Scintillation neutron detectors based on <Superscript>6</Superscript>Li-silica glass doped with cerium

The photoluminescence (PL), PL excitation, and PL decay kinetics of ⁶Li₂O-MgO-SiO₂-Ce glasses were studied using time-resolved VUV spectroscopy. The Ce³⁺ ion PL excitation spectrum contains a known group of structural bands at 4.4–5.2 eV caused by 4f → 5d transitions. Moreover, features at 6.4–7.7 eV were detected and their nature is discussed. At an exciting photon energy E_exc > 25 eV, the photon multiplication effect manifests itself. Based on ⁶Li-silica glasses, a scintillation neutron detector with improved parameters was developed and produced.     

Time-resolved luminescence spectroscopy of pure and doped with Ce3+ ions SrAlF5 crystals

The results of a study of time-resolved photoluminescence (PL) and energy transfer in both pure and doped with Ce³⁺ ions SrAlF₅ (SAF) single crystals are presented. The time-resolved and steady-state PL spectra in the energy range of 1.5–6.0 eV, the PL excitation spectra and the reflectivity in the energy range of 3.7–21 eV, as well as the PL decay kinetics were measured at 8.8 and 295 K. The lattice defects were revealed in the low temperature PL spectra (emission bands at 2.9 and 4.5 eV) in the undoped SAF crystals. The luminescence spectra of the doped Ce³⁺:SAF crystals demonstrate a new selective emission bands in the range of 3.7–4.5 eV with the exponential decay kinetics (τ ≈ 60 ns at X-ray excitation). These bands correspond to the d-f transitions in Ce³⁺ ions, which occupy nonequivalent sites in the crystal lattice.     

Low-temperature time-resolved vacuum ultraviolet luminescent spectroscopy of KH2PO4 crystals with defects

Low-temperature photoluminescence (PL) of unactivated KDP crystals under selective synchrotron excitation is for the first time measured with subnanosecond time resolution. Time-resolved PL (2–6 eV) and PL excitation (4–35 eV) spectra, as well as PL kinetics, are measured at 7 K. From the acquired experimental data, luminescent bands related to intrinsic defects of the KDP lattice are identified; in particular, the long-wave band at 2.6 eV is assigned to L defects, and the band at 3.5–3.6 eV is attributed to D defects. An efficient energy transfer over the hydrogen sublattice is shown to take place in KDP at low temperatures. It results in the efficient excitation of L and D center photoluminescence in the fundamental absorption region, at electron transitions to the bottom levels of the conduction band, corresponding to the states of the hydrogen atom. The band gap E _g is evaluated to be 8.0–8.8 eV.     

Luminescence properties of Li6GdB3O9:Ce crystal fibers upon their excitation in the range of 4d → 4f core transitions

We have investigated UV luminescence with a subnanosecond time resolution of Li₆GdB₃O₉:Ce crystal fibers upon their ultrasoft X-ray selective excitation at 10 and 293 K in the range of 4d → 4f core transitions. We have revealed an intense fast-decaying subnanosecond luminescence component, which is caused by a high local density of electronic excitation and Auger core hole relaxation processes, and modulation of the luminescence excitation spectrum by an absorption band of the 4d–4f photoionization giant resonance in the energy range 135–160 eV.     

Photoluminescence of CaGa<Subscript>2</Subscript>S<Subscript>4</Subscript>:Pr Polycrystals

The photoluminescence (PL) and PL excitation spectra of CaGa₂S₄ polycrystals doped with praseodymium are studied in the regions of the activator absorption and the fundamental absorption of the host. It is found that the PL excitation spectrum consists of two regions: broadband absorption in the range of 200-380 nm corresponding to the fundamental absorption of the host and the narrow-band absorption of the dopant in the range of 430–515 nm. The luminescence spectra are different for different excitation wave-lengths, which occurs because Pr³⁺ ions substitute divalent cations occupying different crystallographic positions in the host crystal lattice.     

