Electronic structure of p-type transparent conducting oxide CuAlO2

Copper-based delafossite oxides are excellent candidates for the p-type transparent conducting oxide (TCO), which is essential in realizing transparent semiconductor applications. Using angle-resolved photoemission spectroscopy (ARPES), we report the low-energy electronic structure of CuAlO₂. We found that the band structure near the valence band top is characterized by hole bands with their maxima along the Brillouin zone boundary. Furthermore, the effective masses along the Γ–M and Γ–K directions were found to be (0.6 ± 0.1) m₀ and (0.9 ± 0.1) m₀, respectively, which impose an important benchmark against the existing band calculations.     

Exciton spatial dispersion determined through the two-photon Raman scattering via excitonic molecule state at large wave vectors in CuCl

With simultaneous excitation of two dye laser beams the Raman scattering is studied in which the intermediate state is the excitonic molecule and the final states are the longitudinal and transverse excitons. The L-T splitting shows a large k-dependence. The effective masses are determined to be (2.3 ± 0.1)m₀ and (3.1 ± 0.1)m₀ for the transverse and longitudinal excitons, respectively.     

Electron spinT 2 of a nitroxyl radical at 250 MHz measured by rapid-scan EPR

Rapid-scan electron paramagnetic resonance (EPR) was used to measure the room temperature spin-spin relaxation timeT ₂ for the per-deuterated nitroxyl radical, 4-oxo-2,2,6,6-tetramethylpiperidin-1-oxyl-d₁₆ in water at 250 MHz. Signals were recorded on a locally constructed system using either sinusoidal or triangular magnetic field scans. Values ofT ₂ were obtained by simulation of the rapid-scan response and were systematically shorter for the high-field line (m ₁=?1) than for them ₁=0 or +1 lines. Form ₁=+1, the value ofT ₂ increased from 0.41±0.03 μs at 0.5 mM to 0.53±0.03 μs at 0.1 or 0.2 mM. Form ₁=?1,T ₂ increased from 0.35±0.03 μs at 0.5 mM to 0.42±0.03 μs at 0.1 or 0.2 mM. These values put lower bounds on the values ofT ₁ for this nitroxyl at 250 MHz.     

The location and shape of the conduction band minima in cubic silicon carbide

We have measured the inter-bound state excitation spectrum of the N_C donor in cubic β-SiC through the ‘two-electron’ transition satellites observed in the luminescent recombination of excitons bound to neutral N donors. Transitions are seen to p as well as s-like donor states although the transition oscillator strength is derived from interaction with the impurity core since parity is conserved through inter-valley scattering by p-like X phonons. The Zeeman splitting of a luminescence line involving the 2p± donor state yield the electron mass parameter m_t = 0.24 ± 0.01 m₀. This and the directly measured energy separations of the 2p₀ and 2p± states yields m_t/m₁ = 0.36 ± 0.01 with the static dielectric constant K = 9.92 ± 0.1. Mutually consistent central cell corrections of 1.1 and 8.4 meV are observed for the 2s(A₁) and 1s(A₁) donor states, the latter being in agreement with a recent estimate from electronic Raman scattering by Gaubis and Colwell. The ionization donor energy of the N_C donor, 53.6 ± 0.5 meV is consistent with earlier, less accurate estimates from donor-acceptor pair and free to bound luminescence. There is no evidence for a ‘camel's back’ conduction band structure in cubic SiC, unlike GaP. The two-phonon sidebands of the N_C donor exciton luminescence spectrum in SiC can be constructed by X and Г phonons only.     

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m_c = (0.38 ± 0.03)m₀ and m_c = (0.40 ± 0.03)m₀ for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g_v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.     

Magneto-Brillouin scattering of polaritons in CdS

Resonant Brillouin scattering of excitonic polaritons is investigated for the first time in high magnetic fields. For the A-exciton of CdS the observed number of scattering lines and their Brillouin shifts in fields up to 10.0 Tesla can be explained assuming two excitonic oscillators which result from the field induced mixing and splitting of allowed Γ₅- and forbidden Γ₆-states. The determined parameters are : Δ₅₆ = (0.2±0.03) meV, g_e⊥ = 1.75±0.05 and δ_dia = (0.2±0.02) · 10^-2 meV/Tesla².     

