Pressure enhanced conductivity in bis-1,2,3-thiaselenazolyl dimers

A synthetic sequence to salts of N-alkylated pyridine-bridged 1,2,3-thiaselenazolo-1,2,3-thiaselenazolylium cations [2]+ (R1 = Me, Et; R2 = H) is described. The corresponding radicals 2 (R1 = Me, Et; R2 = H) can be generated from the cations by chemical or electrochemical reduction. Crystals of the two radicals are isostructural and consist of interpenetrating pi-stacked arrays of closed-shell Se-Se sigma-bonded dimers [2]2 laced together with numerous short intermolecular Se- - -Se, Se- - -S, and Se- - -N contacts. Variable-temperature magnetic, conductivity, and near-infrared optical measurements indicate that the bulk materials behave as small band gap semiconductors with room-temperature conductivities sigma(RT) near 10(-6) S cm(-1) and thermal activation energies Ea of 0.32 eV (R1 = Me) and 0.36 eV (R1 = Et). LMTO band structure calculations on both compounds are consistent with this interpretation. The application of external pressure leads to dramatic increases in conductivity; at 4 GPa sigma(RT) reaches a value near 10(-1) S cm(-1) for R1 = Me and 10(-2) S/cm for R1 = Et. The conductivity remains activated for both compounds, but for R1 = Me the activation energy Ea is reduced to near 0.03 eV at 5 GPa, suggestive of a weakly metallic state.     

Enhanced conductivity and magnetic ordering in isostructural heavy atom radicals

Synthetic methods have been developed to generate the complete series of resonance-stabilized heterocyclic thia/selenazyl radicals 1a-4a. X-ray crystallographic studies confirm that all four radicals are isostructural, belonging to the tetragonal space group P42(1)m. The crystal structures consist of slipped pi-stack arrays of undimerized radicals packed about 4 centers running along the z direction, an arrangement which gives rise to a complex lattice-wide network of close intermolecular E2---E2' contacts. Variable temperature conductivity (sigma) measurements reveal an increase in conductivity with increasing selenium content, particularly so when selenium occupies the E2 position, with sigma(300 K) reaching a maximum (for E1 = E2 = Se) of 3.0 x 10(-4) S cm(-1). Thermal activation energies E(act) follow a similar profile, decreasing with increasing selenium content along the series 1a (0.43 eV), 3a (0.31 eV), 2a (0.27 eV), 4a (0.19 eV). Variable temperature magnetic susceptibility measurements indicate that all four radicals exhibit S = 1/2 Curie-Weiss behavior over the temperature range 20-300 K. At lower temperatures, the three selenium-based radicals display magnetic ordering. Radical 3a, with selenium positioned at the E1 site, undergoes a phase transition at 14 K to a weakly spin-canted (phi = 0.010 degrees) antiferromagnetic state. By contrast, radicals 2a and 4a, which both possess selenium in the E2 position, order ferromagnetically, with Curie temperatures of T(c) = 12.8 and 17.0 K, respectively. The coercive fields H(c) at 2 K of 2a (250 Oe) and 4a (1370 Oe) are much larger than those seen in conventional light atom organic ferromagnets. The transport properties of the entire series 1a-4a are discussed in the light of Extended Hückel Theory band structure calculations.     

Crossing the insulator-to-metal barrier with a thiazyl radical conductor

The layered-sheet architecture of the crystal structure of the fluoro-substituted oxobenzene-bridged bisdithiazolyl radical FBBO affords a 2D π-electronic structure with a large calculated bandwidth. The material displays high electrical conductivity for a f = 1/2 system, with σ(300 K) = 2 × 10(-2) S cm(-1). While the conductivity is thermally activated at ambient pressure, with E(act) = 0.10 eV at 300 K, indicative of a Mott insulating state, E(act) is eliminated at 3 GPa, suggesting the formation of a metallic state. The onset of metallization is supported by infrared measurements, which show closure of the Mott-Hubbard gap above 3 GPa.     

