电离层中性气体释放的早期试验效应研究

在电离层释放电子吸附类中性气体能够引起电离层电子密度耗空,在释放之后快速形成"电离层洞";同时,由于释放气体的快速膨胀,挤压背景等离子体,在电离层洞的外边缘产生"壳状"电子密度增强结构,电离层洞和电子密度增强结构同时存在是释放早期试验效应的显著特征.本文研究了电离层中性气体释放的早期试验效应,建立了释放早期电子密度的时空演化物理模型,仿真了释放早期电子密度的时空演化过程,同时采用射线追踪方法研究了释放后10 s和120 s不同频率信号在扰动区的传播效应,并反演得到了电离层垂直探测电离图,反演结果与一次火箭喷焰的实际观测结果吻合较好,初步验证了本模型的正确性.     

Vanishing of the Mott transition in semiconductor nanocrystals

The dynamics of the system of photoexcited electron–hole pairs in semiconductor nanocrystals of different size with increasing excitation intensity was experimentally studied by utilizing the luminescence spectra of semiconductor-doped glasses in order to elucidate the peculiarities of many-body effects in structures approaching the zero-dimensional limit. Vanishing of effects causing the Mott transition in bulk crystals was observed with decreasing nanocrystal radius, and a new type of transformation of excitons to unbound electron–hole pairs was shown to take place in nanocrystals where the energy shift for electrons and holes due to quantum confinement becomes comparable with the exciton binding energy.     

Enhanced exciton–LO phonon coupling in doped quantum dots

We present photoluminescence measurements under strong magnetic field done on a sample with charged (n-doped) quantum dots. We have shown that the broadening of the luminescence line does not give a measure of the QDs size dispersion, and that the coupling of electron/hole pairs with LO phonons is greatly enhanced, because of the presence of the ionised impurities nearby the charged dots.     

On the phase diagram of a two-dimensional electron–hole system

The phase diagram for a system of spatially separated electrons and holes in coupled quantum wells or graphene double layers is studied in the framework of a BCS-like mean-field approach and a Landau expansion in terms of the pairing order parameter. We find a second order transition between an electron–hole plasma and a BCS phase, as well as a first-order transition between the BCS phase and a bosonic Mott phase of tightly bound electron–hole pairs without phase coherence. The electron–hole plasma exists at low and at high densities for weak interaction, the BCS phase at moderate density and the Mott phase at high density and strong interaction.     

Excitation of self-trapped-exciton luminescence in the recombination of frenkel defects in BeO

Polarized luminescence and transient optical absorption (TOA) induced by pulsed electron irradiation in beryllium oxide crystals were studied. Exponential stages with decay times τ = 6.5 ms were observed to exist in luminescence bands at 4.0, 5.0, and 6.7 eV, which coincide in spectral composition and polarization characteristics with the luminescence of self-trapped excitons (STEs) of two types. The formation efficiency of centers with a 6.5-ms decay time is comparable to that of triplet STEs. The general characteristics of the kinetics and the decay times of the TOA of these centers do not depend on electron fluence and are governed by the monomolecular recombination process. The spectra of TOA centers with a decay time of 6.5 ms were found to be similar to those of V-type hole centers and STE hole components. The mechanism by which recombination of closely spaced, spatially correlated Frenkel pairs, Be⁺ and V^? centers, brings about an exponential component with a 6.5-ms decay time in the luminescence of STEs of two types in BeO is discussed.     

Luminescence in amorphous semiconductors

A review of the luminescence properties of amorphous semiconductors is presented. The materials covered are chalcogenide glasses, silicon and arsenic. Luminescence spectra, excitation spectra, temperature dependences and lifetimes are described.

The radiative transition in chalcogenides is the recombination of an electron in the conduction band tail and a trapped hole. A strong electron-phonon coupling distorts the lattice near the trapped hole, lowering its energy. This interaction is responsible for the broadness of the luminescence band and its position at about half the band gap energy. The recombination centre is thought to be a charged dangling bond with density 10¹⁷ cm^-3 in arsenic chalcogenides and 10¹⁶ cm^-3 in selenium. The same centre is observed in the hole drift mobility, and thermally stimulated conductivity.

Luminescence in amorphous silicon also originates from recombination between the band tails and deep centres, with three separate transitions identified. In contrast to chalcogenides the electron-phonon coupling is not strong. The shape and intensity of the spectra are very sensitive to sample preparation and treatment, and correlate with other electrical and optical properties of Si.     

