透明TiO2纳米管/FT0电极制备及表征

采用射频磁控溅射方法在透明导电玻璃(FTO)上沉积纯钛薄膜,室温条件下在H3PO4 HF电解液中通过恒压阳极氧化方法得到TiO2纳米管阵列,并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、UV-Vis透射光谱以及光电化学的方法对纳米管阵列进行了表征.研究表明,在电压为20V、氧化时间为50min时,钛薄膜转化为TiO2纳米管阵列,管长约为380nm,内径约为90nm,管壁约为15nm;再经过500℃空气热处理6h之后得到锐钛矿型的TiO2纳米管/FTO透明电极,在可见光区的平均透过率约为80%,TiO2禁带宽度为3.28eV,发生了蓝移,带尾扩展到2.6eV;此外,对结晶前后的复合电极分别在暗态和紫外光下进行线性扫描和瞬态光电流测试,结果表明,结晶的电极表现出更好的光电转换性能;施加阳极电压和紫外光照射都能够促进TiO2光生载流子有效分离,使电子迅速传至导电玻璃表面通过外电路形成光电流.     

透明TiO2纳米管/FTO电极制备及表征

采用射频磁控溅射方法在透明导电玻璃(FTO)上沉积纯钛薄膜, 室温条件下在H3PO4+HF电解液中通过恒压阳极氧化方法得到TiO2纳米管阵列, 并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、UV-Vis透射光谱以及光电化学的方法对纳米管阵列进行了表征. 研究表明, 在电压为20 V、氧化时间为50 min时, 钛薄膜转化为TiO2纳米管阵列, 管长约为380 nm, 内径约为90 nm, 管壁约为15 nm; 再经过500 ℃空气热处理6 h之后得到锐钛矿型的TiO2纳米管/FTO透明电极, 在可见光区的平均透过率约为80%, TiO2禁带宽度为3.28 eV, 发生了蓝移, 带尾扩展到2.6 eV; 此外, 对结晶前后的复合电极分别在暗态和紫外光下进行线性扫描和瞬态光电流测试, 结果表明, 结晶的电极表现出更好的光电转换性能; 施加阳极电压和紫外光照射都能够促进TiO2光生载流子有效分离,使电子迅速传至导电玻璃表面通过外电路形成光电流.     

V掺杂锐钛矿相TiO_2的光吸收特性

使用V2O5和乙醇作为V掺杂TiO2的滴加液,运用溶胶-凝胶方法制备了不同浓度的V掺杂锐钛矿相TiO2的薄膜样品.对这些样品进行了紫外-可见透射光谱实验,发现V掺杂锐钛矿相TiO2的光谱响应范围向可见光区域移动,掺杂浓度为1.0%(摩尔分数)时红移效果最明显.此外,运用第一性原理,对V掺杂锐钛矿相TiO2的电子结构进行了研究,并运用能带结构理论对实验现象进行了解释.研究中发现:在V掺杂锐钛矿相TiO2后,随着V浓度的增加,TiO2的禁带宽度逐渐减小,光谱响应范围扩大,能提高它的可见光响应;但是由于掺杂后价带与导带比较接近,容易形成新的空穴-电子复合中心,以及导带区域V3d轨道上电子与Ti3d轨道上的电子强关联作用也会降低电子的还原性,所以V浓度的增加会使TiO2的光催化性能降低.理论上计算出在V掺杂浓度为6.25%(摩尔分数)时,TiO2的光吸收边红移最大,与实验得到的变化趋势相吻合.     

直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性

通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、晶体结构、元素价态及吸收带边的影响.用瞬态光电流和循环伏安法考察了不同Mo含量ITO/Mo-TiO2电极的光电特性.结果表明:在TiO2薄膜中掺入的Mo以Mo6+和Mo5+两种价态存在;随着Mo掺杂量的增加,Mo-TiO2薄膜的晶粒尺寸逐渐减小,晶格畸变增大,吸收阈值显著红移;薄膜的禁带宽度先减小后增大,在Mo掺杂量为2.7%(n(Mo)/n(Ti))时禁带宽度最小;Mo掺杂量为0.9%的样品在氙灯下的光生电流最大,且随着所加阳极偏压的提高光生电流并未呈现出饱和的趋势.此后随着掺杂量的提高,薄膜的光生电流开始下降,当Mo掺杂量达到3.6%时,薄膜的光电流小于未掺杂的样品;说明适当浓度的Mo掺杂能够提高Mo-TiO2薄膜光电性能,光生电流最大可达未掺杂的2.4倍.     

