Intraband and interband optical transitions in Zn3AS2

Absorption measurements were made on single crystals and thin films of Zn₃As₂; within the photon energy range of 0.12–1.16 eV at temperatures of 300, 80 and 5 K and reflectivity was measured in the range of 1.0–5.5 eV at 300 K. Absorption below the fundamental edge has been interpreted as a process involving three mechanisms: (i) free-carrier absorption, (ii) intraband transitions between levels in the valence band, and (iii) direct transitions from valence levels to the acceptor level/band. The fundamental absorption edge has been ascribed to direct interband transitions from three valence levels to one conduction level. An isotropic three-level Kane band model has been used to interpret the experimental data, modified by introducing the light-hole level split from the heavy-hole level due to the tetragonal crystal field. A reasonable fit of the model to the experimental results has been obtained in the region of both intraband and interband absorption for the following set of parameters: E_g = 0.985 eV, Δ_SO = 0.30 eV, Δ_CF = 0.05 eV, m^*_hh = 0.36 m₀ and P = 4 × 10^?10eVm (at 300 K). A proposed Zn₃As₂ energy-band model near the Γ point is described to interpret the observed absorption.     

Transient optical absorption induced by an electron pulse in KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> crystals

The efficiency of formation and time evolution of radiation-induced structural defects and pulsed luminescence in KPb₂Cl₅ crystals under the action of a single electron pulse (E = 250 keV, τ = 20 ns) have been investigated. The spectra (1.1–3.8 eV) and relaxation kinetics (time interval 5 × 10^?8?5 s) of transient optical absorption and the pulsed cathodoluminescence spectra and decay kinetics (1.4–3.1 eV) have been measured in the temperature range 80–300 K. It is revealed that the induced optical density and its time evolution depend strongly on temperature, and the absorption relaxation time contains several components and reaches several seconds at T = 300 K. The decay kinetics of transient absorption and pulsed cathodoluminescence kinetics have different orders and are controlled by different relaxation processes.     

IR absorption in p-type pb0.97Sn0.03Se

IR absorption in p-type melt grown Pb_0.97Sn_0.03Se crystals is reported. The results for the room temperature absorption coefficient (α) in the wavelength region 2–15 μm are analysed. The indirect absorption edge is found to be at 0.26 eV for this ternary alloy. In the longwavelength region α is found to be proportional to λ², in agreement with the classical free carrier absorption expression. The conductivity effective mass of holes is found to be 0.067 m₀ at 300°K.     

Electrical conduction and 1ƒ noise in Li-DOPED MnO

Electrical resistivity, thermoelectric power and current noise were measured on Li-doped MnO single crystals in the temperature range from 300 to 1000 K. Below 700 K the crystals are p-type and the activation energy of the resistivity is 0.75 eV. Around 700 K the activation energy changes from 0.75 to 1.25 eV owing to a change from p- to n-type conduction. The depth of the Li acceptor is found to be 0.65 eV. From resistivity and thermoelectric power data it is concluded that the bandgap in first approximation can be written as E_s(T) = E_o ? γT between 750 and 1000 K, with E_o = 1.9 eV and γ = 6 × 10^?4 eV/K. The current noise spectra show $\text{1}\text{?}$ noise. The magnitude of the $\text{1}\text{?}$ noise is strongly temperature dependent. From the noise data it is deduced that E_o = 2.2 eV and γ = 10^?3 eV/K in the temperature range 430–700 K.     

Electronic conductivity and thermopower of Ca2NaMg2V3O12−x garnet

Results are reported from conductivity and thermoelectric power measurements on partially reduced Ca₂NaMg₂V₃O_12?x, with x < 5.10^?2, at temperatures of 300–1100 K. The conductivity is thermally activated with activation energies 0.26 ? E_a ? 1.28 eV for differently reduced samples. The thermopower is temperature independent in the 300–800 K region. These results are shown to be consistent with the adiabatic hopping of small polarons localised on the vanadium sublattice, where defect interactions result in the formation of multiple conduction pathways.     

Knight shifts and magnetic susceptibilities of the intermetallic compounds CeCu4 and CeCu5

The magnetic susceptibility and Knight shift of the compounds CeCu₄ and CeCu₅ have been measured over the temperature ranges 80–800 and 140–400 K, respectively. The most important contributions to the magnetic susceptibility are the Curie-Weiss term, expressing the paramagnetism of the localized ?-electrons, and a temperature independent term, which have both been determined. The phenomenological exchange integral F_s? between the 4?-electron spins and conduction electron spins was found to be ?10.43× 10^?3 eV for CeCu₄ and 3.9 × 10^?3 eV for CeCu₅. A reversal in the sign of the s?? coupling for CeCu₅ is noted.     

