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1.
The growth kinetics of the basal face and its edge of zinc single crystals grown from zinc vapours in the presence of argon at pressures 5 – 250 Torr has been investigated simultaneously. The alterations of the crystal size R and the length of the basal edge a with time t have been measured at constant temperature and supersaturation. It is shown that the R2(t) and a2(t) dependences change their initial shape into linear at one and the same moment. It is established that the transition from a kinetic to a diffusion regime can be determined both by the kinetic critical size Rk and by the kinetic critical size ak. It is found also that in the kinetic regime the lateral growth rate of the basal edge is higher than the normal growth rate of the {0001} face. During the growth in a diffusion regime the R2(t) and a2(t) curves of a given single crystal become parallel, due to the isotropic character of the transport processes of the material. The rate determining role of the diffusion in the parent phase on the growth of the basal face and its edge is demonstrated.  相似文献   

2.
The effect of diffusion in the vapour phase on the kinetics of growth of zinc single crystals in the presence of argon has been studied. The shift of the basal face in normal direction as a function of the time has been measured at constant temperature and supersaturation and argon pressures varying within the range 5–250 Torr as well as in vacuum 1 × 10−6 Torr. It has been established that the crystal size R changes with the time t following a linear and a parabolic law in the kinetic and the diffusion regimes, respectively. The kinetic critical size Rk for the transition from a kinetic to a diffusion regime has been experimentally obtained. A relatively good agreement is found between the experimentally established and theoretically calculated values of the critical size. The problems related to the transition of the basal faces of zinc single crystals from a kinetic to a diffusion growth mode is discussed.  相似文献   

3.
Crystallization of TGS at 52.0°C - above the transition point - has been studied in a wide range of supersaturation of the solution (σ = 0 to 10−2). The rates of growth of {110} and {001} faces were measured as a function of supersaturation at constant hydrodynamical conditions (Re = 3.4 · 10−3). Further, the influence of hydrodynamical conditions on the growth of {110} faces at constant supersaturation (σ = 4.2 · 10−3) was established. The parameters of the experimentally found dependences are determined on the basis of the surface-diffusion model of BURTON . CABRERA and FRANK . From these dependences follows that the growth rate of the {110} faces is already almost limited by the volume diffusion of TGS molecules towards the crystal surface, while in the case of {001} faces the surface diffusion mechanism of crystallization is clearly manifested. Dislocation densities in the crystals have been determined by means of etching technique. The number of dislocations increases with increasing supersaturation; hence, supersaturation of the solution together with the processes taking place in the regeneration zone surrounding the seed determine the number of dislocations in the crystal volume and thus the resulting structural perfection of single crystals. Investigation of the spontaneous redistribution of domains showed that the growth rate of TGS crystals influences the dielectric properties to much smaller extent than does chemical purity.  相似文献   

4.
氧化锌单晶的水热生长与结晶习性   总被引:1,自引:1,他引:0  
本文应用水热生长法,采用双温区高压反应釜,黄金内衬(φ35mm ×2mm),碱性溶液矿化剂,生长出了毫米级的透明氧化锌单晶,最大单晶可达2mm ×3mm ×6mm.所生长氧化锌晶体为纤锌矿型的六方晶体,晶体呈上部锥形的六棱柱体,{10(1-)1}、{10(1-)0}和{000(1-)}面有较大的显露平面.本文中从温差和填充度方面研究了实验条件对ZnO晶体的生长及其形貌的影响,使用黄金内衬前后的结果表明,用贵金属内衬可以有效阻止釜内壁杂质的进入,使晶体完整透明.  相似文献   

5.
The growth kinetics and mechanisms on the (001) and (100) faces of TGS crystals were investigated. A phase contrast microscope with a CCD camera was used to observe the growth of the crystal. We found the growth on the (001) and (100) faces at high supersaturation was mainly controlled by a BCF surface diffusion mechanism. The kinetic data for the (100) face were also fitted by the nucleation and layer growth model of two-dimension nucleation at high supersaturation. Some important growth parameters for TGS crystals, such as edge energy, activation energy, and so on, were estimated.  相似文献   