TiO2介孔薄膜的制备及紫外光电响应性质

采用蒸发诱导自组装法制备了高度有序的TiO2介孔薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等分析手段对其进行了表征. 结果表明, 所得样品的孔径约为5 nm, 孔道规则, 且骨架为纯锐钛矿结构. 紫外-可见光谱(UV-Vis)的表征结果表明, 制备的TiO2介孔薄膜对波长小于380 nm的紫外线有很强的吸收. 对TiO2介孔薄膜的I-V(电流-电压)特性进行了表征, 发现加光后其I-V曲线由暗态时的肖特基特性转变为欧姆特性, 表明TiO2介孔薄膜对紫外光有很敏感的光电响应.     

甲酰胺对介孔N-TiO2微结构及光催化性能的影响

以钛酸四丁酯为前躯体,甲酰胺为氮源,采用溶胶凝胶法制备了具有可见光活性氮掺杂二氧化钛(N-TiO2)光催化剂.通过XPS、XRD、低温N2吸附.脱附和UV-Vis等表征,考察甲酰胺加入量对样品微结构和可见光活性的影响.当甲酰胺与钛酸四丁酯的物质的量的比为2、4、8、13时,制备的样品晶粒粒径在8～12 nm范围内,孔径在9～16咖范围内,孔隙率在54%～63%之间.甲酰胺与钛酸四丁酯的物质的量的比为13时,所制备样品具有较强的可见光吸收性能,其最大吸收边扩展到570 nm左右,禁带宽度减小至2.18 eV,比纯二氧化钛禁带宽度3.20 eV降低了1.02 eV.结果表明:随着甲酰胺加入量的增加,样品的晶粒粒径、孔径、孔隙率明显变大,禁带宽度减小.对甲基橙的室内自然光降解实验证明.氮掺杂二氧化钛具有良好的光催化活性,当甲酰胺与钛酸四丁酯的物质的量的比为13时,催化剂对甲基橙的降解率最高,为98.3%.     

等离子体修饰TiO2及其响应光谱红移

TiO2在光催化方面应用前景十分广阔,而阻碍其应用的是它的宽禁带,因此研究开发响应光谱红移的TiO2就成为当前光催化剂研究的重要课题.等离子体处理是修饰TiO2的一种有效方法,目前等离子体修饰TiO2及其响应光谱红移的研究取得了一定进展,等离子体修饰的TiO2表面生成了氧空穴,并形成了原子掺杂,减小了禁带宽度,使其响应光谱红移.本文综述了目前该领域的研究现状,并对今后的研究做了展望.     

等离子体修饰TiO2及其响应光谱红移

TiO2在光催化方面应用前景十分广阔,而阻碍其应用的是它的宽禁带,因此研究开发响应光谱红移的TiO2就成为当前光催化剂研究的重要课题.等离子体处理是修饰TiO2的一种有效方法,目前等离子体修饰TiO2及其响应光谱红移的研究取得了一定进展,等离子体修饰的TiO2表面生成了氧空穴,并形成了原子掺杂,减小了禁带宽度,使其响应光谱红移.本文综述了目前该领域的研究现状,并对今后的研究做了展望.     

掺Ti和未掺Ti的α-Fe_2O_3薄膜光电性质的研究

本文采用旋涂法制备了掺Ti和未掺Ti的Fe2O3薄膜,并对其薄膜的结构和光电特性进行了系统测试分析。XRD结果证实掺Ti和未掺Ti的薄膜均为α-Fe2O3。SEM测试表明α-Fe2O3薄膜微观结构为纳米线结构,具有沟壑结构,粒径长度约为150nm,掺杂Ti使薄膜更均匀致密,晶体颗粒更小,比表面积更大。紫外-可见光谱实验发现了掺杂Ti使薄膜产生"蓝移",禁带宽度大,验证了SEM测试结果。IPCE实验结果结果说明了掺杂Ti的α-Fe2O3薄膜的光电性能大大好于未掺杂的薄膜。     

阳极氧化TiN薄膜制备N掺杂纳米TiO2薄膜及其可见光活性

室温下通过电泳沉积(EPD)的方法在Ti片表面制备TiN薄膜, 然后对TiN薄膜进行阳极氧化得到N掺杂多孔纳米结构的TiO2薄膜. 利用X射线衍射(XRD), X射线光电子能谱(XPS), 扫描电子显微镜(SEM)及光电化学方法对得到的薄膜进行表征. XRD测试结果表明, 经过阳极氧化并在350 ℃空气气氛中退火1 h的薄膜中存在锐钛矿晶型的TiO2. XPS的结果表明, 样品中的N元素取代部分O, 且N的摩尔分数为0.95%. SEM显示, 经阳极氧化后薄膜表面出现多孔纳米结构. 光电化学测试结果显示, 阳极氧化提高了N掺杂TiO2薄膜在可见光下的光电响应. 经阳极氧化并热处理的薄膜在0 V电位及可见光照射下光电流密度为2.325 μA·cm-2, 而单纯热处理的薄膜在相同条件下光电流密度仅为0.475 μA·cm-2. 阳极氧化得到纳米多孔结构提高了N掺杂纳米TiO2薄膜的表面积, 从而对可见光的响应增大.     