碳氮缺陷修饰g-C3N4/WS2异质结光催化性质的第一性原理研究

本文采用第一性原理方法计算了四种不同g-C₃N₄/WS₂异质结的超晶胞结构、功函数、能带结构、态密度和吸收光谱,研究了不同缺陷对g-C₃N₄/WS₂异质结的电子结构和光催化性能的影响.发现g-C₃N₄/WS₂、g-C₃N₄/WS₂-V_1N、g-C₃N₄/WS₂-V_1N1C、g-C₃N₄/WS₂-V_1N2C均能形成稳定的异质结,g-C₃N₄/WS₂-V_1N1C和g-C₃N₄/WS₂-...     

Creation of electronic excitations and defects by vuv radiation (6-40 eV) in wide-gap solids

The processes of multiplication of electronic excitations (MEE), connected with the creation of secondary excitons or electron-hole (e-h) pairs by hot conduction electrons, are realized in wide-gap metal halides and oxides. In oxides, secondary e-h pairs can be also formed by 27-40 v eV photons due to L 1 VV Auger transitions (with the participation of 2s oxygen holes). The excitation spectra of luminescence and the creation spectra of electron F centres or hole V centres have been measured for Na 6 Al 6 Si 6 O 24 (NaI) 2x sodalites and MgO:Be, respectively, at 8-80 v K. A high local density of excitations has been revealed under MEE conditions in KBr and Br sodalites with self-trapping excitons and holes.     

Detection of directed electron-hole recombination energy transfer from an ionic crystal matrix to self-assembled nanocrystals

It is found that the energy released in the spin-dependent tunneling recombination of electron-hole pairs and self-trapped excitons in an ionic crystal matrix is directionally transferred to low-dimensional semiconductor structures embedded in the matrix as a result of self-assembled growth. The EPR spectra of electron and hole centers in the matrix crystal are detected by tunneling afterglow and photostimulated luminescence that are excited in the low-dimensional structure.     

Molecular electronic distribution functions and correlation holes Theory and application to H2, LiH and BH

The one-electron density functions for the diatomic hydrides H₂, LiH and BH, defined with respect to a limited STO basis set, are partially integrated to yield longitudinal and transverse distribution functions which admit of a simple pictorial representation. The maxima in the longitudinal distribution functions occur in regions conventionally ascribed to core pairs, lone pairs or bond pairs.

The correlation between pairs of electrons of given spin is then analysed in terms of the analogous partially integrated pair density functions and in terms of the associated hole functions. In the case of LiH and BH, the Fermi hole functions are similar in form to the negatives of the one-electron distribution functions for the appropriate singly occupied molecular orbitals; but the differences between the two functions are more marked in BH, where there is increased spatial interpenetration of the valence electron pairs. The results also show, in a simple way, how the electron motion is over-correlated in H₂ when the Heitler-London wavefunction is used.     

Collisional Lifetimes of Elementary Excitations in Two-Dimensional Systems in the Field of a Strong Electromagnetic Wave

A two-dimensional system with two nonequivalent valleys in the field of a strong circularly polarized electromagnetic wave is considered. It is assumed that the optical selection rules for a given polarization of light allow band-to-band transitions only in valleys of one, optically active, type (two-dimensional layer based on transition metal dichalcogenides, gapped graphene, etc.). This leads to the formation of photon-coupled electron–hole pairs, or an “optical insulator” state. It is assumed that the valleys of the second type (optically inactive) are populated with an equilibrium electron gas. The relaxation of elementary excitations in this hybrid system consisting of an electron gas and a gas of electron–hole pairs caused by the Coulomb interaction between the particles is investigated.     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

Weakly relativistic and space charge effects in interaction of high-power microwave with plasma

In the present work, numerical studies on the effects of weakly relativistic ponderomotive force and space charge in the nonlinear interaction of a high-power microwave beam with a plasma are carried out. It is shown that, the profiles of the electron density and dielectric permittivity contain high peaks, and modulation of wavelength occurs in electron density distribution by increasing the microwave energy flux. In addition, it is indicated that the profiles of the electric and magnetic fields in relativistic regime are lengthened more than non-relativistic regime by increasing the initial electron density and the relativistic effects cause the increase in oscillation wavelength of electron density, dielectric permittivity and space charge field, in comparison with the non-relativistic regime. Finally, the results of the research show that the steepening in electron density distributions and their oscillation wavelength are enhanced, when the relativistic effects appear.     

