TNT及RDX蒸气对基于芘氧敏感膜荧光猝灭的研究

制备了以芘为敏感材料,聚苯乙烯(PS)以及聚氯乙烯(PVC)粉末为支持体系的两种荧光猝灭氧敏感膜.PS以及PVC氧敏感膜的最大激发波长分别为349 nm和355 nm,最大发射波长分别为399 nm和398 nm.分子氧对PS以及PVC氧敏感膜的荧光均有猝灭作用.同时,实验发现2,4,6-三硝基甲苯(TNT)和环三亚甲基三硝基胺(RDX)对这两种氧敏感膜的荧光也有一定的猝灭.     

Quantum chemistry studies of electronically excited nitrobenzene, TNA, and TNT

The electronic excitation energies and excited-state potential energy surfaces of nitrobenzene, 2,4,6-trinitroaniline (TNA), and 2,4,6-trinitrotoluene (TNT) are calculated using time-dependent density functional theory and multiconfigurational ab initio methods. We describe the geometrical and energetic character of excited-state minima, reaction coordinates, and nonadiabatic regions in these systems. In addition, the potential energy surfaces for the lowest two singlet (S(0) and S(1)) and lowest two triplet (T(1) and T(2)) electronic states are investigated, with particular emphasis on the S(1) relaxation pathway and the nonadiabatic region leading to radiationless decay of S(1) population. In nitrobenzene, relaxation on S(1) occurs by out-of-plane rotation and pyramidalization of the nitro group. Radiationless decay can take place through a nonadiabatic region, which, at the TD-DFT level, is characterized by near-degeneracy of three electronic states, namely, S(1), S(0), and T(2). Moreover, spin-orbit coupling constants for the S(0)/T(2) and S(1)/T(2) electronic state pairs were calculated to be as high as 60 cm(-1) in this region. Our results suggest that the S(1) population should quench primarily to the T(2) state. This finding is in support of recent experimental results and sheds light on the photochemistry of heavier nitroarenes. In TNT and TNA, the dominant pathway for relaxation on S(1) is through geometric distortions, similar to that found for nitrobenzene, of a single ortho-substituted NO(2). The two singlet and lowest two triplet electronic states are qualitatively similar to those of nitrobenzene along a minimal S(1) energy pathway.     

The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS.     

Special aspects of the photoluminescence of thermally annealed porous silicon layers

The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.     

Photoluminescence quenching effect on porous silicon films for gas sensors application

Porous silicon (PS) films were investigated by Raman, and photoluminescence (PL) spectroscopies using different laser excitations: 488.0, 514.5, 632.8, and 782.0 nm. The analysis of the first-order and second-order Raman spectra have shown that the band gaps of the PS films are indirect as in the bulk c-Si. The Raman phonon and the PL spectra as well as the spectral distribution of the linear polarisation degree (LPD) of PS layers have shown to be dependent on the laser excitation energy. This dependence cannot be explained within the quantum confinement model. A mechanism for the PL emission in PS layers is presented in which the radiative recombination of electron-hole pairs occurs in localised centres (the Si-O-SiR moieties) at the pore/crystallite interface. These quasi-molecular centres are Jahn-Teller active, i.e. the radiative recombination is a phonon-assisted phenomena. The adsorption of gas molecules on the porous silicon surface was studied throughout photoluminescence quenching effect. The adsorption experiments were performed at 10(-6) bar of pressure using gas molecules of organic solvents. In all these cases, the PL intensity was recovered after gas desorption. The PL quenching effect was explained in the sense of electron transfer mechanism (ET).     

Intra- and intermolecular quenching of carbazole photoluminescence by imidazolidine radicals

Mechanisms of carbazole photoluminescence quenching by the free and chemically bound nitroxyl radicals in the model bound system “carbazole (CBZ)—imidazolidine nitroxyl radical R^•” were investigated and the photophysical properties of the system were studied and compared with those of free CBZ and R^• in solution. The quantum yield and lifetime of fluorescence from the local singlet excited state of the carbazole moiety in the bound CBZ—R^• system is three orders of magnitude lower than in free CBZ. The lifetime of the local triplet excited state of the carbazole moiety in the bound system is shorter than 50 ns. The rate constants for intermolecular quenching of the singlet and triplet excited states of free CBZ by R^• in acetonitrile were found to be (1.4±0.1)·10¹⁰ and (1.5±0.2)·10⁹ L mol⁻¹ s⁻¹, respectively. The most plausible mechanisms of both free and covalently bound carbazole luminescence quenching by nitroxyl radicals are exchange energy transfer and acceleration of internal conversion due to electron exchange.     

