染料分子吸附在正、负电性纳米银上的荧光增强及荧光猝灭现象

制备了两种不同表面电性的胶态纳米银 ,选取阴离子型染料分子荧光素钠、既有阴离子基团又有阳离子的染料分子罗丹明B ,研究其在两种纳米银表面的荧光增强及荧光猝灭现象 .当罗丹明B(RhB)分子分别吸附在这两种纳米银上时 ,对负电性纳米银 ,观察到荧光猝灭、荧光峰红移现象 ,且在分子的浓度适当时 ,加入KBr可获得较强的表面增强拉曼光谱 ;在正电性纳米银上 ,当分子的浓度较大时观察到荧光猝灭 ,当分子的浓度较小时观察到荧光增强 .而当荧光素钠分子 (FS)分别吸附在这两种纳米银上时 ,在负电性纳米银 ,观察到荧光猝灭 ;在正电性纳米银上观察荧光急剧增强现象 .从分子的结构及纳米银表面局域场增强或无辐射通道的增加对增强和猝灭的原因作了讨论 .     

染料分子吸附在正、负电性纳米银上的荧光增强及荧光猝死现象

制备了两种不同表面电性的胶态纳米银，选取阴离子型染料分子荧光素钠、既有阴离子基团又有阳离子的染料分子罗丹明B，研究其在两种纳米银表面的荧光增强及荧光猝死现象，当罗丹明B（RhB）分子分别吸附在这两种纳米银上时，对负电性纳米银，观察到荧光猝死、荧光峰红移现象，且在分子的浓度适当时，加入KBr可获得较强的表面增强拉曼光谱：在正电性纳米银上，当分子的浓度较大时观察到荧光猝灭，当分子的浓度较小时观察到荧光增强，而当荧光素钠分子（FS）分别吸附在这两种纳米银上时，在负电性纳米银，观察到荧光猝死；在正电性纳米银上观察荧光急剧增强现象，从分子的结构及纳米银表面局域场增强或无辐射通道的增加对增强和猝灭的原因作了讨论。     

纳米银粒子表面吸附染料分子的荧光增强及荧光猝灭现象

本文通过阴、阳离子型染料分子荧光素钠(FS)及若丹明6G(Rh6G)吸附在银胶体系内纳米银颗粒表面上,首次发现了FS的荧光增强谱及Rh6G的荧光猝灭谱.引起荧光增强及荧光猝灭的因素,除局域场和分子到金属表面能量转移这两个方面外,还与纳米银表面与被吸附分子之间的距离有关.     

吸附于银岛膜上的染料的表面荧光

利用“四能级”模型,对吸附于金属岛膜上的染料分子的表现荧光增强因子随分子表面覆盖度和分子的荧光量子效率的变化进行了理论分析,同时测量了吸附于银岛膜上的荧光素钠分子和若丹明6G分子的表观荧光增强因子随分子荧光量于效率的变化。 关键词：     

纳米银与表面吸附荧光素的荧光性能的影响

研究了纳米银粒子对表面吸附荧光素(fluorescein,Fl)的荧光性能的影响。Fl溶液中加入纳米银粒子,Fl分子包覆在纳米银粒子表面形成Fl_n-Ag复合物使纳米银相互桥连形成类似网络的结构,且Fl分子吸收峰随着纳米银浓度的增加发生红移。纳米银通过产生的强局域场将能量传输给Fl发光中心,实现了Fl的荧光增强,荧光增强效率随着纳米银浓度的增加具有最大值。较大粒径的纳米银使Fl获得最大荧光增强效率所需浓度较低且最大荧光增强效率值较高。研究结果表明,纳米银与Fl间的能量传输主要由Fl分子附近局域电磁场增强和分子到金属表面无辐射跃迁能量转移过程所决定并与纳米银的浓度、尺寸密切相关。     

