高功率垂直外腔面发射半导体激光器增益设计及制备

垂直外腔面发射半导体激光器(vertical external cavity surface emitting laser, VECSEL)兼具高功率与良好的光束质量,是半导体激光器领域的持续研究热点之一.本文开展了光抽运VECSEL最核心的多量子阱增益区设计,对量子阱增益光谱及其峰值增益与载流子浓度及温度等关系进行系统的理论优化,并对5种不同势垒构型的量子阱增益特性进行对比,证实采用双侧GaAsP应变补偿的发光区具有更理想的增益特性.对MOCVD生长的VECSEL进行器件制备,实现了VECSEL在抽运功率为35 W时输出功率达到9.82 W,并且功率曲线仍然没有饱和;通过变化外腔镜的反射率, VECSEL的激光波长随抽运功率的漂移系数由0.216 nm/W降低至0.16 nm/W,证实外腔镜反射率会影响VECSEL增益芯片内部热效应,从而影响VECSEL激光输出功率.所制备VECSEL在两正交方向上的发散角分别为9.2°和9.0°,激光光斑呈现良好的圆形对称性.     

Passively modelocked surface-emitting semiconductor lasers

This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.     

Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme

We propose an efficient coherent power scaling scheme, the multichip vertical-external-cavity surface-emitting laser (VECSEL), in which the waste heat generated in the active region is distributed on multi-VECSEL chips such that the pump level at the thermal rollover is significantly increased. The advantages of this laser are discussed, and the development and demonstration of a two-chip VECSEL operating around 970 nm with over 19 W of output power is presented.     

Experimentally verified pulse formation model for high-power femtosecond VECSELs

Optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible.     

3–4.5 μm continuously tunable single mode VECSEL

We present continuously tunable Vertical External Cavity Surface Emitting Lasers (VECSEL) in the mid-infrared. The structure based on IV?CVI semiconductors is epitaxially grown on a Si-substrates. The VECSEL emit one single mode, which is mode hop-free tunable over 50?C100?nm around the center wavelength. In this work, two different devices are presented, emitting at 3.4???m and 3.9???m, respectively. The lasers operate near room temperature with thermoelectric stabilization. They are optically pumped, yielding an output power >10?mW_p. The axial symmetric emission beam has a half divergence angle of <3.3^°.     

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

Modeling of vertical external cavity semiconductor laser with MQW resonant structure

Numerical model is developed for modeling pulsed operation of a vertical external cavity semiconductor laser (VECSEL) with a resonant gain structure. Properties of optical modes for compound resonator formed by Bragg reflector, chip boundary and external spherical mirror were studied. For above threshold operation carrier density in each of quantum wells (QW) obeys non-linear diffusion equation with a source supplied by electron-hole pairs generated in barrier layers by pump radiation or fast electron beam. A new iteration procedure for round-trip operator evaluation was developed, which provides linear growth of computation time with the number of QWs. Results of numerical simulations are reported for a VECSEL comprising 25 QW in resonant configuration and the output spherical mirror with curvature radius 3 cm. Variation of distance to the external mirror is found to result in notable changes in power and optical quality of the output beam. The decisive role of gain and index non-linearity in these changes is identified. A range of values of distance to external mirror is found where iterative procedure does not converge. In another range, the resulting solution depends on the initial conditions for the iteration procedure.     

CW and passive Q-switching of 1331-nm Nd:GGG laser with Co<Superscript>2+</Superscript>:LMA saturable absorber

In this paper, the output performances at 1331 nm in continuous-wave (CW) operation and the passive Q-switching regime of a Nd:Gd₃Ga₅O₁₂(Nd:GGG) laser crystal have been investigated under pumping with diode lasers. A maximum CW output power of 1.5 W was reached at an incident pump power of 7.5 W; the overall optical-to-optical efficiency and the slope efficiency with respect to the pump power were 21.5% and 19.4%, respectively. The passive Q-switching regime was achieved with Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) saturable absorber (SA) crystals. A maximum average output power of 183 mW was recorded with a Co²⁺:LMA SA with initial transmission T _i of 90%. The pulse energy was 18.7 μJ and the pulse duration was 26.1 ns, which correspond to a pulse peak power of 0.7 kW. With a Co²⁺:LMA SA with T _i=81%, the average power decreased to 131 mW. However, the pulse energy increased to 21.4 μJ, the pulse duration was 16.4 ns and the pulse peak power increased to 1.3 kW.     

On the design of electrically pumped vertical-external-cavity surface-emitting lasers

Vertical-external-cavity surface-emitting lasers (VECSELs) yield an excellent beam quality in conjunction with a scalable output power. This paper presents a detailed numerical analysis of electrically pumped VECSEL (EP-VECSEL) structures. Electrical pumping is a key element for compact laser devices. We consider the optical loss, current confinement, and device resistance. The main focus of our investigation is on the achievement of an adequate radial carrier distribution for fundamental transverse mode operation. It will be shown that a trade off between the conflicting optical and electrical optimization has to be found and we derive an optimized design resulting in guidelines for the design of EP-VECSELs which are compatible with passive mode locking. PACS 42.55.Px; 42.60.By; 85.30.De     

Mode-locked diode-pumped vanadate lasers operated with PbS quantum dots

The use of glasses doped with PbS nanocrystals as intracavity saturable absorbers for passive Q-switching and mode locking of c-cut Nd:Gd_0.7Y_0.3VO₄, Nd:YVO₄, and Nd:GdVO₄ lasers is investigated. Q-switching yields pulses as short as 35 ns with an average output power of 435 mW at a repetition rate of 6–12 kHz at a pump power of 5–6 W. Mode locking through a combination of PbS nanocrystals and a Kerr lens results in 1.4 ps long pulses with an average output power of 255 mW at a repetition rate of 100 MHz.     

