Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques

Charging and discharging phenomena from silicon nanocrystals have been studied by means of capacitance–voltage characteristics on P-type metal-oxide-semiconductor (P-MOS) capacitors with embedded self-assembled silicon quantum dots. The dots have a floating gate behavior as shown by the hysteresis onC –V curves. The Si-dots are charged or discharged by direct tunneling of carriers through a 3 nm thick oxide. The nanocrystals could be charged by electrons or holes, depending on the charging bias conditions. The discharge is studied by constant bias method and shows a logarithmic variation with time. Retention times higher than several hours are observed. A simple model is developed in order to evaluate the electric field within the tunneling oxide layer. Then, complete simulations are done for the different discharge paths. The barrier heights are extracted from the discharge data and possible confinement effects are discussed. The results confirm the high potentiality of silicon nanocrystal-floating gates for memory applications.     

Quantum simulation of the t–J model

Computer simulation of a many-particle quantum system is bound to reach the inevitable limits of its ability as the system size increases. The primary reason for this is that the memory size used in a classical simulator grows polynomially whereas the Hilbert space of the quantum system does so exponentially. Replacing the classical simulator by a quantum simulator would be an effective method of surmounting this obstacle. The prevailing techniques for simulating quantum systems on a quantum computer have been developed for purposes of computing numerical algorithms designed to obtain approximate physical quantities of interest. The method suggested here requires no numerical algorithms; it is a direct isomorphic translation between a quantum simulator and the quantum system to be simulated. In the quantum simulator, physical parameters of the system, which are the fixed parameters of the simulated quantum system, are under the control of the experimenter. A method of simulating a model for high-temperature superconducting oxides, the t–J model, by optical control, as an example of such a quantum simulation, is presented.     

Vortex pinning properties of –Ba–Cu–O and –Ba–Cu–O superconducting bulks

We have studied the effect of a small amount of Y-site substitution by La or Pr ions on the vortex pinning in the Y–Ba–Cu–O system. (Y_1-xLa_x)–Ba–Cu–O and (Y_1-xPr_x)–Ba–Cu–O bulks were fabricated by the melt-textured growth, in which x was varied from 0 to 0.01. The critical current density J_c at 77 K is improved in magnetic fields parallel to the c-axis above 2–4.5 T and the corresponding irreversibility field, H_irr, shifts to the higher value in both bulks.     

A direct measurement of g-factors in II–VI and III–V core–shell nanocrystals

This study describes a direct measurement of spectroscopic g-factors of photo-generated carriers in InP/ZnS and HgTe/Hg_xCd_1−xTe(S) core–shell nanocrystals. The g-factor of trapped electrons and their spin-lattice versus radiative relaxation ratio (T₁/τ) were measured by the use of continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The g-factors of excitons and donor–hole pairs were derived by the use of field-induced circular-polarized photoluminescence (CP-PL) spectroscopy. The combined information enabled to determine the g-factors of the individual band-edge electrons and holes. The results suggested an increase of the g-factor of the exciton and conduction electron with a decrease of the nanocrystal size.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

The experimental and theoretical investigation of vibration spectra in ferroelectric semiconductor SbSBrxI1−x crystals

The vapor grown SbSBr_xI_1−x (x=0.1; 0.5; 0.9) crystals with clear mirror surfaces have been used for infrared reflection measurements with Fourier spectrometer. The vibration frequencies along c(z)-axis have been derived from Kramers–Kroning and optical parameters fitting analysis of the experimental reflectivity spectra at T=300 K. The theoretical vibration spectra of SbSBr_xS_1−x (x=0.1; 0.5; 0.9) crystals in paraelectric phase (T=300 K) along c(z)-axis have been determined in quasiharmonic approximation by diagonalization of dynamical matrix. The theoretical vibration spectra of these crystals in a–b(x−y) plane have been determined in harmonic approximation. In this work we discuss the nature of anharmonism in SbSBr_xI_1−x crystals along the c(z)-axis.     

