The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Surface morphology of poly(cyano-p-xylylene) thin films

The surface morphology of poly(cyano-p-xylylene) thin films of different thicknesses (25–1500 nm or more than 5 μm) that were synthesized by vapor-deposition polymerization on the substrate surface in the temperature range from −22 to +35°C has been studied by atomic force microscopy. The surface topography is quantified through analysis of the height-height correlation function. The surface of all films is characterized by a similar granular morphology with a transverse size of granules of 50–500 nm. The surface morphology changes with the polymerization temperature (the substrate temperature) and the film thickness. The effect of film annealing on its surface morphology is considered. It has been established that annealing at 200°C leads to a change in the surface morphology of the films. Original Russian Text ? A.I. Buzin, D.S. Bartolome, K.A. Mailyan, A.V. Pebalk, S.N. Chvalun, 2006, published in Vysokomolekulyamye Soedineniya, Ser. A, 2006, Vol. 48, No. 9, pp. 1640–1646. This work was supported by the Russian Foundation for Basic Research (project nos. 03-03-32665 and 03-03-32634) and the Russian Science Support Foundation.     

Surface morphology and biological activity of protein thin films produced by electrospray deposition

Protein thin films were prepared by the electrospray deposition (ESD) method from aqueous solutions of alpha-lactalbumin (alpha-LA) at different concentrations, and their surface morphologies and biological activities were characterized. The surface morphologies of the deposited films were observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM images showed that the film surfaces had a fine porous structure, in which the pore diameters ranged from 40 to 600 nm. The biological activities of the cross-linked protein films were tested by the mechanochemical method. The response to calcium ion (Ca(2+)) demonstrated that the biological activity of the films was preserved. These results indicate that the ESD method is potentially useful for the fabrication of active protein thin films. The freestanding protein thin films prepared by ESD and postdeposition cross-linking provide novel options for protein-based biomaterials.     

Evaluation of the structural,optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics

Aluminum doped zinc oxide (AZO) thin films for electrode applications were deposited on glass substrates using chemical bath deposition (CBD) method. The influence of deposition time on the structural, morphological, and opto-electrical properties of AZO films were investigated. Structural studies confirmed that all the deposited films were hexagonal wurtzite structure with polycrystalline nature and exhibited (002) preferential orientation. There is no other impurity phases were detected for different deposition time. Surface morphological images shows the spherically shaped grains are uniformly arranged on to the entire film surface. The EDS spectrum confirms the presence of Zn, O and Al elements in deposited AZO film. The observed optical transmittance is high (87%) in the visible region, and the calculated band gap value is 3.27 eV. In this study, the transmittance value is decreased with increasing deposition time. The room temperature PL spectrum exposed that AZO thin film deposited at (60 min) has good optical quality with less defect density. The minimum electrical resistivity and maximum carrier concentration values were observed as 8.53 × 10⁻³(Ω cm) and 3.53 × 10¹⁸ cm⁻³ for 60 min deposited film, respectively. The obtained figure of merit (ϕ) value 3.05 × 10⁻³(Ω/sq)^{- 1} is suggested for an optoelectronic device.     

Structural and optical properties of TiO2 thin films prepared by spin coating

Transparent semiconducting thin films of titanium oxide (TiO₂) were deposited on glass substrates by the sol–gel method and spin-coating technique. The physical properties of the prepared films were studied as a function of the number of spun-cast layers. The microstructure and surface morphology of the TiO₂ films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), with respect to the film thickness. The XRD analysis reveals that the films are polycrystalline with an anatase crystal structure and a preferred grain orientation in the (101) direction. The morphological properties were investigated by AFM, which shows a porous morphology structure for the films. The optical properties of the films were characterized by UV–Visible spectrophotometry, which shows that the films are highly transparent in the visible region and their transparency is slightly influenced by the film thickness, with an average value above 80 %. The dependence of the refractive index (n), extinction coefficient (k), and absorption coefficient (α) of the films on the wavelength was investigated. A shift in the optical band gap energy of the films from 3.75 to 3.54 eV, as a function of the film thickness, has been observed.     

Optical and electrical properties of copper-doped nano-crystallite CdO thin films

Thin films of Cu-doped CdO (CdO:Cu) with different Cu% content were prepared in high vacuum on glass and Si substrates. The samples were characterised X-ray diffraction (XRD), optical spectroscopy, scanning electron microscope (SEM), and dc-electrical measurements. The XRD study reveals the formation of single crystalline phase CdO:Cu of CdO structure with a preferential [111] orientation. However, with increasing of Cu% content, the crystal structure was gradually deteriorated. SEM study shows formation of granular structure with rice shape grains of average size ∼500 nm. The optical study shows that Cu doping increased the films transparency with a slight blueshift for the bandgap. The calculated optical constants for pure and Cu-doped CdO were analysed with Forouhi–Bloomer (FB), Wemple–Didomenico (WD), and Spitzer–Fan (SF) models. Good agreements were obtained between electrical and optical (through SF model) measurements. The electrical measurements show that the utmost enhancement in mobility (82.5 cm²/V s) and conductivity (1428.6 S/cm) was found with 2.3% Cu sample. The optoelectronic study was analysed through the available BGW and BGN models that show close theoretical to the experimental results. In general, the films of CdO prepared with light Cu doping have optical and electrical characteristics suitable for various applications in material sciences and optoelectronic devices.     

