Simulation of fiber to the home triple play services at 2 Gbit/s using GE-PON architecture for 56 ONUs

This paper evaluates and compares FTTH (Fiber To The Home) GEPON (Gigabit Ethernet Passive Optical Network) link design for 56 subscribers at 20 km reach at 2 Gbps bit rate. A 1:56 splitter is used as a PON (Passive Optical Network) element which creates communication between a Central Office to different users and. A boosting amplifier is employed before fiber length which tends to decrease BER and allows more users to accommodate. This architecture is investigated for different values of data rate from a CO (Central Office) to the PON in terms of BER (Bit Error Rate). The simulation work reports BER of 4.5246e−009 at 2 Gbit/s systems for the case of 56 users and if we further increase data rate of system say 5 Gbps, then we observe a sharp increase in BER. Similarly in the variation of BER with respect to transmission distance, we observe that BER shows an increase in its value as transmission distance increases.     

Low cost solution to high capacity 32 × 32 channel FTTH duplex link employing triple play services

In this paper, low cost solution based on RSOAs is proposed for a high capacity 32 × 32 channel, 20 km, FTTH duplex link employing triple play services. Here, downstream transmitters generate a 2.5-Gbps NRZ signal which is routed to both receivers and RSOA-based upstream transmitters. The RSOA modulates this signal with a 1.25-Gbps NRZ signal that effectively overwrites the downstream signal and then it is transmitted back over the same 20 km of bidirectional fiber, where it is routed to receivers at the CO. The proposed model completely eliminates the requirement of separate lasers for upstream communication which makes the system very cost effective. The high-pass filtering effect of the RSOA becomes predominant at higher input powers which has been used as an advantage here to effectively suppress the downstream signal. The impact of RSOA input power and extinction ratio of the downstream signal have been investigated and reported.     

Monolithic fused 1 × 4 couplers with high uniformity

A new method for the fabrication of high uniformity monolithic 1 × 4 singlemode fused coupler is described together with details of its performance in terms of coupling ratio, spectral response and uniformity. The fabricated device exhibits ultra-broadband performance with a port-to-port uniformity of 0.4 dB. The reliability of such couplers is also evaluated and found to have good stability. Moreover, by controlling the process parameters it is possible to control the power remaining in the through put port of the device, which can be used for dedicated non-intrusive network health monitoring.     

An 8 × 10 Gbps parallel single-chip light-to-logic converter

An 8 × 10 Gbps direct light-to-logic converter for hybrid mounted Ge photodiodes is presented. The receiver is realized in standard 0.35 μm SiGe BiCMOS technology and the Ge photodetector is directly mounted on the top of the CMOS wafer. Each of the 8 channels includes a transimpedance amplifier, limiting amplifier stages and a 50 Ω CML output driver. The overall transimpedance is 275 kΩ and at a data rate of 10 Gpbs a sensitivity of − 23.1 dBm (BER = 10⁻⁹) is reached.     

100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module

100 Gb/s on-off keying (OOK) transmission over 212 km installed standard single-mode fibers using an Indium Phosphide (InP)-based electrical clock-data-recovery (CDR) and demultiplexer module was demonstrated. 5.5 × 10^− 11 bit error rate (BER) performance was achieved and 1.1-dB optical signal-to-noise ratio (OSNR) penalty was required at 10^− 9 BER after transmission.     

160 Gbps S-band WDM transmission system over 1400 km using ITUT-652a and ITUT-655 fibers with low dispersion accumulation

Dispersion accumulation with the distance effects optical WDM system's performance severely. For every modulation format used there is a limit on maximum transmission distance due to dispersion accumulation. So dispersion compensation is required. But dispersion compensation can be avoided to a large extent by alternatively using different fiber standards. In this paper it has been proposed that the dispersion accumulation can be reduced to a large extent by alternatively transmitting in S-band and using fiber standards ITUT-652a and ITUT-655. To validate the claim, performance of a 16 channel 10 Gbps WDM system with the proposed method has been analyzed in terms of BER and Q-factor. And it has been observed that with the proposed scheme without any dispersion compensation the system performs well up to 1400 km.     