Thermal lensing, thermal management and transverse mode control in microchip VECSELs

Finite-element analysis is used to explore the practicalities and power-scaling potential of quasi-monolithic microchip vertical-external-cavity surface-emitting lasers: thermal lensing and its implications for transverse mode control are emphasised. A comparison is made between the use of sapphire and diamond heat spreaders. The experimental characterisation of an InGaAs/sapphire microchip VECSEL is presented as an exemplar system and the factors affecting slope efficiency, threshold and output power roll-over are examined. By comparing experimental measurements with the finite-element model, the key role of thermal lensing in transverse mode control is demonstrated. PACS 42.55.Xi; 42.55.Rz; 42.55.Px     

Intracavity frequency-doubled green vertical external cavity surface emitting laser

An intracavity frequency-doubled vertical external cavity surface emitting laser (VECSEL) with green light is demonstrated. The fundamental frequency laser cavity consists of a distributed Bragg reflector (DBR) of the gain chip and an external mirror. A 12-mW frequency-doubled output has been reached at 540 nm with a nonlinear crystal LBO when the fundamental frequency output is 44 mW at 1080 nm. The frequency doubling efficiency is about 30%.     

光泵浦双反射带半导体激光器的热效应有限元分析

给出了808 nm/980 nm双反射带布拉格反射镜的反射谱线,建立了光泵浦双反射带半导体激光器件的热学模型及其内部热载荷分布形式,运用有限元分析方法,详细分析了双反射带光泵浦半导体激光器件的热学特性。结果表明,对于激射光反射率为99.96%的单反射带和双反射带布拉格反射镜结构的垂直外腔面发射半导体激光器件,前者的散热性能较好,而后者的最大温升明显低于前者。本文的分析结果可为半导体激光器件的结构优化和实验研究提供理论参考。     

Femtosecond 5-W Yb:KGW slab laser oscillator pumped by a single broad-area diode and its application as supercontinuum source

We demonstrate a novel and very simple design for an efficient high-power femtosecond Yb:KGW slab laser oscillator. The laser is capable of producing output powers of more than 5 W at 44-MHz repetition rate and pulse widths as short as 161 fs with a nearly diffraction limited beam and an optical-to-optical efficiency of more than 28%. The laser is pumped by a single broad-area laser diode and employs simple pump optics consisting of three lenses. The laser output power is distributed between two beams and single or combined outputs are discussed. In combination with a tapered fiber the laser was used to generate femtosecond supercontinua with up to 1.3-W average power and spectra spanning from 420 to over 1750 nm.     

Pulsed solid-state laser system with fiber phase conjugation and 315 W average output power

Solid-state laser sources with high average output power and high beam quality are required for numerous applications in industry and science. To improve the beam quality, stimulated Brillouin scattering (SBS) mirrors based on optical phase conjugation are used to compensate for phase distortions in master oscillator power amplifier (MOPA) systems. SBS phase conjugation in commercially available silica optical fibers facilitates the construction of high-power solid-state laser systems with high beam quality. Here we present a flash lamp-pumped, passively Q-switched Nd:YAP system which delivers an average output power of 315 W with M²=2.6 at a wavelength of 1.08 μm. Received: 11 July 2001 / Revised version: 28 September 2001 / Published online: 23 November 2001     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

All-solid-state cw mode-locked picosecond KTiOAsO4 (KTA) optical parametric oscillator

4 (KTA) optical parametric oscillator (OPO) synchronously pumped by a cw diode-pumped mode-locked Nd:YVO₄ oscillator–amplifier system. The laser system (pumped by 84 W of cw 808-nm diode radiation) generates 7-ps-long pulses at 1.064 μm with a repetition rate of 83.4 MHz and an average power of 29 W. The OPO, synchronously pumped by the 1.064-μm laser pulses, consists of a 15-mm-long KTA crystal (cut for type II noncritical phase-matching) in a folded signal resonant linear resonator. The average powers of the 1.54-μm signal radiation and the 3.47-μm idler radiation are 14.6 W and 6.4 W, respectively. The total OPO output of 21 W corresponds to an internal efficiency of 75%. The experimental investigations include measurements of the OPO output power (and its dependence on the pump power, the transmission of the output coupler, and the resonator length) and of the pulse properties (such as pulse duration and spectral width). The measured results are in good agreement with the predictions of a numerical analysis based on a split-step Fourier method. Received: 4 May 1998     

Diode-pumped laser with Yb:YAG single-crystal fiber grown by the micro-pulling down technique

Laser emission obtained from an Yb:YAG single-crystal fiber directly grown by the micro-pulling down technique is demonstrated for the first time. We achieved 11.2 W of continuous wave (CW) output power at 1031 nm for 55 W of incident pump power at 940 nm. In the Q-switched regime, we obtained pulses as short as 17 ns, for an average power of 2.3 W at 2 kHz corresponding to an energy of 1.15  mJ. In both cases, the M ² factor was 2.5. This single-crystal fiber showed performance similar to a standard rod elaborated by the Czochralski method. The potential of Yb³⁺-doped single-crystal fibers is presented for scalable high-average and high-peak-power laser systems.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

High-power resonantly diode-pumped CW Er<Superscript>3+</Superscript>:YAG laser

Using high-spatial and -spectral brightness laser diodes, a resonantly pumped high-power continuous-wave (CW) Er³⁺:YAG laser with up to 9 W of output power could be realized. Due to the lower upconversion loss in the 0.5% Er³⁺-doped crystal, intrinsic efficiencies of up to 64.3% and an optimum outcoupling of ∼20% were found. The output power was compared to quasi-three-level theory with good agreement. In an optimized cavity design a mode fill efficiency of ∼95% was achieved.