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1.
The ground state geometry and electronic structure of various 4d transition metal (TM) atom (Y, Zr, Nb and Mo) decorated single wall carbon nanotubes (SWCNTs) are obtained using density functional theory and the projector augmented wave (PAW) method. We found a systematic change in the adsorption site of the transition metal atom with increasing number of d electrons. We also predicted that Y and Zr decorated SWCNTs are metallic whereas Nb and Mo decorated SWCNTs are semiconducting. From detailed electronic structure and Bader charge analysis we found that the systematic variation of the adsorption site with the number of d electrons is related to the decreasing amount of charge transfer from the TM atom to the SWCNT along the 4d series. We have also studied the hydrogen adsorption capabilities of these decorated SWCNTs to understand the role of transition metal d electrons in binding the hydrogen molecules to the system. We found that metallic SWCNT + TM systems are better hydrogen adsorbers. We showed that the hydrogen adsorption by a TM decorated SWCNT will be maximum when all the adsorptions are physisorption and that the retention of magnetism by the system is crucial for physisorption.  相似文献   

2.
Structural, electronic and magnetic properties of six 3d transition metals (TM=V, Cr, Mn, Fe, Co and Ni) linear monoatomic chains adsorbed on the (5,5) boron nitride nanotube (BNNT) at five different sites have been investigated by first-principle calculations. The results indicate all TM chains can be spontaneously adsorbed on the outer surface of the BNNT. The stable adsorption sites are different for different TM chains. All TM chains can be adsorbed on the N site, while the adsorption on the Z site is unstable. The dispersion character occurs in energy band curves of stable TM/BNNT systems and bring about the band gap disappearance in comparison with that of pure (5,5) BNNT. Interestingly, the TM/BNNT systems with nearly half-filled 3d metals V and Cr at H and N sites, as well as Mn at A site show a half-metal character and are usable in spintronics devices. The different electronic properties of BNNT can also be achieved through decorations of the same TM chain on different sites. The TM chain adsorbed BNNT systems exhibit high stability, promising electronic properties and high magnetic moments, which may be useful for a wide variety of next-generation nanoelectronic device components.  相似文献   

3.
罗佳  向钢  余天  兰木  张析 《中国物理 B》2016,25(9):97305-097305
By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal(TM) atoms(from Sc to Zn) adsorbed monolayer Ga As nanosheets(Ga As NSs) are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor(Sc,V,and Fe adsorption),a half-metal(Mn adsorption),or a metal(Co and Cu adsorption).Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.  相似文献   

4.
The magnetic and electronic properties of TM (TM=Cr, Mn, and Fe) adatoms adsorption on Si(001) surface are studied by means of the first-principles method. For the adsorption of a single TM atom on Si(001), we obtain decreasing spin moments and increasing adsorption energies as TM varies from Cr to Fe. In the case of TM dimers adsorption, the calculated results show that the spin coupling changes from antiferromagnetic (AFM) to ferromagnetic (FM) as the 3d electrons increased. AFM coupling is found to be preferred for Cr, while FM coupling is energetically favorable for Mn and Fe. In the case of TM wires, we find that the FM state is energetically preferred for Mn and Fe atoms on the Si(001) surface, while for Cr wires, the up–down–up state for P–M–M site Cr atoms seems to be more energy favorable. We also find that the silicon surfaces become metallic for the adsorption of TM wires.  相似文献   

5.
We performed first-principles calculations to study the electronic structures and magnetic properties of the two-dimensional AlN nanosheet decorated with hydrogen and fluorine. The results show that the band gap of AlN nanosheet can be tuned significantly, and they can be a direct or an indirect semiconductor when decorated with H or F atoms on AlN surface. Spin-polarized calculations show that semi-decorated AlN sheets with H or F atoms can present a half-metal or p-type ferromagnetic (FM) semiconductor with Curie temperatures above room temperature. More interestingly, when AlN nanosheet co-decorated with H and F on each side, they show anisotropic semiconducting characters with a band gap of 1.02 eV. Our studies demonstrate that the decoration III-V group semiconductor nanosheets with foreign atoms might be an efficient route to tune the electronic and magnetic properties in low-dimensional materials.  相似文献   

