MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法     

脉冲激光沉积法制备的Ni1-xFexO稀磁半导体的结构和磁性研究

利用脉冲激光沉积方法制备出了具有室温铁磁性的Ni_1-xFe_xO(x=0.02,0.05)稀磁半导体.X射线衍射(XRD)结果表明Ni_1-xFe_xO的晶体结构为NaCl结构,并且在Fe含量较高的Ni_0.95Fe_0.05O中出现了少量的α-Fe₂O₃物相.X射线吸收近 关键词： 1-xFe_xO')" href="#">Ni_1-xFe_xO XANES 脉冲激光沉积方法     

Pb1－xMnxSe薄膜的光学特性

采用分子束外延的方法在BaF₂(111)衬底上制备出了高质量的Pb_1-xMn_xSe(0≤x≤0.0681)薄膜.X射线衍射结果表明，Pb₁-xMn_xSe薄膜为立方相NaCl型结构，没有观察到MnSe相分离现象，薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小，Mn含量由Vegard公式得到.通 关键词： 1-xMn_xSe外延薄膜')" href="#">Pb_1-xMn_xSe外延薄膜 透射光谱 带隙 折射率     

多晶Mn1-xCux(0.1≤x≤0.3)合金的磁诱发应变

采用X射线衍射分析、显微形貌观察、差示扫描量热法、标准电阻应变计法等实验方法,研究了室温下多晶Mn_1-xCu_x(0.1≤x≤0.3,原子分数)合金在低磁场中的磁诱发应变性能.结果表明,Mn_1-xCu_x合金经过长时间的固溶处理,在冷却过程中会出现fcc(γ)→fct(γ’)马氏体相变,形成(γ+γ 关键词： 磁诱发应变 MnCu合金 马氏体相变     

Tb2AlFe16-xMnx化合物的结构、磁性及正电子湮没谱研究

通过X射线衍射、磁测量及正电子湮没谱等手段研究了Tb₂AlFe_16-xMn_x（x=1—8）化合物的结构和磁性.X射线衍射研究结果表明Tb₂AlFe_16-xMn_x化合物具有六角相的Th₂Ni₁₇型结构.室温下的正电子湮没实验研究表明,Mn对Fe的替代导致化合物中的铁磁相互作用减弱,并且化合物中存在着较强烈的磁弹耦合效应.磁测量研究结果表明,Mn的替代导致Tb₂AlFe_16-xMn_x化合物的居里温度及自发磁化强度急剧下降. 关键词： 2AlFe_16-xMn_x化合物')" href="#">Tb₂AlFe_16-xMn_x化合物 磁弹耦合效应 居里温度     

Cu对Zn1－xFexO稀磁半导体磁性的影响

采用水热法，在温度430 ℃，填充度35%，矿化剂为3 mol·L^-1KOH，前驱物为添加适量的FeCl₂·6H₂O的Zn(OH)₂，反应时间24h，合成了Zn_1-xFe_xO和Zn_1-xFe_xO：Cu稀磁半导体晶体.当在Zn(OH)₂中添加一定量的FeCl₂·6H₂O为前驱物，水热反应产物为掺杂Fe的Zn_1-xFe_xO多种形态晶体混合物，其个体较大的晶体中的Fe原子百分比含量为0.49%—0.52%.采用超导量子干涉磁强计测量了材料的磁性，晶体的磁化强度随温度下降而减小.在前驱物中同时加入适量比例的Cu化合物，合成了共掺杂Cu的Zn_1-xFe_xO：Cu，和Zn_1-xFe_xO相比，其室温下的磁化强度有明显的提高，且在室温下具有铁磁性. 关键词： 氧化锌 水热 稀磁半导体 晶体     

退火对高Co含量Ti1-xCoxO2磁性半导体的影响

利用磁控溅射仪制备了高Co含量的Ti_1-xCo_xO₂磁性半导体样品,并对样品分别在200℃,300℃和400℃进行退火研究.使用透射电子显微镜(TEM)对退火前后样品的结构进行表征,并用X射线光电子能谱(XPS)对退火前后样品中Co元素的化学状态进行鉴定.结果表明高Co含量的Ti_1-xCo_xO₂磁性半导体处于一种亚稳状态,300℃以上的温度便使其结构与成分发生巨大变化.利用超导量子干涉磁强计(SQUID)测量退火前后样品的磁特性,结果表明样品的磁性有了明显的变化,这源于磁性产生的不同机理. 关键词： 磁性半导体 退火 磁性     

