Fabrication and characterization of superhydrophobic thin films based on TEOS/RF hybrid

Preparation of superhydrophobic silica-based thin film by adjusting different concentration of reverse (W/O) emulsion of resorcinol formaldehyde resin (re-RF) which was hybridised with silica sol has been developed. The hybrid films were coated by the mixing solution which included precursor solution (sol-gel process) and re-RF (sol-gel process). Rough surfaces were obtained by removing the organic polymer at high temperature and then the hydrophobic groups bonded onto the films were obtained by the reaction with trimethylchlorosilane (TMCS). Characteristic properties of the as-prepared cross-section and surface of the films were analyzed by scanning electron microscopy (SEM) and atom force microscopy (AFM). The experimental parameters are mainly varied the weight ratio of re-RF to silica sol from 0.2 to 4.0. The result showed that the contact angle of the modified silica film was greater than 160° when the weight ratio of re-RF to silica sol was 2.0.     

Deposition of diamond-like films from a high-velocity flow of a rarefied gas mixture

In contrast to the widespread deposition method of carbon films with the activation of gas mixtures on a hot wire, activation (dissociation of hydrogen and methane) is performed in a high-temperature channel formed by a tungsten coil in this study. From this channel, the gas is expanded to the substrate where deposition occurs. A film containing diamond crystals and hexagonal crystals having characteristic features of lonsdaleite is deposited at the channel temperature of 2100°C and the surrounding pressure of 20 mmHg. The diamond-like film is deposited from a high-velocity high-temperature un-ionized flow for the first time.     

Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

Sputtering technique has been used for the deposition of AgGaSe₂ thin films onto soda-lime glass substrates using sequential layer-by-layer deposition of GaSe and Ag thin films. The analysis of energy dispersive analysis of X-ray (EDXA) indicated a Ga-rich composition for as-grown samples and there was a pronounce effect of post-annealing on chemical composition of AgGaSe₂ thin film. X-ray diffraction (XRD) measurements revealed that Ag metallic phase exists in the amorphous AgGaSe₂ structure up to annealing temperature 450 °C and then the structure turned to the single phase AgGaSe₂ with the preferred orientation along (1 1 2) direction with the annealing temperature at 600 °C. The surface morphology of the samples was analyzed by scanning electron microscopy (SEM) measurements. The structural parameters related to chalcopyrite compounds have been calculated. Optical properties of AgGaSe₂ thin films were studied by carrying out transmittance and reflectance measurements in the wavelength range of 325-1100 nm at room temperature. The absorption coefficient and the band gap values for as-grown and annealed samples were evaluated as 1.55 and 1.77 eV, respectively. The crystal-field and spin-orbit splitting levels were resolved. These levels (2.03 and 2.30 eV) were also detected from the photoresponse measurements almost at the same energy values. As a result of the temperature dependent resistivity and mobility measurements in the temperature range of 100-430 K, it was found that the decrease in mobility and the increase in carrier concentration following to the increasing annealing temperature attributed to the structural defects (tetragonal distortion, vacancies and interstitials).     

Deposition and characterization of diamond epitaxial thin films on silicon substrates

Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.     

Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings.Thin film coatings of palladium,which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H_2pumping speed,were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas.The TiZrV-Pd film properties were investigated by atomic force microscope(AFM),scanning electron microscope(SEM),X-ray photoelectron spectroscopy(XPS) and X-Ray Diffraction(XRD).The grain size of TiZrV and Pd films were about 0.42-1.3 nm and 8.5-18.25 nm respectively.It was found that the roughness of TiZrV films is small,about 2-4 nm,but for Pd film it is large,about 17-19 nm.The PP At.%of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.     

Pt coated Cr2O3 thin films for resistive gas sensors

The resistive response of atomic layer deposited thin epitaxial α-Cr₂O₃(0 0 1) films, to H₂ and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion of chemical states, Pt²⁺ and Pt⁴⁺, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt⁴⁺ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250°C.      

Deposition of thin diamond films

This short review summarizes basic knowledge about the diamond film growth. Fundamental technologies of diamond film fabrication are compared. Some factors affecting the diamond crystal growth are discussed.Support of this work by the Ångström Interdisciplinary Association for Thin Film Processing at Uppsala University is gratefully acknowledged.     

Deposition and characterization of transparent and conductive sprayed ZnO:B thin films

Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation of boron doping concentration in reducing solution on film properties was investigated. Low angle X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The films with resistivity 2.54×10⁻³ Ω-cm and optical transmittance >90% were obtained at optimized boron doping concentration. The optical band gap of ZnO:B films was found ∼3.27 eV from the optical transmittance spectra for the as-deposited films. Due to their excellent optical and electrical properties, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.     

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlOZnO薄膜 氩氢混合气体 薄膜生长 异质结构 薄膜物理学ZnO, PLD, heterostructureProject supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).2005-05-309/3/2005 12:00:00 AMHigh-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and baAlO3 substrates by pulsed laser deposition （PLD） in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. in addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ - Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.     

