Polarized angular dependence of out-of-plane light-scattering measurements for nanoparticles on wafer

Bidirectional ellipsometry has been developed as a technique for distinguishing among various scattering features near surfaces. The polarized angular dependence of out-of-plane light-scattering by the nanoparticles on wafer is calculated and measured according to Rayleigh limit. These calculations and measurements yield angular dependence of bidirectional ellipsometric parameters for out-of-plane scattering. The experimental data show good agreement with theoretical predictions for different diameter of nanoparticles. The results suggest that improvements for accuracy are possible to perform measurements of scattering features from nanoparticles. The angular dependence and the polarization of light scattered by nanoparticles can be used to determine the size of nanoparticulate contaminants on silicon wafers.     

Temperature dependence of excitonic emission in cubic CdSe thin film

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.     

ZnS thin film prepared through a self-assembled thin film precursor route

Poly(zinc 1,6-hexanedithiolate) thin film, a precursor to prepare ZnS thin film, was self-assembled on a quartz substrate. The UV-vis spectra monitored the annealing process of the poly(zinc 1,6-hexanedithiolate) film, which revealed that the ZnS thin film began to form at approximately 515 K. The result of XRD confirmed the crystallinity of ZnS. With increase of annealing temperature, a red shift of the emission spectra was observed.     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

The microstructure investigation of GeTi thin film used for non-volatile memory

GeTi thin film has been found to have the reversible resistance switching property in our previous work. In this paper, the microstructure of this material with a given composition was investigated. The film was synthesized by magnetron sputtering and treated by the rapid temperature process. The results indicate a coexist status of amorphous and polycrystalline states in the as-deposited GeTi film, and the grains in the film are extremely fine. Furthermore, not until the film annealed at 600 °C, can the polycrystalline state be detected by X-ray diffraction. Based on the morphological analysis, the sputtered GeTi has the column growth tendency, and the column structure vanishes with the temperature increasing. The microstructure and thermal property analysis indicate that GeTi does not undergo evident phase change process during the annealing process, which makes the switching mechanism of GeTi different from that of chalcogenide memory material, the most widely used phase change memory material.     

Amorphous film thickness dependence for epitaxy of perovskite oxide films under excimer laser irradiation

We have studied the epitaxial growth of perovskite manganite LaMnO₃ (LMO) on SrTiO₃(1 0 0) in the excimer laser assisted metal organic deposition process. The LMO was preferentially grown from the substrate surface by the KrF laser irradiation. The study of amorphous LMO film thickness dependence on epitaxial growth under the excimer laser irradiation revealed that the photo-thermal heating effect strongly depended on the amorphous film thickness due to a low thermal conductivity of amorphous LMO: the ion-migration for chemical bond-forming at the reaction interface would be strongly enhanced in the amorphous LMO film with the large film thickness about 210 nm. On the other hand, the photo-chemical effect occurred efficiently for the amorphous film thickness in the range of 35-210 nm. These results indicate that the epitaxial growing rate was dominated by the photo-thermal heating after the photo-chemical activation at the growth interface.     

Structure of ultrathin oxide layers on metal surfaces from grazing scattering of fast atoms

The structure of ultrathin oxide layers grown on metal substrates is investigated by grazing scattering of fast atoms from the film surface. We present three recent experimental techniques which allow us to study the structure of ordered oxide films on metal substrates in detail. (1) A new variant of a triangulation method with fast atoms based on the detection of emitted electrons, (2) rainbow scattering under axial surface channeling conditions, and (3) fast atom diffraction (FAD) for studies on the structure of oxide films. Our examples demonstrate the attractive features of grazing fast atom scattering as a powerful analytical tool in surface physics.     

Ripple formation in the chromium thin film during laser ablation

The beam of a nanosecond pulse laser tightly focused to a line was applied for the back-side ablation of the chromium thin film on a glass substrate. The stripe ablated with a single laser pulse had sharp edges on both sides and ridges of the melted metal around it. The partially overlapping pulses formed a wide cleaned area with a complicated structure made of the metal remaining from the ridges. Regular structures, ripples, were developed when laser fluence was slightly above the single-pulse removal threshold and the shift between pulses was less than half width of the line ablated with a single laser pulse. The ripples were located periodically (∼4 μm) and were orientated perpendicularly to the long axis of the beam spot. Their orientation did not depend on the laser beam polarization. Different models of the ripple formation in the thin metal film were considered, and instability of the moving vapor-liquid-solid contact line during evaporation of thin liquid films appears to be the most probable process responsible for the observed phenomena. Formation of regular gratings with the unlimited line length was experimentally implemented by using the above-mentioned technique.     

