Superconducting tunneling on Chevrel phase thin films

Electron tunneling spectroscopy has been applied for the investigation of Cu_1.8Mo₆S₈, PbMo_6.35S₈ and LaMo₆S₈ d.c. getter-sputtered thin films. Cryogenically deposited Al₂O₃ as the artificial barrier with Al counter-electrode formed the tunnel junctions. The energy gap Δ₀ and the ratio 2Δ₀/k_BT_c were determined from the differential conductance dJ/dV vs. voltage V. Preliminary measurements showed phonon structure in LaMo₆S₈ films.     

Preparation of amorphous films of superionic conducting glasses in systems AgIAg2MoO4 and AgIAg2OB2O3

Thermal evaporation, flash evaporation and rf-sputtering techniques were applied to the preparation of amorphous films of superionic conducting glasses in the systems AgIAg₂MoO₄ and AgIAg₂OB₂O₃. The flash-evaporated films were amorphous and showed very high conductivities, about 2 × 10^?2S/cm for the AgIAg₂MoO₄ and about 5 × 10^?3S/cm for the AgIAg₂OB₂O₃ at room temperature, and gave a Ag⁺ transport number of unity. The thermal evaporation method produced crystalline-phase included films. The rf-sputtered films were amorphous by X-ray diffraction and the transport number of Ag⁺ ions was smaller than unity (about 0.9). Thus flash evaporation was concluded to be the most suitable method for preparing amorphous films of superionic conducting glasses.     

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb₂S₃ thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E_g) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb₂S₃ thin films decreased from 10⁸ to 10⁶ Ω-cm after plasma treatments.     

Superconducting thin films of MxMo6S8 type

Thin films of M_xMo₆S₈, where M=Pb, Sn, Sn-Al and Cu, known as the Chevrel phases have been prepared by d.c. getter sputtering method and the optimal conditions of their preparation have been determined. The transition temperatures reached: 10.16, 13.66, 11.74 and 12.86 K for thin films with M=Cu, Sn, Sn-Al and Pb respectively. The highest critical fields H_c²(0) of 428 kG were obtained for Pb compounds.     

Effects of the substrate temperature on the properties of CuIn5S8 thin films

Structural, optical and electrical properties of CuIn₅S₈ thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn₅S₈ thin films were carried out at substrate temperatures in the temperature range 100-300 °C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 °C and amorphous for the substrate temperatures below 200 °C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10⁵ cm⁻¹ at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 °C. It was found that CuIn₅S₈ thin film is an n-type semiconductor at 250° C.     

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

CuIn₃S₅ thin films were prepared from powder by thermal evaporation under vacuum (10⁻⁶ mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E₀ and dispersion energy E_d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.     

Determination of the B1II-X1Σ and C1Σ-X1Σ electronic transitions strengths of CaO

The strengths S_e of the B¹II-X¹Σ electronic transitions of the CaO molecule have been determined by absorption measurements in a shock tube. Powdered calcium oxide and a gaseous mixture of oxygen and argon in the ratio of 1:5 or 1:9 were introduced into the shock channel. The CaO gas-phase concentration was determined by using the equilibrium constant for CaO?Ca + O; atomic oxygen concentration was calculated and that of calcium was measured spectroscopically. The values of S_e (in atomic units) are for B¹II-X¹Σ, 1.7 ± 0.5; for C¹Σ-X¹Σ, 2.1 ± 0.6.     

