Mössbauer study of martensitic transformation in Xe ion-irradiated type 304 austenitic stainless steel

Foil specimens of type 304 stainless steel have been irradiated with Xe⁺ ions in the range of 100–400 keV and 1×10²⁰–1×10²¹ ions/m² to elucidate the dynamics of the ion-induced martensitic phase transformation in stainless steel. It has been clearly shown by depth selective conversion electron Mössbauer spectroscopy (DCEMS) that the ion-induced martensitic phase in type 304 stainless steel has grown from the surface to a depth dependent both on the ion energy and the fluence of the Xe⁺ ions. Especially, we observed by means of DCEMS that the extension of the martensitic phase into the interior of stainless steel has been induced with increasing ion energy. It is concluded from these results that the depth distribution of the ion-induced martensitic phase is stress-induced by the formation of the highly pressurized Xe⁺ inclusion in type 304 stainless steel.     

Experimental preparation of the initial state of Xe+-N laser-induced collisional charge transfer system: Multi-photon resonant ionization of xenon

A novel one-color Xe⁺-N laser induced collisional charge transfer system is proposed, and preparation of the initial state of the system, i.e., Xe⁺ is experimentally implemented through resonance enhanced multi-photon ionization (REMPI) by ～440 nm dye laser. The REMPI of Xe is experimentally investigated through time-of-flight (TOF) mass spectrometry and the intensity dependence of Xe⁺ is obtained, aiming at the preparation of Xe⁺. The resonant ionization spectra of Xe at ～440 nm under several different conditions are measured, showing the impacts of mode purification and source pressure on the resonant ionization spectrum. The results indicate the feasibility of preparing the initial state of the Xe⁺-N system by ～440 nm multi-photon resonant ionization, which prepares for a further experiment of laser-induced collisional charge transfer.     

Lifetime measurements of metastable states in CRYRING

Collinear ion beam laser spectroscopy has been utilized in the ion storage ring CRYRING in order to measure lifetimes of metastable states in singly charged ions. The laser light has been used for selective probing of the population decay of individual fine structure or hyperfine structure states. With the use of a mechanical shutter, time resolved studies could be performed with millisecond resolution. In another experiment, the cw laser light was used to optically pump stored ions from the ground state into a specific metastable state. With most of the stored ions in the metastable state, direct observation of the decay of the forbidden transition from the metastable state to the ground state could be observed passively. Measurements of metastable lifetimes in Ca⁺, Sr⁺, Xe⁺ and Eu⁺ will be discussed. This revised version was published online in August 2006 with corrections to the Cover Date.     

Independent electron theory of multiple ionization of xenon by intense laser pulses

The intensity dependence of the multiphoton ionization spectra of Xe atoms has been investigated with an improved accuracy and well-controlled laser parameters. In particular, we have examined the ionization rates for X³⁺, X²⁻, X⁺ as functions of the laser intensity and the pressure in the target chamber. The apparatus used for these measurements is characterized by a high-energy resolution (better than 200 meV) and a completely digital acquisition system. The time-of-flight spectra clearly show the contributions of the different isotopes present in Xe gas. The laser pulses have been characterized with great accuracy by monitoring the energy, pulse width and divergence shot by shot. The ionization rates of the different ions have been used for testing the basic assumption of the Geltman theory of multiple ionization based on the single electron ionization model. We have found that for the small intensity range investigated the quantity (dXe ⁺/dI)·(dXe ³⁺/dI)/(dXe ²⁺/dI)² appears to be quite close to the value 0.5 predicted by this model.     

Local magnetic order in silicon implanted with high-energy ions

A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr⁺ and Xe⁺ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and 3.4, the hysteresis of the resonance magnetic field values of these lines, the anisotropy characteristic of ferromagnets, and the broadening. The ordering effect is retained after the annealing of samples at temperatures of no higher than 1270 K.     