Microwave cyclotron resonance of hot electrons in p-type GaSb

A microwave photocreated cyclotron resonance signal is observed in p-type GaSb in the temperature range 1–30 K. Circular polarization and other measurements identify the carriers as electrons in the (000) conduction band. The problem of a surface effect on the measured peak position, reported for the first time is avoided by bulk carrier creation. An exponential loss of signal intensity at 27 K is explained by the theory of background plasma effects. The measured ωτ of 1·5–4 yields an electron collision time of τ ～ 10^?11 sec. The scattering mechanism at liquid helium temperatures is identified as being partly due to neutral defect acceptor scattering of hot electrons, with an unidentified residual scattering process. The electron polaron effective mass is measured to be (m *(polaron)/m₀) = 0·0412 ± 0·0012 for hot electrons with an average energy of ～ 14 MeV and is isotropic within 1 per cent. When corrections for conduction-band non-parabolicity and hot polaron effects are applied, the band-edge free electron mass is calculated to be (m₀*(free)/m₀) = 0·0396 ± 0·0021 (±5·2 per cent).     

Pressure effects on the magnetic transition temperatures of NiS2

Both antiferromagnetic (T_N) and weak ferromagnetic (T_c) transition temperatures of NiS₂ have been measured under pressure up to 18.4 kbar. Values of dT_N/dP=(0.9 ± 0.1) deg/kbar and dT_c/dP=(0.4 ± 0.1) deg/kbar are obtained. The present results allow estimates of the magnetic Grüneisen constant γ_m = - d ln T_N/d ln V of (26±5) and of the entropy change of (1.4±0.5) J/mol·deg at the first order transition temperature T_c.     

Analysis of experiments on the measurement of the pion electromagnetic formfactor

We analyse the experiments [1–3] on the measurement of the pion electromagnetic formfactor in the time-like and space-like region using an expression with correct analytical properties and with the asymptotics predicted by QCD. The best fit values for the physical quantities (1) electromagnetic radius of the pion:r _π ² =0.466±0.002 fm², (2) the mass and width of the ρ (770) and the ρ′ (1600) meson:m _ρ=768±1 MeV,Г _ρ=138±1 MeV,m _ρ′=1546±26 MeV,Г _ρ'=620±60 MeV; (3) the residuesg _ρ m _ρ ² =0.676±0.003,g _ρ′ m _ρ′ ² =?(0.644±0.009); (4) the ππ-scattering lengtha ₁ ¹ =(0.1±0.01)m _π ^?3 .     

Der Zerfall des Co60m und Zr90m

Co^60m was produced by the reaction Co⁵⁹ (n,γ) Co^60m ; its decay has been investigated by scintillation spectrometers. The half-period has been remeasured yielding a value ofT _1/2=(10·35 ±0·20) min. The isomeric decay mainly leads to the Co⁶⁰ ground state by a (58·6±0·6) keV transition. TheK-conversion coefficientα _K= 41±3 and the total conversion coefficientα=47±3 indicate the transition to beM3 and the spin of Co^60m to be 2⁺. Further Co^60m decays by beta transitions to Ni⁶⁰. The beta component (8·6±1·2)·10^?3%, log ft=7·32 leading to a (2·16±0·02) MeV level has been measured for the first time. A second component (0·24±0·03)%, log ft=7·23 leads to the 1·33 MeV level. The 2·16 MeV level decays to the Ni⁶⁰ ground state mainly by a 0·83–1·33 MeV cascade, in a few cases by a direct transition. The spin of the 2·16 MeV level is 2⁺. Zr^90m was produced by the reaction Zr⁹⁰ (n,n′) Zr^90m . The half-period was measured yielding a value ofT _1/2=(0·83±0·03) sec. Zr^90m decays in the following way: (77±5) % by a direct (2·31±0·02) MeV —E 5 transition to the Zr ground state and (23±5)% by a (132·5±1·5) keV-(2·18±0·03) MeV cascade detected for the first time in the isomeric decay. TheK-conversion coefficient of the 132·5 keV transition isα _k=(2·2±0·3) indicating this transition to beE3 and the spin of the 2·18 MeV level to be 2⁺. The Zr^90m -decay sheme is in accordance with the level sequence of Zr⁹⁰ as measured in the Nb⁹⁰ decay.     