6.
ABSTRACT

XMCD under pressure is used to study the magnetic properties of the transition metal (TM) systems for over 15 years. We present the technique and how it has been developed. The energy dispersive XAS spectrometer is particularly suited for these studies. The effect of pressure on TM magnetism is discussed. Recent studies performed at different edges illustrate the information that can be obtained through XMCD. Finally, some results obtained on TMs are presented, either at the LII,III edges of 5d metals or at the K edge of 3d metals, which correspond to the energy ranges that can be probed when using diamond anvil cells for high pressure. Different cases are treated: pure 3d metals, alloys, magnetic insulator and inorganic compounds.  相似文献   

7.
We report a comparative study of the magnetic properties of free-standing PdN clusters (2 ≤N ≤21) obtained through two different theoretical approaches that are extensively employed in electronic structure calculations: a semi-empirical Tight-Binding (TB) model and an ab-initio DFT pseudopotential model. Conclusions are drawn about the reliability of the TB model for the investigation of the electronic structure and magnetic properties of such complex 4d Transition Metals (TM) systems and we compare the results with previous systematic DFT calculations and comment on some available experiments in the literature.  相似文献   

8.
Under the generalized gradient approximation (GGA), the electronic and magnetic properties are studied for H-terminated zigzag edge Si nanoribbon (ZSiNR) decorated with a single C chain by using the first-principles projector augmented wave (PAW) potential within the density function theory (DFT) framework. The results show that either a perfect ZSiNR or a single C chain decorated ZSiNR, the ferromagnetic state is preferred over the antiferromagnetic state. But a single C chain decorated ZSiNR is more stable than the perfect one. Furthermore, the electronic and magnetic properties of a ZSiNR can be modulated in detail by a single C chain at different positions.  相似文献   

9.
A systemic theoretical study of one iron atom on graphene ribbon edges (Fe/GR) has been carried out by using density functional theory. Thermodynamic stabilities, electronic and magnetic properties of Fe/GR with different edge types and adsorption locations were investigated. According to the Clar's aromatic sextet rule, the formation energies and density of states of Fe atom are found to rely tightly on the ribbon's periodic length. Moreover, Fe atoms on reconstructed zz edges are also stable with low formation energies and semiconducting properties. Finally, the magnetic properties are found sensitive with the structural details, especially the local bond environment. The present theoretical results constitute a useful picture for the deep comprehending on the interface details of the lateral Fe/graphene heterostructures.  相似文献   

10.
The structural, electronic and magnetic properties of pristine and oxygen-adsorbed (3,0) zigzag and (6,1) armchair graphene nanoribbons have been investigated theoretically, by employing the ab initio pseudopotential method within the density functional scheme. The zigzag nanoribbon is more stable with antiferromagnetically coupled edges, and is semiconducting. The armchair nanoribbon does not show any preference for magnetic ordering and is semiconducting. The oxygen molecule in its triplet state is adsorbed most stably at the edge of the zigzag nanoribbon. The Stoner metallic behaviour of the ferromagnetic nanoribbons and the Slater insulating (ground state) behaviour of the antiferromagnetic nanoribbons remain intact upon oxygen adsorption. However, the local magnetic moment of the edge carbon atom of the ferromagnetic zigzag ribbon is drastically reduced, due to the formation of a spin-paired C-O bond.  相似文献   

11.
First-principle calculations have been performed to study the sensing of CO gas in various considered configurations. The adsorption of CO on zigzag BN nanoribbon (ZBNNR) and zigzag AlN nanoribbon (ZAlNNR) was modelled in five different possibilities. The effect of CO adsorption is to reduce the band gap in both types (BN/AlN) of the nanoribbons. Interestingly, a finite magnetic moment (0.96 μB for ZBNNR and 0.69 μB for ZAlNNR) has been obtained which depends upon the adsorption configuration of CO. Half-metallicity was also observed upon selective CO adsorption on ZAlNNR irrespective of the ribbon width. Present findings suggest that CO gas molecules could be detected through adsorption on BN/AlN nanoribbons via changes in electronic and/or magnetic properties.  相似文献   

