Double groove silicon grating polarizer in telecommunication wavelength band

In this paper, we propose an ultra broad band polarizer operating in the telecommunication wavelength band, this device consisting a double groove silicon grating is designed with using the inverse mathematical method and rigorous vector diffraction theory. It is shown from our calculations that the device presents extremely high reflection (R > 95%) for TE polarization light and high transmission (T > 95%) for TM polarization over ∼400 nm wavelength range, moreover, the extinction ratio is ∼30 in the central wavelength 1550 nm. Furthermore, it is found with rigorous coupled wave analysis (RCWA) that the extremely wide band property for TE polarization is due to the excitation of strong modulation guided modes in the design wavelength range.     

Broad band beam splitter based on the double-groove fused silica grating

In this paper, we propose a broad band 1 × 3 beam splitter operating in the telecommunication wavelength band under normal incidence, this device consisting of a double-groove fused silica grating layer is designed with using the inverse mathematical method and rigorous vector diffraction theory. It is shown from our calculations that the device presents excellent beam splitter ability for TE polarization light with the average diffraction efficiencies is more than 95% over ∼100 nm wavelength range, moreover, the uniformity of our beam splitter is better than 2% in the whole wavelength band. Furthermore, the physical understanding of the diffraction behaviors taking place inside the beam splitter gratings can be explained by the modal method.     

Extremely wide band Rayleigh resonant reflector with sharp angular spectra in near infrared wavelength band

In this paper, we propose an extremely broadband Rayleigh resonant reflector with sharp angular spectra operating in near infrared wavelength band, this device consisting of a single germanium resonant grating layer is designed and analyzed by using with the rigorous vector diffraction theory. At the Rayleigh angle, the first diffracted order can be appear from evanescent to a propagating one, thus, a very sharp angular spectrum characteristics can be presented in the device. Based on the guided mode resonant effect, high index material such as silicon and germanium can be designed as wide band reflector, beam splitter and polarizer in near infrared wavelength region. Through connecting Rayleigh phenomena and guided mode resonant effect, we can design a new kind of optical devices with versatile characteristics such as sharp angular spectra and extremely wide reflection band. In this paper, we present a Rayleigh resonant reflector with extremely high reflection (R > 99.5%) for TE polarization light over ∼600 nm wavelength range and sharp angular spectral distribution. In addition, it is shown from our calculations that the high-index nano-layer located adjacent to the substrate is seen to critically affect the resulting spectra of Rayleigh resonant reflector.     

Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide

We have prepared SrTiO₃/BaTiO₃ thin films with multilayered structures deposited on indium tin oxide (ITO) coated glass by a sol-gel deposition and heating at 300-650 °C. The optical properties were obtained by UV-vis spectroscopy. The films show a high transmittance (approximately 85%) in the visible region. The optical band gap of the films is tunable in the 3.64-4.19 eV range by varying the annealing temperature. An abrupt decrease towards the bulk band gap value is observed at annealing temperatures above 600 °C. The multilayered film annealed at 650 ° C exhibited the maximum refractive index of 2.09-1.91 in the 450-750 nm wavelength range. The XRD and AFM results indicate that the films annealed above 600 ° C are substantially more crystalline than the films prepared at lower temperatures which were used to change their optical band gap and complex refractive index to an extent that depended on the annealing temperature.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

A novel terahertz wave reflective polarizer for THz communication

We design terahertz wave reflective polarizer that operates over a wide terahertz wavelength range and is based on a periodic bilayer structure. The structure is characterized by transfer matrix calculations. Results of simulations show that the mirror is highly reflecting for incidence angle θ ≤ 60°and TE as well as TM polarization in the wavelength range between 541.6 μm and 574.2 μm (i.e. frequency band between 522.5GHZ and 533.9 GHZ). As the incidence angle increases this reflection band blueshifts for both TM and TE polarizations.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

The influence of growth parameters on the optical properties and morphology of UHV deposited Ni thin films

Nickel films of different thickness ranging from 15 nm to 350 nm were deposited on glass substrates, at different substrate temperatures (313-600 K) under UHV condition. The nano-structure of the films was obtained, using X-ray diffraction (XRD) and atomic force microscopy (AFM). The nano-strain in these films was obtained using the Warren-Averbach method. Their optical properties were measured by spectrophotometry in the spectral range of 190-2500 nm. Kramers-Kronig method was used for the analysis of the reflectivity curves. The absorption peaks of Ni thin films at ∼1.4 eV (transition between the bands near W and K symmetry points) and ∼5.0 eV (transition from L_2^′ to L₁ upper) are observed, with an additional bump at about 2 eV. The over-layer thickness was calculated to be less than 3.0 nm, using the Transfer Matrix method. The changes in optical data are related to different phenomena, such as different crystallographic orientations of the grains in these polycrystalline films (film texture), nano-strain, and film surface roughness.     