Magnetic susceptibilities and knight shifts of the intermetallic compounds NdCu4 and NdCu5

The magnetic susceptibility and Knight shift of the intermetallic compounds NdCu₄ and NdCu₅ were investigated over the temperature range 80–850 K. The most important contributions to the magnetic susceptibility are the Curie-Weiss term, expressing the paramagnetism of the localized 4?-electrons, and a temperature independent term, both of which have been determined. The phenomenological quantity J_s? between the 4?-electron and conduction electron spins was found to be ?2.46.10^?3eV for NdCu₄ and 1.35.10^?3 eV for NdCu₅. A reversal in the sign of the s-? coupling for CeCu₅ was noted.     

Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

Conductivity enhancement in fluorite-structured Ba1−xLaxF2+x solid solutions

The ionic conductivity of single crystals of the fluorite-structured solid solutions Ba_1?xLa_xF_2+x(10^?3 <×<0.45) has been studied as a function of temperature and composition in the range 300–900 K. Three regions can be discerned in the concentration dependence of the ionic conductivity: a dilute concentration region (x<10^?3), where classic relations between solute content and ionic conductivity hold; an intermediate concentration region (10^?3<x?5×10^?2), where large changes occur in the conductivity activation enthalpy and the magnitude of the conductivity; and a concentrated solid solution region (x?5×10^?2) characterized by enhanced ionic motion. In the dilute region the migration enthalpy for interstitial fluoride ions is determined to be 0.714 eV, while a value of 0.39 eV is found for the (La_BaF_i)^X association enthalpy. The defect chemistry in the intermediate concentration region is shown to be controlled by a superlinear increase of the concentration of mobile defects, while in the concentrated solid solution region a composition-independent amount of ≈1 mole% of interstitial fluoride ions with enhanced mobility, carry the current.     

The interaction of Cs and O2 on the basal plane of MoS2

The interaction of Cs and O₂ on MoS₂(0001) has been studied both in the alternate adsorption and the codeposition mode by LEED, AES, TDS and WF measurements at 170 and 300 K. Oxygen does not interact with Cs when θ_Cs?0.04 at 300 K or θ_Cs?0.08 at 170 K, where Cs is known to adsorb as strongly ionized, individual adatoms. The interaction at higher θ_Cs, where Cs is known to form clusters on MoS₂(0001), leads to clusters of a Cs/O complex characterized by a Cs(563 eV)/O(512 eV) Auger peak ratio of 1.1–1.3. The minimum WF is 2.1 eV at 300 and 170 K upon alternate adsorption, and 1.7 eV at both T upon codeposition. Upon heating, oxygen and Cs desorb independently, as no oxide desorption is observed. The Cs TDS spectrum is shifted to lower T in the presence of oxygen and a new desorption peak appears at ～ 880 K. The differences in the Cs/O interaction between MoS₂(0001) and other semiconductors and metals are attributed to the Cs clustering and the inertness of MoS₂(0001) to O₂ adsorption.     

Temperature dependence of the fundamental absorption edge in CuGaSe2

The temperature dependence of the fundamental absorption edge in CuGaSe₂ single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with dE_g/dT = ? (2.1 ± 0.1) eV K^?1. The downshift in dE_g/dT of the I–III–VI₂ compounds compared to their II–VI analogs is discussed accounting for the p-d hybridization of the uppermost valence band.     

Absorption spectrum of trideuteromethane between 7 and 11 μm. Analysis of the ν5 band

The absorption spectrum of trideuteromethane was recorded in the range 900–1400 cm^?1 with a resolution of 0.020–0.025 cm^?1. The ν₅ band centered at 1292.499 cm^?1 is analyzed here. A fit based on 869 observed transitions including J′ values up to 22, leads to a set of spectroscopic constants suitable for energy calculations in the upper-state v₅ = 1. These constants reproduce the experimental wavenumbers with a standard deviation equal to 0.008 cm^?1. The tabulated line strengths are calculated on the basis of the value S = 27.1 cm^?2 atm^?1 at 300 K, measured by Hiller and Straley, for the band strength of ν₅. A useful comparison is made between the values now derived for some constants and the corresponding ones predicted by Gray and Robiette in their recent force field calculations of methane and isotopic species.     

