Enhanced electroluminescence of Eu by Tb in complexes Tb1−xEux(TTA)3Dipy

A series of rare earth ternary compounds of Tb_1−xEu_x(TTA)₃Dipy (HTTA=thenoyltrifluoroacetone, Dipy=2,2′-dipyridyl) have been synthesized, and the characteristics of the compounds have been performed by DTA-TG, IR, UV and fluorescence spectroscopy. Photoluminescence measurements indicated that the complexes of Eu(III) emit strong red luminescence under UV radiation. IR spectra suggest that complexes have been successfully synthesized, and TG curves indicate that the complexes are stable up to a temperature of about 220 °C. The Eu complex was blended with poly(N-vinylcarbazole) (PVK) and spin coated into films, and electroluminescence devices with the structure of Indium Tin Oxide (ITO)/PVK:Tb_1−xEu_x(TTA)₃Dipy/BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline)/aluminum quinoline (AlQ)/Al were fabricated, the luminescence of Eu³⁺ complexes enhances after doping with Tb³⁺. Therefore, it may be an effective method to improve the EL intensity of the lanthanide complex.     

Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers

Strong blue and violet photo (PL) and electroluminescence (EL) at room temperature was obtained from SiO₂-films grown on crystalline Si, which were either single (SI) or double implanted (DI) with Ge ions and annealed at different temperatures. The PL spectra of Ge-rich layers reach a maximum after annealing at 500–700°C for DI layers or 900–1000°C for SI layers, respectively. Both, PL and EL of 500 nm thick Ge-rich layers are easily visible by the naked eye at ambient light due to their high intensity. Based on excitation spectra we tentatively interpret the blue PL as due to the oxygen vacancy in silicon dioxide.

The EL spectrum of the Ge-implanted oxide correlates very well with the PL one and shows a linear dependence on the injected current over three orders of magnitude. For DI layers much higher injection currents than for SI layers can be achieved. An EL efficiency in the order of 10⁻⁴ for Ge⁺-implanted silicon dioxide was determined.     

Incorporation of the Eu(tta)3(H2O)2 complex into a co-condensed d-U(600)/d-U(900) matrix

The thermal behavior, structure and photoluminescence features of an innovative organic/inorganic hybrid matrix built from the co-condensation of two di-ureasils frameworks (d-U(900) and d-U(600)), one of which incorporates poly(oxyethylene) (POE) chains with about 15.5 repeat units and the other about 8.5 oxyethylene repeat units are reported. The co-condensed di-ureasil network has been doped with the Eu(tta)₃(H₂O)₂ (where tta⁻ is 2-thenoyltrifluoracetonate) complex. The effective interaction between the lanthanide ions and the host hybrid structure accounts for the increase of the emission overall quantum yield (36%) and for the ⁵D₀ quantum efficiency (57%) with respect to those of the complex alone (29% and 27%, respectively).     

Optical properties of (ZnO)0.5(P2O5)0.5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Binary (ZnO)_0.5(P₂O₅)_0.5 glasses doped with Eu₂O₃ and nanoparticles of Gd₂O₃:Eu were prepared by conventional melt-quench method and their luminescence properties were compared. Undoped (ZnO)_0.5(P₂O₅)_0.5 glass is characterized by a luminescent defect centre (similar to L-centre present in Na₂O-SiO₂ glasses) with emission around 324 nm and having an excited state lifetime of 18 ns. Such defect centres can transfer the energy to Eu³⁺ ions leading to improved Eu³⁺ luminescence from such glasses. Based on the decay curves corresponding to the ⁵D₀ level of Eu³⁺ ions in both Gd₂O₃:Eu nanoparticles incorporated as well as Eu₂O₃ incorporated glasses, a significant clustering of Eu³⁺ ions taking place with the latter sample is confirmed. From the lifetime studies of the excited state of L-centre emission from (ZnO)_0.5(P₂O₅)_0.5 glass doped with Gd₂O₃:Eu nanoparticles, it is established that there exists weak energy transfer from L-centres to Eu³⁺ ions. Poor energy transfer from the defect centres to Eu³⁺ ions in Gd₂O₃:Eu nanoparticles doped (ZnO)_0.5(P₂O₅)_0.5 glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between luminescent centre and Eu³⁺ ions.     