Hysteretic spin crossover between a bisdithiazolyl radical and its hypervalent σ-dimer

The bisdithiazolyl radical 1a is dimorphic, existing in two distinct molecular and crystal modifications. The α-phase crystallizes in the tetragonal space group P4?2(1)m and consists of π-stacked radicals, tightly clustered about 4? points and running parallel to c. The β-phase belongs to the monoclinic space group P2(1)/c and, at ambient temperature and pressure, is composed of π-stacked dimers in which the radicals are linked laterally by hypervalent four-center six-electron S···S-S···S σ-bonds. Variable-temperature magnetic susceptibility χ measurements confirm that α-1a behaves as a Curie-Weiss paramagnet; the low-temperature variations in χ can be modeled in terms of a 1D Heisenberg chain of weakly coupled AFM S = (1)/(2) centers. The dimeric phase β-1a is essentially diamagnetic up to 380 K. Above this temperature there is a sharp hysteretic (T↑= 380 K, T↓ = 375 K) increase in χ and χT. Powder X-ray diffraction analysis of β-1a at 393 K has established that the phase transition corresponds to a dimer-to-radical conversion in which the hypervalent S···S-S···S σ-bond is cleaved. Variable-temperature and -pressure conductivity measurements indicate that α-1a behaves as a Mott insulator, but the ambient-temperature conductivity σ(RT) increases from near 10(-7) S cm(-1) at 0.5 GPa to near 10(-4) S cm(-1) at 5 GPa. The value of σ(RT) for β-1a (near 10(-4) S cm(-1) at 0.5 GPa) initially decreases with pressure as the phase change takes place, but beyond 1.5 GPa this trend reverses, and σ(RT) increases in a manner which parallels the behavior of α-1a. These changes in conductivity of β-1a are interpreted in terms of a pressure-induced dimer-to-radical phase change. High-pressure, ambient-temperature powder diffraction analysis of β-1a confirms such a transition between 0.65 and 0.98 GPa and establishes that the structural change involves rupture of the dimer in a manner akin to that observed at high temperature and ambient pressure. The response of the S···S-S···S σ-bond in β-1a to heat and pressure is compared to that of related dimers possessing S···Se-Se···S σ-bonds.     

Prototypal dithiazolodithiazolyl radicals: synthesis, structures, and transport properties

New synthetic routes to 1,2,3-dithiazolo-1,2,3-dithiazolylium salts, based on double Herz condensations of N-alkylated 2,6-diaminopyridinium salts with sulfur monochloride, have been developed. The two prototypal 1,2,3-dithiazolo-1,2,3-dithiazolyl radicals HBPMe and HBPEt have been prepared and characterized in solution by cyclic voltammetry and EPR spectroscopy. Measured electrochemical cell potentials and computed (B3LYP/6-31G) gas-phase disproportionation enthalpies favor a low on-site Coulombic repulsion energy U in the solid state. The crystal structures of HBPR (R = Me, Et) have been determined by X-ray crystallography (at 293 K). Both consist of slipped pi-stacks of undimerized radicals, with many close intermolecular S- - -S contacts. Magnetic, conductivity, and optical measurements have been performed and the results interpreted in light of extended Hückel band calculations. The crystalline materials are paramagnetic above 100 K, with room-temperature conductivities sigma(RT) of 10(-5)-10(-6) S cm(-1); the slightly greater conductivity of the R = Et compound can be associated with a more well developed band structure. We suggest a Mott-Hubbard insulator ground state for these materials, with an on-site Coulomb repulsion energy U of about 1.0 eV.     

Syntheses, structures, physical properties, and theoretical studies of CeMxOS (M = Cu, Ag; x approximately 0.8) and CeAgOS

Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCu(x)OS and CeAg(x)OS (x approximately 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu(0.8)OS and CeAgOS are paramagnetic with mu(eff) values of 2.13(6) and 2.10(1) mu(B), respectively. CeCu(0.8)OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, sigma(electrical) = 9.8(1) 10(-3) S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity sigma(conductivity) = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu(0.75)OS, or CeAgOS. Calculated band gaps for CeCu(0.75)OS and CeAgOS are 0.6 and 0.8 eV, respectively.     

