聚噻吩/多壁碳纳米管复合材料结构与导电机理的研究

从结构和相互作用方面对聚噻吩(PTh)/多壁碳纳米管(MWNTs)复合材料进行了研究, 结果表明: 一方面聚噻吩本身的结构对其导电性能有一定的影响, 另一方面MWNTs作为一种掺杂剂, 和聚噻吩之间存在强的相互作用, 电子从MWNTs转移到聚噻吩. MWNTs和它周围被掺杂的聚噻吩通过π-π共轭作用形成相对独立的导电单元, 在复合材料的导电体系中起到主要作用, 随着这种导电单元数量的增加直至相互接触, 形成大的导电体系, 复合材料的电导率达到最大值.     

聚丁基噻吩的合成及性能

用化学聚合方法合成了聚丁基噻吩导电材料,并研究了不同的聚合条件对聚合物性能的影响。聚丁基噻吩导电材料具有较好的稳定性和加工性,其掺杂态的导电率可达到10s/cm。     

某些导电高分子的波谱性能

本文以聚吡咯和聚噻吩为例，对导电高分子的紫外－可见光谱、红外光谱、远红外及微波区的波谱性能进行了综述，并分析了波谱性能与结构的关系。对导电高分子波谱性能的实际应用前景也进行了论述。     

聚噻吩与取代聚噻吩的能带结构的计算

聚噻吩与取代聚噻吩的能带结构的计算曹阳，陈良进（苏州大学化学系苏州２１５００６）关键词取代，聚噻吩，能带结构，导电性在五元杂环的高聚物中，３－取代聚噻吩已引起了人们广泛的兴趣，已有人对其能带结构和导电性能［１－２］尤其是其温度与导电性能的关系［３－５...     

聚噻吩/多壁碳纳米管复合材料的导电性能

通过共混多壁碳纳米管(MWNTs)和聚噻吩(PTh), 制备了PTh/MWNTs复合材料, 复合材料表现出良好的导电性能(电导率达16.1 S/m). 通过Raman, TG, XPS, UV-Vis等对复合材料进行了分析, 结果表明, MWNTs和 PTh之间存在强的相互作用, MWNTs上的离域电子与噻吩共轭主链上的π电子之间形成π-π共轭, 电子从MWNTs转移到聚噻吩, 增加了噻吩主链的有效共轭长度, 提高了复合材料的导电性能. FESEM分析表明, MWNTs和它周围被掺杂的聚噻吩通过π-π共轭作用结合在一起, 形成相对独立的导电单元, 在复合材料的导电体系中起到主要作用.     

β-双取代和β，β＇-取代可溶性导电聚噻吩的合成与表征

自上世纪90年代，Burroughes等人首次报道导电聚合物材料PPV（poly-p-phenylene vinylene）的发光性能后，聚合物发光研究获得了迅猛的发展。聚噻吩类聚合物因具有良好的稳定性和较高的发光活性而受到了人们广泛的关注。由于取代基的不同，聚噻吩类衍生物的发光颜色和发光强度均不相同，因此合成新型材料始终是这一领域的热点和基础工作。Yoshino等人以无水FeCl3为催化剂合成可溶性取代聚噻吩的方法，因条件温和，反应易控制，产率较高而被学术界广泛采用。我们参考并改进该方法成功地合成了β-取代聚噻吩的基础上，进一步合成了β，β’-双取代聚噻吩，以期在改变聚合物链性能的同时，调控并改善聚合物光、电性能。本文介绍了其中四种材料的合成方法、表征结果及光学性能的初步研究结果。     

聚3-辛基噻吩/MWNTs复合材料的导电性能研究

采用在氯仿溶液中超声共混, 制备聚3-辛基噻吩(P3OT)和多壁碳纳米管(MWNTs)复合材料. 当MWNTs掺杂量为3%时复合材料的电导率为1.43 S•m－1, 达到纯MWNTs的电导率水平. 用FTIR光谱, TG, UV-Vis光谱, XPS和FESEM进行研究分析, 认为MWNTs的离域电子与P3OT主链上的π电子之间形成π-π共轭, 增加了P3OT主链的有效共轭度, 被掺杂的P3OT具有很高的电导率, 提高了复合材料的导电性能. MWNTs与被掺杂的P3OT组成相对独立的导体单元, 对复合材料的导电网络形成起着主要作用.     