显微-反射傅里叶变换红外光谱研究油酸钠与胶磷矿吸附机理

红外光谱已经成为浮选药剂作用机理研究的最重要手段之一。由于矿物本身具有较强的红外吸收,传统溴化钾压片透射光谱很难检测到矿物表面吸附药剂的微弱红外信号。采用显微-傅里叶变换红外光谱仪的反射模式,测定了不同浓度油酸钠在胶磷矿表面的吸附形式,并观察了吸附形貌。结果表明,与透射红外光谱相比,反射红外光谱对表面有更高的灵敏度,能更好地揭示实际浮选药剂浓度下的吸附机理。碱性条件下当油酸钠浓度较低时,油酸离子与表面晶格钙离子发生化学吸附,吸收峰在1 552 cm-1,同时也存在油酸钙沉淀的物理吸附,吸收峰在1 570和1 535 cm-1;当油酸钠浓度超过临界胶束浓度时,胶束使得胶磷矿表面亲水,导致油酸钠溶液残留在表面,吸收峰在1 560 cm-1,掩盖了其他吸收峰;表面经水洗涤后药剂吸收峰强度大幅减弱,是由于残留的油酸钠和物理吸附的油酸钙被洗掉。另外,随着油酸钠浓度增大,药剂二维形貌由点状吸附聚集为片状吸附,覆盖面积增大,但并不是完全覆盖,这与矿物表面异质性有关。以上研究结果有利于理解磷矿石提磷或铁矿石脱磷浮选体系中捕收剂与胶磷矿的作用机理。     

动力学研究AlN/α-Al2O3(0001)薄膜生长初期的吸附与扩散

采用基于第一性原理的从头计算分子动力学方法,计算了300-800℃下AlN吸附过程与系统能量、动力学轨迹以及扩散系数.研究表明,吸附过程由物理吸附、化学吸附和表面稳定态三个阶段组成,在吸附成键过程中,温度越高,粒子平均表面扩散能力增强.N原子的扩散系数大于Al原子的扩散系数,尤其是在物理吸附阶段.在较高温度条件下(大于700℃),N的解吸附作用明显增强,不利于AlN的稳定吸附生长,500-700℃之间的温度有利于AlN在α-Al2O3(0001)表面的稳定吸附生长.     

多孔硅吸附染料分子的荧光增强效应

报道了利用多孔硅独特的表面特性,吸附染料分子后,使得染料的荧光得到很大的增强,并观察到了这种吸附过程中彼此间的能量转移过程。对染料的荧光增强机理及实验结果进行了讨论。     

利用SERS效应研究表面吸附动力学过程

本文提出了利用表面增强喇曼散射(SERS)效应研究表面吸附动力学过程的设想.基于此设想,我们对固-液界面吸附动力学进行了理论探讨,讨论了SERS信号强度随时间的依赖性,从而得到有关表面吸附动力学参量,并利用银胶体系对对氨基苯甲酸的吸附动态过程进行初步实验研究.结果表明,利用SERS效应对表面吸附动力学、尤其是微量吸附动力学的研究是非常有效的. 关键词：     

动力学研究AlN/α-Al2Ｏ3（0001）薄膜生长初期的吸附与扩散

采用基于第一性原理的从头计算分子动力学方法,计算了300—800℃下AlN吸附过程与系统能量、动力学轨迹以及扩散系数.研究表明,吸附过程由物理吸附、化学吸附和表面稳定态三个阶段组成,在吸附成键过程中,温度越高,粒子平均表面扩散能力增强.N原子的扩散系数大于Al原子的扩散系数,尤其是在物理吸附阶段.在较高温度条件下（大于700℃）,N的解吸附作用明显增强,不利于AlN的稳定吸附生长,500—700℃之间的温度有利于AlN在α-Al₂Ｏ₃（0001）表面的稳定吸附生 关键词： 2Ｏ₃（0001）表面')" href="#">α-Al₂Ｏ₃（0001）表面 扩散 吸附生长 从头计算分子动力学     

The fabrication of silver-modified silicon nanowires and their excellent catalysis in the decomposition of fluorescein sodium

Silver-modified silicon nanowires were obtained and employed as catalysts in the decomposition of fluorescein sodium using sodium borohydride (SB) as a reducing agent. Their decomposition rate enhanced ca. 6 times compared to that of unsupported Ag nanoparticle catalysts, which demonstrated the excellent catalytic activity of silver-modified silicon nanowires.     