6.
The crystal growth rate under diffusion control is considered. Together with nutrient diffusion, the physi-sorption of an inert gas, which impedes the surface kinetics during vapour growth, is taken into consideration. In this way the size of the diffusion field surrounding vapour grown crystals was estimated. The relations obtained are checked with data for the growth of zinc single crystals in argon atmosphere. The appearance of shallow cavities on their basal faces is used as a morphological mark for growth under diffusion control. Besides, the microstructure of the inner edge of the macroscopically flat periphery, surrounding the shallow cavities is investigated experimentally, by means of SEM.  相似文献   

7.
The paper is aimed at the elucidation of the limits to which the faceted forms of KDP crystals preserve their stability and beyond which a skeletal growth from stagnant solutions takes place. In order to avoid the natural convections the experiments were performed in two-dimensional cells. On the basis of quantitative criteria, it has been shown that the kinetic regime of growth has been replaced by a diffusion one when the concentration on the crystal surface drops with respect to the bulk value with 0.1% to 0.2%. The critical size above which the KDP crystal no longer retains its polyhedral growth mode in a diffusion regime since a gross morphological defect in the form of a depression appears on its (010) face has been compared with the theoretical expressions derived by Cahn and Chernov.  相似文献   

8.
Studying a number of {101} faces of KDP and DKDP single crystals in the as-grown state we found in most cases one, rarely few, clearly stepped growth hillocks covering the whole face. The geometry of these growth hillocks was determined from photomicrographs; the step heights were measured with a profilometer. To prove our results we carried out X-ray topographic investigations and in-situ observations on KDP crystals. In addition we studied the as-grown faces of ADP and LiJO3 single crystals.  相似文献   

9.
The growth kinetics of TGS crystals was studied at high supersaturations under the Curie temperature. The kinetics data proved that the crystal growth was mainly controlled by BCF surface diffusion model. The continuous growth was fitted to the growth rate data of (110) face. Its edge energy, Jackson factor, activity energies, kinetic coefficients were calculated.  相似文献   

10.
ZnSe crystals were grown by sublimation in closed ampoules between 1335 K and 1365 K. The growth was observed in situ with a video camera after an abrupt change of the supersaturation. The crystals developed preferably {110} faces. Repeatedly a nucleus was formed in ortho-twin position on a small {111} face which truncated the corner of three adjacent {110} faces. The repeated twin formation led to a preferred growth into the relevant 〈111〉 direction. The twinning already occurred at a low supercooling of less than 1 K and accelerated the growth distinctly.  相似文献   

11.
Single crystals of stannic iodide (SnI4) havebeen grown using the controlled reaction between SnCl2 and KI by diffusion process in silica gel medium. Orange to reddish octahedral stannic iodide crystals up to 3–4 mm in size have been grown at room temperature. Optical studies have been made on the various surface structures of {111} faces of the asgrown crystals. On octahedral faces of these crystals, triangular-shaped hillocks with growth layers in the 〈110〉 directions have been observed. Occasionally, growth spirals on octahedral faces have also been reported. Close loops of growth fronts have been investigated and have been interpreted. It has been suggested that two-diemensional nucleation, spreading and pilling up of triangular growth layers is mainly responsible for the growth and occasionally the growth is due to screw dislocations. The implications are discussed.  相似文献   

12.
The effect of concentration of Mn(II) ions on the growth habit and the surface micromorphology of different as‐grown faces of ammonium oxalate monohydrate (AO) single crystals grown from aqueous solutions was studied at a constant temperature of 30 °C and predefined supersaturations up to 20%. It was observed that the growth habit and the surface morphology of the crystals strongly depend on the supersaturation used for growth and the impurity concentration in the solution. The experimental results were analysed in terms of connected nets determined from different projections of the structure of AO crystals. Analysis of the observations revealed that: (1) the directions of connected nets corresponding to basic growth units composed of single (NH4)2C2O4 · H2O molecules are in excellent agreement with the low‐index crystallographic directions of the orientations of growth layers, (2) all faces appearing in the growth morphology of AO crystals are F faces, and (3) the {001} face growing from pure aqueous solutions is essentially a kinetically rough face but the presence of Mn(II) impurity leads to their appearance in the morphology due to increase in the strength of bonds of the connected nets composing the surface graph.  相似文献   

