Effects of crystallographic orientation on the oxygen exchange rate of La0.7Sr0.3MnO3 thin films

The oxygen surface exchange of La_0.7Sr_0.3MnO₃ (LSM) thin films was investigated using the electrical conductivity relaxation (ECR) method. Epitaxial (100)-, (110)-, and (111)-oriented LSM films were fabricated on corresponding SrTiO₃ (STO) substrates using pulsed laser deposition. The LSM films had well-controlled surface qualities, exhibited bulk-like steady-state electrical properties, and exhibited surface dominated responses in ECR. The chemical surface exchange coefficients (k_chem) were determined and varied from ≈ 1 × 10^− 6 to 65 × 10^− 6 cm/s, depending on temperature and orientation, with activation energies of between 0.8 and 1.2 eV. At 800 °C, a four fold variation is observed in the k_chem values, with (110)/(100) being the highest/lowest, explained well by the high activation energy for (110), ≈ 1.16 eV, and the low energy for (111) and (100), ≈0.83 eV.     

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Behavior of N atoms in atomic-order nitrided Si_0.5Ge_0.5(1 0 0) by heat treatment in Ar at 600 °C was investigated by X-ray photoelectron spectroscopy (XPS). For thermal nitridation by NH₃ at 400 °C, nitridation of surface Si atoms tends to proceed preferentially over nitridation of surface Ge atoms. It is also clear that, with the heat treatment, nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms. Angle-resolved XPS results show that Ge fraction beneath the surface nitrided layer increases significantly at 600 °C compared to the initial surface. These results indicate that preferential nitridation of Si atoms at surface over Ge atoms induces Ge segregation beneath the surface nitrided layer at higher temperatures above 400 °C.     

Fabrication and evolution of Cu nanoparticles in Al2O3 crystal by ion implantation and annealing at different atmospheres

Single crystal Al₂O₃ samples were implanted with 45 keV Cu ion implantation at a dose of 1 × 10¹⁷ ions/cm², and then subjected to furnace annealing in vacuum or with a flow of oxygen gas. Various techniques, such as ultraviolet-visible spectroscopy, X-ray diffraction spectroscopy and atomic force microscopy, have been used to investigate formation of Cu NPs and their evolution. Our results clearly show that the evolution of Cu NPs depends strongly on annealing atmosphere in the temperature range up to 600 °C. Annealing in vacuum only gives rise to a slight change in the size of Cu NPs. No evidence for oxidization of Cu NPs has been revealed. Remarkable modifications in Cu NPs, including the size increase and the effective transformation into CuO NPs, have been observed for the samples annealed at oxygen atmosphere. The results have been tentatively discussed in combination with the role of oxygen from atmosphere in diffusion of Cu atoms towards the surface and its interactions with Cu NPs during annealing.     

Influence of deposition temperature on the structural and morphological properties of Be3N2 thin films grown by reactive laser ablation

Be₃N₂ thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 °C, 400 °C, 600 °C and 700 °C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 °C and 700 °C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be₃N₂ stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 °C or 700 °C. However, the samples grown at RT and annealed at 600 °C or 700 °C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 °C, and the sample annealed in situ at 600 °C were amorphous; while the αBe₃N₂ phase was presented on the samples with a substrate temperature of 600 °C, 700 °C and that deposited with the substrate at RT and annealed in situ at 700 °C.     

Photocatalytic activity of multielement doped TiO2 in the degradation of congo red

TiO₂ although considered a promising photocatalyst for the degradation of aqueous pollutants, it suffers from poor absorption in the visible region and hence requires ultraviolet (UV) light for activation. To make TiO₂ a visible active photocatalyst, multielement (C, N, B, and F) doping has been done. The synthesised CNBF/TiO₂ catalysts were calcined at different temperatures and characterized by XRD, BET surface area, UV DRS, XPS, HRSEM-EDAX, and TEM techniques. These catalysts found to show less band gap values when compared to bare TiO₂. These catalysts were tested for their catalytic activity towards the degradation of a textile dye - congo red (CR) under different reaction conditions. It was found that the photocatalytic activity was dependent on both doping of multielement and the calcination temperature of CNBF/TiO₂. The co-doped catalysts which were calcined at 400 °C and 600 °C (100% intensity in anatase phase) were found to be the best catalysts (100% decolourisation of CR in 21/2 h and 2 h respectively). TOC analysis carried out for the samples at the reaction time of 5 h showed very high percentage (83%) degradation of CR over CNBF/TiO₂ catalysts calcined at 600 °C when compared to the other catalysts calcined at different temperatures. CNBF/TiO₂ (1000 °C) showed very less photocatalytic activity due to the formation of rutile phase.     