Strong Enhancement of Electron–Ion Recombination Owing to Free–Bound and Bound–Bound Resonance Transitions

The effect of free–bound and bound–bound resonance nonadiabatic transitions of an electron on electron–ion recombination rates in the plasma of a Ne/Xe and Ar/Xe inert gas mixture has been studied. A kinetic model of recombination has been proposed including energy relaxation in collisions with electrons, resonant electron capture to Rydberg states through three-body collisions of Xe⁺ ions with Ne or Ar atoms and dissociative recombination of NeXe⁺ or ArXe⁺ ions, and n → n' resonance transitions. It has been shown that effective resonance processes occurring in quasimolecular systems sharply increase both the recombination coefficient and the effect of collisions with neutral particles even at quite high degrees of ionization of the plasma.     

Combined field ion microscopy and transmission electron microscopy of heavy ion damage in tungsten

Abstract

A field ion microscopy (FIM) and transmission electron microscopy (TEM) investigation of radiation damage in tungsten after heavy ion bombardment has been carried out. Field ion specimens of tungsten were irradiated with 180–230 keV Xe⁺ ions. The irradiation doses were varied between 4 × 10¹¹ and 4 × 10¹² ions/cm². The irradiated specimens were examined in FIM. Experiments combining both TEM and FIM were performed in order to compare the results obtainable by these two methods. The distribution of defects visible by TEM was inhomogeneous. The influence of the imaging field in FIM on the defects visible in TEM is discussed.     

Effect of the ionization energy loss density of high-energy bismuth,krypton, and xenon ions on the development of hydrogen blisters in silicon

Radiation-induced athermal hydrogen removal from single-crystal silicon subjected to irradiation by high-energy heavy Bi⁺ (E = 710 MeV), Kr⁺ (E = 85 and 250 MeV), and Xe⁺ (130 MeV) ions is detected experimentally. The decrease in the hydrogen concentration depends on the specific ionization energy losses of high-energy heavy ions. At high specific ionization losses of Bi⁺ ions with E = 710 MeV (22.5 keV/nm), the hydrogen concentration decreases to a level at which blisters cannot be observed in an optical or electron microscope (which is likely to be 1 at % hydrogen at the peak of the calculated hydrogen concentration profile). At medium specific ionization losses of Xe⁺ ions with E = 130 MeV (12.5 keV/nm) and Kr⁺ ions with E = 250 and 85 MeV (9.5 and 8.5 keV/nm, respectively), the hydrogen concentration decreases to a level that does not affect blister formation but determines the blister failure (flaking) conditions.     

Cesium redeposition artifacts during low energy ToF-SIMS depth profiling

H-terminated Si samples were preloaded with Cs by performing ToF-SIMS depth profiles (250 eV Cs⁺, 15 keV Ga⁺) until the steady state was reached both with and without a bias of +40 V applied to the ion extraction electrode. Xe⁺ depth profiles (350 eV Xe⁺, 15 keV Ga⁺) were obtained inside and around the Cs craters with and without applying the 40 V bias. The results indicate that the maximum of the Cs⁺ signal of the Xe⁺ depth profiles shifts to the surface if no bias is applied, either during the Cs⁺ sputtering or during the Xe⁺ sputtering (i.e., the profiles are broadest with both biases (Cs⁺ and Xe⁺) on and narrowest and closest to the surface if both biases are off). This effect can be explained by the electric field, caused by the bias, deflecting the sputtered low energy Cs⁺ ions back to the surface.     

Sputtering experiments with silver single crystals and the channeling phenomena

Sputtering yields of monocrystalline silver under irradiation with 7-30 keV Ar⁺, Kr⁺ and Xe⁺ ions, not reported earlier, have been determined. The yield has been found to depend strongly on the orientation of the crystal and mass of the impinging ion. Onderdelinden's model based on Lindhard's theory of Channeling is found to describe satisfactorily, the observed orientation and ion-mass dependence of the yields for the ions of energy ～10 keV or above. The role of the barrier potential approximated in the model in predicting the experimental results is discussed.     