From magnets to metals: the response of tetragonal bisdiselenazolyl radicals to pressure

The bromo-substituted bisdiselenazolyl radical 4b (R(1) = Et, R(2) = Br) is isostructural with the corresponding chloro-derivative 4a (R(1) = Et, R(2) = Cl), both belonging to the tetragonal space group P(4)2(1)m and consisting of slipped π-stack arrays of undimerized radicals. Variable temperature, ambient pressure conductivity measurements indicate a similar room temperature conductivity near 10(-4) S cm(-1) for the two compounds, but 4b displays a slightly higher thermal activation energy E(act) (0.23 eV) than 4a (0.19 eV). Like 4a, radical 4b behaves as a bulk ferromagnet with an ordering temperature of T(C) = 17.5 K. The coercive field H(c) (at 2 K) of 1600 Oe for 4b is, however, significantly greater than that observed for 4a (1370 Oe). High pressure (0-15 GPa) structural studies on both compounds have shown that compression reduces the degree of slippage of the π-stacks, which gives rise to changes in the magnetic and conductive properties of the radicals. Relatively mild loadings (<2 GPa) cause an increase in T(C) for both compounds, that of 4b reaching a maximum value of 24 K; further compression to 5 GPa leads to a decrease in T(C) and loss of magnetization. Variable temperature and pressure conductivity measurements indicate a decrease in E(act) with increasing pressure, with eventual conversion of both compounds from a Mott insulating state to one displaying weakly metallic behavior in the region of 7 GPa (for 4a) and 9 GPa (for 4b).     

A pi-stacked 1,2,3-dithiazolyl radical. Preparation and solid state characterization of (Cl2C3NS)(ClC2NS2)

Crystals of (Cl2C3NS)(ClC2NS2), an isothiazolyl-substituted 1,2,3-dithiazolyl radical, consist of evenly spaced, slipped pi-stacks; magnetic and conductivity measurements indicate the material is a Mott insulator with sigma RT = 2 x 10(-7) S cm-1.     

High Compression-Induced Conductivity in a Layered Cu–Br Perovskite

We show that the onset pressure for appreciable conductivity in layered copper-halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10⁻⁴ S cm⁻¹, whereas here a Cu–Br congener, (EA)₂CuBr₄ (EA=ethylammonium), exhibits conductivity as high as 2×10⁻³ S cm⁻¹ at only 2.6 GPa, and 0.17 S cm⁻¹ at 59 GPa. Substitution of higher-energy Br 4p for Cl 3p orbitals lowers the charge-transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High-pressure X-ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression-induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression-induced conductivity of Cu-halide perovskites to more technologically accessible pressures.     

Ferromagnetic ordering in bisthiaselenazolyl radicals: variations on a tetragonal theme

A series of five isostructural bisthiaselenazolyl radicals 2 have been prepared and characterized by X-ray crystallography. The crystal structures, all belonging to the tetragonal space group P42(1)m, consist of slipped pi-stack arrays of undimerized radicals packed about 4 centers running along the z-direction, an arrangement which gives rise to a complex lattice-wide network of close intermolecular Se---Se' contacts. Variations in R1 (Et, Pr, CH2CF3) with R2 = Cl lead to significant changes in the degree of slippage of the pi-stacks and hence the proximity of the Se---Se' interactions. By contrast, variations in R2 (Cl, Br, Me) with R1 = Et induce very little change in either the degree of slippage or the intermolecular contacts. Variable-temperature conductivity (sigma) measurements show relatively constant values for the conductivity sigma(300 K) (10(-5)-10(-4) S cm(-1)) and thermal activation energy E(act) (0.27-0.31 eV). Variable-temperature magnetic susceptibility measurements indicate that radicals 2b and 2c (R1 = Pr, CH2CF3; R2 = Cl) behave as weakly antiferromagnetically coupled Curie-Weiss paramagnets, but in 2a, 2d and 2e (R1 = Et; R2 = Cl, Me, Br) ferromagnetic ordering is observed, with T(c) values of 12.8 (R2 = Cl), 13.6 (R2 = Me), and 14.1 K (R2 = Br). The origin of the dramatically different magnetic behavior across the series has been explored in terms of a direct through-space mechanism by means of DFT calculations on individual pairwise exchange energies. These indicate that antiferromagnetic exchange between radicals along the pi-stacks increases with pi-stack slippage.     

