Ar离子辅助沉积对含氢类金刚石薄膜结构影响的计算机模拟

选C₂分子和一定量的H原子作为沉积源,Ar离子作为辅助沉积粒子,采用分子动力学(MD)方法模拟研究离子束辅助沉积(IBAD)生长类金刚石(DLC)膜的物理过程.给定Ar的入射能量并改变Ar的到达比(Ar/C),研究辅助沉积对DLC膜结构的影响;重点讨论Ar辅助沉积引起表面原子的瞬间活性变化对薄膜结构产生的影响.结果表明,由于Ar离子轰击引起的能量和动量的传递,增加了合成薄膜的SP³键含量,增大了合成薄膜的密度,加宽了沉积粒子和衬底的结合宽度,研究结果和实验观察一致,并从合成机理上给出一些定量解释.     

斜入射离子束辅助沉积对类金刚石薄膜结构影响的分子动力学模拟

采用分子动力学（MD）模拟方法,从原子尺度上研究了离子束辅助沉积（IBAD）类金刚石（DLC）薄膜过程中离子束入射角对薄膜结构的影响.重点讨论了不同的离子束入射角所对应的薄膜表面模型,平均密度和sp³键含量.结果表明,离子束斜入射加强了入射原子的水平动能,从而加强了原子水平迁移;Ar离子斜入射时C原子迁移率均比垂直入射大,薄膜密度和sp³键含量都比垂直入射小.不同的离子束入射角随着到达比和入射能的变化,对薄膜结构的影响不同.离子束斜入射时可以得到不同结构的膜. 关键词： 类金刚石薄膜 入射角 离子束辅助沉积 分子动力学模拟     

超薄类金刚石膜生长和结构特性的分子动力学模拟

利用分子动力学模拟方法研究了2—3nm厚的类金刚石(DLC)薄膜在金刚石基体(100)表面上的生长过程. 分析了用来表征沉积后无定型碳膜质量的重要结构特性，如sp³杂化比例、薄膜密度、径向分布函数等，计算结果和现有的实验结果基本一致. 不同入射原子能量对结构特性进而对薄膜性能有重要影响，入射原子能量在20—60eV时，薄膜可以获得最优性能. 载能原子入射是生长均匀、连续、致密固体薄膜的前提，稳定的中间区域对于保证薄膜优良的力学性质是必需的. 关键词： DLC膜 分子动力学模拟 3杂化比例')" href="#">sp³杂化比例     

基于原子运动模型的类金刚石薄膜生长机理研究

利用分子动力学模拟方法，从原子尺度上研究了类金刚石(DLC)薄膜生长过程. 按照运动特点把入射原子在表面的行为分为表面冷冻、迁移、注入和反弹等四种，并由此提出原子运动模型. 入射原子的表面行为对DLC薄膜的微观结构以及生长方式有重要影响. 其中原子水平迁移是薄膜热弛豫的主要途径，入射原子的注入和迁移行为相互竞争，决定了薄膜生长的模式和最终结构. 利用统计分析手段给出了入射能量对原子表面行为进而对薄膜结构的影响，加深了对DLC薄膜生长机理的认识.     

乙炔气体流量对纳米TiC类金刚石复合膜的化学结构及力学性能影响

采用离子注入与反应磁控溅射相结合的方法在钛合金及硅片基体表面上制备了纳米TiC类金刚石(DLC)复合膜.通过纳米压痕技术检测了薄膜的纳米硬度，显微划痕试验评估了薄膜的结合力.通过X射线光电子能谱及X射线衍射表征了薄膜的化学结构.结果表明，通过改变C₂H₂气体流量，可以达到控制薄膜中钛原子含量的目的，合适的C₂H₂气体流量可以在DLC膜中形成较多的纳米TiC晶粒，形成DLC包覆TiC晶粒的复合结构，使DLC膜力学性能得到明显提高.另外，划痕试验表明掺钛、先注入后沉积工艺都使薄膜的结合力得到了较大提高. 关键词： 纳米TiC类金刚石复合膜 类金刚石膜 力学性能     