Highly charged ion Coulomb crystallization in mixed strongly coupled plasmas

The investigation of highly charged ion Coulomb crystallization in mixed strongly coupled plasmas is of interest in many areas: white dwarf astrophysical plasmas are believed to have very similar thermodynamic properties, cold highly charged ions can be used as an object for high precision laser spectroscopy of fine and hyperfine transitions in the visible due to the absence of Doppler broadening and, an entirely new area of research is the potential application to highly charged ion based quantum computing schemes. We report the formation of such plasmas in a cryogenic Penning trap. These plasmas consisting of many species including Be⁺ and Xe⁴⁴⁺ or Be⁺ and Xe¹⁵⁺ ions, are formed at a temperature of less than 4 K. The temperatures were obtained by applying a laser based sympathetic cooling scheme. The determination of the temperature and density from the laser resonance width and the fluorescence imaging of the Be⁺ clouds, respectively, yields a Coulomb coupling constant for the centrifugally separated Xe plasma high enough for crystallization. A molecular dynamics code, developed just for this purpose, was run to clarify the understanding of these plasmas and it was possible to show consistency between experiment and simulation. This revised version was published online in August 2006 with corrections to the Cover Date.     

Xenon nano-beams for materials research

The advantage of focused Xe⁺ beams over other rare gas species have been investigated [Zhukov, V.; Kalbitzer, S. Russ. Microelectron. 2011, 40 (1), 17–24]. In particular, the higher operation temperature of a super-tip gas field ion source for xenon ions is one outstanding technical feature. The properties of focused Xe⁺ beams are estimated with special reference to optimised ion-optical transport systems. Applications to both ion beam materials modification and ion beam materials analysis are outlined.     

MeV重离子在固体靶中的平均投影射程计算

根据Biersack角扩散模型,建立了计算MeV重离子在固体靶中的平均投影射程的方法。与新近发表的1.0MeV的In⁺,Xe⁺,Ta⁺和1.0—2.0MeV的Pb⁺在Si中的平均投影射程实验数据相比,本文计算值与实验值的最大偏离为8％,而Monte-Carlo(TRIM′86)和PRAL的计算值与实验值的最大偏离分别为23％和22％。这表明本文的计算在预言1.0—2.0MeV的重离子(In⁺,Xe 关键词：     

Photorecombination of Ar-like gallium and germanium ions

The most up-to-date photorecombination spectrum of Ga¹³⁺ and Ge¹⁴⁺ has been re-assessed with direct large-scale relativistic atomic structure calculations. The new temperature-dependent dielectronic recombination rate coefficients are presented in a form convenient for astrophysical plasma modeling, summarizing the importance of different multi-electron intra-shell core excitations in the target ions. Obtained results are expected to facilitate a more accurate determination of the ionization-recombination balance of multiply-charged gallium and germanium ions and to improve the diagnosis of the radiative energy loss rates from low-density high-temperature plasmas.     

Charge composition of a cluster plasma upon irradiation of large atomic clusters by the field of a superatomic femtosecond laser pulse

A theory is developed for calculating the charge composition of a cluster plasma produced upon irradiation of large atomic clusters by the field of a superatomic femtosecond laser pulse. The theory is based on the overbarrier process of a successive multiple internal ionization of atomic ions inside a cluster accompanied by the external field ionization. Collision ionization is also taken into account in the calculations. The theory is illustrated by the example of a cluster consisting of 10⁶ xenon atoms irradiated by a 50-fs laser pulse with a peak intensity of 2×10¹⁸ W/cm². In this case, the Xe²⁶⁺ ions dominate. The amounts of atomic xenon ions with multiplicity up to 31 are calculated.     

Xe2Cl fluorescence and absorption in self-sustained discharge XeCl lasers

Fluorescence at 490 nm from the triatomic excimer Xe₂Cl^* has been investigated to determine the 308 nm absorption due to this species in an x-ray preionized, self-sustained gas discharge XeCl laser. The dependence of Xe₂Cl^* density on laser intensity (at 308 nm), buffer gas and Xe and HCl partial pressures has been determined for discharges with a peak electrical power deposition of 2.5 GWl^–1. Xe₂Cl^* absorption is estimated to reach 0.6% cm^–1 under non-lasing conditions but decreases to a non-saturable 0.2% cm^–1 for intracavity laser intensity>1 MW cm^–2. XeCl^* and Xe₂Cl^* fluorescence intensities were found to be a similar for both helium and neon buffer gases but laser output was a factor of two greater with a neon buffer.     