12.
13.
Hitesh Sharma  S Prakash 《Pramana》2007,68(4):655-677
We present here a systematic investigation of the atomic displacements in bcc transition metal (TM) dilute alloys. We have calculated the atomic displacements in bcc (V, Cr, Fe, Nb, Mo, Ta and W) transition metals (TMs) due to 3d, 4d and 5d TMs at the substitutional site using the Kanzaki lattice static method. Wills and Harrison interatomic potential is used to calculate the atomic force constants, the dynamical matrix and the impurity-induced forces. We have thoroughly investigated the atomic displacements using impurities from 3d, 4d and 5d series in the same host metal and the same impurity in different hosts. We have observed a systematic pattern in the atomic displacements for Cr-, Fe-, Nb-, Mo-, Ta-and W-based dilute alloys. The atomic displacements are found to increase with increase in the number of d electrons for all alloys considered except for V dilute alloys. The 3d impurities are found to be more easily dissolved in the 3d host metals than 4d or 5d TMs whereas 4d and 5d impurities show more solubility in 4d and 5d TMs. In general, the relaxation energy calculation suggests that impurities may be easily solvable in 5d TM hosts when compared to 3d or 4d TMs.   相似文献   

14.
使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V,Cr,Mn,Fe,Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现:用V,Cr和Mn掺杂时体系将出现铁磁状态,而Fe掺杂时将出现反铁磁状态,Co和Ni掺杂时,其磁性则不稳定.其中,Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中,V离子的磁矩大于理论期待值,Fe,Co和Ni离子的磁矩小于理论期待值,Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外,使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂,将有利于DMS表现为铁磁状态,并可以使体系的TC进一步提高. 关键词: 稀磁半导体 过渡金属 掺杂 共掺杂  相似文献   

15.
Ferromagnetic ordering of silver impurities in the AlN semiconductor is predicted by plane-wave ultrasoft pseudopotential and spin-polarized calculations based on density functional theory (DFT). It was found that an Ag impurity atom led to a ferromagnetic ground state in Ag0.0625Al0.9375N, with a net magnetic moment of 1.95 μB per supercell. The nitrogen neighbors at the basal plane in the AgN4 tetrahedron are found to be the main contributors to the magnetization. This magnetic behavior is different from the ones previously reported on transition metal (TM) based dilute magnetic semiconductor (DMS), where the magnetic moment of the TM atom impurity is higher than those of the anions bonded to it. The calculated electronic structure band reveals that the Ag-doped AlN is p-type ferromagnetic semiconductor with a spin-polarized impurity band in the AlN band gap. In addition, the calculated density of states reveals that the ferromagnetic ground state originates from the strong hybridization between 4d-Ag and 2p-N states. This study shows that 4d transition metals such as silver may also be considered as candidates for ferromagnetic dopants in semiconductors.  相似文献   

16.
Ma D  Lu Z  Ju W  Tang Y 《J Phys Condens Matter》2012,24(14):145501
BN sheets with absorbed transition metal (TM) single atoms, including Fe, Co, and Ni, and their dimers have been investigated by using a first-principles method within the generalized gradient approximation. All of the TM atoms studied are found to be chemically adsorbed on BN sheets. Upon adsorption, the binding energies of the Fe and Co single atoms are modest and almost independent of the adsorption sites, indicating the high mobility of the adatoms and isolated particles to be easily formed on the surface. However, Ni atoms are found to bind tightly to BN sheets and may adopt a layer-by-layer growth mode. The Fe, Co, and Ni dimers tend to lie (nearly) perpendicular to the BN plane. Due to the wide band gap of the pure BN sheet, the electronic structures of the BN sheets with TM adatoms are determined primarily by the distribution of TM electronic states around the Fermi level. Very interesting spin gapless semiconductors or half-metals can be obtained in the studied systems. The magnetism of the TM atoms is preserved well on the BN sheet, very close to that of the corresponding free atoms and often weakly dependent on the adsorption sites. The present results indicate that BN sheets with adsorbed TM atoms have potential applications in fields such as spintronics and magnetic data storage due to the special spin-polarized electronic structures and magnetic properties they possess.  相似文献   