利用强流脉冲离子束技术在室温下沉积类金刚石薄膜研究

利用强流脉冲离子束技术在Si基体上快速大面积沉积类金刚石(DLC)薄膜.电压为250kV,束流密度为250A·cm-2,脉宽为80—100ns,能流密度为5J·cm-2的离子束(主要由碳离子和氢离子组成)聚焦到石墨靶材上,使石墨靶材充分蒸发和电离,在石墨靶的法线方向的Si基体上沉积非晶的碳薄膜.Raman谱分析显示,所沉积薄膜为类金刚石薄膜.随着靶材与基体之间距离的减小,薄膜中sp3碳成分含量增加,同时硬度值也有所增大,并且薄膜的摩擦系数和表面粗糙度增加.x射线光电子能谱(XPS)分析显示薄膜中的sp3碳 关键词： 强流脉冲离子束 类金刚石薄膜 XPSRaman谱分析     

类金刚石和碳氮薄膜的电化学沉积及其场发射性能研究

利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CN_x薄膜，并 对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术，分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明：DLC膜和非晶CN_x的开启场分别为88和 10V/μm；并且在23V/μm的电场下，DLC膜和非晶CN_x膜的发射电流密度分别达到10 和037mA/cm². 关键词： 电化学沉积 类金刚石薄膜 x薄膜')" href="#">CN_x薄膜 场致电子发射     

氮对类金刚石薄膜的微观结构内应力与附着力的影响

采用原子力显微镜(AFM)、俄歇电子能谱(AES)和显微压痕分析等手段对射频等离子体增强化学气相沉积法制备的掺氮类金刚石(DLC：N)薄膜的微观结构和力学性能进行了研究.结果表明,随着含氮量的增加,DLC薄膜的AFM表面形貌中出现了几十纳米的颗粒,原子侧向力显微镜和AES分析表明这种纳米颗粒是x大于0.126的非晶氮化碳CN_x结构.这种非晶DLC/CN_x的纳米复合结构,减小了薄膜的内应力,从而提高了薄膜与衬底的附着力. 关键词： 类金刚石碳膜 微观结构 附着特性     

离子能量和沉积温度对离子束沉积碳膜表面形貌的影响

利用质量分离的低能离子束沉积技术,得到了非晶碳膜.所用离子能量为50—200eV,衬底温度从室温到800℃.在沉积的能量范围内,衬底为室温时薄膜为类金刚石,表面非常光滑;而600℃下薄膜主要是石墨成分,表面粗糙.沉积能量大于140eV,800℃时薄膜表面分立着高度取向的、垂直衬底表面、相互平行的开口碳管.用高分辨电子显微镜看到了石墨平面的垂直择优取向,离子的浅注入和应力是这种优先取向的主要机理. 关键词： 非晶碳 表面形貌 质量分离低能离子束     

C2团簇在金刚石(111)表面吸附结构的分子动力学模拟

利用Brenner(#2)半经验多体相互作用势和分子动力学模拟方法研究荷能的C₂在金刚石(111)表面的化学吸附过程.模拟300 K时,初始入射动能分别为1,20,30 eV的C₂团簇从6个不同位置轰击金刚石(111)表面,观察到C₂团簇在金刚石(111)表面形成的吸附结构,表面C原子键的打开以及C₂团簇与表面C原子成键等物理过程,并讨论不同入射位置和入射能量对沉积团簇的结构特性的影响.结果表明,对于表面不同的局部构型,C₂团簇发生不同的碰撞过程,C₂团簇入射能量的提高有利于成键过程的发生,从原子尺度模拟沉积机制.     