Enhancement and stabilization of the photoluminescence from porous silicon prepared by Ag‐assisted electrochemical etching

In this paper, we present the results of studies on the photoluminescence (PL) of porous silicon (PSi) samples obtained by etching with the assistance of silver metal in different ways. If the Si sample, after being coated with a layer of silver nanoparticles, is electrochemically etched, its PL intensity becomes hundreds of times stronger than the PL intensity when it is chemically etched in the similar conditions. The difference in the PL intensities is explained partly by the anodic oxidation of silicon which occurs during the electrochemical etching process. The most obvious evidence that silicon had been oxidized anodically in the electrochemical etching process is the disappearance of the PSi layer and the appearance of the silicon oxide layer with mosaic structure when the anodization current density is large enough. The anodic oxidation has the effect of PSi surface passivation. Because of that, the PL of obtained PSi becomes stronger and more stable with time. Copyright © 2012 John Wiley & Sons, Ltd.     

Self-assembled synthesis of SERS-active silver dendrites and photoluminescence properties of a thin porous silicon layer

Via electroless metal deposition, well-defined silver dendrites and thin porous silicon (por-Si) layers are simultaneously prepared in ammonia fluoride solution containing AgNO₃ at 50 °C. A self-assembled localized microscopic electrochemical cell model and a diffusion-limited aggregation mode are used to explain the growth of silver dendrites. The formation of silver dendritic nanostructures derives from the continuous aggregation growth of small particles on a layer of silver nanoparticles or nanoclusters (Volmer-Weber layer). Thin and homogeneous nanostructure por-Si layers display visible light-emission properties at room temperature. The investigation of the surface-enhanced Raman scattering (SERS) reveals that the film of silver dendrites on por-Si is an excellent substrate with significant enhancement effect.     

Detection of pure chemical vapors in a thermally cycled porous silica photonic crystal

The condensation and evaporation of vapors of isopropanol, heptane, and cyclohexane in mesoporous silica photonic crystals are monitored by optical reflection spectroscopy as a function of sensor temperature. The spectral position of the stop band shifts to the red upon analyte adsorption, and it shifts to the blue as the sensor is heated and analyte evaporates from the porous nanostructure. The hysteresis of the optical response as the temperature of the sensor is cycled between 25 and 80 °C is characteristic of each analyte for partial pressures between 0 and 7.5 Torr. These characteristic hysteresis loops allow identification of the three analytes. The temporal response of the sensor is studied as a function of heating rate and analyte concentration in a flowing stream of analyte vapor, and it is compared with the equilibrium adsorption isotherms of the sensor. The ability of the temporal data to identify the analytes is attributed to differences in diffusion and adsorption properties of each analyte within the mesoporous silica sensor.     

Fluorescent Detection of 2,4‐DNT and 2,4,6‐TNT in Aqueous Media by Using Simple Water‐Soluble Pyrene Derivatives

Pyrene‐containing water‐soluble probes for the fluorescent detection of nitroaromatic compounds (NACs), such as explosive components (2,4‐DNT and 2,4,6‐TNT) and herbicides (2,4‐dinitrocresol, 2,4‐DNOC), in aqueous media are reported. In the probes, the introduction of surface‐active hydrophilic “heads” at the periphery of lipophilic (i.e., hydrophobic) pyrene “tails” resulted in the formation of highly fluorescent micelle‐like aggregates/pre‐associates in aqueous solutions at concentrations of ≤10^?5 m . The enhanced fluorescence quenching of the herein reported architectures is achieved in the presence of ultra‐trace amounts of TNT or 2,4‐DNT with values of Stern–Volmer quenching constant close to 1×10⁵ m ^?1 and a detection limit as low as 182 ppb. The most hydrophilic probes demonstrated higher response to 2,4‐DNT over TNT. Filter paper test strips impregnated with 1×10^?5 m solutions of the probes were able to detect TNT, 2,4‐DNT, and other NACs at levels as low as 50 ppb in water.     

气相色谱法测定DNT废酸、废水中的甲苯及硝基甲苯等含量

研究气相色谱在测定废水、废酸中甲苯、硝基甲苯含量方面的应用.根据相关标准及废酸、废水处理的实际情况确定最佳的实验条件,废水样12次测定结果的相对标准偏差小于0.5％,加标回收率为98.31％.该法测定结果精确度高,适合DNT废酸、废水处理的分析监控.     

