Rate measurement of D(0)-->K+pi(-)pi(0) and constraints on D(0) -- D(0) mixing

We present an observation and time-integrated rate measurement of the decay D(0)-->K(+)pi(-)pi(0) produced in 9 fb(-1) of e(+)e(-) collisions near the Upsilon(4S) resonance. The signal is inconsistent with an upward fluctuation of the background by 4.9 standard deviations. We measured the time-integrated rate of D(0)-->K(+)pi(-)pi(0) normalized to the rate of D(0)-->K(+)pi(-)pi(0) to be 0.0043(+0.0011)(-0.0010) (stat)+/-0.0007 (syst). This decay can be produced by doubly Cabibbo-suppressed decays or by the D(0) evolving into a D(0) through mixing, followed by a Cabibbo-favored decay to K(+)pi(-)pi(0). We also found the CP asymmetry A = (9(+25)(-22))% be consistent with zero.     

The (22(0)1-00(0)0) Band of CO(2) at 6348 cm(-1): Linestrengths, Broadening Parameters, and Pressure Shifts

The (22(0)1-00(0)0) combination band of CO(2) around 6348 cm(-1) is studied with diode-laser spectroscopy, and linestrengths, collision-broadening parameters, and pressure shifts are determined. Linestrengths are modeled with a third-order Herman-Wallis expansion, and discrepancies with values reported in the literature are explained. Copyright 2000 Academic Press.     

Search for the lepton-flavor-violating leptonic B(0)-->mu(+/-)tau(-/+) and B(0)-->e(+/-)tau(-/+)

We have searched a sample of 9.6 x 10(6) BB events for the lepton-flavor-violating leptonic B decays, B(0)-->mu(+/-)tau(-/+) and B(0)-->e(+/-)tau(-/+). The tau lepton was detected through the decay modes tau-->lnunu(-) , where l=e, mu. There is no indication of a signal, and we obtain the 90% confidence level upper limits B(B(0)-->mu(+/-)tau(-/+))<3.8 x 10(-5) and B(B(0)-->e(+/-)tau(-/+))<1.3 x 10(-4).     

Chemisorption of 4-(4-amino-phenylazo) benzoic acid molecule on the Si(0 0 1)-(4 × 2) surface

Structural and electronic properties of self-assembled monolayer with 4-(4-amino-phenylazo) benzoic acid (APABA) on the Si(0 0 1)-(4 × 2) surface are investigated by ab initio calculation based on density functional theory. For the APABA chemisorption on the silicon surface, we have assumed two different binding sites: (i) amino group of molecule and (ii) carboxyl group of molecule. Considering amino-site, we have assumed two possible models for the chemisorption of molecules on the Si(0 0 1)-(4 × 2) surface: (i) an intrarow position between two neighboring Si dimers in the same dimer row (Model I), (ii) on-dimer position (Model II). We have found that Model II is 1.10 eV energetically more favorable than Model I. The Si-N bond length was calculated as 1.85 Å which is in excellent agreement with the sum of the corresponding covalent radii of 1.87 Å. Considering carboxyl-site, we have assumed exactly the same model as mentioned above. Again we have found that Model II is energetically favorable than Model I. The calculated bond lengths for Si-O and O-C are 1.76 and 1.35 Å, respectively.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Sb incorporation at GaAs(0 0 1)-(2 × 4) surfaces

We examine the Sb incorporation and resulting surface reconstructions of Sb and GaSb deposited on GaAs(0 0 1). These films exhibit a mixed surface reconstruction of α2(2 × 4) and α(4 × 3). Initially, Sb reacts with Ga on the surface to form 2D islands of GaSb with an α(4 × 3) surface reconstruction. The 2D islands grow to a critical size of 30 nm², beyond which the atomic surface structure of the 2D island transforms to a α2(2 × 4) reconstruction in order to reduce the strain induced surface energy. This transformation is limited by the availability of Ga, which is necessary in higher quantities for the α2(2 × 4) reconstruction than for the α(4 × 3). The transformation results in a mixed α2(2 × 4)-α(4 × 3) surface where the surface reconstruction is coupled to the surface morphology, which may in the future provide a pathway for self-assembly of structures.     