Photoelectrochemical Properties of Sol-Gel Processed Ag-TiO2 Nanocomposite Thin Films

Ag-TiO₂ thin films were prepared with a sol-gel route, using titanium isopropoxide and silver nitrate as precursors, at 0, 0.03 and 0.06 Ag/Ti nominal atomic ratios. After drying at 80°C, the films were fired at 300°C, 500°C, and 600°C for 30 min and 5 h. Glancing angle X-ray diffraction (XRD) analysis and X-ray photoelectron spectroscopy (XPS), with depth profiling of the concentration, were used to study the films. XPS analysis showed the presence of C and N as impurities in the nanocomposite films. Their concentration decreased with increasing the firing temperature. Chemical state analysis showed that Ag was present in metallic state, except for the outer layer where it was present as Ag⁺. For the films prepared with a Agt/Ti concentration of 0.06, depth profiling measurements of the film fired at 300°C showed a strong Ag enrichment at the outer surface, while composition remained almost constant within the rest of the film, at Ag/Ti atomic ratio of 0.02. Two layers were found for the films heated to 500°C, where the Ag/Ti ratios were 0.015 near the surface and 0.03 near the substrate. The photoelectrochemical properties of Ag-TiO₂ were studied for thin films deposited on ITO substrates. Photocurrents of Ag-TiO₂ nanocomposite electrodes fired at 300°C were observed even at visible light, for wavelengths longer than 400 nm.     

Relationship Between Photocatalytic Activity and Structure of TiO2 Thin Film

TiO2 thin films with different crystalline structures were prepared by the CVD method. The relationship between photocatalytic activity of a TiO2 thin film and its crystalline type was investigated. These films were characterized by XRD and AFM. Their photocatalytic properties were tested by the degradation of NO2-. The results showed that the crystalline structures of TiO2 thin films are primary anatase and/or rutile when the preparation temperatures were less than 573 K and higher than 773 K respectively. When the preparation temperature was around 623 K, the structures of TiO2 thin films were mixed crystalline structure, which showed the highest catalytic activity. When the ratio of rutile to anatase in TiO2 thin films fell between 0.5 and 0.7, the highest catalytic activity for the degradation of NO2- was found.     

Determination of the cubic to hexagonal structure transition in the metastable system TiN-AlN

Structural transitions of metastable Ti_1–xAl_xN coatings on technically relevant substrates were determined as a function of the Ti/Al ratio. Ti_1–xAl_xN films with different Ti/Al ratios were deposited on high speed steel (HSS) substrates at substrate temperatures of 300?° and 500?°C by means of reactive magnetron sputtering ion plating (MSIP). A Ti/Al compound target was used as well as a cluster arrangement of one Ti and one Al target for comparison. The composition of the films was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). The analyses revealed that films deposited with Ti/Al ratios of 44/56 and 36/64 had grown in cubic NaCl structure, a film with a Ti/Al ratio of 32/68 was two-phase, and a Ti/Al ratio of 25/75 led to a hexagonal film in wurtzite structure. Only small differences of the lattice parameters could be observed in dependence of temperature: At 300?°C the lattice parameters of the cubic structure corresponded exactly to Vegard‘s law, whereas they slightly decreased in the films deposited at 500?°C. The application of a cluster arrangement instead of a compound target resulted in nearly the same lattice parameters and peak shapes.     

衬底温度对强流脉冲离子束烧蚀沉积类金刚石薄膜化学结构的影响

采用强流脉冲离子束(High-intensitypulsedionbeam,HIPIB)烧蚀技术在Si(100)基体上沉积类金刚石(Diamond-likecarbon,DLC)薄膜,衬底温度的变化范围为298～673K.利用Raman光谱和X射线光电子谱(XPS)对DLC薄膜的化学结合状态与衬底温度之间关系进行研究.薄膜XPS的C1s谱的解谱分析得出薄膜中含有sp³C(结合能为285.5eV)和sp²C(结合能为284.7eV)成分,根据解谱结果评价薄膜中sp³C含量.根据XPS分析可知,衬底温度低于473K时,sp³C的含量大约为40%左右;随着沉积薄膜时衬底温度的提高,sp³C的含量降低,由298K时的42.5%降到673K时的8.1%,从573K开始发生sp³C向sp²C转变.Raman光谱表明,随着衬底温度的提高,Raman谱中G峰的峰位靠近石墨峰位,G峰的半峰宽降低,D峰与G峰的强度比I_D/I_G增大,说明薄膜中的sp³C的含量随衬底温度增加而减少.     

Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant

Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N⁺:Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp² clusters. The α‐C:N⁺:Ti films present smoother surface and smaller particle size than for α‐C:N₂:Ti films. N ions facilitate the formation of N‐sp³C bonds in the α‐C:N⁺:Ti films, and α‐C:N⁺:Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N₂:Ti (10 Hz, 80 A) film.     

Sol-Gel Preparation and Characterization of Ag-TiO2 Nanocomposite Thin Films

Ag-TiO₂ thin films were prepared with a sol-gel route, using titanium isopropoxide and silver nitrate as precursors, at 0.03 and 0.06 Ag/Ti nominal atomic ratios. After drying at 80°C, the films were fired at 300°C and 500°C for 30 min. The films were analysed by X-ray diffraction (XRD) with glancing angle, and X-ray photoelectron spectroscopy (XPS), with depth profiling of the concentration. XPS analysis showed the presence of C and N as impurities in the nanocomposite films. Their concentration decreased with increasing the firing temperature. Chemical state analysis showed that Ag was present in metallic state, except for the very outer layer where it was present as Ag⁺. For the films prepared with a Ag/Ti concentration of 0.06, depth profiling measurements of the film fired at 300°C showed a strong Ag enrichment at the outer surface, while composition remained almost constant within the rest of the film, at 0.019. For the films heated to 500°C, two layers were found, where the Ag/Ti ratios were 0.015 near the surface and 0.026 near the substrate.     

纳米复合Sb_2O_3/TiO_2的光催化性能研究

采用溶胶-凝胶法制备复合纳米 Sb2O3/TiO2。 Sb2O3掺入浓度越大,催化剂中锐钛矿相含量越高,晶粒直径与颗粒直径越小,比表面积越大。在 380～ 460nm范围内, Sb2O3/TiO2的反射率则减弱,表明光吸收增强。 XPS分析表明：掺入 2％ Sb2O3,出现新的 Ti2p3/2峰,对应于 Ti3＋,占 9.13％;锑以 Sb3＋、 Sb5＋两种形式存在, Sb5＋占 84.42％、 Sb3＋占 17.58％。以亚甲基蓝溶液光催化降解为模型反应,掺入 2％、 5％ Sb2O3,亚甲基蓝溶液的光催化脱色降解一级动力学常数与总有机炭（ TOC）去除率增大。发射光谱证明： Sb2O3的最佳比例为 2％,当其比例大于 2％时,其电子空穴对的复合率升高,光催化活性下降。     

SILAR法制备化学计量CuInS_2薄膜

在室温下,以不同cCu/cIn的CuCl2和InCl3混合溶液作为阳离子前驱体,Na2S水溶液为硫源,利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS2薄膜。XRD结果表明,当cCu2 /cIn3 在1￣1.5范围内均可形成具有黄铜矿结构的CuInS2薄膜。SEM观察到随cCu2 /cIn3 的升高,薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当cCu2 /cIn3 =1.25时,CuInS2薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>104cm-1,禁带宽度Eg为1.45eV。     

A facile preparation of nanocrystalline Mo2C from graphite or carbon nanotubes

Nanocrystalline Mo₂C powders were successfully synthesized at 500 °C by reacting molybdenum chloride (MoCl₅) with C (graphite or carbon nanotube) in metallic sodium medium. X-ray powder diffractometer (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscope (XPS) and surface area analyzer (BET method) were used to characterize the samples. Experiments reveal that the carbon source used for the carbide synthesis has a great effect on the particle size and the surface area of the samples. When micro-sized graphite was used as C source the obtained nanocrystalline Mo₂C powder consists of particles of 30∼100 nm, with a surface area of 2.311 m²/g. When carbon nanotubes were used as C source, the as-synthesized Mo₂C sample is composed of particles of 20∼50 nm, with a surface area of 23.458 m²/g, which is an order of magnitude larger than that of the carbide prepared from the graphite.     

活性炭和石墨混合载体的Pt催化剂(Pt/CG)对乙醇氧化电催化活性的影响

用化学沉积法制备炭载Pt(Pt/C)和以活性炭与石墨作混合载体的Pt(Pt/CG)催化剂。实验结果表明,活性炭与石墨质量比影响Pt/CG催化剂对乙醇氧化的电催化活性。当活性炭与石墨的质量比为15∶1时,制得的Pt/CG催化剂对乙醇氧化的电催化活性最高。