Study of thioflavin-T immobilized in porous silicon and the effect of different organic vapors on the fluorescence lifetime

Steady-state and time-resolved emission techniques have been employed to study the fluorescence properties of thioflavin-T (ThT) adsorbed on oxidized porous silicon (PSi) surfaces, with an average pore size of ～10 nm. We found that the average fluorescence decay time of ThT, when it is adsorbed on the PSi surface, is rather long, τ(av) = 1.3 ns. We attribute this relatively long emission lifetime to the effect of the immobilization of ThT on the PSi surface, which inhibit the rotation of the aniline with respect to the benzothiazole moieties of ThT. We also measured the fluorescence properties of ThT in PSi samples in equilibrium with vapors of several liquids, such as methanol, acetonitrile, and water. We found that the fluorescence intensity drops by a factor of 10, and the average decay time, measured by a time-correlated single-photon counting technique, decreases by a factor of 3. We explain these results in terms of liquid condensation of the vapors in the PSi pores, which leads to partial dissolution of the ThT molecules in the liquid pools.     

Highly Sensitive and Selective Fluorometric/Electrochemical Dual‐Channel Sensors for TNT and DNT Explosives

A novel electro‐active compound, TCAC , is synthesized and its electrochemical polymerized film is used to detect 2,4,6‐trinitrotoluene (TNT) and 2,4‐dinitrotoluene (DNT) explosives through a fluorometric/electrochemical dual‐channel sensor with high sensitivity and selectivity. In particular, the electrochemical sensor for the analysis of TNT had an enhanced sensitivity of 0.5 μM . The detection limit of the sensor was calculated to be 15 nM .     

On the pH-dependent quenching of quantum dot photoluminescence by redox active dopamine

We investigated the charge transfer interactions between luminescent quantum dots (QDs) and redox active dopamine. For this, we used pH-insensitive ZnS-overcoated CdSe QDs rendered water-compatible using poly (ethylene glycol)-appended dihydrolipoic acid (DHLA-PEG), where a fraction of the ligands was amine-terminated to allow for controlled coupling of dopamine-isothiocyanate onto the nanocrystal. Using this sample configuration, we probed the effects of changing the density of dopamine and the buffer pH on the fluorescence properties of these conjugates. Using steady-state and time-resolved fluorescence, we measured a pronounced pH-dependent photoluminescence (PL) quenching for all QD-dopamine assemblies. Several parameters affect the PL loss. First, the quenching efficiency strongly depends on the number of dopamines per QD-conjugate. Second, the quenching efficiency is substantially increased in alkaline buffers. Third, this pH-dependent PL loss can be completely eliminated when oxygen-depleted buffers are used, indicating that oxygen plays a crucial role in the redox activity of dopamine. We attribute these findings to charge transfer interactions between QDs and mainly two forms of dopamine: the reduced catechol and oxidized quinone. As the pH of the dispersions is changed from acidic to basic, oxygen-catalyzed transformation progressively reduces the dopamine potential for oxidation and shifts the equilibrium toward increased concentration of quinones. Thus, in a conjugate, a QD can simultaneously interact with quinones (electron acceptors) and catechols (electron donors), producing pH-dependent PL quenching combined with shortening of the exciton lifetime. This also alters the recombination kinetics of the electron and hole of photoexcited QDs. Transient absorption measurements that probed intraband transitions supported those findings where a simultaneous pronounced change in the electron and hole relaxation rates was measured when the pH was changed from acidic to alkaline.     

The quenching of CdSe quantum dots photoluminescence by gold nanoparticles in solution

The photoluminescence (PL) of CdSe quantum dots (QD) in aqueous media has been studied in the presence of gold nanoparticles (NP) with different shapes. The steady state PL intensity of CdSe QD (1.5-2 nm in size) is quenched in the presence of gold NP. Picosecond bleach recovery and nanosecond time-resolved luminescence measurements show a faster bleach recovery and decrease in the lifetime of the emitting states of CdSe QD in the presence of quenchers. Surfactant-capped gold nanorods (NR) with aspect ratio of 3 and surfactant-capped and citrate-capped nanospheres (NS) of 12 nm diameter were used as quenchers in order to study the effect of shape and surface charge on the quenching rates. The Stern-Volmer kinetics model is used to examine the observed quenching behavior as a function of the quencher concentration. It was found that the quenching rate of NR is more than 1000 times stronger than that of NS with the same capping material. We also found that the quenching rate decreases as the length of the NR decreases, although the overlap between the CdSe emission and the NR absorption increases. This suggests that the quenching is a result of electron transfer rather than long-range (Forster-type) energy transfer processes. The quenching was attributed to the transfer of electron with energies below the Fermi level of gold to the trap holes of CdSe QD. The observed large difference between NR and NS quenching efficiencies was attributed to the presence of the [110] facets only in the NR, which have higher surface energy.     