Thermal stability, oxygen non-stoichiometry and transport properties of LaNi0.6Fe0.4O3

Thermal stability, oxygen non-stoichiometry and electrical conductivity of LaNi_0.6Fe_0.4O_3−δ were investigated in the temperature region of 20-1000 °C in Ar/O₂ gas flows at oxygen partial pressures between 0.5 and 21,000 Pa. Diffusion mobility was measured in Ar/O₂ gas flow at pO₂ = 18 Pa. Crystal structure of this compound was found to be stable at the mentioned experimental conditions. LaNi_0.6Fe_0.4O_3−δ is a p-type semiconductor with metallic type conductivity above 150 °C at the investigated pO₂ range. Two different (fast and slow) oxygen exchange areas on the temperature-pO₂ diagram were established, which are due to two different oxygen anion positions in the double B-site mixed perovskite structure. Oxygen non-stoichiometry in the fast oxygen exchange region reaches about 0.005 of oxygen atomic index. Chemical diffusion and oxygen surface exchange coefficients do not vary at 600-800 °C, but show visible increase above 800-850 °C.     

Effects of forming gas annealing on LiNbO3 single crystals

Z-cut congruent LiNbO₃ single crystals were annealed in 95%N₂+5%H₂ at high temperatures. X-ray diffraction showed that 2θ of (0 0 0 6) peak is obviously reduced by 0.6° and 1.0° for the samples annealed at 600 and 900 °C, respectively. A new peak appears at the high-energy side of O 1s spectrum in X-ray photoelelectron spectroscopy (XPS) analyses, and the leakage current is greatly increased. It is proposed that hydrogen is incorporated in LiNbO₃ single crystals through forming gas annealing at temperatures up to 900 °C and exists in LiNbO₃ as a proton bound to an oxygen ion through O-H bond with its electron donated.     

Spray pyrolytic deposition of transparent aluminum oxide (Al2O3) films

Optically transparent Al₂O₃ films has been synthesized, on quartz substrates at 500, 600 and 700 °C, from 0.02 M aluminum acetyl acetonate (Al(acac)₃) in ethanol, by using ultrasonic spray pyrolysis technique. The films synthesized at 500, 600 and 700 °C are amorphous having average particle sizes 27 ± 6, 18 ± 3 and 14 ± 3, respectively. The films are found to be 95% optically transparent in the visible region. The optical transparency of the films in the ultraviolet region is found to increase with increase in deposition temperature. The observed increase in optical band gap and decrease in refractive index is attributed to the decrease in particle size with increase in deposition temperature. The stoichiometry and chemical bonding of the amorphous film studied using XPS and FTIR spectroscopy revealed the presence chemisorbed oxygen.     

Sputter deposition of high transparent TiO2−xNx/TiO2/ZnO layers on glass for development of photocatalytic self-cleaning application

In this study, TiO_2−xN_x/TiO₂ double layers thin film was deposited on ZnO (80 nm thickness)/soda-lime glass substrate by a dc reactive magnetron sputtering. The TiO₂ film was deposited under different total gas pressures of 1 Pa, 2 Pa, and 4 Pa with constant oxygen flow rate of 0.8 sccm. Then, the deposition was continued with various nitrogen flow rates of 0.4, 0.8, and 1.2 sccm in constant total gas pressure of 4 Pa. Post annealing was performed on as-deposited films at various annealing temperatures of 400, 500, and 600 °C in air atmosphere to achieve films crystallinity. The structure and morphology of deposited films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The chemical composition of top layer doped by nitrogen was evaluated by X-ray photoelectron spectroscopy (XPS). Photocatalytic activity of samples was measured by degradation of Methylene Blue (MB) dye. The optical transmittance of the multilayer film was also measured using ultraviolet-visible light (UV-vis) spectrophotometer. The results showed that by nitrogen doping of a fraction (∼1/5) of TiO₂ film thickness, the optical transmittance of TiO_2−xN_x/TiO₂ film was compared with TiO₂ thin film. Deposited films showed also good photocatalytic and hydrophilicity activity at visible light.     