Simulation of Fiber to the Home at 10 Gbit/s using GE-PON architecture

In this paper, a fiber communication system is employed using Giga Ethernet Passive Optical Network (GE-PON) architecture. In this architecture an optical fiber is employed directly from a Central Office to the home. A 1:8 splitter is used as a PON element which establishes communication between a Central Office to different users. The architecture has been investigated for different lengths from a Central Office to the PON in terms of BER. For 10 Gbit/s system the plots between the BER and transmission distance are plotted and it are seen that as the distance increases beyond the 15 km the BER is increased very sharply. The results in the form of voice and data spectrum for different users of FTTH with GE-PON architecture are shown.     

Operation of low driving voltage cascaded modulator over non-cascaded modulator for 4 dB extinction ratio at 100 giga bit per second (Gbps)

This paper describes improved results when comparing cascaded traveling wave electro absorption modulator (TWEAM) to non-cascaded TWEAM by simulation. Large signal modeling is used for both types of modulators to achieve 4 and 10 dB extinction ratios (ERs) with flat frequency response for applications in short distance as well as long distance optical fiber communication. To obtain 4 and 10 dB ERs with 110 GHz 3 dB bandwidth, a cascaded TWEAM requires 0.4 V peak to peak (V_P-P) and 1 V_P-P input driving voltages respectively. A non-cascaded TWEAM requires about two times the input driving voltage compared to the cascaded modulator to achieve the same values of ER and 3 dB bandwidth. Both modulators have been simulated with the same bias and also use the same circuit parameters except for the total active segment lengths (1 and 0.5 mm for cascaded and non-cascaded modulator respectively) and microstrip lengths to obtain the same ERs and 3 dB bandwidths.     

Gain characteristics of a 210 km hybrid Raman/erbium-doped fiber amplified loop

As an alternative to using gain flattening filters or other optical devices that add attenuation to balance the gain in the optical spectrum, we have studied the effects of combining gain from Raman amplifiers and erbium-doped fiber amplifiers (EDFAs) in a fiber recirculating loop. We have shown a parameter range for which the gain profile is flat, and have analyzed the variation of the gain tilt as a function of the individual contributions of the Raman and EDFA amplifiers.     

Transmission system over 3000 km with dispersion compensated by chirped fiber Bragg gratings

The limitation of the system with dispersion compensation by chirped fiber Bragg gratings is investigated in this paper. The transmission distance of the system based on chirped fiber Bragg gratings surpasses 3000 km. The bit error rate (BER) of the system is below 10⁻⁹ for as long as 2000 km. The BER is about 10⁻⁷ at 3000 km and, when forward error correction (FEC) is added, zero BER can be achieved. It is the longest transmission system with dispersion compensation by chirped fiber Bragg gratings.     

Demonstration of PMD compensation by using a DSP-Based OPMDC prototype in a 43-Gb/s RZ-DQPSK, 1200 km DWDM transmission

This paper reports the DSP-based prototype compensator we have made to compensate the polarization mode dispersion (PMD) in fibers. It was tested in one channel of a 40 × 43-Gb/s DWDM DQPSK system, which is the commercial product line, either in the back-to-back case by using a PMD emulator, or in a 1200-km transmission testbed. The prototype showed a good performance under the tests of fast SOP and PSP rotation, DGD jump variation, and moderate knock on the testbed in a period as long as 12 h.     

STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

150 km long distributed temperature sensor using phase modulated probe wave and optimization technique

This paper describes and demonstrates the performance enhancement of a 150 km distributed sensing system based on Brillouin optical time-domain analysis (BOTDA). We present a BOTDA system combining the phase modulation and global evolutionary computing based optimization technique (Differential Evolution algorithm (DE)) for receiver optimization. We achieved an SNR improvement of 3.3 dBm compared to amplitude modulated probe wave for 150 km sensing range. We successfully demonstrate the presence of hot spot at a distance of 51 km of the sensing fibre for different temperatures.     