High Compression‐Induced Conductivity in a Layered Cu–Br Perovskite

We show that the onset pressure for appreciable conductivity in layered copper‐halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10^?4 S cm^?1, whereas here a Cu–Br congener, (EA)₂CuBr₄ (EA=ethylammonium), exhibits conductivity as high as 2×10^?3 S cm^?1 at only 2.6 GPa, and 0.17 S cm^?1 at 59 GPa. Substitution of higher‐energy Br 4p for Cl 3p orbitals lowers the charge‐transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High‐pressure X‐ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression‐induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression‐induced conductivity of Cu‐halide perovskites to more technologically accessible pressures.     

Resonance-stabilized 1,2,3-dithiazolo-1,2,3-dithiazolyls as neutral pi-radical conductors

Alkylation of the zwitterionic heterocycle 8-chloro-bis[1,2,3]dithiazolo[4,5-b:5',4'-e]pyridine (ClBP) with alkyl triflates affords 8-chloro-4-alkyl-4H-bis[1,2,3]dithiazolo[4,5-b:5',4'-e]pyridin-2-ium triflates [ClBPR][OTf] (R = Me, Et, Pr). Reduction of these salts with decamethylferrocene affords the corresponding ClBPR radicals as thermally stable crystalline solids. The radicals have been characterized in solution by cyclic voltammetry and EPR spectroscopy. Measured electrochemical cell potentials and computed (B3LYP/6-31G) gas-phase disproportionation enthalpies are consistent with a low on-site Coulombic barrier U to charge transfer in the solid state. The crystal structures of ClBPR (R = Me, Et, Pr) have been determined by X-ray crystallography (at 293 K). All three structures consist of slipped pi-stacks of undimerized radicals, with many close intermolecular S.S contacts. ClBPMe undergoes a phase transition at 93 K to a slightly modified slipped pi-stack arrangement, the structure of which has also been established crystallographically (at 25 K). Variable-temperature magnetic and conductivity measurements have been performed, and the results interpreted in light of extended Hückel band calculations. The room-temperature conductivities of ClBPR systems (sigma(RT) approximately 10(-)(5) to 10(-)(6) S cm(-)(1)), as well as the weak 1D ferromagnetism exhibited by ClBPMe, are interpreted in terms of weak intermolecular overlap along the pi-stacks. The latter is caused by slippage of the molecular plates, a feature necessitated by the steric size of the R and Cl groups on the pyridine ring.     

Highly stable cooperative distortion in a weak Jahn-Teller d2 cation: perovskite-type ScVO3 obtained by high-pressure and high-temperature transformation from bixbyite

A novel ScVO(3) perovskite phase has been synthesized at 8 GPa and 1073 K from the cation-disordered bixbyite-type ScVO(3). The new perovskite has orthorhombic symmetry at room temperature, space group Pnma, and lattice parameters a = 5.4006(2) ?, b = 7.5011(2) ?, and c = 5.0706(1) ? with Sc(3+) and V(3+) ions fully ordered on the A and B sites of the perovskite cell. The vanadium oxygen octahedra [V-O(6)] display cooperative Jahn-Teller (JT) type distortions, with predominance of the tetragonal Q(3) over the orthorhombic Q(2) JT modes. The orthorhombic perovskite shows Arrhenius-type electrical conductivity and undergoes a transition to triclinic symmetry space group P-1 close to 90 K. Below 60 K, the magnetic moments of the 4 nonequivalent vanadium ions undergo magnetic long-range ordering, resulting in a magnetic superstructure of the perovskite cell with propagation vector (0.5, 0, 0.5). The magnetic moments are confined to the xz plane and establish a close to zigzag antiferromagnetic mode.     

