闪光照相图像缺陷消除方法

 介绍了一种检测闪光照相图像缺陷以及消除这些缺陷的方法。在闪光照相实验中,底片图像会出现一些小尺寸的缺陷影响了底片信息的精确提取。根据闪光照相实验中采用完全一样的多张底片接收的特点,提出了一种闪光照相多底片图像的缺陷消除方法。首先对这些底片图像进行精确配准,将这些图像进行简单平均以获得均值图像,利用均值图像与各底片图像的差值获得缺陷图像,然后根据缺陷图像的特点对缺陷进行分割并判断各缺陷的归属。最后根据均值图像与缺陷图像以及缺陷分割与判断结果获得修补后的底片图像。实验结果证明该方法可以有效地消除多底片图像中的各类缺陷。     

基于图像边缘信息和Fisher准则的钢板表面缺陷分割研究

针对钢板表面缺陷图像信噪比低、缺陷目标小且形态差别大等特点,提出了一种基于边缘信息和Fisher准则相结合的图像分割方法。该方法首先采用梯度算子检测出缺陷图像的边缘,并对边缘检测所得的梯度图进行灰度拉伸,提高梯度图的对比度;然后利用Fisher准则寻找最佳阈值,分割出缺陷;最后运用数学形态学滤除噪声,实现了缺陷的自动分割和定位。实验证明,该方法不仅能够识别出弱小的缺陷,而且实现了在线实时检测。     

应用超声干涉特征识别微小缺陷

航空用金属材料中允许存在的缺陷越来越小,有时需要识别几十微米的夹渣缺陷.由于微小缺陷对声波的反射能力弱,常用的超声脉冲反射法的识别能力遇到瓶颈.该文利用超声干涉原理对微小缺陷进行识别.首先,理论分析入射波与微缺陷散射波的干涉机理;其次,采用有限元仿真方法分析了入射波经过微小缺陷后的波形变化,归纳出入射波与微缺陷散射波干...     

基于深度学习的铸件X射线图像分割研究

针对当前图像分割算法在实现工业铸件内部缺陷分割上精度低且算法不够轻量化的问题,提出一种基于改进DeepLabv3+的工业铸件内部缺陷检测算法Effi-DeepLab。该方法采用EfficientNet中的MBConv来代替原有的Xception模块进行特征提取,使特征提取网络更加高效与轻量化;针对工业铸件内部缺陷尺寸小的问题,重新设计空洞空间金字塔池化（ASPP）层中空洞卷积的扩张率,使得卷积块对小目标具有更高的鲁棒性;在解码端充分利用特征提取阶段的低阶语义信息进行多尺度特征融合,以提高小目标缺陷分割的精度。实验结果表明,在本文使用的汽车轮毂内部缺陷图像数据集中,Effi-DeepLab模型对缺陷的分割准确率和平均交并比（mIoU）分别为93.58%和89.39%,相比DeepLabv3+分别提升了2.65%和2.24%,具有更好的分割效果;此外,还通过实验验证了本文提出算法具有良好的泛化性。     

基于拓展型特征金字塔的OLED像素缺陷检测方法

针对传统方式检测有机发光二极管（OLED）像素缺陷精度低以及成本高的问题,提出了一种基于拓展型特征金字塔网络（FPN）的喷墨打印OLED像素缺陷检测方法。首先对数据进行处理,获得喷墨打印OLED像素图像数据集,随后利用预训练模型ResNet18作为主干,选取其底层模块作为特征提取器,制定出更加适合打印像素缺陷的训练网络。通过将FPN进行拓展,使用具有丰富区域细节的大规模超分辨率特征来解耦像素缺陷检测,实现缺陷区域信息的获取与缺陷的像素级分割。实验中对比了不同方法在OLED像素数据集上的检测效果并评估了不同方法在几个缺陷类型上的性能。结果表明：所提出的方法对喷墨打印OLED像素缺陷的识别精度比直接使用FPN提升了5.5%（达到99.8%）,对缺陷区域的分割平均精度提升3.7%（达到88.8%）,且所提模型适用于小样本缺陷数据检测,具有研究价值和实践意义。     

减少光学元件亚表面缺陷的方法研究

针对强激光光学元件的应用要求,对光学材料在研磨和抛光过程中形成的亚表面缺陷进行了分析,并借鉴小工具数控抛光和Marangoni界面效应,提出采用数控化学刻蚀技术来实现光学表面面形和微结构形貌的高准确度加工.通过实验对亚表面缺陷的分布位置和特性进行了分析,实验验证了在静止和移动条件下Marangoni界面效应的存在.对材料的定量去除进行了实验,提出了亚表面缺陷的去除方法.     