聚噻吩的合成方法

自从1977年白川英树等发现聚乙炔这种导电聚合物以来,打破了高分子材料长期以来被认为是绝缘体的观点。随后聚苯胺、聚吡咯、聚噻吩等的出现使导电聚合物的种类不断出新,其用途也扩展到如导电材料、电极材料、催化材料以及太阳能电池等应用中,且已有部分产品实现了商品化。其中,聚噻吩因其良好的稳定性、易于制备、掺杂后具有良好的光电化学性能等特点而受到广泛关注。本文总结了几种合成聚噻吩及其衍生物的常见方法,包括化学氧化聚合法、电化学聚合法、金属催化偶联法、光致合成法、光电化学沉积法,以及近年来新发现的固相聚合法和酸催化聚合法,并简要介绍了各自的合成机理及优缺点。     

导电高聚物的EXAFS研究(Ⅱ)FeCl_3掺杂的聚噻吩

聚噻吩是一种共轭有机高聚物,其结构如图1所示。类似于聚乙炔,经电子受体掺杂后的聚噻吩,呈现出较高的电导率。为了阐明导电高聚物的电导机制,必须搞清掺杂后掺杂剂的化学结构和高分子链与掺杂剂之间的相互作用。前文我们报道了用扩展X射线吸收精细结构(EXAFS)谱对H_2PtCl_6·6H_2O掺杂聚乙炔的研究,本文报道对FeCl_3掺杂聚噻吩的研究结果。     

Fe(ClO_4)_3氧化合成聚乙撑二氧-三噻吩

分别以Fe(Cl O4)3、FeCl3、Fe2(SO4)3作为氧化剂,对3′,4′-乙撑二氧-2,2′∶5′,2″-三噻吩(TET)进行了化学氧化聚合,并研究了聚合条件对聚合物结构和电化学性能的影响。利用红外光谱、紫外光谱、X射线衍射对聚合物进行了表征,采用循环伏安、恒电流充放电等电化学方法研究了聚合物的电化学性能。结果表明:当TET与Fe(Cl O4)3的摩尔比为1∶4,反应温度为18℃,反应时间为12 h时,聚3′,4′-乙撑二氧-2,2′∶5′,2″-三噻吩(PTET)具有更好的共轭结构和电化学性能,导电率可达1.47 S/m,比电容可达133 F/g。     

Characterization of Conducting Copolymer of Thiophene via Pyrolysis Mass Spectrometry

In this work, structural and thermal characterization of a conducting copolymer of thiophene (PTh) with 2‐methylbutyl‐2‐(3‐thienyl)acetate prepared by two different methods has been performed by pyrolysis mass spectrometry techniques. The pyrolysis mass spectrometry data of both components of the copolymer, polythiophene, PTh, poly(2‐methylbutyl‐2‐(3‐thienyl)acetate), PMBTA and PTh/PMBTA have been analyzed and compared. It has been determined that when the electrochemical polymerization of thiophene was achieved on PMBTA coated anode through the thiophene moieties of PMBTA, characteristics of both PTh and PMBTA were retained to a certin extent. However, when thiophene was polymerized in the presence of MBTA, a polymer film with lower conductivity, but more uniform structure, was produced.     

Chemical vapor deposition synthesis of tunable unsubstituted polythiophene

Despite having exceptional electroactive properties, applications of unsubstituted polythiophene (PTh) have been limited due to its insolubility. To overcome this challenge, we have employed oxidative chemical vapor deposition (oCVD) as a unique liquid-free technique to enable the oxidative polymerization of PTh using thiophene as the starting monomer and vanadium oxytrichloride as an effective vaporizable oxidant initiator. Vibrational and phototelectron spectroscopy indicated the formation of unsubstituted polythiophene. Cyclic voltammetry revealed its electrochromic behavior in solution. Significantly, polymer conjugation length and electrical conductivity can be tuned by controlling oCVD process variables. Polymerization is found to be adsorption-limited, so by providing sufficient monomer and limiting the amount of initiator at the growth surface, PTh is believed to be formed through α-α thiophene linkages.     