The influence of gas flow rate on the structural,mechanical, optical and wettability of diamond-like carbon thin films

In this research, diamond-like carbon (DLC) thin films were deposited on silicon substrates by radio-frequency plasma enhanced chemical vapor deposition method using gas mixture of CH₄ and Ar. The effect of different CH₄/Ar gas ratio on the structure, refractive index, transmission and hardness of the DLC thin films were investigated by means of Raman spectroscopy, ellipsometry, Fourier transform Infrared Spectroscopy and nano-indentation methods, respectively. Nuclear resonant reaction analysis was used to measure the amount of hydrogen and carbon in the thin films. Furthermore, wettability of the thin films was achieved by measuring of water contact angle (WCA). The results indicated that the structural properties of the diamond-like carbon thin films are strongly dependent on the composition of gas mixture. Based on ellipsometry results, refractive index of the thin films varied in the range of 1.89–2.06 at 550 nm. FTIR results determined that deposition of DLC thin films on silicon substrate led to an increase of the light transmission in IR region and these films have the potential to be used in silicon optics as the antireflective coatings in this region. Nano-indentation analysis showed that the thin films hardness changed in the range of 7.5–11 GPa. On the other hand hydrogen content and fraction of C?H bonds in the samples increased by an increase in the gas ratio of CH₄/Ar. Also, WCA measurements indicated that WCA for thin films with gas ratio of 3/7 is the most and equal to 79°.     

Atomic oxygen resistant behaviors of Mo/diamond-like carbon nanocomposite lubricating films

Mo doped diamond-like carbon (Mo/DLC) films were deposited on Si substrates via unbalanced magnetron sputtering of molybdenum combined with plasma chemical vapor deposition of CH₄/Ar. The microstructure of the films, characterized by transmission electron microscopy and selected area electron diffraction, was considered as a nanocomposite with nano-sized MoC particles uniformly embedded in the amorphous carbon matrix. The structure, morphology, surface composition and tribological properties of the Mo/DLC films before and after the atomic oxygen (AO) irradiation were investigated and a comparison made with the DLC films. The Mo/DLC films exhibited more excellent degradation resistant behaviors in AO environment than the DLC films, and the MoC nanoparticles were proved to play a critical role of preventing the incursion of AO and maintaining the intrinsic structure and excellent tribological properties of DLC films.     

Ferromagnetism in Mn-doped ZnO due to impurity bands

We have prepared quasi-homoepitaxial Zn_0.95Mn_0.05O-films on ZnO substrates by pulsed laser deposition. The thin films were characterized by in situ RHEED during growth, X-ray diffraction and reflectometry, as well as transmission electron microscopy (TEM). The magnetic properties have been analyzed by SQUID magnetometry and by measuring the anomalous Hall effect. By varying the growth conditions (substrate temperature: 200–600 ^∘C, deposition atmospheres: Ar, O₂) a different concentration of impurities has been generated. Our results show that the films are electron doped and exhibit a ferromagnetic coupling that depends on the impurity concentration.     

Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, transistors, and sensors. The growth of CNTs can be explained by interaction between small carbon patches and the metal catalyst. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH₃) as a pretreatment gas and acetylene (C₂H₂) as a carbon source gas. The grown CNTs and the pretreated DLC films were observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.     