Ti1－xCrxO2±δ体系的相关系、晶体结构和磁性能研究

采用溶胶凝胶法制备了Ti_1-xCr_xO_2±δ体系系列样品.利用扫描电子显微镜(SEM)，X射线光电子能谱(XPS)，粉末X射线衍射分析(XRD)方法研究了Ti_1-xCr_xO_2±δ系列样品的颗粒尺寸、形貌、组分化学态、相关系和固溶区范围；并利用超导量子干涉磁强计对样品的磁性能进行了研究.采用Rietveld结构精修的方法研究了Cr的不同掺杂量对TiO₂晶体结构的影响，研究表明，1000℃烧结的样品的固溶区范围是x=0—0.03，为金红石单相；随着Cr掺杂量的增加，金红石相晶胞参数规律性地减小；当x>0.03，为金红石相和CrO₂相两相共存.综合XRD和磁性测量结果，500℃烧结的样品的固溶区范围是x=0—0.02，为锐钛矿单相；随着Cr掺杂量的增加，锐钛矿相晶胞参数规律性地减小；当x≥0.04，为锐钛矿相和绿铬矿相(Cr₂O₃)两相共存.XPS实验结果表明，500℃和1000℃退火的样品中Cr都是以Cr⁺³和Cr⁺⁶两种化学态存在，1000℃烧结的样品中可能有更多的Cr³⁺转化为Cr⁶⁺.根据M-H和M-T曲线的测试结果发现，本文500℃烧结的Ti_1-xCr_xO_2±δ体系样品当x=0—0.02时，为室温铁磁性.当x≥0.04时，由铁磁相和顺磁相所组成，在低温下有较强的铁磁性；室温下主要是顺磁相，铁磁相只占据很小的体积分数. 关键词： 1-xCr_xO_2±δ体系')" href="#">Ti_1-xCr_xO_2±δ体系 相关系 固溶区 磁性能     

赝二元固溶体TbGa1-xGex(0≤x≤0.4)的结构与磁性

采用电弧熔炼法在高纯氩气保护下合成了一系列TbGa_1-xGe_x(0≤x≤0.4)样品. X射线粉末衍射数据表明,样品均为正交晶系的CrB型结构,空间群为Cmcm. TbGa_1-xGe_x化合物的晶格常数随Ge含量的增加而线性减小,TbGa和TbGe赝二元系在0≤x≤0.4范围内形成固溶体. 化合物的顺磁居里温度以及有效磁矩由热磁测量结果确定. 相变温度由交流磁化率的测量获得. 随Ge含量的增加,化合物的相变温度单调下降. 变温X射线粉末衍射实验表明,x=0.2和0.3的样品在110—273K范围内无结构相变. 关键词： TbGa-TbGe 赝二元系 CrB结构 居里温度 磁化强度     

Ferromagnetism in MnxGe1−x films prepared by magnetron sputtering

Mn_xGe_1−x thin films were prepared by magnetron sputtering with a substrate temperature of 673 K and subsequently annealed at 873 K. The X-ray diffraction (XRD) measurements showed that all samples had a single Ge cubic structure. No films showed clear magnetic domain structure under a magnetic force microscope (MFM). Atom force microscope (AFM) measurements showed that the films had an uniform particle size distribution, and a columnar growth pattern. X-ray photoelectron spectroscopy (XPS) measurements indicated that the valences of both Mn and Ge atoms increase with the Mn concentration. The resistance decreased with increasing temperature, suggesting that the films were typical semiconductors. Magnetic measurements carried out using a Physical Property Measurement System (PPMS) showed that all samples exhibited ferromagnetism at room temperature. There was a small concentration of Mn₁₁Ge₈ in the films, but the ferromagnetism was mainly induced by Mn substitution for Ge site.     

Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C

We report on the structural, magnetic and electronic transport properties of thin Mn_xGe_1−x films grown at 350 °C. Isolated Mn₅Ge₃ nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a Mn_xGe_1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03.     

MnxGe1−x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry

Mn_0.06Ge_0.94 samples have been grown by molecular-beam epitaxy on Ge(0 0 1)2 × 1. High-resolution transmission electron microscopy shows the coexistence of an ordered diluted Mn_0.06Ge_0.94 film and of nanoscopic crystallites, which were identified as Mn₅Ge₃ by electron diffraction. The magnetic properties of the Mn_0.06Ge_0.94 samples show a superposition of a paramagnetic behavior, due to the interaction of Mn atoms diluted in the Ge host, and a ferromagnetic behavior attributed to the Mn₅Ge₃ crystallites dispersed into the films. The Mn L_2,3 X-ray absorption spectra of the Mn_0.06Ge_0.94 films exhibit a lineshape typical of metallic Mn, with considerably reduced multiplet structure.     