Optical measurements of silicon wafer temperature

An optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio R_p/R_s is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm.     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

Synthesis and characterization of Ni-doped ZnO: A transparent magnetic semiconductor

We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (H_c) values 192, 310 and 100 Oe and saturation magnetization (M_s) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10⁻³ Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10⁻¹ Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.     

Characteristics of filtered vacuum arc deposited ZnO-SnO2 thin films on room temperature substrates

ZnO, SnO₂ and zinc stannate thin films were deposited using filtered vacuum arc deposition (FVAD) system on commercial microscope glass and UV fused silica substrates (UVFS) at room temperature (RT). The structural and morphological analyses were performed using X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively. XRD patterns of ZnO films deposited at RT had strongly c-axis orientation, whereas SnO₂ and zinc stannate films had amorphous structure as they did not have any defined patterns. Average crystalline size and surface grain size of ZnO films were ∼16 nm, as determined from diffraction line broadening and AFM images, respectively. Optical constants in the 250-1100 nm wavelength range were determined by variable angle spectroscopic ellipsometry and transmission measurements. The transmission of the deposited films in the VIS was 80-90%, affected by interference. The refractive indices and the extinction coefficients of deposited ZnO, SnO₂ and zinc stannate films were in the range 1.87-2.15 and 0.02-0.04, depending on wavelengths and deposition parameters. The optical band gap (E_g) was determined by the dependence of the absorption coefficient on the photon energy at short wavelengths. Its values for ZnO, SnO₂ and zinc stannate were in the range 3.25-3.30 eV, 3.60-3.98 eV and 3.43-3.52 eV, respectively, depending on the deposition pressure.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.     

Dielectric and optical behaviors in relaxor ferroelectric Pb(In1/2Nb1/2)1−xTixO3 crystal

Dielectric permittivities (ε′,ε″) have been measured as functions of temperature (140-535 K) and frequency (500 Hz-2.0 MHz) in a (001)-cut Pb(In_1/2Nb_1/2)_0.7Ti_0.3O₃ (PINT30%) single crystal grown by the modified Bridgman method with Pb(Mg_1/3Nb_2/3)_0.71Ti_0.29O₃ (PMNT29%) seed crystal. A diffused phase transition was observed in the temperature region of ∼430-460 K with strong frequency dispersion. Above the Burns temperature T_B≅510 K, the dielectric permittivity was found to follow the Curie-Weiss behavior, ε′=C/(T−T_C), with parameters C=3.9×10⁵ and T_C=472 K. Below T_B≅510 K, polar nanoclusters are considered to appear and are responsible for the diffused dielectric anomaly. Optical transmission, refractive indices, and the Cauchy equations were obtained as a function of wavelength at room temperature. The unpoled crystal shows almost no birefringence, indicating that the average structural symmetry is optically isotropic. The crystal exhibits a broad transparency in the wavelength range of ∼0.4-6.0 μm.     

Dependence of film thickness on the structural and optical properties of ZnO thin films

ZnO thin films are prepared on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) at room temperature. Optical parameters such as optical transmittance, reflectance, band tail, dielectric coefficient, refractive index, energy band gap have been studied, discussed and correlated to the changes with film thickness. Kramers-Kronig and dispersion relations were employed to determine the complex refractive index and dielectric constants using reflection data in the ultraviolet-visible-near infrared regions. Films with optical transmittance above 90% in the visible range were prepared at pressure of 6.5 × 10⁻⁴ Torr. XRD analysis revealed that all films had a strong ZnO (0 0 2) peak, indicating c-axis orientation. The crystal grain size increased from 14.97 nm to 22.53 nm as the film thickness increased from 139 nm to 427 nm, however no significant change was observed in interplanar distance and crystal lattice constant. Optical energy gap decreased from 3.21 eV to 3.19 eV with increasing the thickness. The transmission in UV region decreased with the increase of film thickness. The refractive index, Urbach tail and real part of complex dielectric constant decreased as the film thickness increased. Oscillator energy of as-deposited films increased from 3.49 eV to 4.78 eV as the thickness increased.     