减少光学元件亚表面缺陷的方法研究

针对强激光光学元件的应用要求,对光学材料在研磨和抛光过程中形成的亚表面缺陷进行了分析,并借鉴小工具数控抛光和Marangoni界面效应,提出采用数控化学刻蚀技术来实现光学表面面形和微结构形貌的高准确度加工．通过实验对亚表面缺陷的分布位置和特性进行了分析,实验验证了在静止和移动条件下Marangoni界面效应的存在．对材料的定量去除进行了实验,提出了亚表面缺陷的去除方法．     

TOFD图像时域解混叠的自适应匹配追踪方法*

当TOFD检测的时域分辨率不足时,小缺陷的上下端点衍射波会出现时域混叠,难以准确判断缺陷性质及测量缺陷高度。为解决此问题,提出了自适应匹配追踪算法,该算法利用主成分分析法从检测图像中提取匹配追踪原子,根据散射规律生成字典,通过正交匹配追踪算法实现对时域混叠信号的分离,并使用投影矢量重新成像,实现对缺陷上下端点的有效区分。该方法能够改进TOFD技术在小缺陷测高方面的不足,试验证明,该方法对薄板对接接头中高度为1.80 mm的埋藏缺陷测量误差小于0.30 mm。     

刹车片表面缺陷的图像检测方法

针对汽车刹车片表面纹理情况不一、种类繁多的问题,提出一种基于机器视觉的刹车片表面缺陷图像检测方法,该方法结合了灰度共生矩阵与密度聚类。首先提取刹车片的摩擦面,然后确定灰度共生矩阵的构造因子的选取,利用线性相关性选择特征参数。将每个摩擦面切分成若干小窗口,计算各个小窗口的特征值构造特征数据集,通过自适应密度聚类算法进行聚类分析,从而进一步判断是否存在缺陷区域。通过对58块不同型号的刹车片样本进行检测结果统计分析,实验表明,该方法误检率为8%,漏检率为6%,具有较高的检测精度,因此,该方法能够较好地检测刹车片样本是否存在缺陷,具有广泛的适用性。     

光学元件亚表面缺陷结构的蚀刻消除

 针对强激光光学元件的应用要求，对光学材料在研磨和抛光过程中形成的亚表面缺陷进行了分析，并借鉴小工具数控抛光和Marangoni界面效应，提出采用数控化学刻蚀技术来实现光学表面面形和微结构形貌的高精度加工，对亚表面缺陷具有很好的克服和消除作用。通过实验对亚表面缺陷的分布位置和特性进行了分析，同时实验验证了在静止和移动条件下Marangoni界面效应的存在，对材料的定量去除进行了实验，提出了亚表面缺陷的去除方法。     

光学元件亚表面缺陷的全内反射显微检测

 光学元件亚表面缺陷的有效检测已成为高阈值抗激光损伤光学元件制造的迫切要求。基于全内反射照明原理开展了全内反射显微技术检测光学元件亚表面缺陷的实验研究。结果表明：全内反射显微技术可有效检测光学元件亚表面缺陷;入射光偏振态和入射角度会影响元件内界面下不同深度处驻波形式照明强度的分布,对于可见度发生明显改变的微小缺陷点能衡量出其一定的深度尺寸范围;利用显微镜精密调焦对界面下一定深度处缺陷成像,可知缺陷点的位置深度。     

The differential geometry of elementary point and line defects in Bravais crystals

Since line defects (dislocations) and point defects (vacancies, self-interstitials, point stacking faults) in Bravais crystals can mutually convert, only theories which comprise these two sorts of defects can be closed in the sense of general field theory. Since the pioneering work of Kondo and of Bilby, Bullough, and Smith it is clear that differential geometry is the appropriate mathematical tool to formulate a field theory of defects in ordered structures. This is done here on the example of the Bravais crystal, where the above-mentioned defects are the only elementary point and line defects. It is shown that point defects can be described by a step-counting procedure which makes it possible to include also point stacking faults as elementary point defects. The results comprise two equations with the appropriate interpretation of the mathematical symbols. The point defects are step-counting defects and are essentially described by a metric tensorg, which supplements the torsion responsible for the dislocations. The proposed theory is meant to form a framework for defect phenomena, in a similar way that Maxwell's theory is a framework for the electromagnetic world.     

基于ICT切片图像相邻层信息的缺陷自动识别方法

 现有的工业计算机断层成像（ICT）图像缺陷识方法中,多采用对单张图像进行孤立评判方法,此类方法未能考虑到单张图像在相邻层图像信息关联性,因而易将孤立的噪音视为缺陷,造成误判。为解决这一问题,提出一种基于序列ICT切片图像自动识别方法,该方法将识别过程分为两步：单张图像的潜在缺陷提取和相邻层图像缺陷的匹配。第一步运用传统方法识别出每张图像中所有潜在缺陷;第二步根据真缺陷在相邻层具有匹配关系而伪缺陷则相对孤立的特点,通过分步匹配的方法确定每张图像上所有潜在缺陷在相邻层图像上的匹配关系,区分出真伪缺陷。最后通过实例验证表明：利用该方法可以有效得提高真缺陷得识别率,降低误判率。     