17.
The electronic structures and magnetic properties of Pd-doped CdS have been studied by a first principles study. We find that the material becomes 100% spin-polarized when Pd substitutes for Cd atom in a 3×3×2 CdS supercell, and forms a diluted magnetic semiconductor (DMS). A long-range ferromagnetic (FM) coupling is obtained between two Pd dopants. We concluded that the hybridized Pd(4d)–S(3p)–Cd(4d)–S(3p)–Pd(4d) chain through p–d coupling is responsible for the long-range FM coupling.  相似文献   

18.
The structural, electronic and magnetic properties of hcp transition metal (TM = Fe, Co or Ni) nanowires TM4 encapsulated inside zigzag nanotubes C(m, 0) (m = 7, 8, 9, 10, 11 or 12), along with TM n (n = 4, 10 or 13) encapsulated inside C(12, 0), have been systematically investigated using the first-principle calculations. The results show that the TM nanowires can be inserted inside a variety of zigzag carbon nanotubes (CNTs) exothermically, except from the systems TM4@(7, 0) and TM13@(12, 0) which are endothermic. The charge is transferred from TM nanowires to CNTs, and the transferred charge increases with decreasing CNT diameter or increasing nanowire thickness. The magnetic moments of hybrid systems are smaller than those of the freestanding TM nanowires, especially for the atoms on the outermost shell of the nanowires. The magnetic moment per TM atom of TM/CNT system increases with increasing CNT diameter or decreasing nanowire thickness. Both the density of states and spin charge density analysis show that the spin polarization and the magnetic moments of all hybrid systems mainly originate from the TM nanowires, implying these systems can be applied in magnetic data storage devices.  相似文献   

19.
We have systematically investigated the growth behavior and stability of small stoichiometric (TiO(2))(n) (n = 1-10) clusters as well as their structural, electronic and magnetic properties by using the first-principles plane wave pseudopotential method within density functional theory. In order to find out the ground state geometries, a large number of initial cluster structures for each n has been searched via total energy calculations. Generally, the ground state structures for the case of n = 1-9 clusters have at least one monovalent O atom, which only binds to a single Ti atom. However, the most stable structure of the n = 10 cluster does not have any monovalent O atom. On the other hand, Ti atoms are at least fourfold coordinated for the ground state structures for n ≥ 4 clusters. Our calculations have revealed that clusters prefer to form three-dimensional structures. Furthermore, all these stoichiometric clusters have nonmagnetic ground state. The formation energy and the highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap for the most stable structure of (TiO(2))(n) clusters for each n have also been calculated. The formation energy and hence the stability increases as the cluster size grows. In addition, the interactions between the ground state structure of the (TiO(2))(n) cluster and a single water molecule have been studied. The binding energy (E(b)) of the H(2)O molecule exhibits an oscillatory behavior with the size of the clusters. A single water molecule preferably binds to the cluster Ti atom through its oxygen atom, resulting an average binding energy of 1.1 eV. We have also reported the interaction of the selected clusters (n = 3, 4, 10) with multiple water molecules. We have found that additional water molecules lead to a decrease in the binding energy of these molecules to the (TiO(2))(n) clusters. Finally, the adsorption of transition metal (TM) atoms (V, Co and Pt) on the n = 10 cluster has been investigated for possible functionalization. All these elements interact strongly with this cluster, and a permanent magnetic moment is induced upon adsorption of Co and V atoms. We have observed gap localized TM states leading to significant HOMO-LUMO gap narrowing, which is essential to achieve visible light response for the efficient use of TiO(2) based materials. In this way, electronic and optical as well as magnetic properties of TiO(2) materials can be modulated by using the appropriate adsorbate atoms.  相似文献   

20.
采用基于密度泛函理论的第一性原理计算方法,系统研究了3d过渡金属元素(Sc、Ti、Cr、Mn、Co、Cu和Zn)掺杂Cd12O12纳米线的几何结构,电子结构和磁性。结果表明:所有掺杂体系均是热力学稳定的;掺杂Ti或Zn时体系保留了原有的非磁半导体特性,掺杂Mn、Co或Cu时能够实现磁性半导体态,而在掺杂Sc(Cr)时体系转变为非磁性金属态(磁性金属态)。研究结果表明,掺杂3d过渡金属元素的Cd12O12纳米线在电子、光电和自旋电子学领域具有潜在的应用价值。  相似文献   

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