Ku波段介质谐振器稳频电调FET振荡器

<正>目前,大多数FET DRO都采用反射型或反馈型电路形式。由于反馈型结构电路简单,频带宽,调试方便,不跳模,为此,采用反馈型电路,变容管通过一开路线与介质谐振器耦合,研制出一Ku波段介质谐振器稳频电调FET振荡器,其电路结构如图1所示。整个电路制作在22mm×15mm×0.6mm,ε_r=9.6的陶瓷基片上。     

C波段介质谐振器稳频FET振荡器

本文运用电磁场理论对圆柱形介质谐振器进行了分析和计算,并设计制作了C波段反馈型介质谐振器稳频FET振荡器,其工作频率f_0=7.4GHz,输出功率P≥30mW,频率稳定度为±2×10~(-5)(-10～+50℃),频率温度系数为0.67ppm/℃。     

高稳定度中功率C波段耿氏DRO

文章介绍了 C 波段介质谐振器稳频耿氏振荡器实用电路结构,简明分析了耿氏 DRO 稳频和工作原理以及用高 Q 介质谐振器稳频和双金属补偿所得的实验结果:在5.3GHz 附近,振荡器输出功率为280mW,在-40～+60℃范围内,振荡器频率温度系数为0.56PPm/℃,功率温度系数小于0.01dB/℃。     

5公分中功率高效率高稳定度FET振荡器

我们研制了一种普通封装的GaAs FET 和高Q介质谐振器的共漏振荡器。这种共漏振荡器采用FET沟道反向的办法,利用自身的栅源电容构成反馈电路,省去了复杂的外反馈网络;还采用了高Q介质谐振器作成反射型的稳频电路,解决了频率稳定度的问题。这种振荡器结构简单、调试方便,在4～6GHz范围内输出功率大于300mw,效率超过30％,机械调谱带宽大于100MHz;在-40～+70℃温度范围内,频漂小于±O.6MHz,频温系数为2×lO~6/l℃。     

W波段宽带机调Gunn振荡器

本文介绍了一种宽带机调Gunn振荡器。该振荡器结构简单可靠,单只振荡器就几乎可覆盖整个W波段,振荡器的最大输出功率可达25mw,在所有各频率点上的电调带宽约为450MHz。     

New Design Approach for Wide-Band FET Voltage-Controlled Oscillators

A new, computer-assisted method, based on small-signal "S" parameters, is described for the systematic design of wide-band VCO's. The method has been applied to design 6-12-GHz and 12-18-GHz GaAs FET VCO's, and it has shown an excellent capability to predict the maximum obtainable tuning bandwidth. The tuning linearity of the VCO's has also been optimized Delta f/f <= +-0.4 percent over a 3-GHz bandwidth.     

L波段低相位噪声压控振荡器

对微波晶体管振荡器的相位噪声进行了分析。为达到压控振荡器的低相位噪声要求,采用了低电平振荡经放大后输出的设计方案。实现的微带压控振荡器工作于L波段. 相对电调带宽大于10％,不加介质谐振器其SSB相位噪声约达到一90dBC/Hz/10kHz;经加放大输出功率达到10mW以上,功率平坦度≤±0.7dB. 在-20～+60℃范围内正常工作,频率温度稳定性为6×10~(-5);本压控振荡器已应用于频率合成器中。     

Large-Signal Technique for Designing Single-Frequency and Voltage-Controlled GaAs FET Oscillators

A systematic procedure is described for designing fixed-frequency and voltage-tuned GaAs FET oscillators for optimum large-signal performance. The approach is based on the use of a large-signal FET model for de-embedding dominant device nonlinearities, leading to a method which is both accurate and simple to apply. The viability of the technique is demonstrated with a 17-GHz fixed-frequency oscillator and a 7.4 to 13.1-GHz varactor-tuned oscillator. Design considerations as well measured performance characteristics are discussed in detail.     