Observation of CP violation in B(0) --> K(+)pi(-) and B(0) --> pi(+)pi(-)

We report observations of CP violation in the decays B(0) --> K(+)pi(-) and B(0) --> pi(+)pi(-) in a sample of 383 x 10(6) Upsilon(4S) --> BB[over] events. We find 4372+/-82 B(0) --> K(+)pi(-) decays and measure the direct CP-violating charge asymmetry A(Kpi) = -0.107+/-0.018(stat)(-0.004)(+0.007)(syst), which excludes the CP-conserving hypothesis with a significance of 5.5 standard deviations. In the same sample, we find 1139+/-49 B(0) --> pi(+)pi(-) decays and measure the CP-violating asymmetries S(pipi) = -0.60+/-0.11(stat)+/-0.03(syst) and C(pipi) = -0.21+/-0.09(stat)+/-0.02(syst). CP conservation in B(0) --> pi(+)pi(-) (S(pipi) = C(pipi) = 0) is excluded at a confidence level 1-C.L. = 8 x 10(-8), corresponding to 5.4 standard deviations.     

Leed crystallographic investigations of the surface structure designated Zr(0 0 0 1)-(2 x 2)-O

Initial crystallographic investigations have been made with low-energy electron diffraction for the (2 x 2) structure obtained by adsorbing oxygen on the (0 0 0 1) surface of zirconium. Intensity vs energy curves were measured for six diffracted beams at normal incidence, and levels of correspondence with calculated curves for models in which O atoms occupy octahedral holes between close-packed Zr layers were assessed with the reliability index proposed by Pendry. This analysis suggests that O atoms incorporate into the zirconium structure, and that the metal atoms pack as the f.c.c. structure for the region probed by LEED.     

Observation of B --> K(+/-) pi(0) and B --> (K)0 pi(0), and evidence for B --> pi(+)pi(-)

We have studied charmless hadronic decays of B mesons into two-body final states with kaons and pions and observe three new processes with the following branching fractions: beta(B-->pi(+)pi(-)) = (4.3(+1. 6)(-1.4)+/-0.5)x10(-6), beta(B-->K(0)pi(0)) = (14.6(+5.9+2.4)(-5.1-3. 3))x10(-6), and beta(B-->K(+)/-pi(0)) = (11.6(+3.0+1.4)(-2.7-1.3))x10(-6). We also update our previous measurements for the decays B-->K(+)/-pi(-/+) and B+/--->K(0)pi(+/-).     

Observation of B(0) --> D0pi(0) and B(0) -->D(*0)pi(0)

We have studied the color-suppressed hadronic decays of neutral B mesons into the final states D*0pi(0). Using 9.67 x 10(6) BB pairs collected with the CLEO detector, we observe the decays B( 0) --> D0pi(0) and B( 0) -->D(*0)pi(0) with the branching fractions BB( 0) -->D0pi(0)) = (2.74(+0.36)(-0.32) +/- 0.55)x10(-4) and BB( 0) -->D(*0)pi(0)) = (2.20(+0.59)(-0.52) +/- 0.79)x10(-4). The first error is statistical and the second systematic. The statistical significance of the D0pi(0) signal is 12.1sigma ( 5.9sigma for D(*0)pi(0)). Utilizing the B( 0) -->D*0)pi(0) branching fractions we determine the strong phases delta(I,D(*)) between isospin 1/2 and 3/2 amplitudes in the Dpi and D*pi final states to be cosdelta(I,D) = 0.89 +/-0.08 and cosdelta(I,D*) = 0.89 +/- 0.08, respectively.     

Dalitz analysis of D0-->K(0)(S)pi(+)pi(-)

In e(+)e(-) collisions using the CLEO detector, we have studied the decay of the D0 to the final state K(0)(S)pi(+)pi(-) with the initial flavor of the D0 tagged by the decay D(*+)-->D0pi(+). We use the Dalitz technique to measure the resonant substructure in this final state and clearly observe ten different contributions by fitting for their amplitudes and relative phases. We observe a K(*)(892)(+)pi(-) component which arises from doubly Cabibbo suppressed decays or D0-D0; mixing.     

Observation of e(+)e(-) annihilation into the C = +1 hadronic final states rho(0)rho(0) and phirho(0)

We report the first observation of e(+)e(-) annihilation into states of positive C parity, namely, rho(0)rho(0) and phirho(0). The two states are observed in the pi(+)pi(-)pi(+)pi(-) and K(+)K(-)pi(+)pi(-) final states, respectively, in a data sample of 225 fb(-1) collected by the BABAR experiment at the Positron-Electron Project II e(+)e(-) storage rings at energies near sqrt[s]=10.58 GeV. The distributions of costheta(*), where theta(*) is the center-of-mass polar angle of the phi meson or the forward rho(0) meson, suggest production by two-virtual-photon annihilation. We measure cross sections within the range |costheta(*)|<0.8 of sigma(e(+)e(-)-->rho(0)rho(0))=20.7+/-0.7(stat)+/-2.7(syst) fb and sigma(e(+)e(-)-->phirho(0))=5.7+/-0.5(stat)+/-0.8(syst) fb.     

