Electric conduction properties of boron-doped ceria

In the present study, the effect of the addition of boron on the electrical conduction properties of nanocrystalline cerium oxide (CeO₂) was investigated. Pellets consisting of pure CeO₂ and a mixture of CeO₂ and 10 mol.% of boron oxide (B-CeO₂ samples) were sintered at 800 °C as well as 1100 °C and their electrical conduction properties investigated by impedance spectroscopy at different temperatures and oxygen partial pressures. The nanocrystalline B-CeO₂ samples exhibit a higher electronic grain boundary conductivity and higher activation energy compared to a pure CeO₂ sample (1.41 eV for B-CeO₂ vs. 1.21 eV for pure CeO₂). According to electron energy-loss spectroscopy analysis, (i) boron can be detected only at the grain boundaries and (ii) cerium cations are lightly reduced at the grain boundaries. The results are consistent with both the formation of a space charge layer with a positive space charge potential but also with conduction along a glassy cerium-boron-oxide phase.     

Thermal stability of the cubic phase in Ba0.5Sr0.5Co0.8Fe0.2O3 - δ (BSCF)1

Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3 - δ (BSCF) is a material with excellent oxygen ionic and electronic transport properties reported by many research groups. In its cubic phase, this mixed ionic-electronic conducting (MIEC) perovskite is a promising candidate for oxygen permeation membranes. For this application, its long-term stability under operating conditions (especially temperature and oxygen partial pressure) is of crucial importance.The present work is focused on the thermal stability of the BSCF cubic phase in the targeted temperature range for applications (700…900 °C) in light of previous studies in literature reporting a reversible transition to a hexagonal phase somewhere below 900 °C.To this end, single phase cubic BSCF powders were annealed at different temperatures over varying periods of time. Phase composition was subsequently analysed by X-ray diffractometry (XRD) in order to determine both the temperature limit and the time-scale for the formation of the hexagonal phase. Additionally, the long-term behaviour of the electrical conductivity was examined on bulk samples at 700 °C, 800 °C and 900 °C over several hundreds of hours, showing a prolonged decrease at 800 °C. The decrease in electrical conductivity at this temperature was also examined on bulk samples with different grain sizes, showing a more pronounced decrease the smaller the average grain size.Coexistence of both phases (cubic and hexagonal) could also be shown for 700 °C, however with a different phase equilibrium than at 800 °C.     

Electrical properties vs. microstructure of nanocrystallized V2O5-P2O5 glasses — An extended temperature range study

An electronically conducting nanomaterial was synthesized by nanocrystallization of a 90V₂O₅·10P₂O₅ glass and its electrical properties were studied in an extended temperature range from − 170 to + 400 °C. The conductivity of the prepared nanomaterial reaches 2 ? 10^− 1 S cm^− 1 at 400 °C and 2 ? 10^− 3 S cm^− 1 at room temperature. It is higher than that of the original glass by a factor of 25 at room temperature and more than 100 below − 80 °C. A key role in the conductivity enhancement was ascribed to the material's microstructure, and in particular to the presence of the large number of small (ca. 20 nm) grains of crystalline V₂O₅. The observed conductivity dependencies are discussed in terms of the Mott's theory of the electronic hopping transport in disordered systems. Since V₂O₅ is known for its ability to intercalate lithium, the presented results might be helpful in the development of cathode materials for Li-ion batteries.     

Effect of crystallinity on proton conductivity in yttrium-doped barium zirconate thin films

The effect of crystallinity on proton conductivity in amorphous, single crystal and polycrystal yttrium-doped barium zirconate (BYZ) thin films grown 120 nm in thickness on amorphous (quartz) and single crystal MgO(100) substrates has been studied. The conductivity was measured in the temperature range of 150 ~ 350 °C. By altering the film deposition temperature, varying degrees of crystallization and microstructure were observed by x-ray diffraction and transmission electron microscopy. The epitaxial BYZ film grown on MgO(100) substrate at 900 °C showed the highest proton conductivity among other samples with an activation energy of 0.45 eV, whereas polycrystalline and amorphous BYZ films showed lower conductivities due to grain boundaries in their granular microstructure.     

Electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria

The electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria have been determined as a function of temperature (300 < T/°C < 700) and oxygen partial pressure [10^− 24 ≤ p(O₂)/bar ≤ 1, T = 700 °C] by application of impedance spectroscopy. The yttria and ceria contents of Ce_xY_0.2 − xSc_0.6Zr_3.2O_8 − δ (0 ≤ x ≤ 0.2) have been varied systematically. Homogeneous samples have been prepared by means of a sol-gel (glycine-nitrate) combustion process. The ionic conductivity in air is almost independent of composition with typical values around 0.03-0.04 S cm^− 1 for the bulk at 700 °C. A significant decrease of the ionic conductivities of bulk and grain boundaries is found for samples co-doped with ceria at low oxygen partial pressures [p(O₂) < 10^− 15 bar, T = 700 °C]. Activation energies for the ionic transport in oxidizing (air) and reducing (1%-H₂/Ar) atmospheres have been extracted from Arrhenius-plots. The oxygen nonstoichiometry in 1%-H₂/Ar has been investigated by employing thermogravimetry. The decrease of the ionic conductivity under reducing conditions is accompanied by an increase of the corresponding high temperature activation energy of the bulk, which is interpreted in terms of defect association or clustering.     

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Ion beam sputtering process was used to deposit n-type fine-grained Bi₂Te₃ thin films on BK7 glass substrates at room temperature. In order to enhance the thermoelectric properties, thin films are annealed at the temperatures ranging from 100 to 400 °C. X-ray diffraction (XRD) shows that the films have preferred orientations in the c-axis direction. It is confirmed that grain growth and crystallization along the c-axis are enhanced as the annealing temperature increased. However, broad impurity peaks related to some oxygen traces increase when the annealing temperature reached 400 °C. Thermoelectric properties of Bi₂Te₃ thin films were investigated at room temperature. The Bi₂Te₃ thin films, including as-deposited, exhibit the Seebeck coefficients of −90 to −168 μV K⁻¹ and the electrical conductivities of 3.92×10²-7.20×10² S cm⁻¹ after annealing. The Bi₂Te₃ film with a maximum power factor of 1.10×10⁻³ Wm⁻¹ K⁻² is achieved when annealed at 300 °C. As a result, both structural and transport properties have been found to be strongly affected by annealing treatment. It was considered that the annealing conditions reduce the number of potential scattering sites at grain boundaries and defects, thus improving the thermoelectric properties.     

Microstructure-property relations in composite yttria-substituted zirconia solid electrolytes

A study of composite 8 mol% yttria stabilized zirconia (8YSZ) and 3 mol% yttria tetragonal zirconia polycrystal (3YTZP) solid electrolytes sintered under isothermal and two-step sintering cycles is reported. The nominal phase composition is retained for composites with up to 25 wt.% 3YTZP. These composites show a combination of beneficial effects with respect to pure 8YSZ, including slight improvement in sinterability, gains in bulk and grain boundary conductivity and also enhanced fracture toughness. Impedance spectroscopy revealed an enhancement of the specific grain boundary conductivity for samples with finer grain sizes, attained by increasing the fraction of 3YTZP or by hindering grain growth under two-step sintering cycles. This effect is rationalized in terms of a decrease of the grain boundary space-charge potential. The conductivity gains decrease with increasing temperature, but even at 700 °C the total ionic conductivity of ceramics with 25 wt.% 3YTZP is still higher than that of pure 8YSZ, whereas at 900 °C there is a performance loss of less than 10%. The improved mechanical and electrical performance in the intermediate temperature range represents an important advantage of the heterostructured electrolytes for low/intermediate temperature SOFC operation.     

Epitaxial growth of Sc-doped ZnO films on Si by sol-gel route

The epitaxial growth of doped ZnO films is of great technological importance. Present paper reports a detailed investigation of Sc-doped ZnO films grown on (1 0 0) silicon p-type substrates. The films were deposited by sol-gel technique using zinc acetate dihydrate as precursor, 2-methoxyethanol as solvent and monoethanolamine (MEA) as a stabilizer. Scandium was introduced as dopant in the solution by taking 0.5 wt%¹ of scandium nitrate hexahydrate. The effect of annealing on structural and photoluminescence properties of nano-textured Sc-doped films was investigated in the temperature range of 300-550 °C. Structural investigations were carried out using X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray diffraction study revealed that highly c-axis oriented films with full-width half maximum of 0.21° are obtained at an annealing temperature of 400 °C. The SEM images of ZnO:Sc films have revealed that coalescence of ZnO grains occurs due to annealing. Ostwald ripening was found to be the dominant mass transport mechanism in the coalescence process. A surface roughness of 4.7 nm and packing density of 0.93 were observed for the films annealed at 400 °C. Room temperature photoluminescence (PL) measurements of ZnO:Sc films annealed at 400 °C showed ultraviolet peak at about (382 nm) with FWHM of 141 meV, which are comparable to those found in high-quality ZnO films. The films annealed below or above 400 °C exhibited green emission as well. The presence of green emission has been correlated with the structural changes due to annealing. Reflection high energy electron diffraction pattern confirmed the nearly epitaxial growth of the films.     

Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A⁰X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum.     

Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium

The development of cost-effective and low-temperature synthesis techniques for the growth of high-quality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from chloride medium (at 70 °C) on fluor-doped tin oxide (FTO) substrates is strongly influenced by the post-growth thermal annealing treatments. X-ray diffraction (XRD) measurements show that the films have preferably grown along (0 0 2) direction. Thermal annealing in the temperature range of 150-400 °C in air has been carried out for these ZnO thin films. The as-grown films contain chlorine which is partially removed after annealing at 400 °C. Morphological changes upon annealing are discussed in the light of compositional changes observed in the ZnO crystals that constitute the film. The optical quality of ZnO thin films was improved after post-deposition thermal treatment at 150 °C and 400 °C in our experiments due to the reducing of defects levels and of chlorine content. The transmission and absorption spectra become steeper and the optical bandgap red shifted to the single-crystal value. These findings demonstrate that electrodeposition have potential for the growth of high-quality ZnO thin films with reduced defects for device applications.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Effect of nanoscale thin films of Dy2Fe14B on the magnetic hysteresis characteristics of melt-spun ribbons of Nd2Fe14B

The effectiveness of nanoscale Dy₂Fe₁₄B thin films on coercivity and energy product of melt-spun ribbons of Nd₂Fe₁₄B at high temperatures was investigated. It is hypothesized that the nanoscale Dy-thin film will act as an obstacle for the nucleation of reverse domains and also maximize the energy of domain walls and thereby improve the magnetic performance at high temperatures. Pulsed laser deposition (PLD) of amorphous Dy₂Fe₁₄B layers on Nd₂Fe₁₄B melt-spun ribbons was performed for a nominal thickness of 40 nm. The coated ribbons were then annealed in environmentally controlled quartz furnace at two different cycles (750 °C for 15 min and 900 °C for 2 h) to cause crystallization. Magnetic hysteresis tests conducted at 300 and 400 K revealed that there is small but consistent improvement in the magnetic properties of the coated ribbons annealed at 750 °C for 15 min. However, higher temperature annealing (900 °C for 2 h) drastically reduced the magnetic properties. The incomplete recrystallization of amorphous structure at 750 °C for 15 min and large grain growth and formation of non-magnetic phases at 900 °C for 2 h are believed to be responsible for not meeting the expected magnetic performance.     

Effects of post-annealing on structural, optical and electrical properties of Al-doped ZnO thin films

Aluminum-doped zinc oxide (AZO) films were deposited at 400 °C by radio-frequency magnetron sputtering using a compound AZO target. The effects of annealing atmospheres as well as hydrogen annealing temperatures on the structural, optical and electrical properties of the AZO films were investigated. It was found that the electrical resistivity varied depending on the atmospheres while annealing in air, nitrogen and hydrogen at 300 °C, respectively. Comparing with that for the un-annealed films, the resistivity of the films annealed in hydrogen decreased from 9.8 × 10⁻⁴ Ω cm to 3.5 × 10⁻⁴ Ω cm, while that of the films annealed in air and nitrogen increased. The variations in electrical properties are ascribed to both the changes in the concentration of oxygen vacancies and adsorbed oxygen at the grain boundaries. These results were clarified by the comparatively XPS analyzing about the states of oxygen on the surface of the AZO films. There was great increase in electrical resistivity due to the damage of the surfaces, when AZO films were annealed in hydrogen with a temperature higher than 500 °C, but high average optical transmittance of 80-90% in the range of 390-1100 nm were still obtained.     

Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition

Tin oxide (SnO₂) thin films were grown on Si (1 0 0) substrates using pulsed laser deposition (PLD) in O₂ gas ambient (10 Pa) and at different substrate temperatures (RT, 150, 300 and 400 °C). The influence of the substrate temperature on the structural and morphological properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). XRD measurements showed that the almost amorphous microstructure transformed into a polycrystalline SnO₂ phase. The film deposited at 400 °C has the best crystalline properties, i.e. optimum growth conditions. However, the film grown at 300 °C has minimum average root mean square (RMS) roughness of 3.1 nm with average grain size of 6.958 nm. The thickness of the thin films determined by the ellipsometer data is also presented and discussed.     

Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

Nanocrystalline Zn prepared by compacting nanoparticles with mean grain size about 55 nm at 15 MPa has been studied by positron lifetime spectroscopy. For the bulk Zn sample, the vacancy defect is annealed out at about 350 °C, but for the nanocrystalline Zn sample, the vacancy cluster in grain boundaries is quite difficult to be annealed out even at very high temperature (410 °C). In the grain boundaries of nanocrystalline Zn, the small free volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ₁). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ_av), which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. This stabilization is very important for the nanocrystalline materials using as radiation resistant materials.     

Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique

Transparent conducting indium doped zinc oxide was deposited on glass substrate by ultrasonic spray method. The In doped ZnO samples with indium concentration of 3 wt.% were deposited at 300, 350 and 400 °C with 2 min of deposition time. The effects of substrate temperature and annealing temperature on the structural, electrical and optical properties were examined. The DRX analyses indicated that In doped ZnO films have polycrystalline nature and hexagonal wurtzite structure with (0 0 2) preferential orientation and the maximum average crystallite size of ZnO: In before and annealed at 500 °C were 45.78 and 55.47 nm at a substrate temperature of 350 °C. The crystallinity of the thin films increased by increasing the substrate temperature up 350 °C, the crystallinity improved after annealing temperature at 500 °C. The film annealed at 500 °C and deposited at 350 °C show lower absorption within the visible wavelength region. The band gap energy increased from E_g = 3.25 to 3.36 eV for without annealing and annealed films at 500 °C, respectively, indicating that the increase in the transition tail width. This is due to the increase in the electrical conductivity of the films after annealing temperature.     

The structural and optical properties of ZnO/Si thin films by RTA treatments

ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size.     

The effect of heat treatment on the physical properties of sol-gel derived ZnO thin films

Zinc oxide (ZnO) thin films were deposited on microscope glass substrates by sol-gel spin coating method. Zinc acetate (ZnAc) dehydrate was used as the starting salt material source. A homogeneous and stable solution was prepared by dissolving ZnAc in the solution of monoethanolamine (MEA). ZnO thin films were obtained after preheating the spin coated thin films at 250 °C for 5 min after each coating. The films, after the deposition of the eighth layer, were annealed in air at temperatures of 300 °C, 400 °C and 500 °C for 1 h. The effect of thermal annealing in air on the physical properties of the sol-gel derived ZnO thin films are studied. The powder and its thin film were characterized by X-ray diffractometer (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure (JCPDS 36-1451) and show the c-axis grain orientation. Increasing annealing temperature increased the c-axis orientation and the crystallite size of the film. The annealed films are highly transparent with average transmission exceeding 80% in the visible range (400-700 nm). The measured optical band gap values of the ZnO thin films were between 3.26 eV and 3.28 eV, which were in the range of band gap values of intrinsic ZnO (3.2-3.3 eV). SEM analysis of annealed thin films has shown a completely different surface morphology behavior.     

The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films

The structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at −123 and 27 °C) and post-deposition annealing temperature (at 200, 300 and 400 °C). It was determined that films deposited at both substrate temperatures were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. A small Te peak was detected in XRD spectra for both substrate temperatures, indicating that as-deposited ZnTe films were slightly rich in Te. Larger grains and a tighter grain size distribution were obtained with increased substrate temperature. Scanning electron microscopy (SEM) studies showed that the microstructures of the as-deposited films agreed well with the expectations from structure zone model. Post-deposition annealing induced further grain growth and tightened the grain size distribution. Annealing at 400 °C resulted in randomization in the texture of films deposited at both substrate temperatures. Optical spectroscopy results of the films indicated that the optical band gap value increased from 2.13 to 2.16 eV with increased substrate temperature. Increasing the annealing temperature sharpened the band-edge. Resistivity measurements showed that the resistivity of films deposited at substrate temperatures of −123 and 27 °C were 32 Ω cm, and 1.0 × 10⁴ Ω cm, respectively with corresponding carrier concentrations of 8.9 × 10¹⁵ cm⁻³ and 1.5 × 10¹⁴ cm⁻³. Annealing caused opposite changes in the film resistivity between the samples prepared at substrate temperatures of −123 and 27 °C.     

Electron beam physical vapor deposition of YSZ electrolyte coatings for SOFCs

YSZ electrolyte coatings were prepared by electron beam physical vapor deposition (EB-PVD) at a high deposition rate of up to 1 μm/min. The YSZ coating consisted of a single cubic phase and no phase transformation occurred after annealing treatment at 1000 °C. A typical columnar structure was observed in this coating by SEM and feather-like characteristics appeared in every columnar grain. In columnar grain boundaries there were many micron-sized gaps and pores. In TEM image, many white lines were found, originating from the alignment of nanopores existing within feather-like columnar grains. The element distribution along the cross-section of the coating was homogeneous except Zr with a slight gradient. The coating exhibited a characteristic anisotropic behavior in electrical conductivity. In the direction perpendicular to coating surface the electrical conductivity was remarkably higher than that in the direction parallel to coating surface. This mainly attributed to the typical columnar structure for EB-PVD coating and the existence of many grain boundaries along the direction parallel to coating surface. For as-deposited coating, the gas permeability coefficient of 9.78 × 10⁻⁵ cm⁴ N⁻¹ s⁻¹ was obtained and this value was close to the critical value of YSZ electrolyte layer required for solid oxide fuel cell (SOFC) operation.