PbWO<Subscript>4</Subscript> crystal for laser energy accumulation and transformation

The picosecond interband two-photon laser excitation of PbWO₄ crystals at a temperature of 10 K leads to electronic excitation energy accumulation, which results in almost 100% induced absorption in the 450–750 nm spectral range. The relaxation time of this induced absorption exceeds 100 min. The electronic excitation energy accumulated in the PbWO₄ crystal at T = 10 K excites the intrinsic luminescence with a decay time longer than 45 min. The decay kinetics and the spectra of the intrinsic luminescence of the PbWO₄ crystal at a temperature of 10 K were measured under two-photon and single-photon excitation. The luminescence under two-photon and single-photon excitation revealed a difference in the structure of the spectra.     

Electronic excitations and luminescence in CsLiB6O10 crystals

The paper presents the results of a complex investigation into the dynamics of electronic excitations in the CsLiB₆O₁₀ crystal (CLBO) by low-temperature luminescence VUV spectroscopy with subnanosecond time resolution under photoexcitation by synchrotron radiation. Strong broad-band low-temperature photoluminescence (PL) of the CLBO crystal has been revealed. Data on the PL decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra at 9.3 and 295 K are obtained. It is shown that the intrinsic PL of CsLiB₆O₁₀ in the 3.5-eV range is caused by radiative annihilation of self-trapped excitons. The channels of creation and decay of relaxed and unrelaxed excitons in cesium lithium borate are discussed. The band gap of CLBO is estimated as E _g≈8.5 eV. A monotonic increase in the excitation efficiency of intrinsic CLBO luminescence at exciting photon energies above 19 eV is identified as the photon multiplication process.     

Luminescence of LaBr3: Ce,Hf crystals under photon excitation in the ultraviolet,vacuum ultraviolet,and X-ray ranges

This study has been carried out using synchrotron radiation, time-resolved luminescence ultraviolet and vacuum ultraviolet spectroscopy, optical absorption spectroscopy, and thermal activation spectroscopy. It has been found that, in scintillation spectrometric crystals LaBr₃: Ce,Hf characterized by a low hygroscopicity, along with Ce³⁺ centers in regular lattice sites, there are Ce³⁺ centers located in the vicinity of the defects of the crystal structure. It has also been found that the studied crystals exhibit photoluminescence (PL) of new point defects responsible for a broad band at wavelengths of 500–600 nm in the PL spectra. The minimum energy of interband transitions in LaBr₃ is estimated as E _g ～ 6.2 eV. The effect of multiplication of electronic excitations has been observed in the range of PL excitation energies higher than 13 eV (more than 2E _g ). Thermal activation studies have revealed channels of electronic excitation energy transfer to Ce³⁺ impurity centers.     

Photoconductive properties of some chemically deposited (Cd–Pb)s films

Films of (Cd–Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I_PC (saturated photocurrent)/I_DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band-gaps are determined from the two spectra. Diffraction lines in XRD studies are associated to CdS and PbS, and according to SEM studies layered growth of the films takes place. PL of samarium doped (Cd–Pb)S films shows an emission peak in the green-yellow region under 365?nm excitation. The PL brightness decreases with temperature.     

Ultraviolet luminescence of Li6Gd(BO3)3: Ce crystals under selective excitation in the region of 4d → 4f transitions

The subnanosecond time-resolved ultraviolet luminescence of Li₆Gd(BO₃)₃: Ce crystals under selective excitation by ultrasoft X-rays in the region of the 4d??4f core transitions at temperatures of 7 and 293 K has been investigated for the first time. The performed investigation has revealed the following features: an intense fast component of the luminescence decay kinetics in the subnanosecond range due to the high local density of electronic excitations and the processes of Auger relaxation of the core hole; the modulation of the luminescence excitation spectrum by the ??giant resonance?? absorption band of the 4d-4f photoionization in the energy range 135?C160 eV; and a new broad luminescence band at an energy of 4.44 eV due to the direct radiative recombination between the genetically related electron in the states of the conduction band bottom and hole in the 4f ground state of the Ce³⁺ ion.     