B0-B(-)0 mixing beyond factorization in QCD sum rules

We present a calculation of the B0-B(-)0 mixing matrix element in the framework of QCD sum rules for three-point functions. We compute alpha(s) corrections to a three-point function at the three-loop level in QCD perturbation theory, which allows one to extract the matrix element with next-to-leading order (NLO) accuracy. This calculation is imperative for a consistent evaluation of experimentally measured mixing parameters since the coefficient functions of the effective Hamiltonian for B0-B(-)0 mixing are known at NLO. We find that radiative corrections violate factorization at NLO; this violation is under full control and amounts to 10%. The resulting value of the B parameter is found to be B(B)(m(b))=1+0.1(PT)-0.05(non-PT).     

D0-(D-)0 mixing and other charm decays at Belle

The D0-D-0 mixing at Belle in different modes with corresponding methods is reported in this paper,there is a clear evidence for non-zero y D0 mixing parameter,and the measurement of D0 mixing parameter x is still a challenge.CP violation in the decays is not observed.Branching fractions of other charm decays are presented.     

Hydrogen-induced metallization of the 3C-SiC(0 0 1)-(3 × 2) surface

A surprising metallization of the SiC(0 0 1)-(3 × 2) surface induced by hydrogen adsorption was discovered in recent experiments. The effect was ascribed to dangling bonds created on the third layer of the surface system by H adsorption and stabilized by steric hindrance. We have investigated the surface metallization by density functional calculations. Our total-energy minimizations show that dangling bonds on the third layer are very unstable. Instead, H adatoms form angular Si-H-Si bonds on the third layer after the asymmetric dimers on the top layer have been saturated by H forming monohydrides. The novel Si-H-Si bonds on the third layer give rise to a metallic surface, indeed. But the mechanism for metallization is very different from the one suggested originally. Likewise, H atoms can also occupy bridge positions in angular Si-H-Si bonds on the second layer and induce metallization, as well. In addition to monohydrides on the top-layer dimers, we have also investigated dihydride surfaces with additional H on the second and/or third layer. The dihydride surface structure with H adsorbed on both the second and third layers is energetically most favorable and is also metallic. In all three cases the new Si-H-Si bonds are the origin of the surface metallization while its nature is somewhat more intricate, as will be discussed.     

Interaction of hydrogen with GaAs (0 0 1)-2×4

The absorption of hydrogen at a GaAs (0 0 1)-2×4 surface has been studied with angular resolved photoemission, core level photoemission and RHEED. We find a prominent hydrogen-induced peak in the heteropolar gap at -7.7 eV. Our results indicate, furthermore, that the (atomic) hydrogen interacts with both As and Ga surface atoms. The interaction is complex, leading to an As-depleted and disordered surface. Simple tight-binding considerations for the heteropolar gap state indicate that it could be caused by bonding of hydrogen to both As and Ga dangling bonds.     

Effect of hydrogenation on B/Si(0 0 1)-(1 × 2)

Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the effect of hydrogenation on the atomic geometries and the energetics of substitutional boron on the generic Si(0 0 1)-(1 × 2) surface. For a single B atom substitution corresponding to 0.5 ML coverage, we have considered two different sites: (i) the mixed Si-B dimer structure and (ii) boron substituting for the second-layer Si to form Si-B back-bond structure, which is energetically more favorable than the mixed Si-B dimer by 0.1 eV/dimer. However, when both of these cases are passivated by hydrogen atoms, the situation is reversed and the Si-B back-bond case becomes 0.1 eV/dimer higher in energy than the mixed Si-B dimer case. For the B incorporation corresponding to 1 ML coverage, among the substitutional cases, 100% interdiffusion into the third layer of Si and 50% interdiffusion into the second layer of Si are energetically similar and more favorable than the other cases that are considered. However, when the surface is passivated with hydrogen, the B atoms energetically prefer to stay at the third layer of the Si substrate.     

Observation of 1(-)0(-) final states from psi(2S) decays and e(+)e(-) annihilation

Using CLEO data collected from CESR e(+)e(-) collisions at the psi(2S) resonance and nearby continuum at sqrt[s]=3.67 GeV, we report the first significantly nonzero measurements of light vector-pseudoscalar hadron pair production (including rhopi, omegapi, rhoeta, and K(*0)K0 ) and the pi(+)pi(-)pi(0) final state, both from psi(2S) decays and direct e(+)e(-) annihilation.