The influence of substrate temperature variation on tungsten oxide thin film growth in an HFCVD system

Tungsten oxide (WO₃) thin films were deposited by a modified hot filament chemical vapor deposition (HFCVD) technique using Si (1 0 0) substrates. The substrate temperature was varied from room temperature to 430 °C at an interval of 100 °C. The influence of the substrate temperature on the structural and optical properties of the WO₃ films was studied. X-ray diffraction and Raman spectra show that as substrate temperature increases the film tends to crystallize from the amorphous state and the surface roughness decreases sharply after 230 °C as confirmed from AFM image analysis. Also from the X-ray analysis it is evident that the substrate orientation plays a key role in growth. There is a sharp peak for samples on Si substrate due to texturing. The film thickness also decreases as substrate temperature increases. UV-vis spectra show that as substrate temperature increases the film property changes from metallic to insulating behavior due to changing stoichiometry, which was confirmed by XPS analysis.     

In situ measurement of the surface stress evolution during magnetron sputter-deposition of Ag thin film

We measured the evolution of in situ surface stress of Ag thin film during the magnetron sputter deposition. The measurement of force per width of Ag thin film showed that both the surface state and surface stress of Ag layer can be controlled through the variation of the deposition conditions such as the deposition temperature and rate. At room temperature, the force per width curve of Ag film deposited to 1 Å/s showed a typical curve consisting of three stages of surface stress. A brief presence of initial compressive stage and broad tensile maximum resulting in a compressive state had a tendency to disappear with increasing the deposition temperature. Meanwhile, a development of final compressive stage was more at higher temperature. Similar effect was observed but less obvious on increasing the deposition rate.     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Surface characterization and microstructure of ITO thin films at different annealing temperatures

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. The influence of postgrowth thermal annealing on the microstructure and surface morphology of ITO thin films are also examined. The results demonstrate that the film annealed at higher annealing temperature (300 °C) has higher surface roughness, which is due to the aggregation of the native grains into larger clusters upon annealing. The fractal analysis reveals that the value of fractal dimension D_f falls within the range 2.16-2.20 depending upon the annealing temperatures and is calculated by the height-height correlation function.     

Light-induced ultrafast phase transitions in VO2 thin film

Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 °C. As a kind of functional material, VO₂ thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO₂ were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm². The observed PT is associated with the optical interband transition in VO₂ thin film. It suggests that with a pump laser illuminating on the film, excitation from the d_θ,? - state of valence band to the unoccupied excited mixed d_θ,?-π* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d_θ,?-π* - state of the metallic phase band.     

Damage mechanism and morphology characteristics of chromium film in femtosecond laser rear-side ablation

In this paper, damage mechanism and morphology characteristics of chromium film in femtosecond laser rear-side ablation are investigated. The film removing process includes two key sub-processes: the laser ablation dynamic process and subsequent breaking and ejecting dynamic process. Film morphology in rear-side ablation is determined by the interrelation between the laser energy and the film strength. When lower laser energy is used, residual out-layer film is relative thick and tends to break into some large fragments, which results in an irregular ablation shape. While when higher pulse energy is used, thinner residual film with weaker break strength breaks into small fragments, the ablation quality improves correspondingly. Besides laser energy and film property, energy distribution of laser beam also affects the ablation quality. In experiments, this kind of effect is researched by changing the focal position. It is found that ripples, which are familiar nano-structures in front-side ablation, also exist in rear-side ablation. These ripples are formed initially at the interface between quartz substrate and film, and their coverage varies with the energy distribution. Additionally, increasing number of scans is an effective method to shorten the period of ripples.     