Pulsed laser deposition of hard coatings in atmospheric air

A new laser plasma technique for non-vacuum deposition of thin films has been proposed and experimentally realized. It is based on the fact that the plasma plume, which occurs under ablation of a target in air by high-intensity short laser pulses, can penetrate through a dense gas environment without significant cooling at the distance of about 1 mm. The technique has been applied to deposit diamond-like carbon (DLC) coatings on stainless steel substrates using four different values of pulse duration: 10 ns, 300 ps, 5 ps and 130 fs. Optimization of different experimental parameters including distance between the target and the substrate, laser intensity and gases (He, Ar, N₂, compressed air) blown in the deposition zone, has been performed. The deposition rate in the experiments was estimated as 2–5×10^-4 nm/(cm²pulse) for the pulse energy of 1–4 mJ. The deposited amorphous carbon films with thickness of several hundred nanometers have shown high average nanohardness (10–25 GPa depending on the irradiation conditions) and good adhesion to substrates (60 MPa). According to X-ray electron spectroscopy analysis the films consist of both sp²- and sp³-bonded carbon and contain 3–7% of free oxygen in bulk. The mechanisms of DLC non-vacuum laser deposition are discussed. To demonstrate the large potential of this technique, the first results on deposition of titanium nitride using ablation of titanium in air with nitrogen jet assistance are also presented. PACS 52.38.Mf; 81.15.Fg; 81.05.Uw     

Low energy repetitive miniature plasma focus device as high deposition rate facility for synthesis of DLC thin films

Diamond-like carbon (DLC) films were deposited on Si (1 0 0) substrate using a low energy (219 J) repetitive (1 Hz) miniature plasma focus device. DLC thin film samples were deposited using 10, 20, 50, 100 and 200 focus shots with hydrogen as filling gas at 0.25 mbar. The deposited samples were analyzed by XRD, Raman Spectroscopy, SEM and XPS. XRD results exhibited the diffraction peaks related to SiO₂, carbon and SiC. Raman studies verified the formation amorphous carbon with D and G peaks. Corresponding variation in the line width (FWHM) of the D and G positions along with change in intensity ratio (I_D/I_G) in DLC films was investigated as a function of number of deposition shots. XPS confirmed the formation sp² (graphite like) and sp³ (diamond like) carbon. The cross-sectional SEM images establish the 220 W repetitive miniature plasma focus device as the high deposition rate facility for DLC with average deposition rate of about 250 nm/min.     

Effect of humidity and UV-assistance on the preparation of erbium doped alumina by aerosol MOCVD process

The effect of deposition temperature, relative humidity of carrier gas and UV-assistance on the growth of Erbium-doped aluminium oxide films has been studied. The films were prepared from aluminium acetylacetonate (Al(C₅H₇O₂)₃) and erbium (III) Tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Er(TMHD)₃) by UV and aerosol-assisted metal-organic chemical vapour deposition, using air with controlled humidity as carrier gas. Amorphous transparent films were deposited between 350 and 460 °C. It was observed that UV assistance allows a large decrease down to 5 kJ/mol of the activation energy of the deposition reaction for deposition temperatures lower than 420 °C. More over, depositing under high air humidity induced higher deposition rate, lower level of organic contamination and higher film density. Under these conditions Er-doped aluminium oxide films with a refractive index value of 1.71 were obtained at 460 °C.     

Effect of H2 and O2 plasma etching treatment on the surface of diamond-like carbon thin film

In this study, we investigated the surface properties of diamond-like carbon (DLC) films for biomedical applications through plasma etching treatment using oxygen (O₂) and hydrogen (H₂) gas. The synthesis and post-plasma etching treatment of DLC films were carried out by 13.56 MHz RF plasma enhanced chemical vapor deposition (PECVD) system. In order to characterize the surface of DLC films, they were etched to a thickness of approximately 100 nm and were compared with an as-deposited DLC film. We obtained the optimum condition through power variation, at which the etching rate by H₂ and O₂ was 30 and 80 nm/min, respectively. The structural and chemical properties of these thin films after the plasma etching treatment were evaluated by Raman and Fourier transform infrared (FT-IR) spectroscopy. In the case of as-deposited and H₂ plasma etching-treated DLC film, the contact angle was 86.4° and 83.7°, respectively, whereas it was reduced to 35.5° in the etching-treated DLC film in O₂ plasma. The surface roughness of plasma etching-treated DLC with H₂ or O₂ was maintained smooth at 0.1 nm. These results indicated that the surface of the etching-treated DLC film in O₂ plasma was hydrophilic as well as smooth.