Structural, electronic, thermodynamic and optical properties of SrS1−xOx mixed crystals

The structural, electronic and thermodynamic properties of the SrS_1–xO_x ternary mixed crystals have been studied using the ab initio full potential linearized augmented plane wave (FP-LAPW) method within density functional theory. The effect of composition on lattice parameter, bulk modulus and band gap was investigated. The lattice constants from Vegard's law and the bulk modulus from linear concentration dependence were observed for the alloys. The microscopic origins of the gap bowing were explained by using the approach of Zunger and co-workers. The thermodynamic stability of these alloys was investigated by calculating the excess enthalpy of mixing ΔH_m as well as the phase diagram. In addition to FP-LAPW method, the composition dependence of the refractive index and the dielectric constant was studied by different models.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.     

Preparation and properties of composite ceramic coating containing Al2O3–ZrO2–Y2O3 on AZ91D magnesium alloy by plasma electrolytic oxidation

A composite ceramic coating containing Al₂O₃–ZrO₂–Y₂O₃ was successfully prepared on AZ91D magnesium alloy by plasma electrolytic oxidation (PEO) technique in an alkaline aluminate electrolyte. The morphology, elemental and phase composition, corrosion behavior and thermal stability of the uncoated and coated samples were studied by environmental scanning electron microscopy (ESEM), energy dispersive X-ray spectrometer (EDS), X-ray diffractometer (XRD), electrochemical corrosion test, high temperature oxidation test and thermal shock test. The results showed that the composite ceramic coating was composed of Al₂O₃, c-ZrO₂, t-ZrO₂, Y₂O₃ and some magnesium compounds, such as MgO, MgF₂ and MgAl₂O₄. After PEO treatment, the corrosion potential of AZ91D alloy was increased and the corrosion current density was significantly reduced. Besides, the coated magnesium alloys also showed excellent high temperature oxidation resistance and thermal shock resistance at 500 °C environment.     

Observation of γ-delayed 3α breakup of the 15.11 and 12.71 MeV states in C

The reactions at 4.9 MeV and at 8.5 MeV have been used to investigate the γ decay of states in ¹²C. By measuring the four-body final state in complete kinematics we are able to detect γ transitions indirectly. We find γ transitions from the 15.11 MeV state in ¹²C to the 12.71, 11.83, 10.3 and 7.65 MeV states followed by their breakup into three α particles. The relative γ-ray branching ratios obtained are (1.2±0.3), (0.32±0.12), (1.4±0.2) and (4.4±0.8)%, respectively, with the remaining (92.7±1.0)% of the γ decays going to the bound states. We obtain Γ_α/Γ=(2.8±1.2)% for the isospin-forbidden α decay of the 15.11 MeV state. From the 12.71 MeV state we find γ transitions to the 10.3 and 7.65 MeV states. The relative γ-ray branching ratios are and , respectively, with the remaining of the γ decays going to the bound states. Finally, we discuss the relation between the β decay of ¹²N and ¹²B to states in ¹²C and the γ decay of the 15.11 MeV analog in ¹²C to the same states.     

The 2D {P} Spin-Echo-Difference Constant-Time [C, H]-HMQC Experiment for Simultaneous Determination of JH3′P and JC4′P in C-Labeled Nucleic Acids and Their Protein Complexes

A two-dimensional {³¹P} spin-echo-difference constant-time [¹³C, ¹H]-HMQC experiment (2D {³¹P}-sedct-[¹³C, ¹H]-HMQC) is introduced for measurements of ³J_C4′P and ³J_H3′P scalar couplings in large ¹³C-labeled nucleic acids and in DNA–protein complexes. This experiment makes use of the fact that ¹H–¹³C multiple-quantum coherences in macromolecules relax more slowly than the corresponding ¹³C single-quantum coherences. ³J_C4′P and ³J_H3′P are related via Karplus-type functions with the phosphodiester torsion angles β and ε, respectively, and their experimental assessment therefore contributes to further improved quality of NMR solution structures. Data are presented for a uniformly ¹³C, ¹⁵N-labeled 14-base-pair DNA duplex, both free in solution and in a 17-kDa protein–DNA complex.