Transformer-Based Dual-Mode Voltage-Controlled Oscillators

In this brief, we propose to use a transformer-based resonator to build a dual-mode oscillator, e.g., a system capable of oscillating at two different frequencies without recurring to switched inductors, switched capacitors, or varactors. The behavior of the resonator configured as a one-port and a two-port network is studied analytically, and the dependence of the quality factor on the design parameters is thoroughly explored. These results, combined with the use of traditional frequency tuning techniques, are applied to the design of a wide-band voltage-controlled oscillator (VCO) that covers the frequency range 3.6-7.8 GHz. The performance of the designed VCO, implemented in a digital 0.13-mum CMOS technology, has been studied by transistor-level and 2.5D electromagnetic simulation (Agilent Momentum). A typical phase noise performance at 1-MHz offset of -104 dBc/Hz has been predicted, while the power consumption ranges from 1 to 8 mW, depending on the VCO configuration     

K波段介质谐振器稳频GaAs FET谐波振荡器

本文对介质谐振器稳频GaAs FET谐波振荡器进行了研究;分析了场效应管中的非线性源产生二次谐波分量的情况,利用两种不同类型的场效应管设计制作了两个介质谐振器稳频场效应管谐波振荡器,在22GHz和18GHz分别得到了5.4mW和305mW的二次谐波功率。     

Ku波段高功率GaAs FET

报导Ｋｕ波段高功率ＧａＡｓＦＥＴ的制造技术，包括全离子注入、０．５μｍ自对准栅、高可靠欧姆接触、干法生长和刻蚀、背面通孔、内匹配和合成技术。器件由两个９．６ｍｍ栅宽的芯片组成，在１１．２～１１．７ＧＨｚ频带内，一分口增益压缩输出功率８Ｗ，增益６ｄＢ，功率附加效率２４％。     

NEDI'''' C Band GaAs FET Power Amplifiers

<正> Application Mainly used as the replacement of travelling wave tube in microwave communication system and a power amplifier in a satellite communication earth station. Features It employs GaAs MESFETs and a microstrip structure, with Iow power consumption and high reliability.     

一种S波段压控振荡器级联的注入锁定

针对压控振荡器(VCO)阵列注入锁定电路复杂和规模受限问题,提出一种S波段VCO阵列级联的新方法。通过在多个VCO之间加入耦合网络,将传统的单级注入改进为级联注入锁定,并通过网络级联方式实现级联级数的扩展。各级VCO之间通过耦合网络实现级联,首级VCO通过信号源参考信号进行锁定,次级VCO耦合前级VCO射频输出端信号进行锁定,每级均通过VCO电压调谐端进行注入。注入信号可锁定VCO输出频率,改善每级VCO输出相位噪声。通过级间耦合的形式,实现了一个微波源锁定多个VCO的输出。设计加工了2种级联注入VCO阵列,VCO的输出频率与注入信号频率相同,各级VCO相噪保持一致,当源相噪为-107.28 dBc/Hz时,各级VCO的输出相噪保持一致,为-105 dBc/Hz。该注入锁定方式电路简洁且成本低,未来有望应用在相控阵中。     

高速宽带频率综合源

<正>南京电子器件研究所模块电路事业部研制开发了一款全数字化的高速宽带频率综合源模块,该模块尺寸为152.4 mm×152.4 mm×29mm,如图1所示。频率范围2.0~22.0 GHz;频率步进10 kHz;输出功率≥10 dBm;跳频时间≤1μs,如图2所示。单边带相位噪声≤-95(dBc/Hz@1kHz),如图3所示。杂散≤-50 dBc,如图4所示。该模块可替代进口模块。     

Model-Free Adaptive Frequency Calibration for Voltage-Controlled Oscillators

The operating frequency accuracy of the local oscillators is critical for the overall system performance in the communication systems. However,the high-precision oscillators could be too expensive for civil applications. In this paper, we propose a model-free adaptive frequency calibration framework for a voltage-controlled crystal oscillator(VCO)equipped with a time to digital converter(TDC),which can significantly improve the frequency accuracy of the VCO thus calibrated. The idea is to utiliz...