Ion Energy Effects in Photographic Detection in Organic Mass Spectrometry

The relative response of emulsion (Ilford Q2) and evaporated AgBr (Ionomet) plates to a polyatomic (C₉H₂₀ ⁺) and a monoatomic (¹²⁹Xe⁺) ion has been studied as a function of ion energy. Data from the former are readily interpreted qualitatively and semi-quantitatively. Previously reported fragmentation numbers of impacting ions are corrected. Evidence is suggested to relate fragmentation number to a thermodynamic quantity.     

Carbon sputtering yield measurements at grazing incidence

In this investigation, carbon sputtering yields were measured experimentally at varying angles of incidence under Xe⁺ bombardment. The measurements were obtained by etching a coated quartz crystal microbalance (QCM) with a low energy ion beam. The material properties of the carbon targets were characterized with a scanning electron microscope (SEM) and Raman spectroscopy. C sputtering yields measured under Ar⁺ and Xe⁺ bombardment at normal incidence displayed satisfactory agreement with previously published data over an energy range of 200 eV-1 keV. For Xe⁺ ions, the dependence of the yields on angle of incidence θ was determined for 0° ≤ θ ≤ 80°. Over this range, an increase in C sputtering yield by a factor of 4.8 was observed, with the peak in yield occurring at 70°. This is a much higher variation compared to Xe⁺ → Mo yields under similar conditions, a difference that may be attributed to higher scattering of the incident particles transverse to the beam direction than in the case of Xe⁺ → C. In addition, the variation of the yields with θ was not strongly energy dependent. Trapping of Xe in the surface was observed, in contrast to observations using the QCM technique with metallic target materials. Finally, target surface roughness was characterized using atomic force microscope measurements to distinguish between the effects of local and overall angle of incidence of the target.     

The theoretical and experimental study of the ionization processes during the low energy ion sputtering

The process by which atoms are ionized as they are sputtered from a metal surface has been analyzed both theoretically and experimentally. In the theoretical part the expressions for ionization coefficient R⁺ of atoms having the ionization energy much larger than the metal work function have been derived using a molecular orbital method. The effect of the level crossing was estimated in an approximate way. In the experimental part the SIMS experiments on clean Ni and Al surfaces and on Ni surface covered with a submonolayer of adsorbed K, Na and Al are reported. It has been found and it is for the first time reported that the energy distribution of ions sputtered from a submonolayer of adatoms is independent of energy (200–2500 eV) and mass (Ar⁺ Xe⁺ of incident ions and depends only upon the adsorption energy of the adatom. The energy distribution of ions sputtered from bulk samples has been found dependent on the primary ion energy. The measurement of the absolute value of R⁺ has shown that there is a strong correlation between the number of the adatom valence d-electrons and the value of R⁺, the value of R⁺ being smaller for atoms with more d-electrons. These experimental data have been compared with the theoretical expressions and the important role of the mechanism which takes into account the bending of the adatom energy level has been assessed.     

Heavy-ion irradiations of Fe and Fe–Cr model alloys Part 1: Damage evolution in thin-foils at lower doses

The evolution of radiation damage in Fe and Fe–Cr alloys under heavy-ion irradiation was investigated using transmission electron microscopy. Thin foils were irradiated with 100 or 150 keV Fe⁺ and Xe⁺ ions at room temperature (RT) and 300°C. Dynamic observations followed the evolution of damage and the early stages in damage development are reported. Small (2–5 nm) dislocation loops first appeared at doses between 10¹⁶ and 10¹⁷ ions m^?2 in all materials. Loop number densities depended strongly on the foil orientation in pure Fe but not in Fe–Cr alloys. Number densities did not depend strongly on Cr content. For a given material, defect yields were higher for Xe⁺ ions than for Fe⁺ ions, and were higher at RT than at 300°C. Loops with both ?100? and ½?111? Burgers vectors were identified. The proportion of ?100? loops was larger, especially in pure Fe. Dynamic observations showed that: the contrast of some new loops developed over intervals as long as 0.2 s; hopping of ½?111? loops was induced by the ion and electron beams and was pronounced in ultra-pure iron; and many loops were lost during and after ion irradiation by glide to the foil surface. The number of loops retained was strongly dependent on the foil orientation in Fe, but less so in Fe–Cr alloys. This is due to lower loop mobility in Fe–Cr alloys, probably due to pinning by Cr atoms. Reduced loop loss probably explains the higher loop number densities in Fe–Cr alloys compared with pure Fe.