Thermal stability of HfO2 nanotube arrays

Thermal stability of highly ordered hafnium oxide (HfO₂) nanotube arrays prepared through an electrochemical anodization method in the presence of ammonium fluoride is investigated in a temperature range of room temperature to 900 °C in flowing argon atmosphere. The formation of the HfO₂ nanotube arrays was monitored by current density transient characteristics during anodization of hafnium metal foil. Morphologies of the as-grown and post-annealed HfO₂ nanotube arrays were analyzed by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although monoclinic HfO₂ is thermally stable up to 2000 K in bulk, the morphology of HfO₂ nanotube arrays degraded at 900 °C. A detailed X-ray photoelectron spectroscopy (XPS) study revealed that the thermal treatment significantly impacted the composition and the chemical environment of the core elements (Hf and O), as well as F content coming from the electrolyte. Possible reasons for the degradation of the nanotube at high temperature were discussed based on XPS study and possible future improvements have also been suggested. Moreover, dielectric measurements were carried out on both the as-grown amorphous film and 500 °C post-annealed crystalline film. This study will help us to understand the temperature impact on the morphology of nanotube arrays, which is important to its further applications at elevated temperatures.     

STM and XPS characterisation of vacuum annealed nanocrystalline WO3 films

Scanning tunnelling microscopy and X-ray Photoelectron Spectroscopy were conducted on magnetron sputtered WO₃ thin films, following a sequence of ultra high vacuum anneals from 100 °C to 900 °C. Annealing from 100 °C to 400 °C induced an upward surface band bending of about 0.3 eV, attributed to the oxygen migration from the bulk to the surface, but no changes in the surface topography. Chemical changes occurred from 600 °C to 800 °C, associated with the formation of secondary oxide species. STM imaging showed that the film surface consists of amorphous particles 35 nm in size up to 600 °C, while higher temperatures resulted in an increase in particle size. Crystallisation of the nanoparticles started to occur after annealing at 600 °C. The implications in terms of gas sensing are discussed.     

Surface study of fine MgFe2O4 ferrite powder prepared by chemical methods

To study surface behaviors, MgFe₂O₄ ferrite materials having different grain sizes were synthesized by two different chemical methods, i.e., a polymerization method and a reverse coprecipitation method. The single phase of the cubic MgFe₂O₄ was confirmed by the X-ray diffraction method for both the precursors decomposed at 600-1000 °C except for a very small peak of Fe₂O₃ was detected for the samples calcined at 600 and 700 °C by the polymerization method. The crystal size and particle size increased with an increase in the sintering temperature using both methods. The conductance of the MgFe₂O₄ decreased when the atmosphere was changed from ambient air to air containing 10.0 ppm NO₂. The conductance change, C = G(air)/G(10 ppm NO₂), was reduced with an increase in the operating temperature. For the polymerization method, the maximum C-value was ca. 40 at 300 °C for the samples sintered at 900 °C. However, the samples sintered at 1000 °C showed a low conductance change in the 10 ppm NO₂ gas, because the ratio of the O₂ gas adsorption sites on the particle surface is smaller than those of the samples having a high C-value. The low Mg content on the surface affects the low ratio of the gas adsorption sites. For the reverse coprecipitation method, the particle size was smaller than that of the polymerization method. Although a stable conductance was obtained for the sample sintered at 900 and 1000 °C, its conductance change was less than that of the polymerization method.     

Investigation of IrO2-SnO2 thin film evolution from aqueous media

The thermal evolution process of IrO₂-SnO₂/Ti mixed oxide thin films of varying noble metal content has been investigated under in situ conditions by thermogravimetry-mass spectrometry, Fourier transform infrared emission spectroscopy and cyclic voltammetry. The gel-like films prepared from aqueous solutions of the precursor salts Sn(OH)₂(CH₃COO)_2−xCl_x and H₂IrCl₆ on titanium metal support were heated in an atmosphere containing 20% O₂ and 80% Ar up to 600 °C.The thermal decomposition reactions practically take place in two separate temperature ranges from ambient to about 250 °C and between 300 and 600 °C. In the low temperature range the liberation of solution components and - to a limited extent - an oxidative cracking reaction of the acetate ligand takes place catalyzed by the noble metal. In the high temperature range the evolution of chlorine as well as the decomposition of surface species formed (carbonyls, carboxylates, carbonates) can be observed. The acetate ligand shows extreme high stability and is decomposed in the 400-550 °C range, only.Since the formation and decomposition of the organic surface species can significantly influence the morphology (and thus the electrochemical properties) of the films, the complete understanding of the film evolution process is indispensable to optimize the experimental conditions of electrode preparation.     

Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

This paper deals with the sol-gel elaboration and defects photoluminescence (PL) examination of Al₂O₃ nanocrystallites (size ∼30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO₂ host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al₂O₃/SiO₂ (AS) exhibited a strong PL bands at 400-600 and 700-900 nm in 78-300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400-600 and 700-900 nm, respectively.     

Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface

The etching effects on the surface and electrical characteristics of high Al mole fraction Al_xGa_1−xN (x = 0.65) have been characterized by X-ray photoelectron spectroscopy (XPS) and transfer length method (TLM) as a function of radio frequency power. XPS results show that the Ga-N and Al-N peaks move to the lower energy after ICP etchings. An increase in the amount of oxygen and a decrease in the amount of nitrogen are observed for the etched samples along with the RF power. The annealing at 450 °C is partly effective on removing the oxygen amount which would come from the C-O component and recovering the N deficiencies on the surface of etched sample. The extracted sheet resistance of the AlGaN layer from TLM increases gradually after ICP etching with an increase of RF power. The correlation between the XPS peaks and the electrical properties of the etched samples has been discussed and the annealing effect on the inverse leakage current of the p-i-n AlGaN solar blind UV detector is examined.     

A stable NH4PO3-glass proton conductor for intermediate temperature fuel cells

A stable and conductive composite material based on NH₄PO₃ and amorphous oxides (SiO₂-P₂O₅) has been prepared by a wet-chemical route following with firing in ammonia. The composite showed high proton conductivity in both ambient air and humidified 5% H₂/Ar. A total conductivity of 6.0-19 mS/cm in the temperature range of 150-250 °C has been achieved. The conductivity (about 19 mS/cm) is stable in humidified 5% H₂/Ar during ageing at 175 °C for over 100 h. This material is a potential electrolyte for intermediate temperature fuel cells and other electrochemical devices.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

XPS analysis for degraded Y2SiO5:Ce phosphor thin films

X-ray photoelectron spectroscopy (XPS) results were obtained for standard Y₂SiO₅:Ce phosphor powders as well as undegraded and 144 h electron degraded Y₂SiO₅:Ce pulsed laser deposited (PLD) thin films. The two Ce 3d peaks positioned at 877.9 ± 0.3 and 882.0 ± 0.2 eV are correlated with the two different sites occupied by Ce in the Y₂SiO₅ matrix. Ce replaced the Y in the two different sites with coordination numbers of 9 and 7. The two Ce 3d XPS peaks obtained during the thin film analysis were also correlated with the luminescent mechanism of the broad band emission spectra of the Y₂SiO₅:Ce X₁ phase. These two different sites are responsible for the two main sets of cathodoluminescent (CL) and photoluminescence (PL) peaks situated at wavelengths of 418 and 496 nm. A 144 h electron degradation study on the Y₂SiO₅:Ce thin film yielded an increase in the CL intensity with a second broad emission peak emerging between 600 and 700 nm. XPS analysis showed the presence of SiO₂ on the surface that formed during prolonged electron bombardment. The electron stimulated surface chemical reaction (ESSCR) model is used to explain the formation of this luminescent SiO₂ layer.     

Synthesis and characterization of pure and ZrO2-doped nanocrystalline CuO-NiO system

The physicochemical, surface and catalytic properties of pure and doped 0.25CuO-NiO solids prepared by sol-gel method were investigated. The dopant concentration was 2, 4 and 6 mol% ZrO₂. The solids investigated were calcined at 400 and 600 °C. The techniques employed were XRD, EDX, TEM, surface excess oxygen, nitrogen adsorption at −196 °C and catalytic oxidation of CO by O₂ using both static and flow methods. The results revealed that the investigated system dissolved 4 mol% ZrO₂ by heating at 400 °C. This process was accompanied by a significant increase in the S_BET and V_p with subsequent decrease in the (r) values of the doped adsorbent. ZrO₂-doping of the system investigated followed by calcination at 400 and 600 °C led to a considerable increase in its catalytic activity in CO oxidation by O₂ using static and flow methods. The doping process was not accompanied by any change in the activation energy of the catalyzed reaction.