Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.     

Material anisotropy revealed by phase contrast in intermittent contact atomic force microscopy

Phase contrast in intermittent-contact atomic force microscopy (AFM) reveals in-plane structural and mechanical properties of polymer monolayers. This is surprising, because measurements of nanoscale in-plane properties typically require contact mode microscopies. Our measurements are possible because the tip oscillates not just perpendicular but also parallel to the sample surface along the long axis of the cantilever. This lateral tip displacement is virtually universal in AFM, implying that any oscillating-tip AFM technique is sensitive to in-plane material properties.     

In-plane elastic property characterization in composite plates

This article presents a method to deduce the in-plane elastic properties of multilayered composite plates. Drawing on a synthetic-aperture technique developed for the elucidation of materials properties in air-coupled ultrasonics, this new method exploits the high elastic anisotropy of composite materials to permit an accurate measurement of directional in-plane stiffness. It is found that comparisons of experimental measurements with plate stiffnesses calculated on the basis of lamination theory agree to within several percent for uniaxial and biaxial laminates and to within 10 percent for quasi-isotropic laminates. It is further shown that the method is largely insensitive to transducer deployment angle within a range related to the transducer beamwidth.     

Velocity measurement using the time-space cross-correlation of speckle patterns

The vector velocity measurement of the in-plane object motion based on the dynamic properties of speckle patterns is conducted. The time-space cross-correlation function of speckle intensity variations is used to determine the magnitude and direction of the in-plane object velocity. Theoretical and experimental studies of the speckle correlation technique for the determination of the in-plane object velocity are discussed and the vector velocities of the diffuse object are displayed as a two-dimensional image.     

缺陷对金属蜂窝材料面内冲击性能的影响

 利用显式动力有限元ANSYS/LS-DYNA,数值研究了缺陷（胞元缺失）的分布位置及其尺寸对金属蜂窝材料面内冲击性能的影响。考虑到理想六边形蜂窝材料在不同冲击速度下的变形特征,将试件划分成9个子区域,讨论了缺陷集中位置、缺陷尺寸和冲击速度对蜂窝材料面内冲击变形模式和能量吸收性能的影响。研究发现,蜂窝材料的面内冲击性能依赖于缺陷的分布位置和缺陷尺寸,且在中低速时表现出较高的敏感性,但冲击速度的增加将弱化缺陷分布不均匀性的影响。由于缺陷的存在,蜂窝材料的能量吸收能力明显降低,但与缺陷分布位置相比,蜂窝材料单位体积所吸收的能量更敏感于缺陷尺寸。研究结果将为多胞材料的安全性评估及能量吸收设计提供理论指导和依据。     

Structure of a stage-3 Cs-graphite intercalate

The influence of interlayer coupling on the in-plane structural properties of the stage-3 caesium-graphite system is investigated using a multilayer molecular-dynamics simulation. We show that the in-plane structure, represented by the circularly averaged pair distribution function, is insensitive to the interlayer coupling over a wide range of temperatures. The structure of the layer is investigated as a function of the parameters of the Cs-Cs potential and of the barrier height for free diffusion created by the graphite periodic potential.     

Field-induced energy band and effective mass anisotropy in coupled double quantum wells

The effects of the field-induced conduction band anisotropy on the electron effective mass and electrical transport properties of coupled double quantum well structures are discussed. This anisotropy is due to the formation of a partial energy gap in the dispersion curves of coupled double quantum wells by an in-plane magnetic field. The reported data show that the magnitude of this gap is mainly dependent on the interwell coupling, although it also depends on the magnitude of the applied magnetic field. A field-induced anisotropy of the electron effective mass and the in-plane electrical transport properties, due to the formation of a saddle point at the lower edge of this gap, is predicted. Further, a simple model to estimate the critical field at which a saddle point appears is also discussed.     

Magnetic anisotropy of Fe films on GaAs(113)A substrates

We employ superconducting quantum interference device magnetometry to study the thickness dependence of in-plane and out-of-plane magnetic anisotropic properties of Fe films grown on high-index GaAs(113)A substrates by molecular beam epitaxy. The evolution of the in-plane magnetic anisotropy with film thickness is distinguished into two regions. First, for Fe film thicknesses ≤50 MLs, we observe an in-plane uniaxial magnetic anisotropy with the easy axis along the in-plane 〈332̄〉 axes. Second, for Fe film thicknesses ≥70 MLs, we observe a four-fold magnetic anisotropy with the easy axis along the in-plane 〈031̄〉 axes. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. Similar to Fe on GaAs(001), our results provide evidence for the interfacial origin of the in-plane uniaxial and out-of-plane perpendicular magnetic anisotropy. Both the uniaxial and the perpendicular interface anisotropy are found to be independent of the epitaxial orientation and are hence an intrinsic property of the Fe/GaAs interface. PACS 75.70.-i; 75.50.Bb; 81.15.Hi     

Dynamic Response and Fracture Mechanism of a Novel Structural Radar Absorbing Material

A novel structural radar absorbing material （SRAM）, which gives the normal resin-base composites new function, is prepared. The dynamic compressive tests of SRAM are carried out in both in-plane and normal directions of composites by means of the split Hopkinson pressure bar （SHPB）. In the compressive test along in-plane direction, failure occurs at the interface between a fibre and the matrix. A fracture mode and mechanism was proposed to explain these results. The addition of absorbing particles results in the deterioration of the compressive properties. However, there is no obvious decrease on compressive strength of SRAM with the radar absorbing properties.     