Topochemical 3D polymerization of C60 under high pressure at elevated temperatures

Fullerene C60 monomer crystals were compressed to a face-centered cubic (fcc) phase with a lattice parameter of a = 11.93(5) A and a micro-Vickers hardness of 4500 kg/mm2 using high-pressure and high-temperature conditions of 15 GPa at 500-600 degrees C. The hardness is compatible with that of cubic boron nitride (c-BN), suggesting the formation of a 3D C60 polymer. The single-crystal X-ray structural analysis revealed that each C60 molecule in the polymer was linked to the 12 nearest neighbors by [2+2] cycloaddition between the common pentagon-hexagon (56) edges. However, ab initio geometry optimization and molecular dynamics calculations suggested that the 3D polymer should have a rhombohedral structure with the space group of R containing [3+3] cycloaddition between the pentagons of C60 molecules within the plane perpendicular to the 3-fold axis. The higher apparent symmetry of fcc was observed as an averaged structure of different orientations of the rhombohedral structure. The R structure can be derived by only a slight rotation of each C60 unit in the (111) plane of the fcc structure. The band-structure calculation suggested that the 3D polymer (R) was a semiconductor; the activation energy for the electrical conductivity was experimentally determined to be 0.25 eV at 550 K.     

Li2B12Si2: the first ternary compound in the system Li/B/Si: synthesis, crystal structure, hardness, spectroscopic investigations, and electronic structure

We present the synthesis, crystal structure, hardness, IR/Raman and UV/Vis spectra, and FP-LAPW calculations of the electronic structure of Li(2)B(12)Si(2), the first ternary compound in the system Li/B/Si. Yellow, transparent single crystals were synthesized from the elements in tin as solvent at 1500 degrees C in h-BN crucibles in arc-welded Ta ampoules. Li(2)B(12)Si(2) crystallizes orthorhombic in the space group Cmce (no. 64) with a=6.1060(6), b=10.9794(14), c=8.4050(8) A, and Z=4. The crystal structure is characterized by a covalent network of B(12) icosahedra connected by Si atoms and Li atoms located in interstitial spaces. The structure is closely related to that of MgB(12)Si(2) and fulfils the electron-counting rules of Wade and Longuet-Higgins. Measurements of Vickers (H(V)=20.3 GPa) and Knoop microhardness (H(K)=20.4 GPa) revealed that Li(2)B(12)Si(2) is a hard material. The band gap was determined experimentally and calculated by theoretical means. UV/Vis spectra revealed a band gap of 2.27 eV, with which the calculated value of 2.1 eV agrees well. The IR and Raman spectra show the expected oscillations of icosahedral networks. Theoretical investigations of bonding in this structure were carried out with the FP-LAPW method. The results confirm the applicability of simple electron-counting rules and enable some structural specialties to be explained in more detail.     

New family of aminophenalenyl-based neutral radical molecular conductors: synthesis, structure, and solid state properties

We report the preparation, crystallization, and solid-state characterization of the first members of a new family of spiro-bis-(1,9-diamino-substituted-phenalenyl)boron neutral radicals. The crystal structures show that the three radicals are monomeric and without close contacts in the crystal lattice. In all cases magnetic susceptibility measurements confirm the presence of free radicals with one unpaired spin per molecule. Two of the new radical compounds are among the most highly conducting neutral organic solids, with room-temperature conductivities reaching sigma(RT) = 4 x 10(-2) S/cm. The measured conductivities correlate with the closest intermolecular contacts in the solid state and with the calculated band dispersions, even though the bandwidths are much smaller than those found in other organic conductors.     