Brillouin and raman scattering studies of the melting transition in salol

Brillouin and Raman scattering studies of salol from room temperature to within 5 mK of the melting transition at T_m = 40.97°C are reported. Changes in the Brillouin shifts and linewidths were accurately determined by nonlinear least-squares fitting and deconvolution. A marked increase in the deconvoluted Brillouin linewidth (~400%) and a gradual softening (~20%) of the transverse acoustic modes were observed very close to T_m. The increase of the Brillouin linewidths was analyzed by a simple dislocation model assuming the hypersonic attenuation to be proportional to the concentration of thermally generated defects near T_m. The defect formation energy E_D(T) was computed from the temperature-dependent linewidth data, and was found to decrease significantly (~60%) near T_m, suggesting a cooperative effect producing a catastrophic growth of defects which brings about melting by destroying the long range order of the crystal. The conclusion that melting is mediated by a sudden growth of defect concentration near T_m was further strengthened by Raman scattering experiments in which 13 new Raman modes appeared close to T_m. These new modes are believed to be defect activated through breaking of the local symmetry of the crystal. A slight softening of the Raman modes (~5%) was observed close to the melting point.     

Acoustic NMR in spin-1 systems

Acoustic magnetic resonance, both pulsed and continuous has been discussed in terms of the Bloch-Wangsness-Redfield formulation of the magnetic resonance phenomenon. The quadrupolar mechanism has been taken for the spin-phonon coupling and the mutual interaction has been treated in the ‘effective field approximation’. The expressions for the power absorbed both for Δm=±1 and Δm=±2 have been obtained. It is found that from the measurements of the relaxation parameters for Δm=±1 and Δm=±2 it is possible to estimate the non-secular contributions to the line-width. The power absorbed in pulse excitation comes out to be small for short pulse (short compared to the relaxation parameter) and it reduces to the value obtained in continuous excitation for a long pulse. It is seen that for a given pulse-width the signal decreases with the increase of the relaxation parameter and this happens as temperature is lowered. The saturation of electromagnetic signal in presence of the acoustic excitation has also been studied. The analysis indicates that the relaxation parameter obtained from the plot of the relative signal (〈〉_ω/〈〉₀) vs the acoustic frequency ω, is always less than its true value which can be determined by observing the frequency dependence of the relative fractional signal defined as [(〈〉₀?〈〉_ω)/〈〉_ω]/[(〈〉₀?〈〉_2ω0)/〈〉_2ω0].     

Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi₂Se₃ having a higher carrier density (～9 × 10²⁵m^-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m₀) found for these carrier concentrations indicates that the band is non-parabolic.     

Neutron diffraction studies of the magnetic ordering in the rare earth compounds TbNi2Si2, HoCo2Si2 and TbCo2Si2

Neutron diffraction studies and magnetic measurements on the compounds TbNi₂Si₂ (1), HoCo₂Si₂ (2) and TbCo₂Si₂ (3) revealed a collinear antiferromagnetic order below T_N = 10 ± 1 K (1), T_N = 13 ± 1 K (2) and T_N = 30 ± 2 K (3) with the rare earths moments oriented along the c-axis [m₀ = 8.8 ± 0.2 μ_B (1), m₀ = 8.1 ± 0.2 μ_B (2), m₀ = 8.8 ± 0.2 μ_B (3)] and the corresponding wavevector are $\text{k}\text{= [}\text{1}\text{2}\text{1}\text{2}\text{0] (1)}\text{and}\text{k}\text{= [ 0 0 1] (2) (3)}$. The magnetic structure of the compounds HoCo₂Si₂ and TbCo₂Si₂ consists of ferromagnetic layers perpendicular to the c-axis coupled antiferromagnetically (+?+?) while for TbNi₂Si₂ the ordering within (0 0 1) plane is antiferromagnetic and the planes (0 0 1) are indeed decoupled.     