Substrate temperature influence on the properties of nanostructured ZnO transparent ultrathin films grown by PLD

Zinc oxide films of 40 nm thickness have been deposited on glass substrates by pulsed laser deposition using an excimer XeCl laser (308 nm) at different substrate temperatures ranging from room temperature to 650 °C. Surface investigations carried out by using atomic force microscopy have shown a strong influence of temperature on the films surface topography. UV-VIS transmittance measurements have shown that our ZnO films are highly transparent in the visible wavelength region, having an average transmittance of ∼90%. The optical band gap of the films was found to be 3.26 eV, which is lower than the theoretical value of 3.37 eV. Besides the normal absorption edge related to the transition between the valence and the conduction band, an additional absorption band was also recorded in the wavelength region around 364 nm (∼3.4 eV). This additional absorption band may be due to excitonic, impurity, and/or quantum size effects. Photoreduction/oxidation in ozone of the ZnO films lead to larger conductivity changes for higher deposition temperature. In conclusion, the ozone sensing characteristics as well as the optical properties of the ZnO thin films deposited by pulsed laser deposition are strongly influenced by the substrate temperature during growth. The sensitivity of the films towards ozone might be enhanced significantly by the control of the films deposition parameters and surface characteristics.     

Investigation of energy band gap and optical properties of cubic CdS epilayers

High quality cubic CdS epilayers were grown on GaAs (1 0 0) substrates by the hot-wall epitaxy method. The crystal structure of the grown epilayers was confirmed to be the cubic structure by X-ray diffraction patterns. The optical properties of the epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) and were studied in the transmittance spectra at a wavelength range of 400-700 nm at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, 〈?(E)〉 = 〈?₁(E)〉 + i〈?₂(E)〉, such as E₀, E₁, E₂, E^′₀, and E^′₁ structures. In addition, the optical properties related to the pseudodielectric function of CdS, such as the absorption coefficient α(E), were investigated. All the critical point structures were observed, for the first time, at 300 K by ellipsometric measurements for the cubic CdS epilayers. Also, the energy band gap was determined by the transmittance spectra of the free-standing film, and the results were compared with the E₀ structure obtained by SE measurement.     

Ellipsometric study of a-Be3N2 thin films prepared by radio frequency magnetron sputtering

The ellipsometric characterizations of amorphous beryllium nitride (a-Be₃N₂) thin films deposited on Si (1 0 0) and quartz at temperature <50 °C using reactive RF sputtering deposition were examined in the wavelength range 280-1600 nm. X-ray diffraction of the films showed no structure, suggesting the Be₃N₂ films grown on the substrates are amorphous. The composition and chemical structures of the amorphous thin films were determined by using electron spectroscopy for chemical analysis. The surface morphology of a-Be₃N₂ was characterized by atomic force microscopy. The thicknesses and optical constants of the films were derived from spectroscopic ellipsometry measurements. The variation of the optical constants with thickness of the deposited films has been investigated. From the angle dependence of the polarized reflectivity we deduced a Brewster angle of 64°. At any angle of incidence, the a-Be₃N₂ shown high transmissivity (80-99%) and low reflectivity (<18%) in the visible and near infrared regions. Hence, the a-Be₃N₂ could be a good candidate for antireflection optical coatings under conditions of optimized the type of polarization and the angle of incidence.     

Influence of crystallization on the spectral features of nano-sized ferroelectric barium strontium titanate (Ba0.7Sr0.3Tio3) thin films

Ferroelectric barium strontium titanate (Ba_0.7Sr_0.3TiO₃)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂]_, strontium 2-ethylhexanoate [Sr[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂] and titanium(IV) isopropoxide [TiOCH(CH₃)₂]₄ precursors using a modified sol-gel technique. The precursor except [TiOCH(CH₃)₂]₄ were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550 °C for 1 h in air. The lattice constants “a” and “c” were found to be 3.974 A and 3.990 A, respectively. The grain sizes of the films annealed at 450, 500 and 550 °C were found to be 30.8, 36.0 and 39.8 nm respectively. The amorphous film showed very high transparency (∼95%), which decreases slightly after crystallization (∼90%). The band gap and refractive index of the amorphous and crystalline films were estimated. The optical dispersion data are also analyzed in the light of the single oscillator model and are discussed.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.