The effect of solvent upon molecularly thin rotaxane film formation

We have investigated variations in molecularly thin rotaxane films deposited by solvent evaporation, using atomic force microscopy (AFM). Small changes in rotaxane structure result in significant differences in film morphology. The addition of exo-pyridyl moietes to the rotaxane macrocycle results in uniform domains having orientations corresponding to the underlying substrate lattice, while a larger, less symmetric molecule results in a greater lattice mismatch and smaller domain sizes. We have measured differences in film heights both as a function of the solvent of deposition and as a function of surface coverage of rotaxanes. Based on these observations we describe how the use of solvents with higher hydrogen-bond basicity results in films which are more likely to favour sub-molecular motion.     

Hydrogenated diamond-like carbon film deposited on UHMWPE by RF-PECVD

In this work, investigations were conducted to analyze the properties of diamond-like carbon (DLC) film deposited on ultra-high molecular weight polyethylene (UHMWPE) by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) at a low temperature of 50 °C. Composition and structure of the films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. Hardness and wettability of the film were tested. Tribological characterizations were carried out on a universal micro-tribometer, and reciprocating friction against ZrO₂ ball was adopted with 25% bovine serum as lubrication. Results show that DLC film was successfully deposited on UHMWPE surface by RF-PECVD and the sp³ content was about 20% in the film. The film increased the macrohardness of the substrate by about 42% and the wettability was improved too. Tribology test showed a higher friction coefficient but a much smaller wear volume after the deposition due to the surface roughening and strengthening.     

Ultra fast melting process in femtosecond laser crystallization of thin a-Si layer

In this paper, we investigated the mechanism of crystallization induced by femtosecond laser irradiation for an amorphous Si (a-Si) thin layer on a crystalline Si (c-Si) substrate. The fundamental, SHG, THG wavelength of a Ti:Sapphire laser was used for the crystallization process. To investigate the processed areas we performed Laser Scanning Microscopy (LSM), Transmission Electron Microscopy (TEM) and Imaging Pump-Probe measurements. Except for 267 nm femtosecond laser irradiation, the crystallization occurred well. The threshold fluences for the crystallization using 800 nm and 400 nm femtosecond laser irradiations were 100 mJ/cm² and 30 mJ/cm², respectively. TEM observation revealed that the crystallization occurred by epitaxial growth from the boundary surface between the a-Si layer and c-Si substrate. The melting depths estimated by Imaging Pump-Probe measurements became shallower when the shorter wavelength was used.     

Morphology and structure of gold-lithium niobate thin film: A laboratory source X-ray scattering study

Laboratory source X-ray scattering set-up has been used to determine the complete morphology and structure of an optically important composite thin film. Analysis of grazing incidence small angle X-ray scattering, X-ray reflectivity and powder diffraction data of Au/LiNbO₃ thin film prepared by sequential deposition of gold and lithium niobate on float glass substrate suggest that the Au-nanocrystallites are dispersed in amorphous medium, which although have average separation but do not have any long range periodicity other than growth or z-direction. The morphology of the nanocomposite thin film determined through X-ray scattering measurements agrees well with the measured optical absorption.     

XPS study of the surfactant film adsorbed onto growing titania nanoparticles

TiO₂ particles, prepared by following a sol-gel preparative route, were submitted to hydrothermal growing stages in the presence of an anionic surfactant, sodium dodecyl-sulfate (SDS), at solution pH values corresponding, respectively, to positive surface charges and to the isoelectric point of the oxide. The concentration of the surfactant in the aqueous solution was varied in order to produce different conditions of self-aggregation between the amphiphilic molecules. XPS analyses were performed on the aged and dried precursors to characterize the surfactant films adsorbed onto the oxide. The regions of Ti 2p, O 1s, and C 1s were specifically investigated. The samples, calcined at 600 °C, were characterized for phase composition-crystallinity, by X-ray diffraction, and for surface area. The role played by the oxide-surfactant interactions and by the surfactant self-aggregation phenomena in affecting the physico-chemical properties of the powders is discussed.     

The pH and current density dependence of DC electrodeposited CoCu thin films

CoCu thin films were fabricated on a nanocrystalline substrate by DC electrodeposition. It is found that the composition, structure and magnetic properties of the thin films exhibit a strong dependence on the current density and pH values of the bath electrolyte. The effect of annealing as well as the structure–property relation was investigated.