基于自适应阈值法的合金弹头缺陷尺寸测量算法研究

在合金弹头缺陷尺寸检测中,针对传统分割算法无法在复杂背景下将缺陷完整分割的问题,采用了自适应阈值分割算法。该算法在分割时,图像的每个像素对应的阈值不同,可避免缺陷和背景错误划分,而且可以在保证缺陷完整分割的情况下避免噪声带来的干扰。给出了缺陷分割过程,完成了缺陷尺寸计算,并对尺寸计算的准确度进行了分析。实验结果表明,在缺陷与背景灰度差较小的情况下,该算法仍可较为完整地将缺陷分割出来,测量结果的标准差为0.122 8,不确定度为0.368 4。     

Invisible defects in complex crystals

We show that invisible localized defects, i.e. defects that cannot be detected by an outside observer, can be realized in a crystal with an engineered imaginary potential at the defect site. The invisible defects are synthesized by means of supersymmetric (Darboux) transformations of an ordinary crystal using band-edge wavefunctions to construct the superpotential. The complex crystal has an entire real-valued energy spectrum and Bragg scattering is not influenced by the defects. An example of complex crystal synthesis is presented for the Mathieu potential.     

同质硅分子束外延层的界面缺陷的研究

对同质硅分子束外延层的界面缺陷进行了测试与分析．对存在高浓度施主型界面缺陷的Ｐ型材料，通过解泊松方程计算了该材料的肖特基势垒的能带图，得到了该缺陷能级上电子的填充与发射随外加反向偏压变化的情况．并分析了用深能级瞬态谱（ＤＬＴＳ）对其进行测试所需的条件，以及与常规的ＤＬＴＳ测试结果的不同之处．提出了可同时对该缺陷上电子的发射和俘获过程进行ＤＬＴＳ测量的方法．实验测量结果表明，该高密度的界面缺陷的能级位置位于Ｅ_c－０．３０ｅＶ． 关键词：     

Cost-effective calculation of defects in Si using hybrid density functional with downsampled reciprocal grids

A deep understanding of defects in terms of stability and optoelectronic properties is essential for optimizing semiconductor devices. For faster and more accurate investigation of defects, we examined whether the hybrid density functional theory calculation can be performed cost-effectively by downsampling the k-point meshes for Fock exchange potential. The P dopant and Si self-interstitial defects were used to check the convergence of the total energy. Our calculation shows that the defect properties like the formation energy and the charge transition levels can be cost-effectively calculated by using downsampled k-point meshes. We also investigated the intrinsic vacancy defects and obtained consistent results with previous studies.     

Acoustic phonons transport in a quantum waveguide embedded double defects

By using scattering matrix method, we investigate the acoustic phonons transport in a quantum waveguide embedded double defects at low temperatures. When acoustic phonons propagate through the waveguide, the total transmission coefficient versus the reduced phonon frequency exhibits a series of resonant peaks and dips, and acoustic waves interfere with each other in the waveguide to form standing wave with particular wavelengths. In the waveguide with void defects, acoustic phonons whose frequencies approach zero can transport without scattering. The acoustic phonons propagating in the waveguide with clamped material defects, the phonons frequencies must be larger than a threshold frequency. It is also found that the thermal conductance versus temperature is qualitatively different for different types of defects. At low temperatures, when the double defects are void, the universal quantum thermal conductance and a thermal conductance plateau can be clearly observed. However, when the double defects consist of clamped material, the quantized thermal conductance disappears but a threshold temperature where mode 0 can be excited emerges. The results can provide some references in controlling thermal conductance artificially and the design of phonon devices.     

A Hierarchy of Defects in Biaxial Nematics

We study the topological properties of the manifolds which describe uniaxial and biaxial nematics in order to compare and classify all types of bulk and surface defects that can arise in a nematic liquid crystal. We explain how topological charges can be assigned both to isotropic defects in uniaxial nematics and to uniaxial defects in biaxial nematics; we further see how it is possible to distinguish between isolated surface defects and surface defects which extend in the bulk, and between surface defects which can relax in the bulk and defects forced to stay on the surface. Received: 28 November 1994 / Accepted: 30 September 1996     

Acoustic phonons transport in a quantum waveguide embedded double defects

By using scattering matrix method, we investigate the acoustic phonons transport in a quantum waveguide embedded double defects at low temperatures. When acoustic phonons propagate through the waveguide, the total transmission coefficient versus the reduced phonon frequency exhibits a series of resonant peaks and dips, and acoustic waves interfere with each other in the waveguide to form standing wave with particular wavelengths. In the waveguide with void defects, acoustic phonons whose frequencies approach zero can transport without scattering. The acoustic phonons propagating in the waveguide with clamped material defects, the phonons frequencies must be larger than a threshold frequency. It is also found that the thermal conductance versus temperature is qualitatively different for different types of defects. At low temperatures, when the double defects are void, the universal quantum thermal conductance and a thermal conductance plateau can be clearly observed. However, when the double defects consist of clamped material, the quantized thermal conductance disappears but a threshold temperature where mode 0 can be excited emerges. The results can provide some references in controlling thermal conductance artificially and the design of phonon devices.