SU(3) lattice Monte Carlo calculation of the glueball mass spectrum

We have calculated the glueball masses of various spins and parities in SU(3) gauge theory. Our first results give m_M(0⁺⁺)=(3.6±0.2)Λ_mom, m_E(0⁺⁺)=(4.3±0.3)Λ_mom, m(0^?+)=(7.2_?0.9^+1.6)Λ_mom, m_M(2⁺⁺)=(8.1±1.1)Λ_mom and m_E(2⁺⁺)=(8.3_?1.0^+1.6)Λ_mom as well as information on the glueball wave functions.     

The glueball mass spectrum in QCD: First results of a lattice Monte Carlo calculation

We perform a variational calculation of the masses of glueballs of various spins and parities in SU(2) gauge theory. The quantum vacuum we use is generated by the lattice Monte Carlo technique. Our first results, obtained on medium sized lattices give m(0⁺) = (3.6 ± 0.35) Λ_mom, m(0^? = (6.0 ± 1.0)Λ_mom, m(2⁺) = (6.5^+1.8_?1.1)Λ_mom, various mass upper bounds and information on glueball wave functions.     

The decay of115 mIn

The decay of^115m In has been investigated using accurate counting methods. The emission rate of conversion electrons plusβ ^?-particles was determined with a 4π proportional flow counter. The total andK-shell internal conversion coefficients of the 336 keVγ-ray in¹¹⁵In were measured by the electron X-ray coincidence method using combinations of a Si surface barrier with a NaI(Tl) detector and of a magneticβ-spectrometer with a high energy resolution Si(Li) detector, respectively. The conversion ratioR=K/(L+M+...) was deduced from electron spectra recorded with the magneticβ-spectrometer. The 336 keVγ-ray emission rate of all used sources was determined with a calibrated NaI(Tl)γ-ray spectrometer. A Ge(Li) detector has been used to determine the relative intensity of the 497 keVγ-ray in¹¹⁵Sn. As results have been deduced the 336 keVγ-ray emission per decay (N _γ1/N ₀=(45.9 ± 0.1)%), the total internal conversion coefficient (α=1.073 ± 0.014), theK-shell internal conversion coefficient (α _K=0.843±0.012), the conversion ratioR=3.63±0.07, theβ ^?-transition per decay going to the ground state (N _β1/N ₀=(5.0 ± 0.7)%) and to the first excited level in¹¹⁵Sn¹¹⁵Sn(N _β2/N ₀=(0.047 ± 0.002)%), and the 497 keVγ-ray emission (N _γ2/N _γ1=(0.103 ± 0.004)%). From the obtained internal conversion data it follows that the 336 keVγ-ray transition is ofM4 character with anE5 admixture of less than (3.5±1.5)%. The half-life of the isomeric state¹¹⁵ mIn has been determined with four different methods. The result isT _1/2=(4.486±0.004) h.     

Intensities of rotational lines in first overtone bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the first overtone bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlines by Hanson and Nielsen. General formulas for the intensities of the lines in the first overtone bands 2ν_n and 2ν_m are obtained, where n and m denote normal modes of species A₁ and E, respectively. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel overtone band 2ν_n. For the overtone band 2ν_m, the selection rules are more complicated, being ΔJ = 0, ±1; Δl_m = 0 and ΔK = 0, Δl_m = ±2 and $\text{Δ}\text{K = ?1}$, or Δl_m = ±2 and ΔK = ±2.     

Upper bounds on Higgs-Boson masses in the Weinberg-Salam model with three Higgs doublets

In the Weinberg-Salam model with three Higgs doublets, the positivity of masses and tree graph unitarity applied on Higgs scattering lead to the following upper bounds on Higgs masses: m_H1^±, m_H2^± < 883 GeV, m_H1⁰ < 500 GeV, m_H2⁰, m_H3⁰ < (958–1633) GeV, m_H4⁰, m_H5⁰ < (360–883) GeV.     

Measurement of the kaon mass difference mL-mS by the two regenerator method

The K⁰ mass difference has been measured by the two regenerator method. The result is: Δm = m_KL ? m_KS = (0. 534 ± 0.003) × 10¹⁰ sec^?1.