Absorption of Dy3+ and Nd3+ ions in BaR 2F8 single crystals

The Dy³⁺ absorption and excitation spectra of BaY₂F₈ and BaYb₂F₈ single crystals are investigated in the ultraviolet, vacuum ultraviolet, and visible ranges at a temperature of 300 K. These crystals exhibit intense broad absorption bands due to the spin-allowed 4f-5d transitions in the range (56–78) × 10^?3 cm^?1 and less intense absorption bands that correspond to the spin-forbidden transitions in the range (50–56) × 10^?3 cm^?1. The Nd³⁺ absorption spectra of BaY₂F₈ single crystals are studied in the range (34–82) × 10^?3 cm^?1 at 300 K for different crystal orientations.     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Luminescence spectroscopy of Ce3+-doped ABaPO4 (A=Li, Na, K) phosphors

Ce³⁺ doped ABaPO₄ (A=Li, Na, K) phosphors were prepared by conventional high temperature solid-state reaction. The phosphors were investigated by XRD, photoluminescence excitation and emission spectra, and luminescence decay curves. The five 5d levels corresponding to the 4f¹→4f⁰5d¹ transition of Ce³⁺ ions were identified. The spectroscopic parameters, e.g., the 5d barycenter, the crystal-field splitting, and the Stokes shift, were discussed. LiBaPO₄:Ce³⁺ phosphor could be efficiently excited by the near-UV lights (330–420 nm) and showed a broad emission band in the range of 430–620 nm with the maximum wavelength at 468 nm. In contrast, Ce³⁺-doped NaBaPO₄ and KBaPO₄ showed only excitation bands in a limited UV region (230–370 nm) and have blue emission at 385 nm and 416 nm, respectively. The temperature quenching of luminescence and the chromaticity coordinates were reported. The luminescence properties were discussed by analyzing the crystal structure and the local surroundings of Ce³⁺ ions on the Ba²⁺ sites.     

Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)

Optical transitions in self-organized InAs quantum dots (QDs) grown on In_0.52Al_0.48As layer lattice matched to InP(0 0 1) substrate, have been studied by continuous wave (cw) photoluminescence (PL) and time-resolved PL. The dependence of the PL transition on excitation power and photoluminescence excitation measurements clearly shows that the multi-component cw-PL spectrum is related to emission coming from ground and related excited states of QDs with heights varying by monolayer fluctuations. While decay times measured by time-resolved PL are in the nanosecond range for the ground states, shorter decay times related to relaxation of carriers down directly to the ground state are determined for the excited states.     

Optical and photoconductivity studies of Cu2O nanowires synthesized by solvothermal method

The solvothermal method has been employed to synthesize cuprous oxide (Cu₂O) nanowires using a precursor of cupric acetate monohydrate (CuAc₂) and ethylene glycol (EG) as the solvent. By optimizing the reaction temperature and reaction time, we have prepared Cu₂O nanowires with a diameter of approximately 7 nm and a length of several nanometers. The UV-visible absorption spectrum of the nanowires shows obvious blueshift compared to the bulk Cu₂O, which arises from the quantum confinement effect of the excitonic transition expected for Cu₂O nanowires. Here we also report the role of different excitation energies on the photoluminescence (PL) properties of the Cu₂O nanowires by steady-state and time-resolved PL spectroscopy. The decay times vary from nanoseconds to picoseconds. Decay kinetics indicates that the average lifetime 〈τ〉 of the nanowires increases with increasing excitation energy. The current-voltage (I-V) curves of the nanowires give the photocurrent density 16 times larger than the dark current density.     

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition

Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300 K, the samples annealed at 600 °C for 30 min showed clear red-emission lines due to the intra-4f shell transition of ⁵D₀→⁷F_J (J=0–4) in Eu³⁺. In photoluminescence excitation (PLE) spectra, the PL was observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of ⁷F₀–⁵D₃ and ⁷F₀–⁵D₂ transitions in Eu³⁺ (direct excitation). The PL lifetime under the indirect excitation was shorter than that under the direct excitations. These PL properties revealed that the energy transfer from ZnO host to Eu³⁺ was accompanied under indirect excitation.     