Comparison characterization of copper selenide thin layers prepared on polyamide 6 films by sorption-diffusion method

Some earlier synthesized copper selenide (Cu _x Se) layers formed on the surface of polyamide 6 by sorption-diffusion method using potassium selenotrithionate (K₂SeS₂O₆) as precursor of selenium were characterized by the XRD, XPS and SEM methods. According to the results of the SEM studies, the most uniform Cu _x Se layers form at the 2.5 h polyamide seleniumized duration at the temperature of 60°C. The thickness of layers, which dependeds on the duration of seleniumization, changed in the range of 0.8–3.2 µm. The XRD patterns of not previously studied Cu _x Se layers showed their phase composition of six copper selenides: Cu₂Se, two phases of CuSe₂, Cu₃Se₂, berzellianite, Cu_2-x Se, and bellidoite Cu₂Se. Analysis of the XRD and XPS data shows that the macrostructure and composition of the Cu_xSe layers depend on the conditions of formation of these layers.      

Electronic transport and optical properties of indium oxide thin films prepared by thermal oxidation

Indium oxide (In₂O₃) thin films were prepared using thermal oxidation of metallic films. Indium metallic thin films were deposited onto glass substrates, by vacuum thermal evaporation. Optical and electronic transport properties of thermally oxidized In₂O₃ films were investigated and these properties were correlated with their preparation conditions, more exactly with oxidation temperatures (T_ox = 623 K, 673 K and 700 K, respectively). Structural analysis, investigated by X-ray diffraction and electron diffraction, reveals that the obtained films possess a polycrystalline structure. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The electronic transport mechanism, in respective films, is discussed in terms of crystallite boundary trapping, proposed by Seto. Some characteristic parameters such as energy barrier, impurity concentration, distribution of interface states, were determined. Transmission and reflection spectra were recorded and by using the values of these coefficients, some optical parameters were calculated (absorption coefficient, optical band gap, refractive index).     

Selective electroless deposition of copper on organic thin films with improved morphology

We have investigated the selective electroless deposition (ELD) of Cu on functionalized self-assembled monolayers (SAMs). Previous studies have demonstrated that Cu deposits on -COOH and -CH(3) terminated SAMs using ELD. However, the deposited films were rough and contained irregular crystallites. Further, the copper penetrated through the film. In this Article, we demonstrate that copper can be selectively deposited on -COOH terminated SAMs with improved morphology and without penetration of copper through the organic layer. The method employs a Cu(II) seed layer and an additive, adenine or guanine. We demonstrate the efficacy of the technique on photopatterned -CH(3)/-COOH SAMs. Copper is observed to deposit only atop the -COOH terminated SAM area and not on the -CH(3) terminated SAM. The use of a Cu(II) seed layer increased the Cu ELD rate on both -COOH and -CH(3) terminated SAMs. The deposited copper layer strongly adheres to the -COOH terminated SAMs because the copper layer nucleates at Cu(2+)-carboxylate complexes. In contrast, the deposited copper layer can easily be removed from the -CH(3) terminated SAM surface because there is no specific copper-surface interaction. The additives adenine and guanine mediate the interaction of Cu(2+) and the deprotonated -COOH terminated SAMs via the formation of additive-carboxylate complexes. These complexes lead to significantly reduced copper penetration through the SAM. In the case of adenine, the diffusion of copper through the organic film was eliminated. This new technique for copper deposition will facilitate the development of inexpensive molecular electronics, sensors, and other nanotechological devices.     

CO-sensing properties of undoped and doped tin oxide thin films prepared by electron beam evaporation

Undoped thin films of tin oxide and those doped with indium oxide and nickel oxides were deposited by electron beam evaporation. The effects of the film thickness and preparation conditions (films prepared with or without the presence of oxygen environment during deposition) on the optical and carbon monoxide sensing properties of the films were studied. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy and optical spectroscopy techniques. All the films were found to be amorphous. It was found that the sensitivity of the films to CO increased with the thickness and the porosity of the films. It was found that their selectivity to CO gas relative to CO₂ and SO₂ gases could be improved upon doping the films with indium (or nickel) oxide.     

Microstructure and optical properties of Ag-doped ZrO2 thin films prepared by sol gel method

Ag doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. The effect of Ag doping on tetragonal to monoclinic phase transformation of ZrO₂ at a lower temperature (500 °C) was investigated by X-ray diffraction. It is found that the Ag doping promotes the phase transformation. The phase transformation can be attributed to the increase in the tetragonal grain size and concentration of oxygen vacancies in the presence of the Ag dopant. Accumulation of the Ag atoms at the film surface and surface morphology changes in the films were observed by AFM as a function of varying Ag concentration. X-ray photoelectron spectroscopy gave Ag 3d and O 1s spectra on Ag doped thin film. The chemical states of Ag have been identified as the monovalent state of Ag⁺ ions in ZrO₂. The Ag doped ZrO₂ thin films demonstrated the tailoring of band gap values. It is also found that the intensity of room temperature photoluminescence spectra is suppressed with Ag doping.     