Enhancement of fluorescence of porous silicon upon saturation by liquid crystal

The fluorescence of samples of porous silicon of various morphologies that are filled with a liquid crystal (LC), n-pentyl-n′-cyanobiphenyl (5CB), is studied. The fluorescence spectra of the sample, along with the long-wavelength band of porous silicon with a maximum in the range 627–667 nm, exhibit a short-wavelength band of 5CB with a maximum in the range 385–410 nm. The radiative relaxation times of porous silicon and 5CB lie in the micro- and nanosecond ranges, respectively. It is found that the filling of pores with 5CB enhances the fluorescence of porous silicon by two to three times. This enhancement is caused by non-radiative energy transfer from 5CB to the porous matrix as a result of efficient interactions between LC molecules and pore walls. Using IR spectroscopy, it is shown that the formation of hydrogen bonds between cyano groups of 5CB molecules and silanol groups of pore surface is the predominant type of these interactions. A transfer mechanism is suggested according to which excited associates of 5CB molecules transfer their energy via surface channels to excitons of porous silicon, enhancing its fluorescence.     

多孔硅后处理对其镶嵌染料光学特性的影响

对多孔硅进行真空退火处理和暴露大气快速退火处理,将有机染料香豆素102(C102)镶嵌其中,研究镶嵌复合膜发光特性的变化。通过比较多孔硅退火处理前、后傅立叶红外(FT-IR)吸收光谱的变化,从多孔硅与镶嵌染料分子间的能量传递方式角度出发,解释了PS表面态氧化能改善镶嵌复合膜发光特性的原因。实验通过改变多孔硅表面态,提高了复合膜的发光效率和多孔硅基体的透明程度,证明了多孔硅是一种良好的载体,在发展固体激光器方面有一定的应用,同时为实现硅基蓝绿发光开辟一条新的途径。     

激发波长对多孔硅荧光特性的影响

用荧光光谱仪测量了多孔硅样品的任一给定点的荧光特性与激发波长的依赖关系, 发现当激发波长从650 nm变到340 nm时,该点的荧光谱峰位从780 nm连续蓝移到490 nm。用扫描电子显微镜(SEM)对多孔硅的截面进行了分析,结果显示多孔硅具有分形特性,这同作者的计算机模拟结果一致。结合多孔硅样品的激发光谱测量结果,多孔硅的荧光特性随激发波长改变的现象可以归因于多孔硅的分形结构以及量子尺寸效应。     

X-ray luminescence of disperse SiO2 and porous silicon

We carry out a comparison between the luminescence spectra (photo-and x-ray luminescence) of porous silicon and disperse SiO₂, which by its physical characteristics is most similar to oxide films on porous silicon. The photoluminescence of porous silicon was also investigated using fluorescence (excitation by a nitrogen laser) and metallographic microscopes. We found that the natures of the luminescence centers of porous silicon and disperse SiO₂ are identical. A porous layer on single-crystal silicon ensures the creation of a highly branched surface of oxide film. Luminescence centers are located on its inner (as viewed from the porous silicon) surface. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 247–251, March–April, 1998.     

Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity.     

表面活性剂修饰多孔硅的光致发光光谱

分别利用4种不同的表面活性剂对多孔硅进行表面修饰,结果表明油酸钠溶液、CPB溶液和乳化剂OP溶液修饰的多孔硅样品发光减弱,SDS溶液修饰的多孔硅样品发光增强,不同浓度的SDS溶液的增强倍数也不同。这种现象不仅可以为研究多孔硅的发光机制提供新的依据,还为提高多孔硅的发光效率提供了一个新的有效途径。     

Electrochemical deposition of cerium on porous silicon to improve photoluminescence properties

In this work, we present results for Cerium (Ce) doping effects on photoluminescence (PL) properties of porous silicon (PS). Cerium was deposited using electrochemical deposition on porous silicon prepared by electrochemical anodization of P-type (100) Si. From the photoluminescence spectroscopy, it was shown that porous silicon treated with cerium can lead to an increase of photoluminescence when they are irradiated by light compared to the porous silicon layer without cerium. In order to understand the contribution of cerium to the enhanced photoluminescence, energy dispersive X-ray (EDX) spectroscopy, Fourier transmission infrared spectroscopy (FTIR), X-ray diffraction (XRD) and atomic force microscopy (AFM) were performed, and it was shown that the improved photoluminescence may be attributed to the change of Si–H bonds into Si–O–Ce bonds and to a newly formed PS layer during electrochemical Ce coating.