13.
水热法合成Zn1-xMnxO稀磁半导体   总被引:3,自引:2,他引:1  
本文采用水热法在430℃,以3mol%.L-1KOH作矿化剂,填充度为35%,反应时间24h,合成了Zn1-xMnxO稀磁半导体晶体。所合成晶体具有ZnO纤锌矿结构,晶面显露正极面{0001}、负极面{0001}、菱面{1011}及负菱面{1011}晶体高度为5~30μm,径高比约为2:1。X荧光能谱(EDS)显示Mn原子百分浓度为2.6%(x=0.026)。晶体呈现低温铁磁性,居里温度50K。  相似文献   

14.
Optical studies have been made of the microstructures on the natural {100} and {111} faces of natural fluorite crystals. The protrudance of triangular elevations, growth pyramids, and natural etch pits have been observed on a large number of crystals. It is suggested that fluorite crystals grown by two-dimensional spreading and piling of growth layers parallel to {100} faces. The natural etch pits on {100} and {111} faces suggest that they have been produced as a result of a dissolution process in nature. The natural faces have been etched in the laboratory and it is established that the pits indicate the existence of linear defects in the crystals. The implications are discussed.  相似文献   

15.
配合物晶体MnHg(SCN)4中维系晶体结构的化学键是-Mn-NCS-配位键.从MnHg(SCN)4晶体中配位键的分布特点出发,对属于点群4的单形四方四面体、四方柱和平行双面进行分析,确定晶形中不能出现平行双面{001}、四方柱{110},可以出现的单形为四方四面体{101}和{011}及四方柱{100},而且四方四面体{101}和{011}单形最发育.由结构分析得出的晶形特点与实际晶体晶形特点相符.  相似文献   

16.
High quality AgGaSe2 single crystals with 20 mm in diameter and 55 mm in length have been grown by the modified Bridgman technique and the growth habits of AgGaSe2 single crystals have been investigated in detail. It is found that the shape of the growth ampoule affects greatly the nucleation and the growth of AgGaSe2 single crystal. A new cleavage face (101) and the natural faces are observed in the as-grown crystals. For some cases, the growing direction is normal to the (316) face.  相似文献   

17.
The growth kinetics and elementary growth processes on the surface of NH4Cl:Mn2+ heterogeneous crystals formed in the NH4Cl-MnCl2-H2O-CONH3 system are experimentally studied. It is found that a change in the composition of complexes in an NH4Cl crystal from Mn(NH4)2Cl4 · 2H2O to MnCl2 · 2CONH3 leads to the occurrence of a local maximum in the kinetic curve and a change in the shape of dislocation growth centers from flat to conical. The growth kinetics of {100} faces of heterogeneous NH4Cl:Mn2+ crystals is described within the Bliznakov model using the Fowler-Guggenheim adsorption isotherm, which takes into account the lateral interaction of adsorbed particles.  相似文献   

18.
快速生长KDP晶体表面的光学显微实时观察   总被引:1,自引:0,他引:1       下载免费PDF全文
设计了一套溶液降温法晶体生长显微实时观察装置,对快速生长KDP晶体{101}和{100}表面形貌的演化过程进行了实时观测分析.测量了晶体表面生长层切向生长速度随溶液过饱和度的变化曲线,并利用台阶生长动力学方程计算了相关动力学参数.进行了Fe3+掺杂实验,结果表明Fe3+的存在会影响到不同晶面上生长层的动力学系数,从而改变KDP晶体表面生长层的切向生长速度.  相似文献   

19.
Etching behaviour of {101} habit faces of natural mesolite crystals is reported. Rectangular, truncated and elliptical etch pits are illustrated, and mechanism of their formation is assessed. Factors influencing kinetics of etching are discussed. From Arrhenius plots activation energy and pre-exponential factor are computed and reported.  相似文献   

20.
Growth kinetics of zinc tris(thiourea) sulphate (ZTS) single crystals was imaged in two different growth geometries using laser shadowgraphy technique. Growth rates of the {010} and {001} faces were computed as a function of supersaturation. The time evolution of polar morphology of ZTS crystal based on the growth rates is presented. Except (00 ) face, all the other three faces are found to have a dead zone resulting in large induction period of growth. The anisotropy in the growth rates of the (001) and (00 ) faces was very high, resulting in polar morphology. Different chemical environments on two sides of the (001) slice are suggested as the possible cause for the polar morphology of the crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

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