自组装成膜法制TiO2薄膜

采用有机分子自组装(Self-Assembly)成膜技术将硅烷偶联剂[(CH3O)3Si(CH2)3SH]组装在普通的玻片表面, 得到二维有的单层有机膜, 并将膜端基(SH)原位氧化为磺酸基(SO3H)。利用该功能基(SO3H)的吸附性, 从四氯化钛的水溶液中淀积制得了TiO2薄膜。X射线光电子能谱(XPS)和原子力显微镜(AFM)等研究显示, TiO2薄膜是均匀和连续的, 具有良好的透明性。     

Proton conductive thin films prepared by plasma polymerization

Proton conductive membranes were prepared as thin films of about 10 μm thickness by an ion beam assisted plasma polymerization process. Argon ions were generated in a high frequency plasma and accelerated towards a PTFE target where CF fragments were released as a consequence of the ion impact. Various sulfur components (SO₂, CF₃SO₃H or ClSO₃H) were added to achieve proton conductivity by the formation of sulfonic acid groups. The CF fragments combined with the sulfur components to form a coherent thin film on a substrate. Mass spectrometric investigations revealed, however, that sulfur oxygen compounds were extremely delicate towards reduction to sulfur carbon compounds like CS₂ or SCF₂. The best membrane conductivities (>10⁻⁴ S/cm) and highest ion exchange capacities (0.15 mmol/g) were achieved with chlorosulfonic acid involved in the plasma polymerization process. Ultra-thin layers of these of these plasma polymers (ca. 300 nm) were subsequently deposited onto Nafion^® membranes in order to suppress methanol permeation for a potential application in a direct methanol fuel cell (DMFC). The ratio of proton conductivity and methanol diffusion coefficient was employed for an assessment of the transport characteristics of the coated membrane. Diffusion coefficients were determined in a flow cell coupled to a mass spectrometer. The plasma polymer coating decreased both the methanol permeation and the proton conductivity. With a proton conductive plasma polymer coating the decrease of methanol diffusion could outweigh the loss of proton conductivity. Plasma coating offers a way to suppress methanol crossover in DMFCs and to maintaining the proton conductivity.     

Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process

Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (100) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (100). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature.     

Dry etching of copper phthalocyanine thin films: effects on morphology and surface stoichiometry

We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.     

Mononuclear precursor for MOCVD of HfO2 thin films

We report the precursor characteristics of a novel mononuclear mixed alkoxide compound [Hf(O(i)Pr)2(tbaoac)2] and its application towards MOCVD of HfO2 thin films in a production tool CVD reactor.     

Efficient maximization of coloration by modification in morphology of electrodeposited NiO thin films prepared with different surfactants

In this paper, we report on the nickel oxide (NiO) thin films potentiostatically electrodeposited onto indium-doped tin oxide-coated glass substrates by using two types of organic surfactants: (1) non-ionic: polyethylene glycol (PEG), polyvinylpyrrolidone (PVP) and (2) anionic: sodium dodecyl sulfate (SDS). An aqueous solution containing nickel sulfate precursor and potassium hydroxide buffer was used to grow the samples. The effect of organic surfactants on its structural, morphological, wettability, optical, electrochromic, and in situ colorimetry were studied using X-ray diffraction, scanning electron microscopy, contact angle, FT-IR spectroscopy, optical transmittance, cyclic voltammetry, and CIE system of colorimetry. X-ray diffraction patterns show that the films are polycrystalline, consisting of NiO cubic phase. A nanoporous structure with pore diameter of about 150–200 nm was observed for pure NiO. The films deposited with the aid of organic surfactants exhibits various surface morphological feature. PVP-mediated NiO thin film shows noodle-like morphology with well-defined surface area whereas, an ordered pore structure composed of channels of uniform diameter of about 60–80 nm was observed for PEG. A compact and smooth surface with nanoporous structure stem from SDS helps for improved electrochromic performance compared with that of NiO deposits from surfactant-free solution. Wetting behavior shows, transformation from hydrophilic to superhydrophilic nature of NiO thin films deposited with organic surfactant, which helps for much more paths for electrolyte access. The surfactant-mediated NiO produce high color/bleach transmittance difference up to 57% at 630 nm. On oxidation of NiO/SDS, the CIELAB 1931 2° color space coordinates show the transition from colorless to the deep brown state (L* = 84.41, a* = −0.33, b* = 4.41, and L* = 43.78, a* = 7.15, b* = 13.69), with steady decrease in relative luminance. The highest coloration efficiency of 54 cm² C⁻¹ with an excellent reversibility of 97% was observed for NiO/SDS thin films.