锂在共轭双键高分子中的电化学嵌入反应III. 锂嵌入聚噻吩的量子化学计算†

采用Gaussian软件和HF方法, 通过从头计算(ab initio)法选取4-31G基组计算锂离子嵌入聚噻吩过程中结构与结合能的变化关系. 发现噻吩聚合时主要生成三或四聚合物. 聚合物在Li原子(或Li^＋离子)嵌入后, 聚噻吩间距离明显变小, 同时发生电荷转移, 形成稳定嵌合物; 并使噻吩环的C-α—C-β键级变小. 同时, 研究了锂离子(或原子)嵌入后体系的HOMO, LUMO能级. 聚噻吩在嵌入锂离子时LUMO轨道能级变为负值, 成为电池反应得电子的正极. 而金属Li₂ 释放Li^＋后的Li^－的HOMO能级为＋0.7427 eV, 则成为给电子的负极. 由此, 可以完成由锂/聚噻吩在高氯酸锂电解质中组成的放电过程, 并提出嵌合键级概念用来表征锂在聚噻吩间的结合程度.     

Photoluminescent behavior of poly(3‐hexylthiophene) derivatives with a high azobenzene content in the side chains

A series of polythiophene derivatives with substantially higher azobenzene contents in the side chains were prepared via copolymerization of 3‐hexylthiophene with four different types of 4‐((4‐(phenyl)azo)phenoxy)alkyl‐3‐thienylacetate. The alkyl spacers with different lengths, i.e. butyl, hexyl, octyl and undecyl groups were used between the azobenzene group and the thiophene ring. The compositions, structures and thermal properties of these polythiophene derivatives were characterized. The structural dependence of photoluminescent emission, photochromic behavior of these copolymers were systematically studied and compared with poly(3‐hexylthiophene). The results show that the azobenzene substitution renders the polythiophene some interesting optical properties that can be modulated by UV light irradiation. In the azobenzene modified polythiophene, the intensity of photoluminescent emission associated with the conjugated polythiophene main chain was found to decrease significantly upon UV irradiation. The finding suggests that the photo‐induced trans‐cis isomerization of the azobenzene pendant groups has a significant effect on photoluminescent emission, particularly when short spacers are used between azobenzene groups and the main chain. However, the effect becomes less prominent when longer spacers are used between the azobenzene group and the main chain. Furthermore, UV irradiation of the copolymers also resulted in an increase in intensity and broadening of bandwidth for the absorption peak associated with the polythiophene backbones. Again the magnitude of intensity changes upon UV irradiation were found to be dependent on the spacer length between the azobenzene group and polythiophene main chain. Copyright © 2005 John Wiley & Sons, Ltd.     

Spatially resolved Raman spectroelectrochemistry of solid-state polythiophene/viologen memory devices

A three terminal molecular memory device was monitored with in situ Raman spectroscopy during bias-induced switching between two metastable states having different conductivity. The device structure is similar to that of a polythiophene field effect transistor, but ethylviologen perchlorate was added to provide a redox counter-reaction to accompany polythiophene redox reactions. The conductivity of the polythiophene layer was reversibly switched between high and low conductance states with a "write/erase" (W/E) bias, while a separate readout circuit monitored the polymer conductance. Raman spectroscopy revealed reversible polythiophene oxidation to its polaron form accompanied by a one-electron viologen reduction. "Write", "read", and "erase" operations were repeatable, with only minor degradation of response after 200 W/E cycles. The devices exhibited switching immediately after fabrication and did not require an "electroforming" step required in many types of memory devices. Spatially resolved Raman spectroscopy revealed polaron formation throughout the polymer layer, even away from the electrodes in the channel and drain regions, indicating that thiophene oxidation "propagates" by growth of the conducting polaron form away from the source electrode. The results definitively demonstrate concurrent redox reactions of both polythiophene and viologen in solid-state devices and correlate such reactions with device conductivity. The mechanism deduced from spectroscopic and electronic monitoring should guide significant improvements in memory performance.     