Influence of [S2O3]/[Sm] on Sm2S3 thin films deposited by liquid phase deposition method on self-assembled monolayers

Sm₂S₃ thin films were prepared on Si (1 0 0) substrates using SmCl₃ and Na₂S₂O₃ as precursors by liquid phase deposition method on self-assembled monolayers. The influence of the molar concentration ratio of [S₂O₃²⁻]/[Sm³⁺] on the phase compositions, surface morphologies and optical properties of the as-deposited films were investigated. The as-deposited Sm₂S₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) and photoluminescence spectrum (PL). Results show that it is important to control the [S₂O₃²⁻]/[Sm³⁺] during the deposition process and monophase Sm₂S₃ thin films with orientation growth along (0 1 1) direction can be achieved when [S₂O₃²⁻]/[Sm³⁺] = 2.0, pH 3.0, with citric acid as a template agent. The as-deposited thin films exhibit a dense and crystalline surface morphology. Good transmittance in the visible spectrum and excellent absorbency of ultraviolet light of the thin films are observed, and the band gap of the thin films first decrease and then increase with the increase of the [S₂O₃²⁻]/[Sm³⁺]. The as-deposited thin films also exhibit red photoluminescence properties under visible light excitation. With the increase of the [S₂O₃²⁻]/[Sm³⁺] in the deposition solution, the PL properties of Sm₂S₃ thin films are obviously improved.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

Stoichiometry of the chevrel phase SnMo6S8

The phase field of the Chevrel phase Sn_xMo_yS₈ was investigated by metallographic methods. A shift of the phase field away from the “ideal” compound SnMo₆S₈ towards the molybdenum-rich side of the phase diagram was observed. The degree of off-stoichiometry could not yet be determined, however, the c/a ratio of the hexagonal lattice parameters can be used to characterize the samples. Measurements of the superconducting transition temperature indicate two superconducting “phases”, which differ in the c/a ratio of the lattice parameters. While phase A showed a linear variation of T^a_c with c/a in the region from 11.0 to 13.0 K phase B was independent of the c/a ratio with a T^b_c = 10.8 ± 0.2 K.     

Electric current-induced giant electroresistance in epitaxial La0.67Sr0.33MnO3 thin films

The electronic transport behavior of La_0.67Sr_0.33MnO₃ epitaxial thin films with different thicknesses has been investigated under various applied DC currents. The 20 and 70 nm thick films show a giant negative electroresistance (ER). In contrast, the films with 100 nm thickness show unusual giant positive ER, which can reach 30% with the current density of 1.8×10⁸ A/cm² at room temperature. It is interesting that the electric current can also change the magnetoresistance of the films. The results were explained by considering the spin polarized current induced increase of ferromagnetic metallic phase and current-induced lattice distortion via electron wind force under high current density.     

Emission and excitation spectra of Bi2Ge3O9:Eu3+

The emission and excitation spectra of the Bi₂Ge₃O₉:Eu crystal are observed at 77 K and 297 K. The spectra contain groups of sharp lines which are attributed to the transitions within 4f⁶ (Eu³⁺) configuration. The numbers of Stark splitting of terminal levels of transitions from ⁵D₀ and ⁷F₀ multiplets indicate that Eu³⁺ substitutes for Bi³⁺ in Bi₂Ge₃O₉. Tentative assignment of Stark levels of ⁷F_0-4 multiplets is made to crystal quantum numbers of C₃ symmetry which represents the site symmetry of Bi³⁺ in Bi₂Ge₃O₉. The following set of values of crystal field parameters of the C₃ point group is found to give the best overall agreement between the observed energy levels and the calculated levels: B²₀ = -533.84 cm^-1, B⁴₀ = 1085.99 cm^-1, Re(B⁴₃) = 327.57 cm^-1, Im(B⁴₃) = 75.209 cm^-1, B⁶₀ = 185.02 cm^-1, Re(B⁶₃) = - 68.475 cm^-1, Im(B⁶₃) = - 300.45 cm^-1, Re(B⁶₆) = 137.24 cm^-1 and Im(B⁶₆) = 882.29 cm^-1.     

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

Silver antimony selenide (AgSbSe₂) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb₂S₃), silver selenide (Ag₂Se), selenium (Se) and silver (Ag). Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃, Ag₂Se from a solution containing AgNO₃ and Na₂SeSO₃ and Se thin films from an acidified solution of Na₂SeSO₃, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10⁻³ Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe₂ or AgSb(S,Se)₂ depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe₂/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V_oc = 435 mV and J_sc = 0.08 mA/cm² under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe₂ as an absorber material by a non-toxic selenization process is achieved.     