Efficient quenching of photoluminescence from functionalized single-walled carbon nanotubes by nitroaromatic molecules

The photoluminescence from functionalized single-walled carbon nanotubes was found to be highly sensitive to the presence of nitroaromatic compounds such as nitrobenzene, 4-nitrotoluene, and 2,4-dinitrotoluene. The strong luminescence quenching in solution was at the upper limit of diffusion-control and also showed significant static quenching contributions. Mechanistic implication of the results and potential applications are discussed.     

Detection of nitrobenzene and related aromatics by reduction and indophenol formation

The detection of nitrobenzene is based on its partial reduction with zinc in slightly acidic medium to yield phenylhydroxylamine, acid-catalyzed rearrangement to form a mixture of 2- and 4-aminophenol, and formation of indophenol blue by 4-aminophenol on oxidative coupling with an alkaline phenol solution. The limit of detection is 0.1 μg ml^?1 nitrobenzene in the test solution. A positive test is also given by 2- and 3-nitrotoluene but various other aromatics containing nitro groups do not interfere. The method was tested on wastewaters.     

Potential induced tuning of the luminescence of porous silicon: A simultaneous study of electroluminescence and photoluminescence emission

The voltage dependence of light emission from illuminated porous silicon samples immersed in solutions containing persulfate anions was studied. It is reported that the signal obtained is not simply the sum of the individual photoluminescence and electroluminescence signals. The ‘cross-talk’ observed is discussed in terms of a previously proposed mechanism of photoluminescence and electroluminescence potential tuning. It is shown that a mechanism involving radiative quenching by an Auger process is consistent with the results obtained.     

Photoassisted tuning of silicon nanocrystal photoluminescence

Silicon is a rather inefficient light emitter due to the indirect band gap electronic structure, requiring a phonon to balance the electron momentum during the interband transition. Fortunately, momentum requirements are relaxed in the 1-5 nm diameter Si crystals as a result of quantum confinement effects, and bright photoluminescence (PL) in the UV-vis range is achieved. Photoluminescent Si nanocrystals along with the C- and SiC-based nanoparticles are considered bioinert and may lead to the development of biocompatible and smaller probes than the well-known metal chalcogenide-based quantum dots. Published Si nanocrystal production procedures typically do not allow for the fine control of the particle size. An accepted way to make the H-terminated Si nanocrystals consists of anodic Si wafer etching with the subsequent breakup of the porous film in an ultrasound bath. Resulting H-termination provides a useful platform for further chemical derivatization and conjugation to biomolecules. However, a rather polydisperse mixture is produced following the ultrasonic treatment, leading to the distributed band gap energies and the extent of surface passivation. From the technological point of view, a homogeneous nanoparticle size mixture is highly desirable. In this study, we offer an efficient way to reduce the H-terminated Si nanocrystal diameter and narrow size distribution through photocatalyzed dissolution in a HF/HNO3 acid mixture. Si particles were produced using the lateral etching of a Si wafer in a HF/EtOH/H2O bath followed by sonication in deaerated methanol. Initial suspensions exhibited broad photoluminescence in the red spectral region. Photoassisted etching was carried out by adding the HF/HNO3 acid mixture to the suspension and exposing it to a 340 nm light. Photoluminescence and absorbance spectra, measured during dissolution, show the gradual particle size decrease as confirmed by the photoluminescence blue shift. The simultaneous narrowing of the photoluminescence spectral bandwidth suggests that the dissolution rate varies with the particle size. We show that the Si nanoparticle dissolution rate depends on the amount of light adsorbed by the particle and accounts for the etching rate variation with the particle size. Significant improvement in the PL quantum yield is observed during the acid treatment, suggesting improvement in the dangling bond passivation.     

Growth of silicon thin film by LPE on porous silicon bilayers

The fabrication of solar cells based on the transfer of a thin silicon film on a foreign substrate is an attractive way to realise cheap and efficient photovoltaic devices. The aim of this work is to realise a thin mono-crystalline silicon film on a double porous silicon layer in order to detach and transfer it on mullite. The first step is the fabrication of a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity layer and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer on to a low cost substrate. Liquid Phase Epitaxy (LPE) performed with indium (or In+Ga) in the temperature range of 950–1050°C leads to almost homogeneous layers. Growth rate is about 0.35 μm min⁻¹. Crystallinity of the grown epilayer is similar on porous silicon and on single crystal silicon. In this paper, we focus on the realisation of porous silicon sacrificial layer and subsequent LPE growth. This revised version was published online in July 2006 with corrections to the Cover Date.