Raman scattering in K2Pt(CN)4Br0.3 · 3H2O

Raman scattering experiments on K₂Pt(CN)₄Br_0.3 · 3H₂O are reported between 5 and 300 K as a function of temperature. A line of A₁ symmetry detected at 44 cm^?1 shows interesting temperature dependent properties. It is concluded from a comparison of the frequency, symmetry, and scattering intensity of this line with theoretical predictions that the excitation concerned represents the amplitude mode of the charge density wave (the line observed in infrared absorption being the phase mode). No Peierls transition is observed, but the results are consistent with a Peierls distortion present at all temperatures. The findings are correlated with inelastic neutron scattering and infrared studies. Finally, the CN stretching modes at 2189 and 2173 cm^?1 and the water mode at 3490 cm^?1 are studied as a function of temperature.     

Electroabsorption in TlInS2

Electroabsorption spectra of single crystals have been studied near the fundamental absorption edge at 77 and 300 K. At 300 K two positive peaks (2.34 and 2.42 eV) and a negative peak (2.38 eV) are observed in the electroabsorption spectrum. At liquid-nitrogen temperature a fine structure corresponding to the formation of a parabolic exciton (2.503 eV) is observed.Values of the width of the forbidden gap E_g, the n = 1 exciton positions, the exciton activation energy ΔE_b, the effective Bohr radius a_exc, the reduced effective mass of an electron-hole pair μ, and the exciton ionization field F(E_g = 2.535 eV, E_exc = 2.503 eV, E_b = 32 meV, $\text{a}{}_{\mathrm{<mtext>exc</mtext>}}\text{=}\text{28}\text{A}\text{A;}\text{;}$;, μ = 0.15 m₀, and F = 1.2 × 10⁵ V cm^-1) have been determined from the electroabsorption spectrum.     

Thermodynamic properties of the CeSn3 mixed valence compound

We have measured on the CeSn₃ compound, the expansion coefficient between 80 and 800 K at normal pressure, the isothermal compressibility in the 0–8 GPa pressure range at room temperature and the heat capacity at constant pressure in the 60–300 K temperature range. The experimental data were compared with those previously found for the isomorphous LaSn₃ phase, assumed as a proper reference material for the study of the intermediate valency states in CeSn₃. Both the thermal expansion (3α) and the isothermal compressibility (k) of CeSn₃ show behaviours quite different from those of LaSn₃: for instance, in the standard conditions, 3α is 55 × 10^?6K^?1for CeSn₃ and 38 × 10^?6K^?1for LaSn₃; k is 15 × 10^?12 Pa^?1 and 12 × 10^?12 Pa^?1 respectively for CeSn₃ and LaSn₃. The thermal behaviour of the molar specific heat at constant pressure of CeSn₃ is similar to that of LaSn₃ for temperatures lower than 50 K. In the 70–300 K temperature range, the heat capacity of CeSn₃ is clearly higher than that of LaSn₃, ΔC_p being maximum near 150 K. The analysis of the calorimetric data show that the electronic coefficient γ of CeSn₃ is temperature dependent: its value varies from 53 mJ K^?2 mole^?1 at low temperature 24 mJ K^?2 mole^?1 at 300 K.     

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Electrical conductivity and fundamental absorption spectra of monocrystalline Cu₇GeS₅I were measured in the temperature ranges 95-370 and 77-373 K, respectively. A rather high electrical conductivity (σ_t=6.98×10⁻³Ω⁻¹ cm⁻¹ at 300 K) and low activation energy (ΔE_a=0.183 eV) was found. The influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu₇GeS₅I, Cu₆PX₅I (X=S,Se) and Ag₇GeX₅I (X=S,Se) compounds. We have concluded that the P→Ge and Cu→Ag cation substitution results in an increase of the electrical conductivity and a decrease of the activation energy. Besides, P→Ge substitution, results in complete smearing and disappearance of the exciton absorption bands and in blue shift of the Urbach absorption edge, an increase of the edge energy width and an electron-phonon-interaction enhancement.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.     

Anomalous temperature dependence of the energy gap of AgGaS2

The lowest energy gap Eg of AgGaS₂ in the temperature range from 4.2 to 300° K was determined from the reflectivity, photoluminescence and absorption measurements. Below ～ 80° K the temperature coefficient of the energy gap is +6 × 10^-5eV/°K. Above ～80° K the sign of the coefficient reverses and the value is -1.8 × 10^-4eV/°K. The positive value is explained with the lattice dilation effect being the dominant mechanism for the energy gap variation at lower temperatures than ～80°K.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.