Pb(Zr0.53Ti0.47)O3 thin films with different thicknesses obtained at low temperature by microwave irradiation

Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films with different thicknesses (99-420 nm) were prepared on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by sol-gel method and films were annealed at 450 °C for 30 min using a single-mode cavity of 2.45 GHz microwaves. X-ray diffraction analysis indicated that the pyrochlore phase was transformed to the perovskite phase at above 166 nm films. The grain sizes were increased, surface roughnesses were decreased, and electrical properties were improved with film thickness. The leakage current density was 9 × 10⁻⁸ A/cm² at an applied electrical field of 100 kV/cm. The ohmic and field-enhanced Schottky emission mechanisms were used to explain leakage current behavior of the PZT thin films. These results suggest that microwave annealing is effective for obtaining low temperature crystallization of thin films with better properties.     

阻尼型高温直流超导量子干涉器磁强计的设计

理论分析了超导环路与一个电阻并联结构的直流超导量子干涉器(dc-SQUID)的特性.给出了这种阻尼型dc-SQUID的电压噪声谱密度、传输函数和磁通噪声谱密度随偏置电流变化的曲线.与无阻尼型高温器件比较，调制参量β大于1的阻尼型高温dc-SQUID磁强计具有高稳定性和易调试等优点.当β大于4时，因传输函数的增大，阻尼型dc-SQUID还能降低它的磁通噪声谱密度从而提高磁强计的检测灵敏度.根据现有高温超导薄膜器件的工艺条件，设计了β等于4的阻尼型高温dc-SQUID磁强计的芯片、其磁通噪声和磁场噪声的理论值 关键词：     

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

In this work, we report the formation of CuInS₂ thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In₂S₃) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS₂ (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10⁻⁸ to 3 Ω⁻¹ cm⁻¹ depending on the thickness of the CuS film. CIS films showed p-type conductivity.     

Laser-induced fluorescence and microwave-optical double-resonance study of the B1Σ+-X1Σ+ system of magnesium monoxide

Doppler-limited, laser-induced fluorescence spectra on the B¹Σ⁺-X¹Σ⁺ (v′ = v″ = 0 and 1) system of MgO have been obtained. The results of the optical analysis were merged with our microwave-optical double-resonance measurements to produce the following set of spectroscopic parameters for the B and X states, where the units are in cm^?1, and the uncertainties represent 95% confidence limits: T′_0.0 = 20003.594(2); B′₀ = 0.58004(3); D′₀ = 1.13(2) × 10^?6; B″₀ = 0.57198(3); D″₀ = 1.20(2) × 10⁶; T′_1.1 = 20043.423(2); B′₁ = 0.57528(4); D′₁ = 1.14(11) × 10⁶; B″₁ = 0.56674(4); D″₁ = 1.22(10) × 10⁶.     

Domain-like magnetic structure in superconductors of ErRh4B4 and HoMo6S8 type

The problem of the coexistence of superconductivity and magnetic order is studied by taking into account the indirect exchange interaction, magnetic dipolar interaction and magnetic anisotropy. It is shown that the domain-like magnetic structure should be realized in the superconducting phases of ErRh₄B₄ and HoMo₆S₈ at the temperatures T_m = 1.4 and 0.7 K respectively. The transition from superconducting domain-like phase (DS) to the normal ferromagnetic (FN) state is described.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.     

On the presence of the S4z-term in Fe(HCOO)2 · 2H2O

The magnetic specific heat of ferrous formate dihydrate is analysed on the basis of a model, $\text{S}{}_{\mathrm{A}}\text{=}\text{1}\text{2}$ and S_B = 2. The experimental result turns out to be well explained by the introduction of a large S⁴_z-term for B site ions.