Luminescent properties of a novel red-emitting phosphor: Eu-activated Ca3Sr3(VO4)4

A new luminescent material, Eu³⁺ activated Ca₃Sr₃(VO₄)₄, was investigated. This compound shows a strong red emission centered at 618 nm under near-UV light with two distinct absorption bands; charge transfer state of VO₄³⁻ and f-f transitions of europium ions. As the europium concentration is increased, an additional red-emitting phosphor, EuVO₄, which is known to be a prominent luminescent material in the near-UV region can be traced. The UV excited luminescent properties of this material may find application in the production of red phosphors for white light-emitting diodes.     

Glassy-ferromagnetic behavior in Eu0.5Sr0.5CoO3

Polycrystalline perovskite cobalt oxide Eu_0.5Sr_0.5CoO₃ was prepared by the conventional solid-state reaction method. X-ray powder patterns indicated the prepared samples are pure, cubic perovskite structure (Pm3?m), and with no evidence of any secondary phases. The dc magnetization and ac susceptibility measurements were carried out to investigate the magnetic properties of the sample, and which indicated that cluster-glasses properties are suppressed with the increasing of the coercive field. We denied the possibility of spin-glasses and the existence of the Hopkinson effect in Eu_0.5Sr_0.5CoO₃ through the temperature-dependent ac susceptibility measurements, and explained the magnetic behavior of Eu_0.5Sr_0.5CoO₃ with the competition between magnetic anisotropy and the external magnetic field.     

Growth and spectroscopic properties of Yb-doped Li6Y(BO3)3 single crystal

The spectroscopic properties of high-quality Czochralski grown 20% Yb³⁺-doped Li₆Y(BO₃)₃ single crystal as new promising laser material are presented. The crystal was seeded-grown in the 〈0 1 0〉 direction and its crystallinity was measured using X-ray rocking curve analysis. Low temperature transmission spectrum exhibits broad bands in a short range of wavelengths and two sharp lines at 972.5 and 978 nm, interpreted as two zero-lines of two nonequivalent Yb³⁺ centers inside the lattice. The fluorescence lifetimes associated to these two intense lines are different: 0.867 and 1.33 ms. An attempt of determination of the Stark sublevels energies of the ⁴F_5/2 and ⁴F_7/2 manifolds of the two Yb³⁺ nonequivalent ions is given. The polarized absorption and emission spectra were also recorded at room temperature and we conclude that the most favorable emission line for laser application could be around 1042 nm in n_g polarization.     

Tunable photoluminescence and electroluminescence of size-controlled silicon nanocrystals in nanocrystalline-Si/SiO2 superlattices

We present photoluminescence and electroluminescence of silicon nanocrystals deposited by plasma-enhanced chemical vapor deposition (PECVD) using nanocrystalline silicon/silicon dioxide (nc-Si/SiO₂) superlattice approach. This approach allows us to tune the nanocrystal emission wavelength by varying the thickness of the Si layers. We fabricate light emitting devices (LEDs) with transparent indium tin oxide (ITO) contacts using these superlattice materials. The current-voltage characteristics of the LEDs are measured and compared to Frenkel-Poole and Fowler-Nordheim models for conduction. The EL properties of the superlattice material are studied, and tuning, similar to that of the PL spectra, is shown for the EL spectra. Finally, we observe the output power and calculate the quantum efficiency and power conversion efficiency for each of the devices.     