Structural and magnetic properties of Si1−xGex thin films implanted with Fe ions

A series of Si_1?xGe_x (x = 1, 0.848, 0.591, 0.382, 0.209, 0.064, 0) thin films prepared by ion beam sputtering were implanted with Fe ions to different doses using the metal vapor vacuum arc technique. X-ray absorption fine structure (XAFS) was used to characterize the local microstructure around the Fe atoms in Fe-doped Si_1?xGe_x samples. Structural analysis showed that for annealed samples of Ge-rich thin films (including pure Ge) implanted with low doses of Fe ions, almost all the Fe ions substituted at Ge sites. However, an anti-ferromagnetic Fe₆Ge₅ impurity phase existed in the annealed samples implanted with high doses of Fe. It was also found that the solubility of Fe ions was highest in pure Ge films and that with increasing Si concentration, the solubility decreased. Magnetic analysis showed that for the as-implanted and annealed samples of Ge-rich thin films implanted with Fe ions, room-temperature ferromagnetism was strongest in the pure Ge series of samples and that as the Ge concentration decreased, the ferromagnetism at room temperature weakened. In addition, annealing could increase the number of Fe ions at substitution sites, which resulted in the observed increase in the saturated magnetization after annealing. Experiment and theoretical analysis showed that the ferromagnetism of Fe-doped Ge-rich Si_1?xGe_x thin films samples originated from the s, p–d exchange interactions between the Si_1?xGe_x matrix and those Fe ions which substituted at Ge sites and that the ferromagnetism was mediated by carriers.     

Mn掺杂SiC磁性薄膜的结构表征

利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)和X射线吸收近边结构谱(XANES)等技术研究了在950 ℃条件下Si(111)衬底上共蒸发分子束外延方法制备的Mn掺杂SiC磁性薄膜的结构特征.RHEED结果表明,生长的Mn掺杂SiC薄膜为立方结构.XRD和XANES结果表明,在Mn掺杂量为0.5％和18%的样品中,Mn原子均是与SiC半导体介质中的Si原子反应生成镶嵌在SiC基体中的Mn₄Si₇化合物颗粒,并未观察到在SiC晶格中有替代式或间隙式的M     

Phase transformations in the Mn-Ge system and in Ge x Mn1 ? x diluted semiconductors

Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn₅Ge₃ phase is formed first on the Ge/Mn interface after annealing at ??120°C. The further increase in the annealing temperature to 300°C leads to the beginning of the synthesis of the Mn₁₁Ge₈ phase, which becomes dominating at 400°C. The existence of new structural transitions in the Mn-Ge system in the region of ??120 and ??300°C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn₅Ge₃ and Mn₁₁Ge₈ phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge _x Mn_{1 ? x} (x > 0.95) diluted semiconductors has been substantiated.     

GeSn合金的晶格常数对Vegard定律的偏离

在Si (001)衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge_1-xSn_x合金薄膜. 在Si (001)衬底上直接生长了x分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge_1-xSn_x样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge_1-xSn_x合金的组分 与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 Å.     

Growth and properties of magnetron cosputtering grown MnxGe1−x on Si (001)

We have grown Mn_xGe_1−x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn_0.06Ge_0.94 film while new phase appears in the Mn_0.1Ge_0.9 film. Nanocrystals are formed in the Mn_0.06Ge_0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn_0.06Ge_0.94 film is p-type semiconductor and hole carrier concentration is 6.07×10¹⁹ cm⁻³ while the Mn_xGe_1−x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn_0.06Ge_0.94 film is ferromagnetic at room temperature.     

Structure of precipitates and orientation relationships in Al,Ge, Mo-doped higher manganese silicide crystals

Abstract

The structure of Al, Ge, Mo-doped Higher Manganese Silicide (HMS) crystals with the general formulas Mn(Si_0.99Ge_0.01)_1.75, Mn(Si_0.995Ge_0.005)_1.75 and (Mn_0.98Mo_0.02)[(Si_0.98Ge_0.02)_1.75]_0.99Al_0.01 was investigated by scanning and transmission electron microscopy, electron diffraction and X-ray energy dispersive spectrometry in a wide scale range from a few mm to several Å. Several secondary phases were identified in the Mn₄Si₇ matrix: Ge_1?xSi_x (0.1 < x < 0.9) solid solution precipitates with Ge concentration ranging from 5 at. % up to 93 at.%, MoSi₂ platelets, MnSi and Mn₅Si₃ precipitates. Their morphology, structure and crystallographic relationships with the HMS matrix were determined. Mostly local strains in the matrix and precipitates due to lattice misfits at interfaces derived from crystallographic relationships were found two orders of magnitude higher than deformation induced by thermal expansion mismatch. Only a few exceptions of specific relationships were found when the lattice misfit and thermal mismatch have close values. The largest misfit of about 22% was observed between MnSi and Mn₄Si₇ what led to big and numerous cracks in crystals. Therefore, doping can improve the material performance (1) by preventing the formation of MnSi precipitates with metallic properties and (2) by reduction of cracking and crack propagation because of larger MnSi /Mn₄Si₇ lattice misfit compared to Ge_1?xSi_x /Mn₄Si₇ or MoSi₂/Mn₄Si₇ misfits.