Ballistic thermal transport in black and blue phosphorene nanoribbons and in-plane heterostructures

The thermal transport properties of black and blue phosphorene nanoribbons and in-plane heterostructures are systematically investigated by non-equilibrium Green's-function method. Both edge shape and width have a sensitive influence on the thermal conductance of pristine black and blue phosphorene nanoribbons and they all exhibit a clear anisotropic thermal performance. Interestingly, the in-plane heterostructures possess a tunable thermal conductance which depends on the percentage of black phosphorene nanoribbons and the way how they are linked. These findings will provide new applications in nanoelectronic and thermoelectric devices based on phosphorene.     

Thermal emission properties of 2D and 3D silicon photonic crystals

We present measurements of the thermal emission properties of 2D and 3D silicon photonic crystals with and without substrate heated resistively as well as passively with an aluminium hotplate. The out-of-plane and in-plane emission properties were recorded and compared to numerical simulation. It turned out that for the in-plane 2D photonic crystal and out-of-plane 3D photonic crystal emission a photonic stop gap effect is visible. For the out-of-plane 2D photonic crystal emission, no photonic bandgap effect is observable but instead strong silicon oxide emission from native oxide inside the pores of silicon are observable. A model for the modified thermal emission is presented.     

Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures

Recently, spin-momentum-locked topological surface states(SSs) have attracted significant attention in spintronics.Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum.In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator(TI)nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures.A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.     

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.     

Confinement of electrons in layered metals

We analyze the out of plane hopping in models of layered systems where the in-plane properties deviate from Landau's theory of a Fermi liquid. We show that the hopping term acquires a nontrivial energy dependence, due to the coupling to in-plane excitations, and the resulting state, at low temperatures, can be either conducting or insulating in the third direction. The latter is always the case if the Fermi level lies close to a saddle point in the dispersion relation.     

Magnetic properties of ultrathin Co films on Si (111)

Ultrathin cobalt films on clean (7×7) and Au covered Si (111) substrates were prepared by molecular beam epitaxy. The structure was studied by using scanning tunnelling microscopy and low energy electron diffraction. Magnetic properties were determined with the magneto-optic Kerr effect. It was found that Co nucleates in grains that prefer to grow along the bunched step edges of the Si substrate ([112?] direction), which induces a strong in-plane uniaxial anisotropy. By introducing Au buffer layers, the magnetic characteristics were improved by preventing the silicide reaction between Si and Co. Moreover, the tendency for step decoration disappears gradually results in the in-plane uniaxial anisotropy reduction.     

Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Plasmonic Airy beam generated by in-plane diffraction

We report an experimental realization of a plasmonic Airy beam, which is generated thoroughly on a silver surface. With a carefully designed nanoarray structure, such Airy beams come into being from an in-plane propagating surface plasmon polariton wave, exhibiting nonspreading, self-bending, and self-healing properties. Besides, a new phase-tuning method based on nonperfectly matched diffraction processes is proposed to generate and modulate the beam almost at will. This unique plasmonic Airy beam as well as the generation method would significantly promote the evolutions in in-plane surface plasmon polariton manipulations and indicate potential applications in lab-on-chip photonic integrations.     

Electrical conductivity of YSZ film grown by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) thin films, 0.6–1.5 μm, were deposited on Pt and sapphire substrates by a pulsed laser deposition (PLD) method. Their structural and transport properties have been studied by means of X-ray diffraction and electrical conductivity measurements. The in-plane and the perpendicular-to-plane conductivities (hereafter, “across-plane” conductivity) of thin films were measured and compared to that of bulk sample. X-ray diffraction and electron microscopy results showed that the films on Pt and sapphire were polycrystalline cubic with a columnar structure. Both the across-plane and the in-plane conductivities of YSZ thin film were close to that of bulk specimens. Thus no conductivity enhancement was found for the present nano-crystalline YSZ films (grain or column size, 60∼100 nm).     

Microwave magnetic properties of soft magnetic thin films

We review our works that focus on the microwave magnetic properties of metallic,ferrite and granular thin films.Soft magnetic material with large permeability and low energy loss in the GHz range is a challenge for the inforcom technologies.GHz magnetic properties of the soft magnetic thin films with in-plane anisotropy were investigated.It is found that several hundreds of permeability at the GHz frequency was achieved for Co100-xZrx and Co90Nb10 metallic thin films because of their high saturation magneti...     

Structure and magnetic properties of γ′-Fe4N films grown on MgO-buffered Si (0 0 1)

γ′-Fe₄N thin films were grown on MgO-buffered Si (1 0 0) by pulsed laser deposition technique. Different crystallographic orientations and in-plane magnetic anisotropies were achieved by varying the growth temperature of the MgO buffer layer. When the MgO buffer layer was grown at room temperature, the γ′-Fe₄N film shows isotropic in-plane magnetic properties without obvious texture; while in-plane magnetic anisotropy was recorded for the γ′-Fe₄N films deposited on a 600 °C-grown-MgO buffer due to the formation of a (1 0 0)-oriented biaxial texture. Such a difference in in-plane magnetic anisotropy is attributed to the epitaxial growth of γ′-Fe₄N film on an MgO buffer with relaxed strain when the MgO layer was grown at a high temperature of 600 °C.