t-Si64: A Novel Silicon Allotrope

Utilizing first principle calculations, a novel Si₆₄ silicon allotrope in the I4₁/amd space group with tetragonal symmetry (denoted as t-Si₆₄ below) is proposed in this work. In addition, also its structural, anisotropic mechanical, and electronic properties along with its minimum thermal conductivity κ_min were predicted. The mechanical and thermodynamic stability of t-Si₆₄ were evaluated by means of elastic constants and phonon spectra. The electronic band structure indicates that t-Si₆₄ is an indirect band gap semiconductor with a band gap: 0.67 eV (primitive cell) compared to a direct band gap of 0.70 eV with respect to a conventional cell. The minimum thermal conductivity of t-Si₆₄ (0.74 W cm⁻¹ K⁻¹) is much smaller than that of diamond silicon (1.13 W cm⁻¹ K⁻¹). Therefore, Si−Ge alloys in the I4₁/amd space group are potential thermoelectric materials.     

Crystal structure and ionic conductivity of three polymorphic phases of rubidium trifluoromethyl sulfonate, RbSO3CF3

The crystal structures of three polymorphic phases of rubidium trifluoromethyl sulfonate (RbSO3CF3, rubidium 'triflate') were solved from X-ray powder diffraction data. At room temperature, rubidium triflate crystallizes in the monoclinic space group Cm with lattice parameters of a = 19.9611(5) A, b = 23.4913(7) A, c = 5.1514(2) A, beta = 102.758(2) degrees; Z = 16. At T = 321 K, a first-order phase transition occurs toward a monoclinic phase in space group P2(1) with lattice parameters at T = 344 K of a = 10.3434(5) A, b = 5.8283(3) A, c = 5.1982(3) A, beta = 104.278(6) degrees; Z = 2). At T = 461 K, another phase transition, this time of second order, occurs toward an orthorhombic phase in space group Cmcm with lattice parameters at T = 510 K of a = 5.3069(2) A, b = 20.2423(10) A, c = 5.9479(2) A; Z = 4. As a common feature within all three crystal structures of rubidium triflate, the triflate anions are arranged in double layers with the lipophilic CF3 groups facing each other. The rubidium ions are located between the SO3 groups. The general packing is similar to the packing in cesium triflate. Rubidium triflate can be classified as a solid electrolyte with a specific ionic conductivity of sigma = 9.89 x 10(-9) S/cm at T = 384 K and sigma = 3.84 x 10(-6) S/cm at T = 481 K.     

Isostructural bisdithiazolyl and bisthiaselenazolyl radicals: trends in bandwidth and conductivity

Reaction of N-alkylated pyridine-bridged bisdithiazolylium cations [1]+ (R1 =Me, Et; R2 =Ph) with selenium dioxide in acetic acid provides a one-step high-yield synthetic route to bisthiaselenazolylium cations [2]+ (R1 = Me, Et; R2 = Ph). The corresponding radicals 1 and 2 can be prepared by chemical or electrochemical reduction of the cations. Structural analysis of the radicals has been achieved by a combination of single-crystal and powder X-ray diffraction methods. While the two sulfur radicals 1 adopt different space groups (P3(1)21 for R1 = Me and P(-)1 for R1 = Et), the two selenium radicals 2 (space groups P3(1)21 for R1 = Me and P3(2)21 for R1 =Et) are isostructural with each other and also with 1 (R1 = Me, R2 = Ph). Variable-temperature magnetic measurements on all four compounds confirm that they are undimerized S = 1/2 systems, with varying degrees of weak intermolecular antiferromagnetic coupling. Variable-temperature electrical conductivity measurements on the two selenium radicals provide conductivities sigma(300 K) = 7.4 x 10-6 (R1 = Et) and 3.3 x 10-5 S cm-1 (R1 = Me), with activation energies, E(act), of 0.32 (R1 = Et) and 0.29 eV (R1 = Me). The differences in conductivity within the isostructural series is interpreted in terms of their relative solid-state bandwidths, as estimated from Extended Hückel band-structure calculations.