Time resolved photoluminescence spectra of a-As2S3

Time resolved photoluminescence (PL) spectra of a-As₂S₃ are reported in the range 0–100 nsec after the excitation light pulse. After a very careful correction for apparatus spectral response, there is no large shift of the PL line as previously reported, but only an increase of the high energy side of the PL spectrum at short times. These results are discussed in terms of models with or without rearranged point defects.     

Ultraviolet-visible spectroscopic characterization of lanthanum beryllate crystals doped with Er,Nd, or Pr ions

Spectroscopic characterization of lanthanum beryllate La₂Be₂O₅ (BLO) single crystals doped with trivalent ions of Eu, Nd or Pr, was carried out in the ultraviolet-visible spectral range using synchrotron radiation spectroscopy in combination with conventional optical absorption and luminescence spectroscopy techniques. On the basis of the obtained data, the energy level diagram for these trivalent impurity ions in BLO host lattice was developed; the optical and electronic properties of the crystals were determined; the possibility of the 4f-4f, 4f-5d and charge transfer transitions was analyzed; spectroscopic properties of the lattice defects formed during the introduction of trivalent impurity ions in the BLO host lattice, were investigated. We found that the lattice defects are responsible for a wide-band photoluminescence (PL) in the energy region of 400–600 nm. The most efficient excitation of the defect photoluminescence in the energy gap of BLO occurs in broad PL excitation-bands at 270 and 240 nm. The PL intensity of defects depends on the type of impurity ion and increases in the sequence: Pr-Nd-Er.     

Scintillation response of Y3Al5O12:Pr3+ single crystal scintillators

In this paper we present the photoluminescence (PL) and scintillation response of Pr³⁺-doped Y₃Al₅O₁₂ (YAG:Pr) single crystals grown by the Czochralski method with different Pr³⁺ concentrations of 0.16, 0.33, and 0.65 mol%. PL spectra and decay curves were measured for both the fast 5d → 4f and slow 4f → 4f emissions. The PL decay times were evaluated which evidence concentration quenching especially in ¹D₂ → ³H₄ emission for the highest Pr³⁺ concentration. Light yield (LY) of 15,600 photons per MeV and energy resolution of 6.4% at 662 keV γ-rays were obtained with the YAG:Pr (0.33%) crystal. The LY non-proportionality and energy resolution versus γ-ray energy were measured and the intrinsic resolution was calculated. A good proportionality of the LY was found within 7% over the energy range from 1274.5 keV down to 32 keV. The estimated photofraction in the pulse height spectra of 320 and 662 keV γ-rays was also determined and compared with the theoretical one calculated using WinXCom program.     

Optical excitation and emission processes of Si-QD/SiO2 multilayer films with different SiO2 layer thicknesses

Si-rich oxide/SiO₂ multilayer films with different SiO₂ layer thicknesses have been deposited by the plasma enhanced chemical vapor deposition technique, and crystallized Si quantum dot (Si-QD)/SiO₂ multilayer films are obtained after annealing at 1100 ^°C. The photoluminescence (PL) intensity of the multilayer films increases significantly with increasing SiO₂ layer thickness, and the PL peak shifts from 1.25 eV to 1.34 eV. The PL excitation spectra indicate that the maximal PL excitation intensity is located at 4.1 eV, and an excitation–transfer mechanism exists in the excitation processes. The PL decay time for a certain wavelength is a constant when the SiO₂ thickness is larger than 2 nm, and a slow PL decay process is obtained when the SiO₂ layer is 1 nm. In addition, the PL peak shifts toward high energy with decreasing temperature only when the SiO₂ layer is thick enough. Detailed analyses show that the mechanism of PL changes from the quantum confinement effect to interface defects with decreasing SiO₂ layer thickness.