Electrical conductivity of BaCe0.9Nd0.1O3−α in H2+H2O+Ar gas mixture

Electroconductivity of BaCe_0.9Nd_0.1O_3−α was studied as a function of the composition of the H₂+H₂O+Ar mixture and temperature in the interval from 873 to 1173 K. It was shown that the electroconductivity was independent of P_H2 (0.97 to 0.10 atm) and P_O2 (10⁻²¹ to 10⁻²⁶ atm), but depended on P_H2O (0.08 to 0.005 atm). A mathematical processing of the P_H2O dependencies of the electroconductivity, which was performed in terms of a classical model of defect formation in high-temperature proton-conducting solid electrolytes, yielded equilibrium constants of the reaction of water dissolution in BaCe_0.9Nd_0.1O_3−α and mobilities of protons and oxygen ions. The temperature dependencies of these quantities were used to determine the mobility activation energies of protons (E_a=34±7 kJ/mole) and oxygen ions (E_a=72±8 kJ/mole), and also the enthalpy (ΔH=−150±25 kJ/mole) and the entropy (ΔS=153±26 kJ/mole·K) of the reaction of water dissolution in BaCe_0.9Nd_0.1O_3−α.     

Deposition of superconducting thin films of YBa2Cu3O x on sintered SrTiO3 substrates

Thin films of highT _coxide superconductor were deposited on sintered SrTiO₃ substrates by 50 Hz a.c. sputtering. The superconducting onset temperature occurred at 90 K and the offset temperature at 72 K. The deposition conditions were found to influence the ordering of the annealed films.     

Preparation and characterization of the LiInSe2 thin films

Summary p-type LiInSe₂ films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Preparation and characterization of ferroelectric SrBi2Ta2O9 thin films on Si using Al2O3 buffer layers

SrBi₂Ta₂O₉ (SBT) thin films were prepared on p-type Si(100) substrates with Al₂O₃ buffer layers. Both the SBT films and the Al₂O₃ buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used to prevent Si surface oxidization in the initial growth stage. It is shown that Al₂O₃ buffer layers effectively prevented interdiffusion between SBT and Si substrates. Furthermore, the capacitance–voltage (C-V) characteristics of the SBT/Al₂O₃/Si heterostructures show a hysteresis loop with a clockwise trace, demonstrating the ferroelectric switching properties of SBT films and showing a memory window of 1.6 V at 1 MHz. Received: 17 July 2000 / Accepted: 16 August 2000 / Published online: 30 November 2000     

Deposition and characterization of sputtered ZnO films

Zinc oxide thin films were deposited by radio frequency magnetron sputtering at room temperature using a metallic zinc target in a gas mixture of argon and oxygen. Plasma power, oxygen /argon gas ratio, gas pressure, and substrate temperature were varied, and an experimental design method was used to optimize these deposition parameters by considering their interdependence. Crystalline structures and film stresses were examined. Post-deposition rapid thermal annealing was also carried out to observe its effects on the film properties. Statistical analysis was then used to find the optimal sputtering conditions. Results indicated that plasma power and gas pressure have the largest effects on film crystallization and stress and that postdeposition annealing can be used to improve the quality of the film properties.     

Exciton-phonon interaction in Y2O3 and Sc2O3 thin films

An investigation is made of the fundamental absorption edge of Y₂O₃ thin films. Based on its temperature dependence the exciton-phonon interaction is studied, which makes it possible to interpret the absorption edge as the absorption of self-localized excitons. A number of parameters of the energy spectrum of the investigated films are determined. I. Franko State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 1, pp. 132–134, January–February, 1999.     

溶胶-凝胶法制备纳米多孔SiO2薄膜

以正硅酸乙酯(TEOS)为原料，采用旋转涂敷的方法，结合溶胶-凝胶技术在硅衬底上制备超低介电常数多孔SiO₂薄膜.采用两种不同的改性方法对薄膜表面进行改性，傅里 叶变换红外光谱分析发现改性后薄膜中含有大量的—CH₃键，从而减少了孔洞塌陷.用扫 描电子显微镜观察薄膜的表面形貌，发现薄膜内孔洞尺寸在70—80 nm之间.调节溶胶pH值，发现pH值越小凝胶时间越长.对改性样品热处理的结果表明，在300 ℃时介电常数最低达2.05. 关键词： 2')" href="#">多孔SiO₂ 低介电常数 溶胶-凝胶     

Deposition of copper oxide (Cu2O,CuO) thin films at high temperatures by plasma-enhanced CVD

Copper-oxide films are deposited by plasma-enhanced CVD using copper acetylacetonate as a precursor. The influence of various experimental parameters on deposition rate, film composition and resistivity have been studied. The substrate temperature and the bias are the parameters which affect these properties the most. An increase of the substrate temperature changes the phases of the deposit from Cu₂O-CuO over Cu₂O to Cu. At temperatures 500° C the deposition rates are high but the films consist mainly of metallic Cu. A negative bias enhances the deposition rate only slightly but has a strong effect on the film composition and can completely balance the oxygen deficiency. At a bias of –120 V the films consist of pure CuO even at temperatures 500° C.