Waveform shaping of 1550 nm transmission through hollow quartz fiber

In this paper, we connected two single-mode fiber ends with a micron hollow quartz fiber. The hollow fiber was used to modulate the waveform of a 1550 nm light signal, resulting in a lower noise and a narrower linewidth. Specifically, the noise range and the linewidth decreased from 14% to 3% and 0.28–0.23 nm, respectively. The light field distribution and far-field intensity distribution of the hollow fiber are studied using finite difference time domain simulation. Furthermore, we discussed the research suggestions of this configuration in detail. Collectively, these results suggest that it can be used in the fields of optical signal processing, fiber laser and optical sensor.     

Investigations on PMD-induced penalties in 40 Gbps optical transmission link

Polarization-mode dispersion (PMD) in optical fibers and components can be a limiting impairment in high-speed, long-haul transmission link. In this paper, we have carried out investigations on PMD-induced penalties in a 40 Gbps optical transmission link and we obtained results for DGD, BER, Q² (dB) for different values of the PMD coefficient and different random seeds using computer simulation.     

400 Gbps WDM transmission over short range with discrete multi-tone

We simulate 400 Gbps WDM transmission system with DMT modulation. The system reaches 5 km SSMF with 100 Gbps per wavelength when the BER is 1e−3. From our analyses, we can see that DMT can be a promising solution for high capacity optical transmission system over short distance.     

A bidirectional 60 GHz RoF system based on FWM in a semiconductor optical amplifier

In this study, a bidirectional 60 GHz RoF systems based on four-wave mixing (FWM) in semiconductor optical amplifier (SOA) is proposed. Two key techniques are included in such a scheme, namely, generation of 60 GHz modulating signals and distribution of 60 GHz local oscillator. The analytical model is theoretically analyzed and then confirmed by numerical simulations. Results of this study demonstrate that such a scheme can offer realistic solutions to support future mobile broad-band applications.     

Effect of different Ge predeposition amounts on SiC grown on Si (1 1 1)

The SiC films were grown by solid source molecular beam epitaxy (SSMBE) on Si (1 1 1) with different amounts of Ge predeposited on Si prior to the epitaxial growth of SiC. The samples were investigated with reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction (XRD). The results indicate that there is an optimized Ge predeposition amount of 0.2 nm. The optimized Ge predeposition suppress the Si outdiffusion and reduce the formation of voids. For the sample without Ge predeposition, the Si outdiffusion can be observed in RHEED and the results of XRD show the worse quality of SiC film. For the sample with excess amount of Ge predeposition, the excess Ge can increase the roughness of the surface which induces the poor quality of the SiC film.     

170 Mb/s multilevel transmission over 115 m standard step-index plastic optical fiber using an integrated optical receiver

An optical receiver having a high linearity is used for multilevel communication over standard step plastic optical fiber. A large-diameter photodiode with an antireflection coating optimized for red light was integrated. These features enable the used optical receiver to be a promising plastic optical fiber receiver. An error free (< 10⁻⁸) 170 Mb/s data rate over 115 m standard PMMA step-index plastic optical fiber is achieved with four-level and eight-level pulse amplitude modulation.     

Photoluminescence and secondary ion mass spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments

GaAs (1 0 0) substrates prepared in a quartz chamber under a H₂/As₄ flux, and then exposed to air were used for the subsequent growth of GaAs-AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomically flat surfaces corroborated by atomic force microscopy analysis. Quantum wells grown directly on these substrates without a GaAs buffer layer exhibited narrow and intense photoluminescence peaks, an indication of a high quality material. The secondary ion mass spectroscopy analysis showed oxygen and carbon traces on the first AlGaAs barrier layer grown after air exposure with no effects on the quantum wells optical emissions. From the results we conclude that the prepared GaAs surfaces are useful for the epitaxial growth of high quality quantum structures.