the photoconductivity line is not observable, all optical characteristics previously attributed to cyclotron resonance are affected by the shallow donor absorption. The energy separationE _2p+–E _2p– of shallow donors in a magnetic field is exactly equal to w _CR only for isolated impurities in the effective mass approximation. The same electric stray field of ionized impurities which cause the activation of 2p _–2p ₊ absorption may shift the donor energy levels due to stark effect. For magnetic field strengthsB<1 T a field dependent deviation ofE _{2 +}–E _{1p –} from the cyclotron resonance quantum energy was observed [15] amounting up to 8 pc. In this case we expect that the peak positions of photoconductivity and absorption do not spectrally coincide and do not occur at the resonance magnetic field strength of 01 Landau level transitions. Thus effective masses determined by standard cyclotron resonance methods at low magnetic fields may be incorrect by a few percent.     

The low energy scattering for slowly decreasing potentials

For the radial Schrödinger equation with a potentialq(x) decreasing at infinity asq ₀ q ^–, (0, 2), the low energy asymptotics of spectral and scattering data is found. In particular, it is shown that forq ₀>0 the spectral function vanishes exponentially as the energyk ² tends to zero. On the contrary, there is always a zero-energy resonance forq ₀<0. These results determine the local asymptotics of solutions of the time-dependent Schrödinger equation for large timest. Specifically, for positive potentials its solutions decay as exp(–₀ t ^(2–)/(2+), ₀>0,t. In the case (1, 2) it is shown that for ±q ₀>0 the phase shift tends to ± ask0 and its asymptotics is evaluated.     

The electrical performance of thinn +-window layers ina-Si: H solar cells

The electrical properties ofn ⁺-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn ⁺-layer thickness, , by measuring firstly the activation energyE _a of the dark conductivity and secondly the built-in potentialV _bi of the cells.E _a was found to increase with decreasing attaining values as high as 0.8 eV for 5nm; bulk values, e.g.E _a . 2eV in the amorphous andE _a<0.01 eV in the microcrystalline case, were only observed for >20nm and for >200nm, respectively. In contrast,V _bi did not depend on at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn ⁺ andp ⁺-material. As a consequenceE _a in very thin films can no longer be considered as a measure of (E _C –E _F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE _a and theV _bi results can be resolved by assuming that the deposition of then ⁺-material proceeds via the growth and coalescence of small islands.