Polythiophene-coated nano-silicon composite anodes with enhanced performance for lithium-ion batteries

Herein, a new polythiophene-coated silicon composite anode material was prepared by in situ chemical oxidation polymerization method. The structure of this material was characterized by infrared spectroscopy, which proved that the oxidative polymerization of thiophene occurred mainly in α position. The polythiophene can provide the better electric contact between silicon particles. Therefore, the as-prepared Si/polythiophene composite electrodes achieve better cycling performance than the bare Si anode. The specific capacity of the composite electrode retains 478 mA h g^?1 after 50 cycles.     

Effect of synthetic route on structural and morphological properties of poly(thiophene-co-indole)

In this study, homopolymers of polythiophene (PT), polyindole (PIN) and their composites and copolymers were synthesized by chemical polymerization and were characterized by FTIR and UV-spectroscopy, and conductivity measurements. The conductivities of polymers, composites and copolymers were measured by a conventional four probe method at room temperature and different temperatures. Among the products, PT-PIN copolymer which was synthesized at polythiophene conditions revealed the highest conductivity with a value of 0.28 S cm^?1. The thermal properties of the samples were investigated by using thermogravimetric analyses, and it was found that they have quite good thermal stability. X-ray diffraction spectra showed that the amorphous nature of the polymers. Morphological properties of the polymers, composites and copolymers have been investigated by scanning electron microscopy.     

A facile route of polythiophene nanoparticles via Fe3+‐catalyzed oxidative polymerization in aqueous medium

We have demonstrated that unsubstituted thiophene can be polymerized by Fe³⁺‐catalyzed oxidative polymerization inside nanosized thiophene monomer droplets, that is, nanoreactors, dispersed in aqueous medium, which can be performed under acidic solution conditions with anionic surfactant. Besides, we proposed a synthetic mechanism for the formation of the unsubstituted polythiophene nanoparticles in aqueous medium. This facile method includes a FeCl₃/H₂O₂ (catalyst/oxidant) combination system, which guarantees a high conversion (ca. 99%) of thiophene monomers with only a trace of FeCl₃. The average particle size was about 30 nm, within a narrow particle‐size distribution (PDI = 1.15), which resulted in a good dispersion state of the unsubstituted polythiophene nanoparticles. Hansen solubility parameters were introduced to interpret the dispersion state of the polythiophene nanoparticles with various organic solvents. The UV–Visible absorption and photoluminescence (PL) spectrum were measured to investigate the light emitting properties of the prepared unsubstituted polythiophene nanoparticle emulsions. According to non‐normalized PL analysis, the reduced total PL intensity of the polythiophene nanoparticle emulsions can be rationalized by self‐absorption in a wavelength range less than 500 nm. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 2097–2107, 2008     

Preparation of rod-shaped polythiophene-coated polystyrene nanocomposite particles

Core-shell nanocomposite particles with polystyrene sphere core and polythiophene overlayer shell were synthesized through chemical oxidative polymerization of thiophene templated using uniquely structured polystyrene latex. The morphology of polythiophene shell, which has nanorod shaped or featureless surface morphology, can be simply controlled by varying the dosage and feeding protocol of oxidizers.     

An n-Type Polythiophene Derivative with Excellent Thermoelectric Performance

Typical n-type conjugated polymers are based on fused-ring electron-accepting building blocks. Herein, we report a non-fused-ring strategy to design n-type conjugated polymers, i.e. introducing electron-withdrawing imide or cyano groups to each thiophene unit of a non-fused-ring polythiophene backbone. The resulting polymer, n-PT1 , shows low LUMO/HOMO energy levels of −3.91 eV/−6.22 eV, high electron mobility of 0.39 cm² V⁻¹ s⁻¹ and high crystallinity in thin film. After n-doping, n-PT1 exhibits excellent thermoelectric performance with an electrical conductivity of 61.2 S cm⁻¹ and a power factor (PF) of 141.7 μW m⁻¹ K⁻². This PF is the highest value reported so far for n-type conjugated polymers and this is the first time for polythiophene derivatives to be used in n-type organic thermoelectrics. The excellent thermoelectric performance of n-PT1 is due to its superior tolerance to doping. This work indicates that polythiophene derivatives without fused rings are low-cost and high-performance n-type conjugated polymers.