The polarized reflectance spectrum of a novel organic conductor (BEDT-TTF)2ClO4(C2H3Cl3)0.5

The polarized reflectance spectrum of a novel organic conductor, (BEDT-TTF)₂ClO₄(C₂H₃Cl₃)_0.5 was measured at room temperature over the spectral region from 340 cm^-1 to 25000 cm^-1. The reflectance spectrum provided an evidence for the anisotropic two-dimensional character of this material. The optical conductivity spectrum exhibits the existence of an optical band gap of about 0.2 eV, suggesting that this material is a semimetal rather than a metal.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Electronic structure calculations and optical properties of a new organic-inorganic luminescent perovskite: (C9H19NH3)2PbI2Br2

(C₉H₁₉NH₃)₂PbI₂Br₂ compound is a new crystal belonging to the large hybrid organic-inorganic perovskites compounds family. Optical properties are investigated by optical absorption UV-visible and photoluminescence (PL) techniques. Bands to band absorption peak at 2.44 eV as well as an extremely strong yellow-green photoluminescence emission at 2.17 eV is observed at room temperature. First principle calculations based on the DFT and FLAPW methods combined with LDA approximation are performed as well. Density of state close to the gap is presented and discussed in terms of optical absorption and photoluminescence experimental results. The perfect agreement between experimental data and electronic structure calculations is highlighted.     

Exchange bias effect in multiferroic Eu0.75Y0.25MnO3

The exchange bias phenomenon has been investigated in multiferroic Eu_0.75Y_0.25MnO₃. The material shows a weak ferromagnetism with cone spin configuration induced by external magnetic field below 30 K. Consequently, the electric polarization coming from the cycloid spin order below 30 K can be suppressed by external magnetic fields. The magnetic hysteresis loops after cooling in a magnetic field exhibit characteristics of exchange bias below the spin glassy freezing temperature (T_g)∼16 K. The exchange bias field, coercivity field, and remanent magnetization increase with increasing cooling magnetic field. The exchange bias effect is ascribed to the frozen uncompensated spins at the antiferromagnetism/weak ferromagnetism interfaces in the spin-glass like phase.     

Two peaks observed in the electroluminescence spectra of Alq3-based OLEDs

Tris(8-hydroxyquinolato) aluminum (Alq₃)-based organic light-emitting diodes were fabricated with or without using a hole transport layer (HTL). As a conventional device, the ITO/Alq₃/Mg-Ag device yielded a green-light emission with a single peak at 525 nm in the electroluminescence (EL) spectrum. In contrast, two sub-peaks were observed in the EL spectrum of some ITO/HTL/Alq₃/Mg-Ag devices. This difference was tentatively explained by comparing EL with the photoluminescence (PL) spectrum reported in the literature.     

In situ pressure-induced solid-state amorphization in Sm2(MoO4)3, Eu2(MoO4)3 and Gd2(MoO4)3 crystals: chemical decomposition scenario

The effect of pressure on the phase transformations in Sm₂(MoO₄)₃, Gd₂(MoO₄)₃ and Eu₂(MoO₄)₃ crystals has been studied in situ using synchrotron radiation. All three isostructural compounds undergo a structural phase transition at 2.2-2.8 GPa to a new phase, which is interpreted as a possible precursor of amorphization. Amorphization in these crystals occurs irreversibly over a wide pressure range, and its mechanism, interpreted as a chemical decomposition, is found to be weakly affected by the degree of hydrostaticity.     

Photophysical analysis of the organic complex [Eu(C12H8N2)2](NO3)3

We have determined the photophysical properties of [Eu(C₁₂H₈N₂)₂](NO₃)₃, (EuPhen), a complex which is very promising for photonic and optoelectronic applications, because of its easy synthetic procedure and high thermal stability (up to 300 °C) combined with large sensitization efficiency and good emission quantum yield. Available experimental absorption and emission data have been analyzed by using Judd-Ofelt analysis. Moreover, semi-empirical calculations have been used to determine the structure of the complex and to interpret the convoluted shape of the absorption spectrum.     

Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate

The structure, orientation, and the response of electroresistance to magnetic field H and varying temperature T have been studied for 30-nm-thick La_0.67Ba_0.33MnO₃ (LBMO) films. The deviation of the [001] direction in manganite layers from the normal to the plane of the (LaAlO₃)_0.29 + (SrAl_0.5Ta_0.5O₃)_0.71 substrate strictly corresponds to the vicinal angle of the latter. The minimum yield determined from 227-keV proton scattering spectra is 0.025, signifying a high order of the cationic sublattice in the films. The biaxial compression of stable nuclei of the manganite phase affects their stoichiometry, thus contributing to the depletion of LBMO films in the alkaline-earth element. The maximum electroresistance values have been observed in the films grown at T _max ≈ 320 K, a temperature about 20 K lower than the Curie temperature of the corresponding bulk single crystals, and the maximum magnetoresistance (MR ≈ −0.42, μ₀ H = 2 T) occurs at T ≈ 300 K. At low temperatures (T < T _max/3) and μ₀ H < 0.45 T, the electroresistance response of LBMO films to a magnetic field materially depends on the anisotropic magnetoresistance and the intensity of hole scattering from domain walls; when μ₀ H > 0.5 T, the major current-carrier relaxation mechanism is the interaction with magnons.     

Dy3+ emission in M5(PO4)3F (M = Ca, Ba) phosphor

Ultrafine M₅(PO₄)₃F:Dy³⁺ (M = Ca, Ba) phosphors were prepared via combustion process using metal nitrates as precursors. The formation of crystalline phosphate was confirmed by X-ray diffraction pattern. The PL excitation spectra show the excitation peaks observed at 250 to 400 nm due to f → f transition of Dy³⁺ ion, which are useful for solid-state lighting purpose (mercury free excitation). The PL emission of Dy³⁺ ion by 348 nm excitation gave an emission at 489 nm (blue), 582 nm (yellow) and 675 nm (red). All the characteristics of BYR emissions like BGR indicate that Dy doped Ca₅(PO₄)₃F and Ba₅(PO₄)₃F phosphors are good candidates that can be applied in solid-state lighting phosphor (mercury free excited lamp phosphor) and white light LED.      

Synthesis, vibrational and optical properties of a new three-layered organic-inorganic perovskite (C4H9NH3)4Pb3I4Br6

An organic-inorganic hybrid perovskite (C₄H₉NH₃)₄Pb₃I₄Br₆ was synthesized and studied by X-ray diffraction, Raman and infrared spectroscopies, optical transmission and photoluminescence. The title compound, abbreviated (C₄)₄Pb₃I₄Br₆, crystallises in a periodic two-dimensional multilayer structure with P2₁/a space group. The structure is built up from alternating inorganic and organic layers. Each inorganic layer consists of three sheets of PbX₆ (X=I, Br) octahedra. Raman and infrared spectra of the title compound were recorded in the 100-3500 and 400-4000 cm⁻¹ frequency ranges, respectively. An assignment of the observed vibration modes is reported. Optical transmission measurements, performed on thin films of (C₄)₄Pb₃I₄Br₆, revealed two absorption bands at 474 and 508 nm. Photoluminescence measurements have shown a green emission peak at 519 nm.     

Large piezoresponse of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 thin film

0.85Bi_0.5Na_0.5TiO₃-0.15Bi_0.5K_0.5TiO₃ (BNKT15) lead-free thin films were prepared on Pt(111)/TiO₂/SiO₂/Si(100) substrates by the chemical solution deposition method. BNKT15 are MPB composition in the Bi_0.5Na_0.5TiO₃-Bi_0.5K_0.5TiO₃ (BNT-BKT) system. The maximum piezoelectric coefficient (d_33,f) value of BNKT15 thin film is approximately 75 pm/V, which is comparable to that of polycrystalline PZT thin films. These results suggest that BNKT15 thin film can be used as an alternative for PZT films in piezoelectric micro-electromechanical systems.     

拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻

本文报道了拓扑绝缘体(Bi_0.5Sb_0.5)₂Te₃薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.