Numerical evaluation of energy loss rate for hot carriers in quantum wells

Using the Fröhlich potential associated with realistic optical phonon modes in quantum well systems, the energy loss rates of hot electrons, holes, and electron–hole pairs are calculated, with special emphasis on the effects of carrier density, hot phonon population, quantum well width, and phonon dispersion on the hot-carrier relaxation process in quasi-two-dimensional systems.     

Quantum melting of the hole crystal in the spin ladder of Sr(14-x)CaxCu24O41

We have used resonant soft x-ray scattering to study the effects of discommensuration on the hole Wigner crystal (HC) in the spin ladder Sr(14-x)CaxCu24O41 (SCCO). As the hole density is varied the HC forms only with the commensurate wave vectors L(L) = 1/5 and L(L) = 1/3; for incommensurate values it "melts." A simple scaling between L(L) and temperature is observed, tau1/3/tau1/5 = 5/3, indicating an inverse relationship between the interaction strength and wavelength. Our results suggest that SCCO contains hole pairs that are crystallized through an interplay between lattice commensuration and Coulomb repulsion, reminiscent of the "pair density wave" scenario.     

MOCVD生长的GaN单晶膜的蓝带发光研究

对实验室用ＭＯＣＶＤ方法生长的未掺杂ＧａＮ单晶膜的发光性能进行了研究。结果表明：在室温时未掺杂ＧａＮ单晶出现的能量为２．９ｅＶ左右蓝带发光与被偿度有较强的依赖关系。高补偿ＧａＮ的蓝带发射强,低补偿ＧａＮ的蓝带发射弱。对蓝带发光机理进行了探讨,认为蓝 导带电子过至受主能级的发光（ｅＡ发光）。观察到降低ＧａＮ补偿度能提高ＧａＮ带边发射强度。     

Luminescence due to metallic electron-hole liquid in GaAs

Emission spectra of high-purity GaAs have been studied at 4.2K under very intense optical excitation. The results give the first experimental evidence for an important contribution of the electron-hole liquid phase in the luminescence of a direct-allowed semiconductor. Theoretical fit of the luminescence band-shape is satisfactory. The effects of applied electric field on the emission spectra are explained well using a concept of the metallic electron—hole plasma state.     

Theoretical study on the electronic structures and phosphorescent properties of four Ir(III) complexes with different substituents on the ancillary ligand

The geometry structures, electronic structures, absorption and phosphorescent properties of four Ir(III) complexes {[(F₂-ppy)₂Ir(pta-X)], where F₂-ppy = (2,4-difluoro)phenylpyridine; pta = pyridine-1,2,4-triazole; X = –CF₃; –H; –CH₃; –N(CH₃)₂}, are investigated using the density functional method. The results reveal that the electron-accepting group –CF₃ has no obvious effect on absorption and emission properties, while the substitutive group –N(CH₃)₂ with strong electron-donating ability has obvious effect on the emission properties. The mobility of hole and electron were studied computationally based on the Marcus–Hush theory. Calculations of ionisation potential and electron affinity were used to evaluate the injection abilities of holes and electrons into these complexes. We hope that this theoretical work can provide a suitable guide to the future design and synthesis of novel phosphorescent materials for use in the organic light-emitting diodes.     

Multicomponent Electron–Hole Liquid in Si/SiGe Quantum Wells

The density functional theory is used to calculate the energy of an electron–hole liquid in Si/Si_1–xGe_x/Si quantum wells. Three one-dimensional nonlinear Schrödinger equations for electrons and light and heavy holes are solved numerically. It is shown that, in shallow quantum wells (small x), both light and heavy holes exist in the electron–hole liquid. Upon an increase in the Ge content, a transition to a state with one type of holes occurs, with the equilibrium density of electron–hole pairs decreasing by more than a factor of 2.     

The I.R. photoluminescence emission band in ZnO

Measurements of emission spectra, excitation spectra, intensity dependence of the luminescence, decay of the luminescence, and temperature dependence of the luminescence in ZnO are reported. The results for the emission at 1·70 eV, with the exception of the decay of the luminescence, were found to be similar to those of the yellow (2·02 eV) emission band in ZnO. Both bands could be excited at the band edge and directly, the intensity of both bands was found to be linear with excitation strength and the asymptotic regions of the temperature dependence of both bands could be approximated by exponential functions. It is proposed that the luminescent transition is an electron transition from the edge of the conduction band to a hole trapped in the bulk at 1·60 eV above the edge of the valence band, and that the luminescence center is an unassociated acceptor-like center.